1998. 6. 15 1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA92/93
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
·Complementary to MMBTA42/43.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
*Pulse Test : Pulse Width≦300μS, Duty Cycle≦2.0%
* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
MMBTA92 VCBO
-300
V
MMBTA93 -200
Collector-Emitter
Voltage
MMBTA92 VCEO
-300
V
MMBTA93 -200
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-500 mA
Emitter Current IE500 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Tstg -55～150 ℃
Type Name
Marking
MMBTA92
MMBTA93
Lot No.
YV
Type Name
Lot No.
YW
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base
Breakdown Voltage
MMBTA92 V(BR)CBO IC=-100μA, IE=0
-300 - -
V
MMBTA93 -200 - -
Collector-Emitter
Breakdown Voltage
MMBTA92 V(BE)CEO IC=-1.0mA, IB=0 -300 - -
V
MMBTA93 -200 - -
DC Current Gain * hFE
IC=-1.0mA, VCE=-10V 25 - -
IC=-10mA, VCE=-10V 40 - -
IC=-30mA, VCE=-10V 25 - -
Collector-Emitter Saturation Voltage * VCE(sat) IC=-20mA, IB=-2.0mA - - -0.5 V
Base-Emitter Saturation Voltage * VBE(sat) IC=-20mA, IB=-2.0mA - - -0.9 V
Transition Frequency fTVCE=-20V, IC=-10mA, f=100MHz 50 - - MHz
Collector Output
Capacitance
MMBTA92
Cob VCB=-20V, IE=0, f=1MHz
- - 6.0
pF
MMBTA93 - - 8.0
1998. 6. 15 2/2
MMBTA92/93
Revision No : 1
TRANSITION FREQUENCY f (MHz)
0
T
-30-10-3-1
COLLECTOR CURRENT I (mA)
C
f - I
C - V
R
REVERSE VOLTAGE V (V)
-0.1 -0.3 -1 -3
ob
1
COLLECTOR OUTPUT CAPACITANCESATURATION VOLTAGE
0
BE(sat),
-30-10-3-1
COLLECTOR CURRENT I (mA)
C
V V - I h - I
C
COLLECTOR CURRENT I (mA)
-1 -3 -10 -30
300
FE
DC CURRENT GAIN h
10
ob R
C (pF)
-10 -30 -100 -300 -1k
3
5
10
30
50
100
Cib
ob
C
TC
-100-5 -50
30
50
100
T =25 C
V =20V
j
CE
BE(sat) , C
V V (V)
-100-5 -50
-0.2
-0.4
-0.6
-0.8
-1.0
V
I /I =10
V
BE(sat)
CB
CE(sat)
CE(sat) FE C
-100-5 -50
100
30
50
T =125 C
j
j
T =25 C
j
T =-55 C
CE
V =10V
CE(sat)
