C
B
E
SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – DECEMBER 1997
FEATURES
Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A
COMPLEMENTARY TYPE – FMMTL617
PARTMARKING DETAIL – L77
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -12 V
Collector-Emitter Voltage VCEO -12 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC-1.25 A
Peak Pulse Current ICM -4 A
Base Current IB-200 mA
Power Dissipation at Tamb
=25°C Ptot -500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
FMMTL717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO -12 -35 V IC=-100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO -12 -25 V IC=-10mA*
Emitter-Base
Breakdown Voltage V(BR)EBO -5 -8.5 V IE=-100µA
Collector Cut-Off Current ICBO -10 nA VCB=-10V
Emitter Cut-Off Current IEBO -10 nA VEB=-4V
Collector Cut-Off Current ICES -10 nA VCE=-10V
Collector-Emitter
Saturation Voltage VCE(sat) -24
-94
-160
-200
-40
-140
-240
-290
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-20mA*
IC=-1A, IB=-50mA*
IC=-1.25A,IB=-50mA
Base-Emitter
Saturation Voltage VBE(sat) -970 -1100 mV IC=-1.25A, IB=-50mA*
Base-Emitter
Turn On Voltage VBE(on) -875 -1000 mV IC=-1.25A, VCE=-2V*
Static Forward
Current Transfer Ratio hFE 300
300
180
100
50
490
450
275
180
110
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
Transition Frequency fT205 MHz IC=-50mA, VCE=-10V
f=100MHz
Collector-Base
Breakdown Voltage Cobo 15 20 pF VCB=-10V, f=1MHz
Switching times ton
toff
76
149 ns
ns IC=-1A, VCC=-10V
IB1=IB2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMTL717
FMMTL717
1m 10
1m 100m 10
1m 100m 10 0.1
10100m1m
1m 100m 10
IC- Collector Current (A)
VCE(sat) v IC
0
0.5
VCE(sat) - (V)
IC/IB=10
IC/IB=20
IC/IB=50
+25°C
-55°C
hFE - Typical Gain
+100°C
0
IC- Collector Current (A)
hFE v IC
+25°C
+100°C
VBE(on) - (V)
-55°C
0
IC- Collector Current (A)
VBE(on) v IC
+100°C
+150°C
VCE(sat) - (V)
+25°C
0
IC- Collector Current (A)
VCE(sat) v IC
+100°C
+150°C
VBE(sat) - (V)
+25°C
0
IC- Collector Current (A)
VBE(sat) v IC
1s
100ms
IC - Collector Current (A)
DC
10m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100µs
+150°C
VCE=2V
+25°C
-55°C
IC/IB=10
VCE=2V
-55°C
IC/IB=10
10m 100m 1
0.1
0.2
0.3
0.4
0.1
0.2
0.3
0.4
0.5
10m 1
10m 1
400
800
10m 1
0.4
0.8
1.2
10m 1
0.4
0.8
1.2
1.6
110100
100m
1
10
TYPICAL CHARACTERISTICS
