SCHOTTKY RECTIFIER 1 Amp
MBRS190TR
MBRS1100TR
Bulletin PD-20592 rev. C 05/02
1
www.irf.com
IF(AV) Rectangular waveform 1.0 A
VRRM 90 - 100 V
IFSM @ tp = 5 µs sine 870 A
VF@
1.0 Apk, TJ=125°C 0.63 V
TJrange - 55 to 175 °C
Characteristics Units The MBRS190TR, MBRS1100TR surface-mount Schottky
rectifier has been designed for applications requiring low
forward drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, free-wheeling diodes, battery charging, and
reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/Features
SMB
3.80 (.150)
3.30 (.130)
4.70 (.185)
4.10 (.161)
2.15 (.085)
1.80 (.071)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
4.0 (.157)
2.0 TYP.
(.079 TYP.)
2.5 TYP.
(.098 TYP.) SOLDERING PAD
CATHODE ANODE
1 2
12
POLARITY PART NUMBER
4.2 (.165)
MBR190TR
MBR1100TR
Device Marking: IR19/ IR10
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Major Ratings and Characteristics
MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. C 05/02
2www.irf.com
Voltage Ratings
VFM Max. Forward Voltage Drop (1) 0.78 V @ 1A TJ = 25 °C
* See Fig. 1 0.62 V @ 1A TJ = 125 °C
IRM Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 1.0 mA TJ = 125 °C
CTTypical Junction Capacitance 42 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated VR)
VR = rated VR
Electrical Specifications
Parameters Value Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
IF(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 147 °C, rectangular wave form
IFSM Max. Peak One Cycle Non-Repetitive 870 A 5µs Sine or 3µs Rect. pulse
Surge Current 50 10ms Sine or 6ms Rect. pulse
EAS Non- Repetitive Avalanche Energy 5.0 mJ TJ = 25 °C, IAS = 0.5A, L = 10mH
IAR Repetitive Avalanche Current 0.2 A
Parameters Value Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRM applied
VRMax. DC Reverse Voltage (V) 90 100
VRWM Max. Working Peak Reverse Voltage (V)
Part number MBRS190TR MBRS1100TR
TJMax. Junction Temperature Range (*) - 55 to 175 °C
Tstg Max. Storage Temperature Range - 55 to 175 °C
RthJL Max. Thermal Resistance 36 °C/W DC operation (See Fig. 4)
Junction to Lead (**)
RthJA Max. Thermal Resistance 80 °C/W DC operation
Junction to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar to DO-214AA
Device Marking IR19-IR10
Thermal-Mechanical Specifications
Parameters Value Units Conditions
(**) Mounted 1 inch square PCB
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. C 05/02
3
www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Instantaneous Forward Current - I F (A)
Forward Voltage Drop - VFM (V)
Reverse Current - I R (m A)
Reverse Voltage - VR (V)
Reverse Voltage - VR (V)
Junction Capacitance - C T (p F)
0.1
1
10
0.2 0.4 0.6 0.8 1
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
.00001
0.0001
0.001
0.01
0.1
1
10
0 20406080100
75˚C
25˚C
Tj = 175˚C
150˚C
125˚C
100˚C
50˚C
10
100
0 20406080100
T = 25˚C
J
Thermal Impedance Z thJC (°C/W)
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg)
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single Pulse
(Thermal Resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2 .
2. Peak Tj = Pdm x ZthJC + Tc .
MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. C 05/02
4www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1
= 80% rated VR
Average Forward Current - I F(AV) (A)
Allowable Lead Temperature (°C)
Average Forward Current - I F(AV) (A)
Average Power Loss (Watts)
Square Wave Pulse Duration - Tp (Microsec)
Non-Repetitive Surge Current - I FSM
(A)
0
0.2
0.4
0.6
0.8
1
0 0.3 0.6 0.9 1.2 1.5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
110
120
130
140
150
160
170
180
0 0.4 0.8 1.2 1.6
DC
Square wave (D = 0.50)
Rated Vr applied
see note (2)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
10 100 1000 10000
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. C 05/02
5
www.irf.com
IR LOGO
YEAR
CURRENT
IR10
VOLTAGE
YYWWX
WEEK
SITE ID
Tape & Reel Information
Dimensions in millimetres and (inches)
Marking & Identification Ordering Information
MBRS1100TR - TAPE AND REEL
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 3000
PIECES).
EXAMPLE: MBRS1100TR - 6000 PIECES
Each device has 2 rows for identification. The first row
designates the device as manufactured by International
Rectifier as indicated by the letters "IR", and the Part
Number (indicates the current and the voltage rating).
The second row indicates the year, the week of
manufacturing and the Site ID.
MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. C 05/02
6www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
