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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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VCOS - SMT
12
12 - 146
General Description
Features
Functional Diagram
The HMC532LP4 & HMC532LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer ampli ers.
Covering 7.1 to 7.9 GHz, the VCO’s phase noise
performance is excellent over temperature, shock
and vibration due to the oscillator’s monolithic struc-
ture. Power output is +14 dBm typical from a single
supply of +3V @ 85 mA. The voltage controlled
oscillator is packaged in a leadless QFN 4 x 4 mm
surface mount package.
Pout: +14 dBm
Phase Noise: -103 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: +3V @ 85 mA
24 Lead 4x4mm QFN Package: 9 mm
Typical Applications
Low noise MMIC VCO w/Buffer Ampli er for:
• VSAT Radio
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• Military End-Use
Electrical Speci cations, TA = +25° C, Vcc = +3V
Parameter Min. Typ. Max. Units
Frequency Range 7.1 - 7.9 GHz
Power Output 12 14 17 dBm
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output -101 dBc/Hz
Tune Voltage (Vtune) 1 13 V
Supply Current (Icc) (Vcc = +3V) 60 85 100 mA
Tune Port Leakage Current 10 µA
Output Return Loss 15 dB
Harmonics
2nd
3rd
-14
-25
dBc
dBc
Pulling (into a 2.0:1 VSWR) 28 MHz pp
Pushing @ Vtune= +5V 78 MHz/V
Frequency Drift Rate 0.85 MHz/°C
MMIC VCO w/ BUFFER
AMPLIFIER, 7.1 - 7.9 GHz
v01.0508
HMC532LP4 / 532LP4E