ee Discrete POWER & Signal FAIRCHILD Technologies ee SEMICONDUCTOR m SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absol ute Maxi mum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VeceEo Collector-Emitter Voltage 45 Vv Veso Collector-Base Voltage 45 Vv Veo Emitter-Base Voltage 5.0 Vv lo Collector Current - Continuous 15 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted impaired. Symbol Characteristic Max Units BCP54 Pp Total Device Dissipation 1.5 W Derate above 25C 12 mWwW/eC Rega Thermal Resistance, Junction to Ambient 83.3 C/W 41997 Fairchild Semiconductor Corporation vSd0d Electrical Characteristics NPN General Purpose Amplifier (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vipryceo Collector-Emitter Breakdown Voltage lo = 10 mA, Ip =O 45 Vv Visricso Collector-Base Breakdown Voltage Ilo = 100 pA, Ie = 0 45 Vv VieR)EBO Emitter-Base Breakdown Voltage le=10pA, Io =0 5.0 Vv leso Collector-Cutoff Current Vop = 30 V, IE =0 100 nA Vog = 30 V, le = 0, Ta = 125C 10 uA leBo Emitter-Cutoff Current Vep=5.0V, Ilo =0 10 uA ON CHARACTERISTICS Hee DC Current Gain Ilo = 5.0 MA, Veg = 2.0 V 25 Io = 150 mA, Vee = 2.0 V 40 250 lo = 500 mA, Voce =20V 25 VeeEsat) Collector-Emitter Saturation Voltage Ic = 500 mA, Ip = 50 MA 0.5 Vv Veeon) Base-Emitter On Voltage Ic = 500 MA, Vee = 2.0 V 1.0 Vv Typical Characteristics Typical Pulsed Current Gain vs Collector Current ao oS oO Voge = 5V nN oO oO wo oO oO nN oO oO o oO 0 0.001 0.01 0.1 1 | c - COLLECTOR CURRENT (A) h,_. > TYPICAL PULSED CURRENT GAIN Qo 9S PB 2 2 yb Oo BR GD Voesar COLLECTOR-EMITTER VOLTAGE (V) oo oO Collector-Emitter Saturation Voltage vs Collector Current B =10 0.1 1 3 | - COLLECTOR CURRENT (A) vSd0d NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Base-Emitter ON Voltage vs Collector Current + ~ a Voge = 5V io 2 6 S 0.01 0.1 1 |, - COLLECTOR CURRENT (A) Vse;on; BASE-EMITTER ON VOLTAGE (V) oOo Collector-Cutoff Current vs Ambient Temperature o oO Vop= 40V o 9 | gg COLLECTOR CURRENT (nA) 25 50 75 100 125 150 Ta - AMBIENT TEMPERATURE (C) Gain Bandwidth Product vs Collector Current ao oO oO ce = 10V nN Qo oO wo oO oO nN oO oO o oO o 1 10 100 1000 Ic - COLLECTOR CURRENT (mA) h,_-- GAIN BANDWIDTH PRODUCT (MHz) Base-Emitter ON Voltage vs Collector Current + ~ a Voe= BV So 2 3S S 0.01 0.1 1 |, -COLLECTOR CURRENT (A) Veejony BASE-EMITTER ON VOLTAGE (V) oOo Collector-Base Capacitance vs Collector-Base Voltage b o a 3 Ny 3 4 8 12 16 20 24 28 V op- COLLECTOR-BASE VOLTAGE (V) Coso - COLLECTOR-BASE CAPACITANCE (pF) Power Dissipation vs Ambient Temperature ao 4 iy a =e a 0.25 Pp - POWER DISSIPATION (W) N a 0 25 50 75 100 125 150 TEMPERATURE (C) vSd0d TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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