Ordering number : ENN6788 2SK3092 N-Channel Silicon MOSFET 2SK3092 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [2SK3092] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.3 2.3 SANYO : TP Package Dimensions unit : mm 2092B [2SK3092] 6.5 5.0 4 0.5 0.5 0.85 1 0.6 2.3 2 1.2 7.0 5.5 1.5 2.3 2.5 * Package Dimensions 0.8 * 3 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N3000 TS IM TA-3081 No.6788-1/4 2SK3092 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 Gate-to-Source Voltage VGSS 30 V 3 A Drain Current (DC) ID Drain Current (Pulse) IDP PW10s, duty cycle1% V 12 A 1.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Tc=25C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min typ max V(BR)DSS IDSS ID=1mA, VGS=0 VDS=320V, VGS=0 IGSS VGS(off) VGS=30V, VDS=0 VDS=10V, ID=1mA 3.0 | yfs | VDS=10V, ID=1.5A 0.7 RDS(on) Ciss ID=1.5A, VGS=15V VDS=20V, f=1MHz 360 Output Capacitance Coss VDS=20V, f=1MHz 90 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 45 pF VDS=200V, VGS=10V, ID=3A See specified Test Circuit 10 nC 10 ns Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Total Gate Charge Qg 400 Unit V 1.0 mA 100 nA 4.0 V 2.3 1.4 S 1.8 pF Turn-ON Delay Time td(on) Rise Time tr td(off) See specified Test Circuit 10 ns See specified Test Circuit 28 ns tf See specified Test Circuit 17 Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD IS=3A, VGS=0 ns 0.85 1.2 V Marking : K3092 Switching Time Test Circuit VDD=200V PW=1s D.C.0.5% ID=1.5A RL=133 VGS=15V VOUT D G P.G RGS 50 2SK3092 S ID -- VDS 7 ID -- VGS 6 VDS=10V 10V 15V 8V 4 3 7V 2 0 0 4 25C 75C 3 2 1 VGS=6V 1 Tc= --25 5 C 5 Drain Current, ID -- A Drain Current, ID -- A 6 0 10 20 Drain-to-Source Voltage, VDS -- V 30 IT01967 0 5 10 15 Gate-to-Source Voltage, VGS -- V 20 IT01968 No.6788-2/4 2SK3092 RDS(on) -- VGS 5 RDS(on) -- Tc 5.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- Tc=25C 4 ID=3.0A 3 1.5A 1.0A 2 1 4.5 4.0 3.5 10V S= G V V , =15 .5A =1 V GS ID , A 1.5 I D= 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 5 4 3 2 1 50 100 Forward Transfer Admittance, |yfs| -- S Cutoff Voltage, VGS(off) -- V 6 0 75 125 100 VDS=10V 5 3 2 Tc= 1.0 7 C --25 C 75 C 25 5 3 2 2 3 5 7 2 1.0 3 5 7 10 IT01972 SW Time -- ID 1000 7 5 Switching Time, SW Time -- ns 150 IT01970 Drain Current, ID -- A VGS=0 Tc=7 5C 25C --25C 50 7 IT01971 IF -- VSD Forward Current, IF -- A 25 yfs -- ID 0.1 0.1 150 Case Temperature, Tc -- C 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 10 VDS=10V ID=1mA 0 --50 --25 Case Temperature Tc -- C VGS(off) -- Tc 7 VDD=200V VGS=15V 3 2 100 7 5 td (off ) 3 2 tf td(on) 10 7 5 tr 3 2 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Diode Forward Voltage, VSD -- V 1.6 Gate-to-Source Voltage, VGS -- V Ciss 3 2 Coss 7 Crss 5 3 2 5 7 2 1.0 3 5 7 10 IT01974 VGS -- Qg 10 VDS=200V ID=3A 9 5 100 3 Drain Current, ID -- A f=1MHz 7 2 0.1 IT01973 Ciss, Coss, Crss -- VDS 1000 Ciss, Coss, Crss -- pF 0 --50 20 IT01969 8 7 6 5 4 3 2 1 10 0 0 5 10 15 20 Drain-to-Source Voltage, VSD -- V 25 30 IT01975 0 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC 8 9 10 IT01976 No.6788-3/4 2SK3092 Forward Bias A S O IDP=12A 10 7 5 3 2 <10s 10 0 ID=3A s 1m s ms 10 1.0 7 5 3 2 DC op era tio Operation in this area is limited by RDS(on). 0.1 7 5 3 2 n Tc=25C Single pulse 0.01 1.0 2 3 1.2 1.0 0.8 0.6 0.4 0.2 0 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V 5 7 1000 IT01977 0 20 40 60 80 100 120 140 Amibient Tamperature, Ta -- C 160 IT01979 PD -- Tc 35 Allowable Power Dissipation, PD -- W PD -- Ta 1.4 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 100 7 5 3 2 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT01978 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS No.6788-4/4