IRFR/U120N
HEXFET® Power MOSFET
S
D
G
VDSS = 100V
RDS(on) = 0.21Ω
ID = 9.4A
Description
5/11/98
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.4
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.6 A
IDM Pulsed Drain Current 38
PD @TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 91 mJ
IAR Avalanche Current 5.7 A
EAR Repetitive Avalanche Energy 4.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.1
RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
D - PA K
TO-252AA I-PAK
TO-251AA
lSurface Mount (IRFR120N)
lStraight Lead (IRFU120N)
lAdvanced Process Technology
lFast Switching
lFully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91365B
www.irf.com 1
IRFR/U120N
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 10 0 –– – –– – V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.21 VGS = 10V, ID = 5.6A
VGS(th) Gate Threshold Voltage 2. 0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 2.7 ––– ––– S VDS = 25V, ID = 5.7A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
QgTotal Gate Charge –– – – – – 2 5 ID = 5.7A
Qgs Gate-to-Source Charge ––– ––– 4.8 nC V DS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 4. 5 ––– VDD = 50V
trRise Time ––– 23 ––– ns ID = 5.7A
td(off) Turn-Off Delay Time ––– 32 ––– RG = 22Ω
tfFall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 330 ––– VGS = 0V
Coss Output Capacitance ––– 92 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LSInternal Source Inductance ––– 7.5 –––
RDS(on) Static Drain-to-Source On-Resistance
LDInternal Drain Inductance ––– 4.5 –––
IDSS Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.5A, VGS = 0V
trr Reverse Recovery Time ––– 99 150 ns TJ = 25°C, I F = 5.7A
Qrr Reverse RecoveryCharge ––– 390 580 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
9.4
38
Notes:
VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, I AS = 5.7A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤V(BR)DSS,
TJ ≤ 175°C Uses IRF520N data and test conditions
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Pulse width ≤ 300µs; duty cycle ≤ 2%
IRFR/U120N
www.irf.com 3
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
d and
1
10
100
0.1 1 10 100
I , D rain-to-Source Current (A)
D
V , Dra in -to -So u rc e V o lta
g
e
(
V
)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BO TTOM 4.5V
20
µ
s PULSE W IDTH
T = 2 5° C
C
A
4.5V
1
10
100
0.1 1 10 100
4.5V
I , D rain-to-Source Current (A )
D
V , Dra in- to -S o u r ce Vo lta
g
e
(
V
)
DS
VGS
TOP 15V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
BOTTOM 4.5V
20
µ
s P ULSE WIDTH
T = 17 5°C
C
A
1
10
100
45678910
T = 25°C
J
GS
V , Ga te -to -S o u rc e V olta
g
e (V)
D
I , Drain-to -S ource C urrent (A)
V = 50V
20µs PU LSE WID TH
DS
T = 175°C
J
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Tem perature (°C )
R , D ra in-to -S o u rc e O n R e s is ta nc e
DS(on)
(Normalized)
V = 1 0 V
GS
A
I = 9 .5A
D
IRFR/U120N
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
100
200
300
400
500
600
1 10 100
C , Capacitance (pF)
DS
V , Dra in- to -S o u rc e Volt a
g
e
(
V
)
A
V = 0 V , f = 1MH z
C = C + C , C S H OR T E D
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25
Q , T ota l Gate Ch a r
g
e
(
nC
)
G
V , Gate - to-Sou r ce V o ltag e (V )
GS
V = 8 0 V
V = 5 0 V
V = 2 0 V
DS
DS
DS
A
FOR TEST CIRCUIT
SE E F IG U R E 1 3
I = 5 . 7 A
D
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 2 5 °C
J
V = 0 V
GS
V , S ourc e-to-Drain Voltage (V )
I , R e ve rs e D r ain C u rre n t (A )
SD
SD
A
T = 17 5°C
J
0.1
1
10
100
1 10 100 1000
V , Dra in- to -S o u r ce Vo lta
g
e
(
V
)
DS
I , Drain Current (A )
OPE RA TION I N T HIS AREA L I MI T ED
B Y R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 2 5 °C
T = 1 7 5° C
Sin
g
le Pul s e
C
J
IRFR/U120N
www.irf.com 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
5.0V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRFR/U120N
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
5.0 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
RG
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
A
15V
10V
0
40
80
120
160
200
25 50 75 100 125 150 175
J
E , S in gle Pu lse Avalanc he E n ergy (m J )
AS
A
Startin
g
T , J unc tion Temperature
(
°C
)
V = 25 V
I
T O P 2 .3 A
4 .0 A
B OTTO M 5.7A
DD
D
IRFR/U120N
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFR/U120N
8www.irf.com
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
TO-252AA (D-PARK)
Par t Marking Infor mation
6.7 3 (.265 )
6.3 5 (.250 )
- A -
4
1 2 3
6.22 (.2 45)
5.97 (.2 35)
- B -
3X 0.89 (.0 35)
0.64 (.0 25)
0 .25 (.0 1 0) M A M B
4 .57 (.180)
2.28 (.090)
2X 1.14 (.0 45)
0.76 (.0 30)
1 .52 (.06 0)
1 .15 (.04 5)
1.0 2 (.04 0)
1.6 4 (.02 5)
5.46 (.215)
5.21 (.205) 1 .27 (.050)
0 .88 (.035)
2.38 (.094)
2.19 (.086) 1.14 (.0 45)
0.89 (.0 35)
0.5 8 (.02 3)
0.4 6 (.01 8)
6.45 (.2 45 )
5.68 (.2 24 )
0.51 (.0 20 )
MIN.
0 .58 (.023)
0 .46 (.018)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
10.42 (.410)
9.40 (.370)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO J EDEC OUTL INE T O- 2 52 AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX . + 0.1 6 ( .0 0 6 ) .
INTERNATIONAL
R ECT IFIER
L OGO
ASSEMB LY
LOT C OD E
E X AMP LE : T HIS IS AN IRF R12 0
W IT H A SSEMBL Y
LOT CODE 9U 1 P FIR ST PO RTION
OF PA RT NUMBER
SECOND PORTION
OF PAR T NUMBER
120
IRFR
9 U 1 P
A
IRFR/U120N
www.irf.com 9
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
TO-251AA (I-PARK)
Par t Marking Information
6.7 3 (.265 )
6.3 5 (.250 )
- A -
6 .22 (.24 5)
5 .97 (.23 5)
- B -
3X 0.8 9 (.035 )
0.6 4 (.025 )
0.2 5 (.0 10 ) M A M B
2 .28 (.09 0)
1 .14 (.045)
0 .76 (.030)
5.46 (.215)
5.21 (.205) 1.2 7 (.050 )
0.8 8 (.035 )
2.38 (.0 94 )
2.19 (.0 86 )
1.14 (.0 45 )
0.89 (.0 35 )
0.58 (.023)
0.46 (.018) LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
NOTES:
1 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIM ENSION : INCH.
3 CONFORMS T O JEDE C OUTL INE T O- 2 5 2 AA.
4 DIM ENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLD ER D IP MAX . + 0 .16 ( .0 06 ).
9.65 (.380)
8.89 (.350)
2X
3X
2.2 8 (.09 0)
1.9 1 (.07 5)
1 .52 (.06 0)
1 .15 (.04 5)
4
1 2 3
6 .45 (.245)
5 .68 (.224)
0.58 (.0 23 )
0.46 (.0 18 )
INTERNATIONAL
R ECT IFIE R
LOG O
A SS EMB L Y
LO T CODE
FIRST PORTION
OF PART NUM BE
R
SECOND PO RTION
OF PART NUMBER
120
9U 1 P
E X A MPL E : T H IS IS A N IRFU1 2 0
WIT H A SSE MB L Y
L O T COD E 9 U1 P
IRFU
IRFR/U120N
10 www.irf.com
Tape & Reel Infor mation
TO-252AA
TR
16 .3 ( .6 4 1 )
15 .7 ( .6 1 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
1 2.1 ( .47 6 )
1 1.9 ( .46 9 ) FEED DIRE CTION FEED DIRE CTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NO TES :
1. CO NTRO LLING DIMENSIO N : MILLIM ETER.
2. ALL DIM EN SION S AR E SH O WN IN M ILL IM ET ER S ( INCHES ).
3. O U T LIN E C O N F O R MS T O E IA-481 & E IA-54 1.
NOTES :
1 . OUT L INE CONF ORMS T O EIA-4 8 1.
16 m m
1 3 INCH
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
