Features * 32-Mbit Flash and 4-Mbit/8-Mbit SRAM * Single 66-ball (8 mm x 11 mm x 1.2 mm) CBGA Package * 2.7V to 3.3V Operating Voltage Flash * 2.7V to 3.3V Read/Write * Access Time - 85 ns * Sector Erase Architecture * * * * * * * * * * - Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time - 20 s Fast Sector Erase Time - 200 ms Suspend/Resume Feature for Erase and Program - Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector - Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation - 25 mA Active - 10 A Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization Sector Lockdown Support Top or Bottom Boot Block Configuration Available 128-bit Protection Register SRAM * * * * * * 4-megabit (256K x 16)/8-megabit (512K x 16) 2.7V to 3.3V VCC 70 ns Access Time Fully Static Operation and Tri-state Output 1.2V (Min) Data Retention Industrial Temperature Range 32-megabit Flash + 4-megabit/ 8-megabit SRAM Stack Memory AT52BR3224 AT52BR3224T AT52BR3228 AT52BR3228T Preliminary Device Number AT52BR3224 AT52BR3224T AT52BR3228 AT52BR3228T Flash Boot Location Flash Plane Architecture SRAM Configuration Bottom 32M 256K x 16 Top 32M 256K x 16 Bottom 32M 512K x 16 Top 32M 512K x 16 Rev. 1682A-10/01 1 Pin Configurations Pin Name Function A0 - A16 Flash/SRAM Common Address Input A17 - A20 Flash Address Input AT52BR3224(T)/3228(T) (Top View) 1 2 3 4 5 6 7 8 9 10 11 12 NC NC A20 A11 A15 A14 A13 A12 GND NC NC NC A16 A8 A10 A9 I/O15 SWE I/O14 I/O7 I/O13 I/O5 NC NC A B CE Flash Chip Enable OE Flash Output Enable WE Flash Write Enablee D RESET Flash Reset E RDY/BUSY Flash READY/BUSY Output F VPP Flash Power Supply for Accelerated Program/Erase Operations G VCC Flash Power GND Flash Ground I/O0 - I/O15 Data Inputs/Outputs NC No Connect SLB SRAM Lower Byte SUB SRAM Upper Byte SVCC SRAM Power SGND SRAM Ground SCS1 SRAM Chip Select 1 SCS2 SRAM Chip Select 2 SWE SRAM Write Enable SOE SRAM Output Enable 2 C WE RDY/BUSY I/O6 I/O4 I/O12 SCS2 SVCC VCC SGND RES NC VPP A19 SLB SUB SOE A18 A17 A7 NC A5 A4 I/O11 I/O10 I/O2 I/O3 I/O9 I/O8 I/O0 I/O1 A6 A3 A2 A1 SCS1 A0 CE GND OE NC H NC NC AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Block Diagram ADDRESS OE WE SOE SWE RES CE RDY/BUSY 4/8-Mbit SRAM 32-Mbit FLASH SCS1 SCS2 DATA Description The AT52BR3224(T) combines a 32-megabit Flash (2M x 16) and a 4-megabit SRAM (organized as 256K x 16) in a stacked 66-ball CBGA package. The AT52BR3228(T) combines a 32-megabit Flash (2M x 16) and an 8-megabit SRAM (organized as 512K x 16) in a stacked 66-ball CBGA package. The stacked modules operate at 2.7V to 3.3V in the industrial temperature range. Absolute Maximum Ratings Temperature under Bias .................................. -40C to +85C Storage Temperature ..................................... -55C to +150C All Input Voltages except VPP and RESET (including NC Pins) with Respect to Ground .....................................-0.2V to +3.3V *NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage on VPP with Respect to Ground ..................................-0.2V to + 6.25V Voltage on RESET with Respect to Ground ...................................-0.2V to +13.5V All Output Voltages with Respect to Ground .....................................-0.2V to +0.2V DC and AC Operating Range AT52BR3224(T)/3228(T)-85 Operating Temperature (Case) VCC Power Supply Industrial -40C - 85C 2.7V to 3.3V 3 1682A-10/01 32-megabit Flash Description The 32-megabit Flash memory is organized as 2,097,152 words of 16 bits each. The x16 data appears on I/O0 - I/O15. The memory is divided into 71 sectors for erase operations. The device features CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see "Sector Lockdown" section). To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by the toggle bit. The VPP pin provides data protection and faster programming. When the VPP input is below 0.8V, the program and erase functions are inhibited. When VPP is at 1.65V or above, normal program and erase operations can be performed. With VPP at 5.0V or 12.0V, the program and erase operations are accelerated. A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not work while in this mode; if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code. 4 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) 32-megabit Flash Memory Block Diagram I/O0 - I/O15 INPUT BUFFER INPUT BUFFER IDENTIFIER REGISTER STATUS REGISTER DATA REGISTER A0 - A20 OUTPUT MULTIPLEXER OUTPUT BUFFER CE WE COMMAND REGISTER OE ADDRESS LATCH RESET DATA COMPARATOR Y-DECODER Y-GATING RDY/BUSY WRITE STATE MACHINE PROGRAM/ERASE VOLTAGE SWITCH VPP VCC GND X-DECODER MAIN MEMORY 5 1682A-10/01 Device Operation READ: The 32-megabit Flash is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins are asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. COMMAND SEQUENCES: When the device is first powered on, it will be reset to the read or standby mode, depending upon the state of the control line inputs. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the "Command Definition in Hex" table on page 14 (I/O8 - I/O15 are don't care inputs for the command codes). The command sequences are written by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Standard microprocessor write timings are used. The address locations used in the command sequences are not affected by entering the command sequences. RESET: A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET input halts the present device operation and puts the outputs of the device in a high impedance state. When a high level is reasserted on the RESET pin, the device returns to the read or standby mode, depending upon the state of the control inputs. ERASURE: Before a word can be reprogrammed, it must be erased. The erased state of memory bits is a logical "1". The entire device can be erased by using the Chip Erase command or individual sectors can be erased by using the Sector Erase command. CHIP ERASE: The entire device can be erased at one time by using the six-byte chip erase software code. After the chip erase has been initiated, the device will internally time the erase operation so that no external clocks are required. The maximum time to erase the chip is tEC. If the sector lockdown has been enabled, the chip erase will not erase the data in the sector that has been locked out; it will erase only the unprotected sectors. After the chip erase, the device will return to the read or standby mode. SECTOR ERASE: As an alternative to a full chip erase, the device is organized into 71 sectors (SA0 - SA70) that can be individually erased. The Sector Erase command is a six-bus cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while the 30H data input command is latched on the rising edge of WE. The sector erase starts after the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will automatically time to completion. The maximum time to erase a sector is tSEC. When the sector programming lockdown feature is not enabled, the sector will erase (from the same Sector Erase command). An attempt to erase a sector that has been protected will result in the operation terminating in 2 s. WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logical "0") on a word-by-word basis. Programming is accomplished via the internal device command register and is a four-bus cycle operation. The device will automatically generate the required internal program pulses. Any commands written to the chip during the embedded programming cycle will be ignored. If a hardware reset happens during programming, the data at the location being programmed will be corrupted. Please note that a data "0" cannot be programmed back to a "1"; only erase operations can convert "0"s to "1"s. Programming is completed after the specified tBP cycle time. The Data Polling feature or the Toggle Bit feature may be 6 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) used to indicate the end of a program cycle. If the erase/program status bit is a "1", the device was not able to verify that the erase or program operation was performed successfully. VPP PIN: The circuitry of the 32-megabit Flash is designed so that the device can be programmed or erased from the VCC power supply or from the VPP input pin. When VPP is greater than 1.65V and less than or equal to the VCC pin, the device selects the VCC supply for programming and erase operations. When the VPP pin is greater than the VCC supply, the device will select the VPP input as the power supply for programming and erase operations. The device will allow for some variations between the VPP input and the VCC power supply in its selection of VCC or VPP for program or erase operations. If the VPP pin is within 0.3V of VCC for 2.65V < VCC < 3.6V, then the program or erase operations will use VCC and disregard the VPP input signal. When the VPP signal is used for program and erase operations, the VPP must be in the 5V 0.5V or 12V 0.5V range to ensure proper operation. The Vpp pin cannot be left floating. PROGRAM/ERASE STATUS: The device provides several bits to determine the status of a program or erase operation: I/O2, I/O3, I/O5, I/O6 and I/O7. The "Status Bit Table" on page 13 and the following four sections describe the function of these bits. To provide greater flexibility for system designers, the 32-megabit Flash contains a programmable configuration register. The configuration register allows the user to specify the status bit operation. The configuration register can be set to one of two different values, "00" or "01". If the configuration register is set to "00", the part will automatically return to the read mode after a successful program or erase operation. If the configuration register is set to a "01", a Product ID Exit command must be given after a successful program or erase operation before the part will return to the read mode. It is important to note that whether the configuration register is set to a "00" or to a "01", any unsuccessful program or erase operation requires using the Product ID Exit command to return the device to read mode. The default value (after power-up) for the configuration register is "00". Using the four-bus cycle Set Configuration Register command as shown in the "Command Definition in Hex" table on page 14, the value of the configuration register can be changed. Voltages applied to the RESET pin will not alter the value of the configuration register. The value of the configuration register will affect the operation of the I/O7 status bit as described below. DATA POLLING: The 32-megabit Flash features Data Polling to indicate the end of a program cycle. If the status configuration register is set to a "00", during a program cycle an attempted read of the last word loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. During a chip or sector erase operation, an attempt to read the device will give a "0" on I/O7. Once the program or erase cycle has completed, true data will be read from the device. Data Polling may begin at any time during the program cycle. Please see "Status Bit Table" on page 13 for more details. If the status bit configuration register is set to a "01", the I/O7 status bit will be low while the device is actively programming or erasing data. I/O7 will go high when the device has completed a program or erase operation. Once I/O7 has gone high, status information on the other pins can be checked. The Data Polling status bit must be used in conjunction with the erase/program and VPP status bit as shown in the algorithm in Figures 1 and 2 on page 11. TOGGLE BIT: In addition to Data Polling the 32-megabit Flash provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the memory will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling 7 1682A-10/01 and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. Please see "Status Bit Table" on page 13 for more details. The toggle bit status bit should be used in conjunction with the erase/program and VPP status bit as shown in the algorithm in Figures 3 and 4 on page 12. ERASE/PROGRAM STATUS BIT: The device offers a status bit on I/O5, which indicates whether the program or erase operation has exceeded a specified internal pulse count limit. If the status bit is a "1", the device is unable to verify that an erase or a word program operation has been successfully performed. The device may also output a "1" on I/O5 if the system tries to program a "1" to a location that was previously programmed to a "0". Only an erase operation can change a "0" back to a "1". If a program (Sector Erase) command is issued to a protected sector, the protected sector will not be programmed (erased). The device will go to a status read mode and the I/O5 status bit will be set high, indicating the program (erase) operation did not complete as requested. Once the erase/program status bit has been set to a "1", the system must write the Product ID Exit command to return to the read mode. The erase/program status bit is a "0" while the erase or program operation is still in progress. Please see "Status Bit Table" on page 13 for more details. VPP STATUS BIT: The 32-megabit Flash provides a status bit on I/O3, which provides information regarding the voltage level of the VPP pin. During a program or erase operation, if the voltage on the VPP pin is not high enough to perform the desired operation successfully, the I/O3 status bit will be a "1". Once the VPP status bit has been set to a "1", the system must write the Product ID Exit command to return to the read mode. On the other hand, if the voltage level is high enough to perform a program or erase operation successfully, the VPP status bit will output a "0". Please see "Status Bit Table" on page 13 for more details. SECTOR LOCKDOWN: Each sector has a programming lockdown feature. This feature prevents programming of data in the designated sectors once the feature has been enabled. These sectors can contain secure code that is used to bring up the system. Enabling the lockdown feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; any sector's usage as a write-protected region is optional to the user. At power-up or reset, all sectors are unlocked. To activate the lockdown for a specific sector, the six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked down, the contents of the sector is read-only and cannot be erased or programmed. SECTOR LOCKDOWN DETECTION: A software method is available to determine if programming of a sector is locked down. When the device is in the software product identification mode (see "Software Product Identification Entry/Exit" sections on page 27), a read from address location 00002H within a sector will show if programming the sector is locked down. If the data on I/O0 is low, the sector can be programmed; if the data on I/O0 is high, the program lockdown feature has been enabled and the sector cannot be programmed. The software product identification exit code should be used to return to standard operation. SECTOR LOCKDOWN OVERRIDE: The only way to unlock a sector that is locked down is through reset or power-up cycles. After power-up or reset, the content of a sector that is locked down can be erased and reprogrammed. ERASE SUSPEND/ERASE RESUME: The Erase Suspend command allows the system to interrupt a sector or chip erase operation and then program or read data from a different sector within the memory. After the Erase Suspend command is given, the device requires a maximum time of 15 s to suspend the erase operation. After the 8 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) erase operation has been suspended, the system can then read data or program data to any other sector within the device. An address is not required during the Erase Suspend command. During a sector erase suspend, another sector cannot be erased. To resume the sector erase operation, the system must write the Erase Resume command. The Erase Resume command is a one-bus cycle command. The device also supports an erase suspend during a complete chip erase. While the chip erase is suspended, the user can read from any sector within the memory that is protected. The command sequence for a chip erase suspend and a sector erase suspend are the same. PROGRAM SUSPEND/PROGRAM RESUME: The Program Suspend command allows the system to interrupt a programming operation and then read data from a different word within the memory. After the Program Suspend command is given, the device requires a maximum of 20 s to suspend the programming operation. After the programming operation has been suspended, the system can then read data from any other word within the device. An address is not required during the program suspend operation. To resume the programming operation, the system must write the Program Resume command. The program suspend and resume are one-bus cycle commands. The command sequence for the erase suspend and program suspend are the same, and the command sequence for the erase resume and program resume are the same. PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. For details, see "Operating Modes" on page 20 (for hardware operation) or "Software Product Identification Entry/Exit" sections on page 27. The manufacturer and device codes are the same for both modes. 128-BIT PROTECTION REGISTER: The 32-megabit Flash contains a 128-bit register that can be used for security purposes in system design. The protection register is divided into two 64-bit blocks. The two blocks are designated as block A and block B. The data in block A is non-changeable and is programmed at the factory with a unique number. The data in block B is programmed by the user and can be locked out such that data in the block cannot be reprogrammed. To program block B in the protection register, the four-bus cycle Program Protection Register command must be used as shown in the "Command Definition in Hex" table on page 14. To lock out block B, the four-bus cycle Lock Protection Register command must be used as shown in the "Command Definition in Hex" table. Data bit D1 must be zero during the fourth bus cycle. All other data bits during the fourth bus cycle are don't cares. To determine whether block B is locked out, the Product ID Entry command is given followed by a read operation from address 80H. If data bit D1 is zero, block B is locked. If data bit D1 is one, block B can be reprogrammed. Please see the "Protection Register Addressing Table" on page 15 for the address locations in the protection register. To read the protection register, the Product ID Entry command is given followed by a normal read operation from an address within the protection register. After determining whether block B is protected or not, or reading the protection register, the Product ID Exit command must be given prior to performing any other operation. RDY/BUSY: For the 32-megabit Flash, an open-drain READY/BUSY output pin provides another method of detecting the end of a program or erase operation. RDY/BUSY is actively pulled low during the internal program and erase cycles and is released at the completion of the cycle. The open-drain connection allows for OR-tying of several devices to the same RDY/BUSY line. Please see "Status Bit Table" on page 13 for more details. 9 1682A-10/01 HARDWARE DATA PROTECTION: The Hardware Data Protection feature protects against inadvertent programs to the Flash in the following ways: (a) VCC sense: if VCC is below 1.8V (typical), the program function is inhibited. (b) VCC power-on delay: once VCC has reached the VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c) Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Noise filter: pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle. (e) Program inhibit: VPP is less than VILPP. (f) VPP power-on delay: once VPP has reached 1.65V, program and erase operations are inhibited for 100 ns. INPUT LEVELS: While operating with a 2.65V to 3.6V power supply, the address inputs and control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V. OUTPUT LEVELS: For the 32-megabit Flash, output high levels (VOH) are equal to VCCQ - 0.2V (not VCC). For 2.65V - 3.6V output levels, VCCQ must be tied to VCC. For 1.8V - 2.2V output levels, VCCQ must be regulated to 2.0V 10%, while VCC must be regulated to 2.65V - 3.0V (for minimum power). 10 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Figure 2. Data Polling Algorithm (Configuration Register = 01) Figure 1. Data Polling Algorithm (Configuration Register = 00) START START Read I/O7 - I/O0 Addr = VA Read I/O7 - I/O0 Addr = VA NO I/O7 = 1? I/O7 = Data? YES YES NO I/O3, I/O5 = 1? NO NO I/O3, I/O5 = 1? YES YES Program/Erase Operation Not Successful, Write Product ID Exit Command Read I/O7 - I/O0 Addr = VA I/O7 = Data? YES NO Program/Erase Operation Not Successful, Write Product ID Exit Command Notes: Note: Program/Erase Operation Successful, Write Product ID Exit Command 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. Program/Erase Operation Successful, Device in Read Mode 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. I/O7 should be rechecked even if I/O5 = "1" because I/O7 may change simultaneously with I/O5. 11 1682A-10/01 Figure 3. Toggle Bit Algorithm (Configuration Register = 00) Figure 4. Toggle Bit Algorithm (Configuration Register = 01) START START Read I/O7 - I/O0 Read I/O7 - I/O0 Read I/O7 - I/O0 Read I/O7 - I/O0 Toggle Bit = Toggle? NO Toggle Bit = Toggle? YES NO YES NO I/O3, I/O5 = 1? YES Read I/O7 - I/O0 Twice NO Toggle Bit = Toggle? YES Program/Erase Operation Not Successful, Write Product ID Exit Command Note: 12 I/O3, I/O5 = 1? YES Read I/O7 - I/O0 Twice Toggle Bit = Toggle? NO NO YES Program/Erase Operation Not Successful, Write Product ID Exit Command Program/Erase Operation Successful 1. The system should recheck the toggle bit even if I/O5 = "1" because the toggle bit may stop toggling as I/O5 changes to "1". Note: Program/Erase Operation Successful, Write Product ID Exit Command 1. The system should recheck the toggle bit even if I/O5 = "1" because the toggle bit may stop toggling as I/O5 changes to "1". AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Status Bit Table Status Bit I/O7 I/O7 I/O6 I/O5(1) I/O3(2) I/O2 RDY/BUSY 00 01 00/01 00/01 00/01 00/01 00/01 I/O7 0 TOGGLE 0 0 1 0 Erasing 0 0 TOGGLE 0 0 TOGGLE 0 Erase Suspended & Read Erasing Sector 1 1 1 0 0 TOGGLE 1 Erase Suspended & Read Non-erasing Sector DATA DATA DATA DATA DATA DATA 1 Erase Suspended & Program Non-erasing Sector I/O7 0 TOGGLE 0 0 TOGGLE 0 Configuration Register Programming Notes: 1. I/O5 switches to a "1" when a program or an erase operation has exceeded the maximum time limits or when a program or sector erase operation is performed on a protected sector. 2. I/O3 switches to a "1" when the VPP level is not high enough to successfully perform program and erase operations. 13 1682A-10/01 Command Definition in Hex(1) Command Sequence 1st Bus Cycle 2nd Bus Cycle Bus Cycles Addr Data Read 1 Addr DOUT Chip Erase 6 555 AA 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle Addr Data Addr Data Addr Data Addr Data Addr Data AAA(2) 55 555 80 555 AA AAA 55 555 10 Sector Erase 6 555 AA AAA 55 555 80 555 AA Word Program 4 555 AA AAA 55 555 A0 Addr DIN Enter Single Pulse Program Mode 6 555 AA AAA 55 555 80 555 Single Pulse Word Program 1 Addr DIN Sector Lockdown 6 555 AA AAA(2) 55 555 80 Erase/Program Suspend 1 XXX B0 Erase/Program Resume 1 XXX 30 Product ID Entry 3 555 AA AAA 55 555 90 (5) Product ID Exit 3 555 AA AAA 55 555 F0 Product ID Exit(5) 1 XXX F0 Program Protection Register 4 555 AA AAA 55 555 Lock Protection Register - Block B 4 555 AA AAA 55 Status of Block B Protection 4 555 AA AAA Set Configuration Register 4 555 AA AAA Notes: 6th Bus Cycle (3)(4) AAA 55 SA AA AAA 55 555 A0 555 AA AAA 55 SA(3)(4) 60 C0 Addr DIN 555 C0 080 X0 55 555 90 80 DOUT(6) 55 555 D0 XXX 00/01(7) 30 1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). In word operation I/O15 - I/O8 are don't care. The ADDRESS FORMAT shown for each bus cycle is as follows: A11 - A0 (Hex). Address A20 through A11 are don't care. 2. Since A11 is a Don't Care, AAA can be replaced with 2AA. 3. SA = sector address. Any word address within a sector can be used to designate the sector address (see pages 16 and 18 for details). 4. Once a sector is in the lockdown mode, data in the protected sector cannot be changed unless the chip is reset or power cycled. 5. Either one of the Product ID Exit commands can be used. 6. If data bit D1 is "0", block B is locked. If data bit D1 is "1", block B can be reprogrammed. 7. The default state (after power-up) of the configuration register is "00". Absolute Maximum Ratings* Temperature under Bias ................................ -55C to +125C Storage Temperature ..................................... -65C to +150C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V *NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage on OE and VPP with Respect to Ground ...................................-0.6V to +13.0V 14 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Protection Register Addressing Table Word Use Block A7 A6 A5 A4 A3 A2 A1 A0 0 Factory A 1 0 0 0 0 0 0 1 1 Factory A 1 0 0 0 0 0 1 0 2 Factory A 1 0 0 0 0 0 1 1 3 Factory A 1 0 0 0 0 1 0 0 4 User B 1 0 0 0 0 1 0 1 5 User B 1 0 0 0 0 1 1 0 6 User B 1 0 0 0 0 1 1 1 7 User B 1 0 0 0 1 0 0 0 Note: All address lines not specified in the above table must be "0" when accessing the protection register, i.e., A20 - A8 = 0. 15 1682A-10/01 Bottom Boot 32-megabit Flash - Sector Address Table x16 Sector Size (Words) Address Range (A20 - A0) SA0 4K 00000 - 00FFF SA1 4K 01000 - 01FFF SA2 4K 02000 - 02FFF SA3 4K 03000 - 03FFF SA4 4K 04000 - 04FFF SA5 4K 05000 - 05FFF SA6 4K 06000 - 06FFF SA7 4K 07000 - 07FFF SA8 32K 08000 - 0FFFF SA9 32K 10000 - 17FFF SA10 32K 18000 - 1FFFF SA11 32K 20000 - 27FFF SA12 32K 28000 - 2FFFF SA13 32K 30000 - 37FFF SA14 32K 38000 - 3FFFF SA15 32K 40000 - 47FFF SA16 32K 48000 - 4FFFF SA17 32K 50000 - 57FFF SA18 32K 58000 - 5FFFF SA19 32K 60000 - 67FFF SA20 32K 68000 - 6FFFF SA21 32K 70000 - 77FFF SA22 32K 78000 - 7FFFF SA23 32K 80000 - 87FFF SA24 32K 88000 - 8FFFF SA25 32K 90000 - 97FFF SA26 32K 98000 - 9FFFF SA27 32K A0000 - A7FFF SA28 32K A8000 - AFFFF SA29 32K B0000 - B7FFF SA30 32K B8000 - BFFFF SA31 32K C0000 - C7FFF SA32 32K C8000 - CFFFF SA33 32K D0000 - D7FFF SA34 32K D8000 - DFFFF SA35 32K E0000 - E7FFF 16 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Bottom Boot 32-megabit Flash - Sector Address Table (Continued) x16 Sector Size (Words) Address Range (A20 - A0) SA36 32K E8000 - EFFFF SA37 32K F0000 - F7FFF SA38 32K F8000 - FFFFF SA39 32K 100000 - 107FFF SA40 32K 108000 - 10FFFF SA41 32K 110000 - 117FFF SA42 32K 118000 - 11FFFF SA43 32K 120000 - 127FFF SA44 32K 128000 - 12FFFF SA45 32K 130000 - 137FFF SA46 32K 138000 - 13FFFF SA47 32K 140000 - 147FFF SA48 32K 148000 - 14FFFF SA49 32K 150000 - 157FFF SA50 32K 158000 - 15FFFF SA51 32K 160000 - 167FFF SA52 32K 168000 - 16FFFF SA53 32K 170000 - 177FFF SA54 32K 178000 - 17FFFF SA55 32K 180000 - 187FFF SA56 32K 188000 - 18FFFF SA57 32K 190000 - 197FFF SA58 32K 198000 - 19FFFF SA59 32K 1A0000 - 1A7FFF SA60 32K 1A8000 - 1AFFFF SA61 32K 1B0000 - 1B7FFF SA62 32K 1B8000 - 1BFFFF SA63 32K 1C0000 - 1C7FFF SA64 32K 1C8000 - 1CFFFF SA65 32K 1D0000 - 1D7FFF SA66 32K 1D8000 - 1DFFFF SA67 32K 1E0000 - 1E7FFF SA68 32K 1E8000 - 1EFFFF SA69 32K 1F0000 -1F7FFF SA70 32K 1F8000 - 1FFFF 17 1682A-10/01 Top Boot 32-megabit Flash - Sector Address Table x16 Sector Size (Words) Address Range (A20 - A0) SA0 32K 00000 - 07FFF SA1 32K 08000 - 0FFFF SA2 32K 10000 - 17FFF SA3 32K 18000 - 1FFFF SA4 32K 20000 - 27FFF SA5 32K 28000 - 2FFFF SA6 32K 30000 - 37FFF SA7 32K 38000 - 3FFFF SA8 32K 40000 - 47FFF SA9 32K 48000 - 4FFFF SA10 32K 50000 - 57FFF SA11 32K 58000 - 5FFFF SA12 32K 60000 - 67FFF SA13 32K 68000 - 6FFFF SA14 32K 70000 - 77FFF SA15 32K 78000 - 7FFFF SA16 32K 80000 - 87FFF SA17 32K 88000 - 8FFFF SA18 32K 90000 - 97FFF SA19 32K 98000 - 9FFFF SA20 32K A0000 - A7FFF SA21 32K A8000 - AFFFF SA22 32K B0000 - B7FFF SA23 32K B8000 - BFFFF SA24 32K C0000 - C7FFF SA25 32K C8000 - CFFFF SA26 32K D0000 - D7FFF SA27 32K D8000 - DFFFF SA28 32K E0000 - E7FFF SA29 32K E8000 - EFFFF SA30 32K F0000 - F7FFF SA31 32K F8000 - FFFFF SA32 32K 100000 - 107FFF SA33 32K 108000 - 10FFFF SA34 32K 110000 - 117FFF SA35 32K 118000 - 11FFFF 18 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Top Boot 32-megabit Flash - Sector Address Table (Continued) x16 Sector Size (Words) Address Range (A20 - A0) SA36 32K 120000 - 127FFF SA37 32K 128000 - 12FFFF SA38 32K 130000 - 137FFF SA39 32K 138000 - 13FFFF SA40 32K 140000 - 147FFF SA41 32K 148000 - 14FFFF SA42 32K 150000 - 157FFF SA43 32K 158000 - 15FFFF SA44 32K 160000 - 167FFF SA45 32K 168000 - 16FFFF SA46 32K 170000 - 177FFF SA47 32K 178000 - 17FFFF SA48 32K 180000 - 187FFF SA49 32K 188000 - 18FFFF SA50 32K 190000 - 197FFF SA51 32K 198000 - 19FFFF SA52 32K 1A0000 - 1A7FFF SA53 32K 1A8000 - 1AFFFF SA54 32K 1B0000 - 1B7FFF SA55 32K 1B8000 - 1BFFFF SA56 32K 1C0000 - 1C7FFF SA57 32K 1C8000 - 1CFFFF SA58 32K 1D0000 - 1D7FFF SA59 32K 1D8000 - 1DFFFF SA60 32K 1E0000 - 1E7FFF SA61 32K 1E8000 - 1EFFFF SA62 32K 1F0000 - 1F7FFF SA63 4K 1F8000 - 1F8FFF SA64 4K 1F9000 - 1F9FFF SA65 4K 1FA000 - 1FAFFF SA66 4K 1FB000 - 1FBFFF SA67 4K 1FC000 - 1FCFFF SA68 4K 1FD000 - 1FDFFF SA69 4K 1FE000 - 1FEFFF SA70 4K 1FF000 - 1FFFFF 19 1682A-10/01 DC and AC Operating Range Operating Temperature (Case) AT52BR3224(T)-85 AT52BR3228(T)-85 -40C - 85C -40C - 85C 2.7V - 3.3V 2.7V - 3.3V Industrial VCC Power Supply Operating Modes Mode Read Program/Erase (2) Standby/Program Inhibit CE OE WE RESET VPP VIL VIL VIH VIH X VIL VIH (1) VIL VIH VIHPP (6) VIH X X VIH X X X VIH VIH X X VIL X VIH X X X X VIH VILPP(7) Output Disable X VIH X VIH X Reset X X X VIL X VIL VIL VIH VIH Program Inhibit Ai I/O Ai DOUT Ai DIN X High-Z High-Z X High-Z Product Identification Hardware Software(5) Notes: 20 1. 2. 3. 4. 5. 6. 7. VIH A1 - A20 = VIL, A9 = VH(3), A0 = VIL Manufacturer Code(4) A1 - A20 = VIL, A9 = VH(3), A0 = VIH Device Code(4) A0 = VIL, A1 - A20 = VIL Manufacturer Code(4) A0 = VIH, A1 - A20 = VIL Device Code(4) X can be VIL or VIH. Refer to AC programming waveforms on page 25. VH = 12.0V 0.5V. Manufacturer Code: 001FH, Device Code: 00C8H (x16)-AT52BR3224/3228; 00C9H (x16)-AT52BR3224T/3228T. See details under "Software Product Identification Entry/Exit" on page 27. VIHPP (min) = 1.65V; VIHPP (max) = 3.6V. For faster erase/program operations, VPP can be set to 5.0V 0.5V or 12V 0.5V. VILPP (max) = 0.8V. AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO Max Units VIN = 0V to VCC 10 A Output Leakage Current VI/O = 0V to VCC 10 A ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC 10 A ISB2 VCC Standby Current TTL CE = 2.0V to VCC 1 mA ISB3 VCC Standby Current TTL CE = 2.0V to VCC, VCC = 2.85V 10 A ICC (1)(2) VCC Active Read Current f = 5 MHz; IOUT = 0 mA 25 mA ICC1 VCC Programming Current (VPP = VCC) 45 mA A VPP Input Load Current VPP = 0V, VCC = 3.0V -100 IPP1 VPP = VCC = 3.0V 100 A ICC2 VCC Programming Current (VPP = 5.0V 0.5V) 40 mA IPP2 VPP Programming Current (VPP = 5.0V 0.5V) 5 mA ICC3 VCC Programming Current (VPP = 12.0V 0.5V) 40 mA IPP3 VPP Programming Current (VPP = 12.0V 0.5V) 10 mA VIL Input Low Voltage 0.6 V VIH Input High Voltage VOL1 Output Low Voltage IOL = 2.1 mA 0.45 V VOL2 Output Low Voltage IOL = 1.0 mA 0.20 V VOH1 Output High Voltage VOH2 Notes: Output High Voltage Min 2.0 IOH = -400 A VCCQ < 2.6V IOH = -400 A VCCQ 2.6V VCCQ - 0.2 2.4 IOH = -100 A VCCQ < 2.6V VCCQ - 0.1 IOH = -100 A VCCQ 2.6V 2.5 V V V V V V V 1. For 3.3V < VCC < 3.6V, ICC (max) = 30 mA. 2. In the erase mode, ICC is 65 mA. 21 1682A-10/01 AC Read Characteristics AT52BR3224(T)-85 Symbol Parameter tRC Read Cycle Time tACC Min AT52BR3228(T)-85 Max Min Max Units 85 85 ns Address to Output Delay 85 85 ns tCE(1) CE to Output Delay 85 85 ns tOE(2) OE to Output Delay 0 40 0 40 ns tDF(3)(4) CE or OE to Output Float 0 25 0 25 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tRO RESET to Output Delay 0 100 ns 100 ns AC Read Waveforms(1)(2)(3)(4) tRC ADDRESS ADDRESS VALID CE tCE tOE OE tDF tOH tACC tRO RESET OUTPUT Notes: 22 HIGH Z OUTPUT VALID 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Input Test Waveforms and Measurement Level tR, tF < 5 ns Output Test Load Pin Capacitance f = 1 MHz, T = 25C(1) Symbol CIN COUT Note: Typ Max Units Conditions 4 6 pF VIN = 0V 8 12 pF VOUT = 0V This parameter is characterized and is not 100% tested. 23 1682A-10/01 AC Word Load Characteristics Symbol Parameter Min Max Units tAS, tOES Address, OE Setup Time 0 ns tAH Address Hold Time 75 ns tCS Chip Select Setup Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 50 ns tDS Data Setup Time 40 ns tDH, tOEH Data, OE Hold Time 10 ns tWPH Write Pulse Width High 35 ns AC Word Load Waveforms WE Controlled CE Controlled 24 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Program Cycle Characteristics Symbol Parameter Min tBP Word Programming Time (VIHPP < VPP < 4.5V) Typ Max Units 20 200 s 10 100 tBPVPP Word Programming Time (VPP > 4.5V) tAS Address Setup Time 0 ns tAH Address Hold Time 75 ns tDS Data Setup Time 50 ns tDH Data Hold Time 10 ns tWP Write Pulse Width 50 ns tWPH Write Pulse Width High 35 ns tWC Write Cycle Time 85 ns 500 s tRP Reset Pulse Width tEC Chip Erase Cycle Time (VPP < 4.5V) 15 seconds ns tECVPP Chip Erase Cycle Time (VPP > 4.5V) 8 seconds tSEC Sector Erase Cycle Time (VPP < 4.5V) 200 400 ms tSECVPP Sector Erase Cycle Time (VPP > 4.5V) 100 150 ms tES Erase Suspend Time 15 s tPS Program Suspend Time 20 s Program Cycle Waveforms PROGRAM CYCLE OE CE tWP tBP tWPH WE tAS tAH A0 - A20 tDH 555 555 AAA tWC 555 ADDRESS tDS DATA 55 AA INPUT DATA A0 AA Sector or Chip Erase Cycle Waveforms OE (1) CE tWP tWPH WE tAS A0-A20 tAH 555 Notes: 555 555 AAA tWC DATA tDH Note 2 AAA tEC tDS AA 55 80 AA 55 Note 3 WORD 0 WORD 1 WORD 2 WORD 3 WORD 4 WORD 5 1. OE must be high only when WE and CE are both low. 2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased. (See note 3 under "Command Definitions in Hex" on page 14.) 3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H. 25 1682A-10/01 Data Polling Characteristics(1) Symbol Parameter Min tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns Max (2) tOE tWR Notes: Typ OE to Output Delay Units ns Write Recovery Time 1. These parameters are characterized and not 100% tested. 2. See tOE spec in "AC Read Characteristics" on page 22. 0 ns Data Polling Waveforms WE CE tOEH OE tDH tOE A0-A20 tWR HIGH Z I/O7 An An An An An Toggle Bit Characteristics(1) Symbol Parameter Min tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns (2) tOE OE to Output Delay tOEHP OE High Pulse tWR Notes: Write Recovery Time 1. These parameters are characterized and not 100% tested. 2. See tOE spec in "AC Read Characteristics" on page 22. Typ Max Units ns 50 ns 0 ns Toggle Bit Waveforms(1)(2)(3) Notes: 26 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling input(s). 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Software Product Identification Entry(1) Sector Lockdown Enable Algorithm(1) LOAD DATA AA TO ADDRESS 555 LOAD DATA AA TO ADDRESS 555 LOAD DATA 55 TO ADDRESS AAA LOAD DATA 55 TO ADDRESS AAA LOAD DATA 80 TO ADDRESS 555 LOAD DATA 90 TO ADDRESS 555 LOAD DATA AA TO ADDRESS 555 ENTER PRODUCT IDENTIFICATION MODE(2)(3)(5) LOAD DATA 55 TO ADDRESS AAA Software Product Identification Exit(1)(6) LOAD DATA AA TO ADDRESS 555 LOAD DATA 55 TO ADDRESS AAA OR LOAD DATA F0 TO ANY ADDRESS LOAD DATA 60 TO SECTOR ADDRESS EXIT PRODUCT IDENTIFICATION MODE(4) PAUSE 200 s(2) LOAD DATA F0 TO ADDRESS 555 EXIT PRODUCT IDENTIFICATION MODE(4) Notes: Notes: 1. Data Format: I/O15 - I/O8 (Don't Care); I/O7 - I/O0 (Hex) Address Format: A11 - A0 (Hex), A-1, and A11 - A20 (Don't Care). 2. Sector Lockdown feature enabled. 1. Data Format: I/O15 - I/O8 (Don't Care); I/O7 - I/O0 (Hex) 2. 3. 4. 5. 6. Address Format: A11 - A0 (Hex), A-1, and A11 - A20 (Don't Care). A1 - A20 = VIL. Manufacturer Code is read for A0 = VIL; Device Code is read for A0 = VIH. The device does not remain in identification mode if powered down. The device returns to standard operation mode. Manufacturer Code: 001FH(x16) Device Code: 00C8 - AT52BR3224/3228. 00C9H - AT52BR3224T/3228T. Either one of the Product ID Exit commands can be used. 27 1682A-10/01 4-megabit SRAM Description The 4-megabit SRAM is a high-speed, super low-power CMOS SRAM organized as 256K words by 16 bits. The SRAM uses high-performance full CMOS process technology and is designed for high-speed and low-power circuit technology. It is particularly well-suited for the high-density low-power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Features * Fully Static Operation and Tri-state Output * TTL Compatible Inputs and Outputs * Battery Backup - 1.2V (Min) Data Retention Voltage (V) Speed (ns) Operation Current/ICC (mA) (Max) 2.7 - 3.3 70 5 Standby Current (A) (Max) Temperature (C) 15 -40 - 85 Block Diagram ROW DECODER A0 MEMORY ARRAY 256K X 16 WRITE DRIVER COLUMN DECODER DATA I/O BUFFER SENSE AMP BLOCK DECODER PRE DECODER ADD INPUT BUFFER A17 I/O0 I/O7 I/O8 I/O15 SCS1 SCS2 SOE SLB SUB SWE 28 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Absolute Maximum Ratings(1) Symbol Parameter Rating Unit VIN, VOUT Input/Output Voltage -0.3 to 3.6 V VCC Power Supply -0.3 to 4.6 V TA Operating Temperature -40 to 85 C TSTG Storage Temperature -55 to 150 C PD Power Dissipation 1.0 W Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability. Truth Table I/O Pin SCS1 SCS2 H(1) X (1) L X X L SWE SOE X X X (1) H L H H L H SLB(2) SUB(2) X X H H L H H L L L L H H L H H I/O8 - I/O15 Power Deselected High-Z High-Z Standby Output Disabled High-Z High-Z Active DIN High-Z High-Z DIN DIN DIN DIN High-Z DOUT High-Z High-Z DOUT DOUT DOUT DOUT High-Z Write L L H H L L Read L Notes: I/O0 - I/O7 X L L Mode L Active Active 1. H = VIH, L = VIL, X = Don't Care (VIL or VIH) 2. SUB, SLB (Upper, Lower Byte Enable). These active LOW inputs allow individual bytes to be written or read. When SLB is LOW, data is written or read to the lower byte, I/O0 - I/O7. When SUB is LOW, data is written or read to the upper byte, I/O8 - I/O15. Recommended DC Operating Condition Symbol Parameter Min Typ Max Unit VCC Supply Voltage 2.7 3.0 3.3 V VSS Ground 0 0 0 V VIH Input High Voltage VCC + 0.3 V 0.6 V VIL (1) Note: Input Low Voltage 2.2 (1) -0.31 1. Undershoot: VIL = -1.5V for pulse width less than 30 ns. Undershoot is sampled, not 100% tested. 29 1682A-10/01 DC Electrical Characteristics TA = -40C to 85C Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current VSS < VIN < VCC -1 1 A ILO Output Leakage Current VSS < VOUT < VCC, SCS1 = VIH or SCS2=VIL or SOE = VIH or SWE = VIL or SUB = VIH, SLB = VIH -1 1 A ICC Operating Power Supply Current SCS1 = VIL, SCS2=VIH, VIN = VIH or VIL, II/O = 0 mA 5 mA ICC1 Average Operating Current SCS1 = VIL, SCS2 = VIH, VIN = VIH or VIL, Cycle Time = Min 100% Duty, II/O = 0 mA 35 mA SCS1 < 0.2V, SCS2 > VCC - 0.2V VIN < 0.2V or VIN > VCC - 0.2V, Cycle Time = 1 s 100% Duty, II/O = 0 mA 5 mA 0.5 mA SL 4 A LL 15 A 0.4 V ISB Standby Current (TTL Input) SCS1 = VIH or SCS2 = VIL or SUB, SLB = VIH VIN = VIH or VIL ISB1 Standby Current (CMOS Input) SCS1 > VCC - 0.2V or SCS2 < VSS + 0.2V or SUB, SLB > VCC - 0.2V VIN > VCC - 0.2V or VIN < VSS + 0.2V VOL Output Low IOL = 0.1 mA VOH Output High IOH = -0.1 mA 2.4 V Capacitance(1) (Temp = 25C, f = 1.0 MHz) Symbol Parameter CIN COUT Note: 30 Condition Max Unit Input Capacitance (Add, SCS1, SCS2, SLB, SUB, SWE, SOE) VIN = 0 V 8 pF Output Capacitance (I/O) VI/O = 0 V 10 pF 1. These parameters are sampled and not 100% tested. AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) AC Characteristics TA = -40C to 85C, Unless Otherwise Specified 70 ns # Symbol Parameter Min Max 1 tRC Read Cycle Time 2 tAA Address Access Time 70 ns 3 tACS Chip Select Access Time 70 ns 4 tOE Output Enable to Output Valid 35 ns 5 tBA SLB, SUB Access Time 70 ns 6 tCLZ Chip Select to Output in Low Z 10 ns 7 tOLZ Output Enable to Output in Low Z 5 ns 8 tBLZ SLB, SUB Enable to Output in Low Z 10 ns 9 tCHZ Chip Deselection to Output in High Z 0 30 ns 10 tOHZ Out Disable to Output in High Z 0 30 ns 11 tBHZ SLB, SUB Disable to Output in High Z 0 30 ns 12 tOH Output Hold from Address Change 10 ns 13 tWC Write Cycle Time 70 ns 14 tCW Chip Selection to End of Write 60 ns 15 tAW Address Valid to End of Write 60 ns 16 tBW SLB, SUB Valid to End of Write 60 ns 17 tAS Address Setup Time 0 ns 18 tWP Write Pulse Width 50 ns 19 tWR Write Recovery Time 0 ns 20 tWHZ Write to Output in High Z 0 21 tDW Data to Write Time Overlap 30 ns 22 tDH Data Hold from Write Time 0 ns 23 tOW Output Active from End of Write 5 ns 70 Unit ns 20 ns AC Test Conditions TA = -40C to 85C, Unless Otherwise Specified Parameter Value Input Pulse Level 0.4V to 2.2V Input Rise and Fall Time 5 ns Input and Output Timing Reference Level 1.5V Output Load CL = 5 pF + 1 TTL Load CL = 5 pF + 1 TTL Load CL = 30 pF + 1 TTL Load CL = 30 pF + 1 TTL Load 31 1682A-10/01 AC Test Loads VTM = 1.8V 4091 Ohm DOUT (1) CL Note: 32 3273 Ohm Including jig and scope capacitance. AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Timing Diagrams Read Cycle 1(1),(4) tRC ADDRESS tAA tOH tACS SCS1 SCS2 tCHZ(3) tBA SUB, SLB tBHZ(3) tOE SOE tOLZ(3) tOHZ (3) tBLZ(3) DATA OUT HIGH-Z tCLZ(3) DATA VALID Read Cycle 2(1),(2),(4) tRC ADDRESS tAA tOH tOH DATA OUT PREVIOUS DATA DATA VALID Read Cycle 3(1),(2),(4) SCS1 SUB, SLB SCS2 DATA OUT Notes: tACS tCLZ (3) tCHZ (3) DATA VALID 1. Read Cycle occurs whenever a high on the SWE and SOE is low, while SUB and/or SLB and SCS1 and SCS2 are in active status. 2. SOE = VIL. 3. Transition is measured + 200 mV from steady state voltage. This parameter is sampled and not 100% tested. 4. SCS1 in high for the standby, low for active. SCS2 in low for the standby, high for active. SUB and SLB in high for the standby, low for active. 33 1682A-10/01 Write Cycle 1 (SWE Controlled)(1),(4),(8) tWC ADDRESS tWR(2) tCW SCS1 SCS2 tAW tBW SUB, SLB tWP SWE tAS DATA IN tDW tDH tAS HIGH-Z DATA VALID tWHZ(3)(7) tOW (5) (5) DATA OUT Write Cycle 2 (SCS1, SCS2 Controlled)(1),(4),(8) tWC ADDRESS tWR(2) tCW tAS SCS1 tAW SCS2 tBW SUB, SLB tWP SWE tDW DATA IN HIGH-Z DATA OUT Notes: 34 tDH DATA VALID HIGH-Z 1. A write occurs during the overlap of a low SWE, a low SCS1, a high SCS2 and a low SUB and/or SLB. 2. tWR is measured from the earlier of SCS1, SLB, SUB, or SWE going high or SCS2 going low to the end of write cycle. 3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the output must not be applied. 4. If the SCS1, SLB and SUB low transition and SCS2 high transition occur simultaneously with the SWE low transition or after the SWE transition, outputs remain in a high impedance state. 5. Q (data out) is the same phase with the write data of this write cycle. 6. Q (data out) is the read data of the next address. 7. Transition is measured + 200 mV from steady state. This parameter is sampled and not 100% tested. 8. SCS1 in high for the standby, low for active SCS2 in low for the standby, high for active. SUB and SLB in high for the standby, low for active. AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Data Retention Electric Characteristic TA = -40C to 85C Symbol Parameter Test Condition Min VDR VCC for Data Retention SCS1 > VCC - 0.2V or SCS2 < VSS + 0.2V or SUB, SLB > VCC - 0.2V VIN > VCC - 0.2V or VIN < VSS + 0.2V 1.2 ICCDR Data Retention Current Vcc=1.5V, SCS1 > VCC - 0.2V or SCS2 < VSS + 0.2V or SUB, SLB > VCC - 0.2V VIN > VCC - 0.2V or VIN < VSS + 0.2V tCDR Chip Deselect to Data Retention Time tR Notes: Typ Max Unit 3.3 V SL 0.1 2 A LL 0.1 10 A See Data Retention Timing Diagram Operating Recovery Time 0 ns tRC ns 1. Typical values are under the condition of TA = 25C. Typical values are sampled and not 100% tested. 2. tRC is read cycle time. Data Retention Timing Diagram 1 DATA RETENTION MODE VCC 2.7V tCDR tR IH VDR SCS1 > VCC - 0.2V SCS1 VSS Data Retention Timing Diagram 2 DATA RETENTION MODE VCC 2.7V tCDR tR SCS2 VDR 0.4V VSS SCS2 < 0.2V 35 1682A-10/01 8-megabit SRAM Description The 8-megabit SRAM is a high-speed, super low-power CMOS SRAM organized as 512K words by 16 bits. The SRAM uses high-performance full CMOS process technology and is designed for high-speed and low-power circuit technology. It is particularly well-suited for the high-density low-power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Features * Fully Static Operation and Tri-state Output * TTL Compatible Inputs and Outputs * Battery Backup - 1.2V (Min) Data Retention Voltage (V) Speed (ns) Operation Current/ICC (mA) (Max) 2.7 - 3.3 70 5 Standby Current (A) (Max) Temperature (C) 15 -40 - 85 Block Diagram ROW DECODER A0 MEMORY ARRAY 512K X 16 WRITE DRIVER COLUMN DECODER DATA I/O BUFFER SENSE AMP BLOCK DECODER PRE DECODER ADD INPUT BUFFER A18 I/O0 I/O7 I/O8 I/O15 SCS1 SCS2 SOE SLB SUB SWE 36 AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Absolute Maximum Ratings(1) Symbol Parameter Rating Unit VIN, VOUT Input/Output Voltage -0.3 to 3.6 V VCC Power Supply -0.3 to 4.6 V TA Operating Temperature -40 to 85 C TSTG Storage Temperature -55 to 150 C PD Power Dissipation 1.0 W Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability. Truth Table I/O Pin SCS1 SCS2 (1) X (1) L H X X L SWE SOE X X X (1) H L H H L H SLB(2) SUB(2) X X H H L H H L L L L H H L H H I/O8 - I/O15 Power Deselected High-Z High-Z Standby Output Disabled High-Z High-Z Active DIN High-Z High-Z DIN DIN DIN DIN High-Z DOUT High-Z High-Z DOUT DOUT DOUT DOUT High-Z Write L L H H L L Read L Notes: I/O0 - I/O7 X L L Mode L Active Active 1. H = VIH, L = VIL, X = Don't Care (VIL or VIH) 2. SUB, SLB (Upper, Lower Byte Enable). These active LOW inputs allow individual bytes to be written or read. When SLB is LOW, data is written or read to the lower byte, I/O0 - I/O7. When SUB is LOW, data is written or read to the upper byte, I/O8 - I/O15. Recommended DC Operating Condition Symbol Parameter Min Typ Max Unit VCC Supply Voltage 2.7 3.0 3.3 V VSS Ground 0 0 0 V VIH Input High Voltage 2.2 VCC + 0.3 V VIL(1) Input Low Voltage -0.31(1) 0.6 V Note: 1. Undershoot: VIL = -1.5V for pulse width less than 30 ns. Undershoot is sampled, not 100% tested. 37 1682A-10/01 DC Electrical Characteristics TA = -40C to 85C Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current VSS < VIN < VCC -1 1 A ILO Output Leakage Current VSS < VOUT < VCC, SCS1 = VIH or SCS2=VIL or SOE = VIH or SWE = VIL or SUB = VIH, SLB = VIH -1 1 A ICC Operating Power Supply Current SCS1 = VIL, SCS2=VIH, VIN = VIH or VIL, II/O = 0 mA 5 mA ICC1 Average Operating Current SCS1 = VIL, SCS2 = VIH, VIN = VIH or VIL, Cycle Time = Min 100% Duty, II/O = 0 mA 40 mA SCS1 < 0.2V, SCS2 > VCC - 0.2V VIN < 0.2V or VIN > VCC - 0.2V, Cycle Time = 1 s 100% Duty, II/O = 0 mA 5 mA 0.5 mA 25 A 0.4 V ISB Standby Current (TTL Input) SCS1 = VIH or SCS2 = VIL or SUB, SLB = VIH VIN = VIH or VIL ISB1 Standby Current (CMOS Input) SCS1 > VCC - 0.2V or SCS2 < VSS + 0.2V or SUB, SLB > VCC - 0.2V VIN > VCC - 0.2V or VIN < VSS + 0.2V VOL Output Low IOL = 0.1 mA VOH Output High IOH = -0.1 mA LL 2.4 V Capacitance(1) (Temp = 25C, f = 1.0 MHz) Symbol Parameter CIN COUT Note: 38 Condition Max Unit Input Capacitance (Add, SCS1, SCS2, SLB, SUB, SWE, SOE) VIN = 0 V 8 pF Output Capacitance (I/O) VI/O = 0 V 10 pF 1. These parameters are sampled and not 100% tested. AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) AC Characteristics TA = -40C to 85C, Unless Otherwise Specified 70 ns # Symbol Parameter Min Max 1 tRC Read Cycle Time 2 tAA Address Access Time 70 ns 3 tACS Chip Select Access Time 70 ns 4 tOE Output Enable to Output Valid 35 ns 5 tBA SLB, SUB Access Time 70 ns 6 tCLZ Chip Select to Output in Low Z 10 ns 7 tOLZ Output Enable to Output in Low Z 5 ns 8 tBLZ SLB, SUB Enable to Output in Low Z 10 ns 9 tCHZ Chip Deselection to Output in High Z 0 30 ns 10 tOHZ Out Disable to Output in High Z 0 30 ns 11 tBHZ SLB, SUB Disable to Output in High Z 0 30 ns 12 tOH Output Hold from Address Change 10 ns 13 tWC Write Cycle Time 70 ns 14 tCW Chip Selection to End of Write 60 ns 15 tAW Address Valid to End of Write 60 ns 16 tBW SLB, SUB Valid to End of Write 60 ns 17 tAS Address Setup Time 0 ns 18 tWP Write Pulse Width 50 ns 19 tWR Write Recovery Time 0 ns 20 tWHZ Write to Output in High Z 0 21 tDW Data to Write Time Overlap 30 ns 22 tDH Data Hold from Write Time 0 ns 23 tOW Output Active from End of Write 5 ns 70 Unit ns 20 ns AC Test Conditions TA = -40C to 85C, Unless Otherwise Specified Parameter Value Input Pulse Level 0.4V to 2.2V Input Rise and Fall Time 5 ns Input and Output Timing Reference Level 1.5V Output Load CL = 5 pF + 1 TTL Load CL = 5 pF + 1 TTL Load CL = 30 pF + 1 TTL Load CL = 30 pF + 1 TTL Load 39 1682A-10/01 AC Test Loads VTM = 2.8V 1045 Ohm DOUT (1) CL Note: 40 2048 Ohm Including jig and scope capacitance. AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Timing Diagrams Read Cycle 1(1),(4) tRC ADDRESS tAA tOH tACS SCS1 SCS2 tCHZ(3) tBA SUB, SLB tBHZ(3) tOE SOE tOLZ(3) tOHZ (3) tBLZ(3) DATA OUT HIGH-Z tCLZ(3) DATA VALID Read Cycle 2(1),(2),(4) tRC ADDRESS tAA tOH tOH DATA OUT PREVIOUS DATA DATA VALID Read Cycle 3(1),(2),(4) SCS1 SUB, SLB SCS2 DATA OUT Notes: tACS tCLZ (3) tCHZ (3) DATA VALID 1. Read Cycle occurs whenever a high on the SWE and SOE is low, while SUB and/or SLB and SCS1 and SCS2 are in active status. 2. SOE = VIL. 3. Transition is measured + 200 mV from steady state voltage. This parameter is sampled and not 100% tested. 4. SCS1 in high for the standby, low for active. SCS2 in low for the standby, high for active. SUB and SLB in high for the standby, low for active. 41 1682A-10/01 Write Cycle 1 (SWE Controlled)(1),(4),(8) tWC ADDRESS tWR(2) tCW SCS1 SCS2 tAW tBW SUB, SLB tWP SWE tAS DATA IN tDW tDH tAS HIGH-Z DATA VALID tWHZ(3)(7) tOW (5) (5) DATA OUT Write Cycle 2 (SCS1, SCS2 Controlled)(1),(4),(8) tWC ADDRESS tWR(2) tCW tAS SCS1 tAW SCS2 tBW SUB, SLB tWP SWE tDW DATA IN HIGH-Z DATA OUT Notes: 42 tDH DATA VALID HIGH-Z 1. A write occurs during the overlap of a low SWE, a low SCS1, a high SCS2 and a low SUB and/or SLB. 2. tWR is measured from the earlier of SCS1, SLB, SUB, or SWE going high or SCS2 going low to the end of write cycle. 3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the output must not be applied. 4. If the SCS1, SLB and SUB low transition and SCS2 high transition occur simultaneously with the SWE low transition or after the SWE transition, outputs remain in a high impedance state. 5. Q (data out) is the same phase with the write data of this write cycle. 6. Q (data out) is the read data of the next address. 7. Transition is measured + 200 mV from steady state. This parameter is sampled and not 100% tested. 8. SCS1 in high for the standby, low for active SCS2 in low for the standby, high for active. SUB and SLB in high for the standby, low for active. AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Data Retention Electric Characteristic TA = -40C to 85C Symbol Parameter Test Condition Min VDR VCC for Data Retention SCS1 > VCC - 0.2V or SCS2 < VSS + 0.2V or SUB, SLB > VCC - 0.2V VIN > VCC - 0.2V or VIN < VSS + 0.2V 1.2 ICCDR Data Retention Current Vcc=1.5V, SCS1 > VCC - 0.2V or SCS2 < VSS + 0.2V or SUB, SLB > VCC - 0.2V VIN > VCC - 0.2V or VIN < VSS + 0.2V tCDR Chip Deselect to Data Retention Time tR Notes: Typ Max Unit 3.3 V SL 0.1 2 A LL 0.1 10 A See Data Retention Timing Diagram Operating Recovery Time 0 ns tRC ns 1. Typical values are under the condition of TA = 25C. Typical values are sampled and not 100% tested. 2. tRC is read cycle time. Data Retention Timing Diagram 1 DATA RETENTION MODE VCC 2.7V tCDR tR IH VDR SCS1 > VCC - 0.2V SCS1 VSS Data Retention Timing Diagram 2 DATA RETENTION MODE VCC 2.7V tCDR tR SCS2 VDR 0.4V VSS SCS2 < 0.2V 43 1682A-10/01 AT52BR3224T Ordering Information tACC (ns) Ordering Code Flash Boot Block Flash Plane Architecture SRAM Package Operation Range 85 AT52BR3224-85CI Bottom 32M 256K x 16 66C4 Industrial (-40 to 85C) 85 AT52BR3224T-85CI Top 32M 256K x 16 66C4 Industrial (-40 to 85C) 85 AT52BR3228-85CI Bottom 32M 512K x 16 66C4 Industrial (-40 to 85C) 85 AT52BR3228T-85CI Top 32M 512K x 16 66C4 Industrial (-40 to 85C) Package Type 66C4 44 66-ball, Plastic Chip-size Ball Grid Array Package (CBGA) AT52BR3224(T)/3228(T) 1682A-10/01 AT52BR3224(T)/3228(T) Packaging Information 66C4 - CBGA D 0.12 C C Seating Plane Marked A1 Identifier E SIDE VIEW A1 TOP VIEW A D1 1.10 REF 12 11 e 10 9 8 7 6 A1 BALL CORNER 5 4 3 2 1 A B C E1 D E F G H 1.20 REF e COMMON DIMENSIONS (*Unit of Measure = mm) Ob BOTTOM VIEW SYMBOL MIN NOM MAX A - - 1.20 A1 0.25 - - D 10.90 11.00 11.10 D1 E E1 NOTE 8.80 TYP 7.90 8.00 8.10 5.60 TYP e 0.80 TYP Ob 0.40 TYP 8/29/01 R 2325 Orchard Parkway TITLE: 66C4, 66 ball (12X8 Array), 11x8x1.2mm body, 0.8mm ball pitch San Jose, CA 95131 Chip-scale Ball Grid Array package (CBGA) DRAWING NO. REV 66C4 A 45 1682A-10/01 Atmel Headquarters Atmel Product Operations Corporate Headquarters Atmel Colorado Springs 2325 Orchard Parkway San Jose, CA 95131 TEL (408) 441-0311 FAX (408) 487-2600 Europe Atmel SarL Route des Arsenaux 41 Casa Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Atmel Asia, Ltd. Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimhatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan Atmel Japan K.K. 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL (719) 576-3300 FAX (719) 540-1759 Atmel Grenoble Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France TEL (33) 4-7658-3000 FAX (33) 4-7658-3480 Atmel Heilbronn Theresienstrasse 2 POB 3535 D-74025 Heilbronn, Germany TEL (49) 71 31 67 25 94 FAX (49) 71 31 67 24 23 Atmel Nantes La Chantrerie BP 70602 44306 Nantes Cedex 3, France TEL (33) 0 2 40 18 18 18 FAX (33) 0 2 40 18 19 60 Atmel Rousset Zone Industrielle 13106 Rousset Cedex, France TEL (33) 4-4253-6000 FAX (33) 4-4253-6001 Atmel Smart Card ICs Scottish Enterprise Technology Park East Kilbride, Scotland G75 0QR TEL (44) 1355-357-000 FAX (44) 1355-242-743 e-mail literature@atmel.com Web Site http://www.atmel.com (c) Atmel Corporation 2001. Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems. ATMEL (R) is the registered trademark of Atmel. Other terms and product names may be the trademarks of others. Printed on recycled paper. 1682A-10/01/0M