bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com PowerLANTM Master Gateway Battery Management Controller With PowerPumpTM Cell Balancing Technology Check for Samples: bq78PL116 FEATURES 1 * 23 * * * * * * * * * bq78PL116 Designed for Managing 3- to 16-Series-Cell Battery Systems - Support for LCD and Electronic Paper Displays or EPDs - Configurable for 11-A, 26-A, or 110-A Operating Currents Systems With More Than Four Series Cells Require External bq76PL102 Dual-Cell Monitors SmartSafety Features: - Prevention: Optimal Cell Management - Diagnosis: Improved Sensing of Cell Problems - Fail Safe: Detection of Event Precursors Rate-of-Change Detection of All Important Cell Characteristics: - Impedance - Cell Temperature PowerPump Technology Transfers Charge Efficiently From Cell to Cell During All Operating Conditions, Resulting in Longer Run Time and Cell Life - Includes User-Configurable PowerPump Cell-Balancing Modes High-Resolution 18-Bit Integrating Delta-Sigma Coulomb Counter for Precise Charge-Flow Measurements and Gas Gauging Multiple Independent - ADCs: One-per-Cell Voltage, Plus Separate Temperature, Current, and Safety Simultaneous, Synchronous Measurement of Pack Current and Individual Cell Voltages Very Low Power Consumption - < 400 A Active, < 185 A Standby, < 85 A Ship, and < 1 A Undervoltage Shutdown Accurate, Advanced Temperature Monitoring * * * * of Cells and MOSFETs With up to 4 Sensors Fail-Safe Operation of Pack Protection Circuits: Up to Three Power MOSFETs and One Secondary Safety Output (Fuse) Fully Programmable Voltage, Current, Balance, and Temperature-Protection Features External Inputs for Auxiliary MOSFET Control Smart Battery System 1.1 Compliant via SMBus APPLICATIONS * * * Portable Medical Instruments and Test Equipment Mobility Devices (E-Bike) Uninterruptible Power Supplies and Hand-Held Tools DESCRIPTION The bq78PL116 master gateway battery controller is part of a complete Li-Ion control, monitoring, and safety solution designed for large series cell strings. The bq78PL116 along with bq76PL102 PowerLANTM dual-cell monitors provide complete battery-system control, communications, and safety functions for a structure of three up to 16 series cells. This PowerLAN system provides simultaneous, synchronized voltage and current measurements using one A/D per-cell technology. This eliminates system-induced noise from measurements and allows the precise, continuous, real-time calculation of cell impedance under all operating conditions, even during widely fluctuating load conditions. PowerPump technology transfers charge between cells to balance their voltage and capacity. Balancing is possible during all battery modes: charge, discharge, and rest. Highly efficient charge-transfer circuitry nearly eliminates energy loss while providing true real-time balance between cells, resulting in longer run-time and improved cycle life. 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerLAN, PowerPump, bqWizard are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. (c) 2010-2011, Texas Instruments Incorporated bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. DESCRIPTION (CONTINUED) Temperature is sensed by up to 4 external sensors and one on-chip sensor. This permits accurate temperature monitoring of each cell individually. Firmware is then able to compensate for the temperature-induced effects on capacity, impedance, and OCV on a cell-by-cell basis, resulting in superior charge/ discharge and balancing control. External MOSFET control inputs provide user- definable direct hardware control over MOSFET states. Smart control prevents excessive current through MOSFET body diodes. Auxiliary inputs can be used for enhanced safety and control in large multicell arrays. The bq78PL116 is completely user-configurable, with parametric tables in flash memory to suit a variety of cell chemistries, operating conditions, safety controls, and data reporting needs. It is easily configured using the supplied bqWizardTM graphical user interface (GUI). The device is fully programmed and requires no algorithm or firmware development. The bq78PL116 pin functions of LED1/SEG1-LED5/SEG5, PSH/BP/TP, and FIELD support LED, LCD, and electronic paper displays (EPDs). The user can configure the bq78PL116 for the desired display type. P-LAN V1 P1N P1S XT1 FLASH CELL 4 DSG EFCID Balance Temp CELL 3 EFCIC Voltage SPROT RISC CPU Voltage Balance Temp Second-Level Safety CSBAT Coulomb Counter CCBAT CSPACK Current A/D Voltage Balance Temp PowerLAN Communication Link Reset Logic RSTN VLDO1 CHG First-Level Safety and FET Control SRAM V2 P2N P2S XT2 Balance Temp PRE CELL 2 V3 P3N P3S XT3 Voltage CELL 1 V4 P4N P4S XT4 Watchdog 2.5 V LDO Core / CPU Measure 7 GPIO Internal Oscillator CCPACK SMBus LED1-5/SEG1-5, PSH/BP/TP, FIELD SMBCLK SMBDAT Internal Temperature I/O Safety B0320-03 Figure 1. BQ78PL116 Internal Block Diagram 2 Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 B0332-03 Pack Positive www.ti.com Pack Negative V2 T2 V1 T1 V2 T2 V1 T1 9 V2 T2 8 V1 T1 7 V2 T2 6 V1 T1 5 V4 XT4 10 4 V3 XT3 11 3 V2 XT2 12 2 V1 XT1 SMBus PowerLAN Master Gateway Battery Controller bq78PL116 PowerLAN Communication Link bq76PL102 Dual-Cell Monitor Bq76PL102 Dual-Cell Monitor Example 12-cell configuration shown bq76PL102 Dual-Cell Monitor Bq76PL102 Dual-Cell Monitor Pack Protection Circuits and Fuse 1 RSENSE Figure 2. Example bq78PL116 System Implementation (12 Cells) Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 3 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com Table 1. ORDERING INFORMATION Product bq78PL116 (1) Cell Configuration (1) Package Package Designator 3 to 16 series cells QFN-48, 7-mm x 7-mm Temperature Range -40C to 85C RGZ Ordering Number Quantity, Transport Media bq78PL116RGZ T 250, tape and reel bq78PL116RGZ R 2500, tape and reel For configurations consisting of more than four series cells, additional bq76PL102 parts must be used. AVAILABLE OPTIONS V1 XT1 XT2 V2 VLDO2 V3 XT3 XT4 V4 SMBDAT SMBCLK 46 45 44 43 42 41 40 39 38 37 DSG 47 1 VSS CHG 48 bq78PL116 RGZ Package (Top View) 36 LED5/SEG5 2 35 LED4/SEG4 PRE 3 34 LED3/SEG3 EFCIC 4 33 LED2/SEG2 EFCID 5 32 LED1/SEG1 CCBAT 6 31 PSH/BP/TP Thermal Pad 24 RSTN P-LAN 25 23 12 P4N OSCO 22 NC P4S 26 21 11 P3N OSCI 20 NC P3S 27 19 10 SDI3 CSPACK 18 NC SDO2 28 17 9 P2N CSBAT 16 FIELD P2S 29 15 8 P1N VLDO1 14 SPROT SDI1 30 13 7 SDO0 CCPACK P0023-25 Figure 3. bq78PL116 Pinout bq78PL116 TERMINAL FUNCTIONS NAME NO. TYPE (1) DESCRIPTION CCBAT 6 IA Coulomb counter input (sense resistor), connect to battery negative CCPACK 7 IA Coulomb counter input (sense resistor), connect to pack negative CHG 1 O Charge MOSFET control (active-high, low opens MOSFET) CSBAT 9 IA Current sense input (safety), connect to battery negative CSPACK 10 IA Current sense input (safety), connect to pack negative DSG 2 O Discharge MOSFET control (active-high, low opens MOSFET) EFCIC 4 I External charge MOSFET control input EFCID 5 I External discharge MOSFET control input (1) 4 Types: I = Input, IA = Analog input, IO = Input/Output, O = Output, P = Power Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com bq78PL116 TERMINAL FUNCTIONS (continued) NAME NO. TYPE (1) DESCRIPTION FIELD 29 O EPD field segment LED1/SEG1 32 O LED1 - open-drain, active-low, LCD and EPD segment 1 LED2/SEG2 33 O LED2 - open-drain, active-low, LCD and EPD segment 2 LED3/SEG3 34 O LED3 - open-drain, active-low, LCD and EPD segment 3 LED4/SEG4 35 O LED4 - open-drain, active-low, LCD and EPD segment 4 LED5/SEG5 36 O LED5 - open-drain, active-low, LCD and EPD segment 5 N/C 26, 27 IO Connect 1-M resistor to VSS N/C 28 O No connect OSCI 11 I External oscillator input (no connect, internal oscillator used) OSCO 12 O External oscillator output (no connect, internal oscillator used) P1N 15 O Charge-balance gate drive, cell 1 north P2N 17 O Charge-balance gate drive, cell 2 north P2S 16 O Charge-balance gate drive, cell 2 south P3N 21 O Charge-balance gate drive, cell 3 north P3S 20 O Charge-balance gate drive, cell 3 south P4N 23 O Charge-balance gate drive, cell 4 north P4S 22 O Charge-balance gate drive, cell 4 south P-LAN 24 IO PowerLAN I/O to external bq76PL102 nodes PRE 3 O Precharge MOSFET control (active-high) PSH/BP/TP 31 IO Pushbutton detect for LED display, LCD backplane, EPD top plane and charge pump RSTN 25 I Device reset, active-low SDI1 14 I Connect to SDO0 via a capacitor SDI3 19 I Internal PowerLAN connection - connect to SDO2 through a 0.01-F capacitor SDO0 13 O Requires 100-k pullup resistor to VLDO1 SDO2 18 O Internal PowerLAN connection - connect to SDI3 through a 0.01-F capacitor SMBCLK 37 IO SMBus clock signal SMBDAT 38 IO SMBus data signal SPROT 30 O Secondary protection output, active-high (FUSE) V1 47 IA Cell-1 positive input V2 44 IA Cell-2 positive input V3 42 IA Cell-3 positive input V4 39 IA Cell-4 positive input VLDO1 8 P Internal LDO-1 output, bypass with 10-F capacitor to VSS VLDO2 43 P Internal LDO-2 output, bypass with 10-F capacitor to V2 VSS 48 IA Cell-1 negative input XT1 46 IA External temperature-sensor-1 input XT2 45 IA External temperature-sensor-2 input XT3 41 IA External temperature-sensor-3 input XT4 40 IA External temperature-sensor-4 input - - P Thermal pad. Connect to VSS Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 5 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) RANGE UNITS TA Operating free-air temperature (ambient) -40 to 85 C Tstg Storage temperature -65 to 150 C V4 Voltage range with respect to V3 -0.5 to 5.0 V V3 Voltage range with respect to V2 -0.5 to 5.0 V V2 Voltage range with respect to V1 -0.5 to 5.0 V V1 Voltage range with respect to VSS -0.5 to 5.0 V EFCIC, EFCID Voltage range with respect to VSS -0.5 to 5.0 V LED1/SEG1--LED5/SEG5 Voltage on I/O pin with respect to VSS -0.5 to 5.0 V SMBCLK, SMBDAT Voltage range with respect to VSS -0.5 to 6.0 V VLDO1 Voltage with respect to VSS 3.0 V VLDO2 Voltage range with respect to V2 3.0 V RSTN Voltage range with respect to VSS -0.5 to VLDO1 + 0.5 V FIELD, SPROT, PSH/BP/TP Voltage range with respect to VSS -0.5 to VLDO1 + 0.5 V CCBAT, CCPACK, CSBAT, CSPACK Voltage range with respect to VSS -0.5 to VLDO1 + 0.5 V CHG, DSG, PRE Voltage range with respect to VSS -0.5 to VLDO1 + 0.5 V OSCI, OSCO Voltage with respect to VSS -0.5 to VLDO1 + 0.5 V XT1, XT2 Voltage with respect to VSS -0.5 to VLDO1 + 0.5 V SDO0 Voltage range with respect to VSS -0.5 to VLDO1 + 0.5 V XT3, XT4 Voltage range with respect to V2 -0.5 to VLDO2 + 0.5 V SDO2, SDI3, P-LAN Voltage range with respect to V2 -0.5 to VLDO2 + 0.5 V SDO0, SDI1 Voltage range with respect to VSS -0.5 to V1 + 0.5 V P1N, P2S, P2N Voltage range with respect to VSS -0.5 to V1 + 0.5 V P3S, P3N, P4S, P4N Voltage range with respect to V2 -0.5 to V3 + 0.5 V PRE, CHG, DSG, SPROT, FIELD, PSH/BP/TP Current source/sink 20 mA LED1/SEG1-LED5/SEG5 Current source/sink 20 mA VLDO1, VLDO2 Current source/sink 20 mA ESD tolerance JEDEC, JESD22-A114 human-body model, R = 1500 , C = 100 pF 2 kV Lead temperature, sodlering Total time < 3 seconds 300 C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) VSUP Supply voltage--V1, V2, V3, V4 MIN NOM All cell voltages equal, four-cell operation 2.5 3.6 All cell voltages equal, three-cell operation (V3 = V4) 2.8 3.6 Minimum startup voltage--V1, V2, V3, V4 All cell voltages equal VIN Input cell voltage range--V(n+1) - V(n), n = 1, 2, 3, 4 CVLDO1 VLDO 1 capacitor--VLDO1 2.2 CVLDO2 VLDO 2 capacitor--VLDO2 2.2 CVn Cell-voltage capacitor--Vn 4.5 4.5 2.9 V 0 1 Submit Documentation Feedback UNIT V VStartup 6 MAX 4.5 V 10 47 F 10 47 F F (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com ELECTRICAL CHARACTERISTICS TA = -40C to 85C (unless otherwise noted) DC Characteristics PARAMETER TEST CONDITIONS IDD Operating-mode current (at V2) ISTBY Standby-mode current (at V2) SMBCLK = SMBDAT = VSS, IBAT = 0, cells = 3.6 V ISHIP Ship-mode current (at V2) SMBCLK = SMBDAT = VSS, IBAT = 0, cells = 3.6 V IECUV Extreme cell undervoltage shutdown current All cells < 2.7 V and any cell < ECUV set point SPROT, LEDEN, PSH/BP/TP(bq78PL116), FIELD(bq78PL116) IOL < 4 mA SPROT, LEDEN, PSH/BP/TP(bq78PL116), FIELD(bq78PL116) IOH < -4 mA VOL VOH (1) VIL SPROT, LEDEN, PSH/BP/TP(bq78PL116), FIELD(bq78PL116) VIH SPROT, LEDEN, PSH/BP/TP(bq78PL116), FIELD(bq78PL116) (1) MIN Acrtive mode, cells = 3.6 V TYP MAX UNIT 400 A 185 A 85 A 0 1 A 0.5 V VLDO1 - 0.1 V 0.25 VLDO1 V 0.75 VLDO1 V Does not apply to SMBus pins. Voltage-Measurement Characteristics TA = -40C to 85C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN Measurement range 2.75 MAX UNIT 4.5 V <1 Resolution 3 25C Accuracy (1) mV 7 mV 10 0C to 60C Measurement temperature coefficient (1) TYP 160 180 200 V/C TYP MAX UNIT Voltage measurement calibrated at factory Current-Sense Characteristics PARAMETER Measurement range TEST CONDITIONS MIN -0.112 Hardware gain = 9 (1) 0.1 V Measurement range (SENSE1) 10-m sense resistor -11.2 10 A Measurement range (SENSE2) 3-m sense resistor (hardware gain = 13) -25.8 25.8 A Measurement range (SENSE3) 1-m sense resistor (2) -112 100 A Input offset TA = 25C 50 V Offset drift TA = 0C to 60C 0.5 V/C Hardware gain = 9 10 V Resolution Full-scale error (3) Full-scale error drift (1) (2) (3) TA = 25C TA = 0C to 60C 0.1% 50 PPM/C Default setting Measurement range beyond 32,768 mA requires the use of an SBData IPScale Factor. After calibration. Accuracy is dependent on system calibration and temperature coefficient of sense resistor. Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 7 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 Coulomb-Count Characteristics (1) www.ti.com (2) PARAMETER TEST CONDITIONS MIN Resolution TYP Intergral nonlinearity 0.008% Snap-to-zero (deadband) 100 (3) (1) (2) (3) MAX 5 UNIT nVh V Shares common input with current-sense section (CCBAT, CCPACK) After calibration. Accuracy is dependent on system calibration and temperature. Corresponds to 10 mA with 10-m sense resistor Current-Sense (Safety) Characteristics (1) over free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN Minimum threshold setting Accuracy (1) Short-circuit detection V mV -20 20 mV -4 4 10 Overcurrent detection, charge and discharge Duration UNIT 42 Short-circuit detection Resolution MAX 0.312 25 Overcurrent detection, charge and discharge (1) TYP -0.312 Measurement range mV 1.25 Short-circuit detection 0.1 3.2 Overcurrent detection, charge and discharge 0.9 106 ms After calibration. Accuracy is dependent on system calibration and temperature coefficient of sense resistor. Internal Temperature-Sensor Characteristics (1) over free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN Resolution Accuracy (1) (1) TYP -30 Measurement range 0 to 85 MAX 85 UNIT C 0.1 C 2 C After calibration. Accuracy is dependent on system calibration. LDO Voltage Characteristics (1) over free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS Load = -200 A VLDO1 LDO1 operating voltage, referenced to VSS VLDO2 LDO2 operating voltage, referenced to V2 Load = -2 mA (1) MIN TYP MAX UNIT 2.425 2.5 2.575 V 2.425 2.5 2.575 V MIN TYP MAX UNIT After calibration. Accuracy is dependent on system calibration. External Temperature-Sensor Characteristics over free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS -40 Measurement range Resolution Accuracy (1) 25 2 0 to 85 2 8 30 50 C C 0.2 Source current (1) 90 C 70 A After calibration. Accuracy is dependent on system calibration. Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com SMBus Characteristics (1) over free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS VIL Input low voltage VIH Input high voltage VOL Output low voltage CL Capacitance, each I/O pin fSCL SCLK nominal clock frequency RPU (2) Pullup resistors for SCLK, SDATA (1) (2) MIN 350-A sink current TA = 25C TYP MAX UNIT 0 0.8 V 2.1 5.5 V 0 0.4 V 10 pF 100 kHz 10 100 VBUS 5 V nominal 13.3 45.3 VBUS 3 V nominal 2.4 6.8 k SMBus timing and signals meet the SMBus 2.0 specification requirements under normal operating conditions. All signals are measured with respect to PACK-negative. Pullups are typically implemented external to the battery pack and are selected to meet SMBus requirements. PowerLAN Characteristics (1) (2) (3) over free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP UNIT 100 pF Load capacitance VIH Input logic high VOH Output logic high VIL Input logic low VOL Output logic low tr(I) Input rise time SDI1, SDI3 500 ns tf(I) Input fall time SDI1, SDI3 500 ns tr(O) Output rise time SDO0, SDO2, P-LAN 30 50 ns tf(O) Output fall time SDO0, SDO2, P-LAN 30 50 ns (1) (2) (3) SDI1, SDI3, SDO0, SDO2, P-LAN MAX CL SDI1 0.8 VLDO1 SDI3 0.8 VLDO2 SDO0, SDO2 0.9 VLDO1 P-LAN 0.9 VLDO2 V V SDI1 0.2 VLDO1 SDI3 0.2 VLDO2 SDO0, SDO2 0.1 VLDO1 P-LAN 0.1 VLDO2 V V Values specified by design and are over the full input voltage range and the maximum load capacitance. The SDI and SDO pins are ac-coupled from the cell circuits downstream and upstream, respectively. The limits specified here are the voltage transitions which must occur within the SDI and SDO rise-and fall-time specifications. Coupling capacitor between PowerLAN pins is 1000 pF. This value is specified by design. Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 9 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com PowerPump Characteristics (1) over free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH High drive, P2S IOUT = -10 A VOL Low drive, P2S IOUT = 200 A VOH High drive, P1N, P2N IOUT = -200 A VOL Low drive, P1N, P2N IOUT = 10 A VOH High drive, P3S, P4S IOUT = -10 A VOL Low drive, P3S, P4S IOUT = 200 A VOH High drive, P3N, P4N IOUT = -200 A VOL Low drive, P1N, P2N IOUT = 10 A IOH Source current, P2S, P3S, P4S VOH = V1 - 0.8 V 250 A IOL Sink current, P1N, P2N, P3N, P4N VOH = V1 + 0.2 V -250 A tr Signal rise time CLoad = 300 pF 100 ns tf Signal FET fall time CLoad = 300 pF 100 ns fP Frequency D PWM duty cycle 10 V 0.1 V1 0.9 V1 V V 0.1 V1 0.9 V1 V V 0.1 V1 0.9 V1 V V 0.1 V1 204.8 P1N, P2N, P3N, P4N P2S, P3S, P4S (1) (2) 0.9 V1 V kHz 33% 67% (2) All parameters representative of a typical cell voltage of 3.6 V. Effective duty cycle is 33%. PxS pins are P-channel drives and MOSFET on-time is (1 - D). Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com RPRE + PACK+ PRE CHG DSG Level-Shift Circuits SDI1 SDO2 SDO0 Cell Balancing Circuits CELL 6 V2 V1 bq76PL102 SDI3 VLDO1 RSTN P-LAN CELL 5 SPROT V4 bq78PL116 PowerLAN Gateway Battery LED1-LED5 Management Controller Aux FET Control VLDO2 EFCIC V2 EFCID V1 SMBCLK CELL 1 XT1-XT4 SMBus CELL 2 V3 5 ESD Protection CELL 3 Cell Balancing Circuits CELL 4 SMBDAT CSPACK CCPACK CCBAT CSBAT TAB CRFI VSS Temperature Sensor (typ.) One of 4 external sensors shown - Typical six-cell configuration shown. Additional cells added via PowerLAN connection. Some components omitted for clarity. PACK- RSENSE S0342-04 Figure 4. bq78PL116 Simplified Example Circuit Diagram Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 11 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com FEATURE SET Primary (First-Level) Safety Features The bq78PL116 implements a breadth of system protection features which are easily configured by the customer. First-level protections work by controlling the MOSFET switches. These include: * Battery cell over/undervoltage protection * Pack over/undervoltage protection * Charge and discharge overcurrent protection * Short-circuit protection * External MOSFET control inputs (EFCIx) with programmable polarity * Up to four external temperature inputs for accurate cell and MOSFET monitoring * Watchdog timer protection * Brownout detection and protection against extreme pack undervoltage Secondary (Second-Level) Safety Features The bq78PL116 can detect more serious system faults and activate the SPROT pin, which can be used to open an in-line chemical fuse to permanently disable the pack. Secondary optional features include * Fully independent of first-level protections * SmartSafety algorithms for early detection of potential faults - Temperature abnormalities (extremes, rate of change) - Cell imbalance exceeds safety limits - Impedance rise due to cell or weld strap fault * MOSFET failure or loss of MOSFET control * Safety overvoltage, pack and cell * Safety overtemperature, limits for both charge and discharge * Safety overcurrent, charge and discharge * Failed current measurement, voltage measurement, or temperature measurement Charge Control Features * Meets SMBus 1.1 and Smart Battery System (SBS) Specification 1.1 requirements * Active cell balancing using patented PowerPump technology, which eliminates unrecoverable capacity loss due to normal cell imbalance * Simultaneous, synchronous measurement of all cell voltages in a pack * Simultaneous, synchronous measurement of pack current with cell voltages * Reports target charging current and/or voltage to an SBS Smart Charger * Reports the chemical state-of-charge for each cell and pack * Supports precharging and zero-volt charging with separate MOSFET control * Programmable, Chemistry-specific parameters * Fault reporting Gas Gauging * The bq78PL116 accurately reports battery cell and pack state-of-charge (SOC). No full charge/discharge cycle is required for accurate reporting. * State-of-charge is reported via SMBus and optional display. * 18-bit integrating delta-sigma ADC coulomb counter 12 Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com Display Types * The bq78PL116 drives a three- to five-segment LED display in response to a pushbutton (LEDEN) input signal. Each LED pin can sink up to 10 mA. * The bq78PL116 drives a three- to five-segment static liquid-crystal display. * The bq78PL116 drives a three- to five-segment electronic paper display. An external 15-V voltage source is required. E Ink Corporation supplies this type of display. The display type is selected via the parameter set. Lifetime Logging (Readable via SMBus) * Lifetime delivered ampere-hours * Last discharge average * Lifetime maximum power * Maximum/minimum temperature * Maximum/minimum pack voltage * Maximum/minimum cell voltage in a pack * Maximum charge and discharge currents Power Modes * Normal Mode: The bq78PL116 performs measurements and calculations, makes decisions, and updates internal data approximately once per second. All safety circuitry is fully functional in this mode. * Standby Mode: The bq78PL116 performs as in normal mode, but at a dramatically reduced rate to lower power consumption at times when the host computer is inactive or the battery system is not being used. All safety circuitry remains fully functional in this mode. * Ship Mode: The bq78PL116 disables (opens) all the protection MOSFETs, and continues to monitor temperature and voltage, but at a reduced measurement rate to dramatically lower power consumption. Environmental data is saved in flash as a part of the historical record. Safety circuitry is disabled in this mode. The device does not enter this power state as a part of normal operation; it is intended for use after factory programming and test. Entry occurs only after a unique SMBus command is issued. Exit occurs when the SMBus lines return to an active state. * Extreme Cell Undervoltage (ECUV) Shutdown Mode: In this mode, the bq78PL116 draws minimal current and the charge and discharge protection MOSFETs are disabled (opened). The precharge MOSFET remains enabled when a charge voltage is present. Safety circuitry is disabled in this mode. The device does not enter this mode as a part of normal operation; it enters this state during extreme cell undervoltage conditions (ECUV). The ECUV threshold is programmable between 2.5 V and 2.8 V for even series cell applications and 2.7 V to 2.8 V for odd series cell applications. STATE OVERCURRENT PROTECTION ENTRY CONDITION Normal operation as determined by firmware EXIT CONDITION Firmware directed to the following operating modes Active Fully active Standby Fully active No load current flowing for predetermined time Load activity Ship Not active Protected SMBus command SMBus becomes active Extreme cell undervoltage Not active (precharge enabled) Enabled when Vcell < ECUV Vcell charge above ECUV recovery threshold (2.9 V/cell typical) Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 13 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com OPERATION The bq78PL116 battery-management controller serves as a master controller for a Li-Ion battery system consisting of up to 16 cells in series. Any number of cells may be connected in parallel; other system or safety issues limit the number of parallel cells. The bq78PL116 provides extraordinarily precise state-of-charge gas gauging along with first- and second-level pack safety functions. Voltage and current measurements are performed synchronously and simultaneously for all cells in the system, allowing a level of precision not previously possible in battery management. Temperature is measured by up to four additional external temperature sensors. Coulomb counting is captured continuously by a dedicated 18-bit integrating delta-sigma ADC in the bq78PL116. The CPU in the bq78PL116 is also responsible for system data calculations and communicating parameters via the SMBus interface. PowerLAN Communication Link PowerLAN technology is Texas Instruments' patented serial network and protocol designed specifically for battery management in a multicell system environment. The PowerLAN link is used to initiate and report measurements of cell voltage and temperature, and control cell balancing. The bq78PL116 serves as the master controller of the PowerLAN link and can interface to multiple bq76PL102 dual-cell battery monitors, which measure and balance additional cells. The bq78PL116 monitors the first three or four cells, and bq76PL102s can be added to monitor more series cells. The PowerLAN link isolates voltages from adjacent bq76PL102 devices to permit high-voltage stack assembly without compromising precision and accuracy. The PowerLAN link is expandable to support up to 16 cells in series. Each bq76PL102 handles voltage and temperature measurements, as well as balancing for two cells. The PowerLAN link provides high ESD tolerance and high immunity to noise generated by nearby digital circuitry or switching currents. Each bq76PL102 has both a PowerLAN input and PowerLAN output: Received data is buffered and retransmitted, permitting high numbers of nodes without loss of signal fidelity. Signals are capacitor-coupled between nodes, providing dc isolation. Safety Unique in the battery-management controller market, the bq78PL116 simultaneously measures voltage and current using independent and highly accurate delta-sigma ADCs. This technique removes virtually all systemic noise from measurements, which are made during all modes of battery operation: charge, discharge, and rest. The bq78PL116 also directs all connected bq76PL102 dual-cell battery monitors to measure each cell voltage simultaneously with the bq78PL116 measurements. Battery impedance and self-discharge characteristics are thus measured with an unprecedented level of accuracy in real time. The bq78PL116 applies this precise information to SmartSafety algorithms to detect certain anomalies and conditions which may be indicative of internal cell faults, before they become serious problems. The bq78PL116 uses its enhanced measurement system to detect system faults including cell under- and overvoltage, cell under- and overtemperature, system overvoltage, and system overcurrent. First-level safety algorithms first attempt to open the MOSFET safety switches. If this fails, second-level safety algorithms activate the SPROT output, normally used to open a fuse and provide permanent, hard protection for the systems. External MOSFET control inputs with programmable polarity can also be used to operate the safety MOSFETs under control of user supplied circuitry. The bq78PL116 continuously monitors these inputs. If any MOSFET fails to open when commanded; the 2nd level safety algorithms also activate the SPROT output. All first- and second-level safety algorithms have fully programmable time delays to prevent false triggering. Cell Balancing Patented PowerPump cell balancing technology drastically increases the useful life of battery packs by eliminating the cycle life fade of multi-cell packs due to cell imbalance. PowerPump technology efficiently transfers charge from cell to cell, rather than simply bleeding off charging energy as heat as is typically done with resistive-bleed balancing circuits. Balancing is configurable and may be performed during any battery operational modes: charge, discharge, or rest. Compared to resistive bleed balancing, virtually no energy is lost as heat. The actual balance current is externally scalable and can range from 10 mA to 1 A (100 mA typical) depending on component selection and system or cell requirements. 14 Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com A variety of techniques, such as simple terminal voltage, terminal voltage corrected for impedance and temperature effects, or state-of-charge balancing, is easily implemented by the bq78PL116. By tracking the balancing required by individual cells, overall battery safety is enhanced, often allowing early detection of soft shorts or other cell failures. Balancing is achieved between all cells within the pack as dynamically determined by the bq78PL116. The bq78PL116 supports the following configurable cell-balancing features: * Turbo-pump mode. When enabled, this allows 60%-70% pump availability when there are no active safety events and current is not flowing. While in turbo-pump mode, temperature rate-of-rise features are not available. * Option to disable cell balancing during discharge * Option to disable cell balancing during charge * Test mode operation that allows for convenient production-line testing of PowerPump circuitry Outputs Charge Control The CHG and PRE outputs are ordinarily used to drive MOSFET transistors controlling charge to the cell stack. Charge or precharge mode is selected based on the present cell voltage compared to the user-definable cell precharge, undervoltage, and temperature thresholds. When below these limits, the PRE signal is active and the CHG signal is inactive. This turns on the precharge MOSFET and is used to charge a depleted system through a current-limiting series resistor. When all cell voltages are above the limit and the temperature is above the charge temperature minimum, then the CHG output also becomes active and enables the charge MOSFET to turn on, providing a high-current path between charger and battery cells. The CHG and PRE MOSFET control outputs are both disabled (low) when any cell reaches the safety cutoff limit or temperature threshold. During active charging modes (and above cell voltage thresholds), the discharge MOSFET is also enabled to avoid excessive heating of the body diode. Similarly, the charge MOSFET is active during discharge, provided current flow is in the correct direction and no safety violations are present. The CHG and PRE outputs are intended to drive buffer transistors acting as inverting level shifters. Discharge Control The DSG output operates similarly to control-system discharging. It is enabled (high) by default. If a cell voltage falls below a programmable threshold, or excessive current or other safety related fault is sensed, the DSG output is disabled (low) to prevent damage to the cells. All facets of safely charging and discharging the cell stack are controlled by user-definable parameters which provide precise control over MOSFET states. Both system and cell over- and undervoltage limits are provided, as well as programmable hysteresis to prevent oscillation. Temperature and current thresholds are also provided, each with independent timers to prevent nuisance activations. The DSG output is intended to drive a buffer transistor acting as an inverting level-shifter. Display The bq78PL116 shows state-of-charge indication on LED, static liquid crystal, and electronic paper displays or EPDs in a bar-graph-type format. The parameter set allows selection of display type and configuration. PSH/BP/TP is a multifunction pin. In LED display mode, PSH serves as an input that monitors for closure of a state-of-charge indicator (SOCi) push-button switch. In LCD mode, this pin is used to drive the LCD backplane. In EPD mode, this pin drives the top plane common signal of the display. In LED display mode, the signals LED1/SEG1-LED5/SEG5 are current-sinking outputs designed to drive low-current LEDs. In LCD and EPD modes, the LED1/SEG1-LED5/SEG5 pins drive the active segments through external buffer transistors. In EPD mode, the FIELD pin drives the display background field. Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 15 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com Electronic paper displays require an external power supply, typically 15 V, to power the display. In EPD, mode the bq78PL116 strobes the display outputs for a user- programmable period of milliseconds to drive an external voltage multiplier or charge pump to the required display supply voltage. The display segments are then updated in a manner that ensures the required 0-Vdc segment voltage offset is maintained and keeps the external power supply at its nominal voltage. Inputs Current Measurement Current is monitored by four separate ADCs. All use the same very low-value sense resistor, typically 10, 3, or 1 milliohms in series with the pack negative connection. CCBAT and CCPACK connections to the sense resistor use an R/C filter for noise reduction. (CSBAT and CSPACK are direct connections used for secondary safety). When configured to use a 1-milliohm sense resistor, the maximum available pack capacity increases to 327 Ah from 32.7 Ah. A 14-bit delta-sigma ADC is used to measure current flow accurately in both directions. The measurements are taken simultaneously and synchronously with all the cell voltage measurements, even those cells measured by bq76PL102 dual-cell battery monitors. Coulomb Counting A dedicated coulomb counter is used to measure charge flow with 18-bit precision in both directions by a calibrated, integrating delta-sigma ADC. This allows the bq78PL116 to keep very accurate state-of-charge (SOC) information and battery statistics. A small deadband is applied to further reduce noise effects. The coulomb counter is unique in that it continues to accumulate (integrate) current flow in either direction even as the rest of the internal microcontroller is placed in a very low power state, further lowering power consumption without compromising system accuracy. Safety Current Two additional ADCs are used to directly monitor for overcurrent or short-circuit current conditions, independently of the internal function. This provides a direct and rapid response to insure pack integrity and safe operation by opening the appropriate MOSFETs. These functions are implemented in hardware, and do not require firmware for functionality. Voltage Measurement Voltage measurement is performed by four independent delta-sigma ADCs which operate simultaneously and are triggered synchronously so that all voltages are read at precisely the same moment. The bq78PL116 coordinates the attached bq76PL102 dual-cell battery monitors so they also perform their cell voltage measurements in sync with the bq78PL116 voltage and current measurements. Voltage measurements are converted with better than 1 mV of resolution, providing superior accuracy. One-ADC-per-cell technology means that voltage is also measured simultaneously with current, permitting accurate, real-time cell impedance calculation during all operating conditions. This technique also provides greatly enhanced noise immunity and filtering of the input signal without signal loss. Temperature Measurement XT1-XT4 are dedicated temperature-sensor inputs. Each external sensor consists of a low-cost silicon diode (dual diode in one package is recommended) and capacitor combination. The bq78PL116 can report all four of these temperatures individually. The bq78PL116 firmware uses the internal temperature sensor of the device for board temperature measurements. EFCIx The external MOSFET control inputs are for user control of MOSFETs based on external circuitry and conditions. The polarity of the input signal is user-programmable. These pins can be used to force the protection MOSFETs to an OFF state. 16 Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com COMMUNICATIONS SMBus The bq78PL116 uses the industry-standard Smart Battery System's two-wire System Management Bus (SMBus) communications protocol for all external communication. SMBus version 1.1 is supported by the bq78PL116, and includes clock stretching, bus fault time-out detection, and optional packet error checking (PEC). For additional information, see the www.smbus.org and www.sbs-forum.org Web sites. Smart Battery Data (SBData) The bq78PL116 supports Smart Battery System's (SBS) Smart Battery Data Specification 1.1. See the SBS/SMBus site at www.sbs-forum.org for further information regarding these specifications. This SBS Data (SBData) specification defines read/write commands for accessing data commonly required in laptop computer applications. The commands are generic enough to be useful in most applications. The bq78PL116 provides a wealth of data beyond the standard set of SBData (0x00 - 0x23) through Extended SBData Commands. See the following table for a listing of the SBData commands and the default set of Extended SBData (0x3C - 0x58). SBData command locations 0x80 and 0x81 are used to implement some of the features unique to the bq78PL116. Refer to the bq78PL116 Technical Reference Manual Document for additional details on compliance to SBData and how to take advantage of the data and controls specific to bq78PL116. THERMAL PAD The large pad on the bottom of the package is square, located in the center, and is 5.3 0.05 mm per side. Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 17 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com SBS Standard Data Parameter List (Abridged) (1) Command Data Type Description 00 R/W word (unsigned) Manufacturer Access 01 R/W word (unsigned) Remaining Capacity Alarm Level 02 R/W word (unsigned) Remaining Time Alarm Level 03 R/W word (unsigned) Battery Mode 04 R/W word (unsigned) At Rate value used in AtRate calculations - NOT SUPPORTED 05 Read word (unsigned) At Rate Time to Full - NOT SUPPORTED 06 Read word (unsigned) At Rate Time to Empty - NOT SUPPORTED 07 Read word (Boolean) At Rate OK - NOT SUPPORTED 08 Read word (unsigned) Pack Temperature (maximum of all individual cells) 09 Read word (unsigned) Pack Voltage (sum of individual cell readings) 0A Read word (unsigned) Pack Current 0B Read word (unsigned) Average Pack Current 0C Read word (unsigned) Max Error 0D Read word (unsigned) Relative State of Charge 0E Read word (unsigned) Absolute State of Charge 0F Read word (unsigned) Remaining Pack Capacity 10 Read word (unsigned) Full Charge Capacity 11 Read word (unsigned) Run Time to Empty 12 Read word (unsigned) Average Time to Empty 13 Read word (unsigned) Average Time to Full 14 Read word (unsigned) Charging Current 15 Read word (unsigned) Charging Voltage 16 Read word (unsigned) Battery Status 17 Read word (unsigned) Cycle Count 18 Read word (unsigned) Design Capacity 19 Read word (unsigned) Design Voltage 1A Read word (unsigned) Specification Information 1B Read word (unsigned) Manufacture Date 1C Read word (unsigned) Serial Number 1D-1F Reserved 20 Read block (string) Pack Manufacturer Name (31 characters maximum) 21 Read block (string) Pack Device Name (31 characters maximum) 22 Read block (string) Pack Chemistry 23 Read block (string) Manufacturer Data 24-2E Reserved 2F R/W Block 30-3B Reserved 3C R/W word (unsigned) Optional Manufacturer Option 4 (Vcell 1) 3D R/W word (unsigned) Optional Manufacturer Option 3 (Vcell 2) 3E R/W word (unsigned) Optional Manufacturer Option 2 (Vcell 3) 3F R/W word (unsigned) Optional Manufacturer Option 1 (Vcell 4) 40 R/W word (unsigned) Extended Data (Vcell 5) 41 R/W word (unsigned) Extended Data (Vcell 6) 42 R/W word (unsigned) Extended Data (Vcell 7) 43 R/W word (unsigned) Extended Data (Vcell 8) 44 R/W word (unsigned) Extended Data (Vcell 9) (1) 18 Optional Manufacturer Function 5 Parameters 0x00-0x3F are compatible with the SBDATA specification. Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com Command Data Type Description 45 R/W word (unsigned) Extended Data (Vcell 10) 46 R/W word (unsigned) Extended Data (Vcell 11) 47 R/W word (unsigned) Extended Data (Vcell 12) 48 R/W word (unsigned) Extended Data (Vcell 13) 49 R/W word (unsigned) Extended Data (Vcell 14) 4A R/W word (unsigned) Extended Data (Vcell 15) 4B R/W word (unsigned) Extended Data (Vcell 16) 4C R/W word (unsigned) Extended Data (Temp 0 - Intenal) 4D R/W word (unsigned) Extended Data (Temp 1 - Extenal) 4E R/W word (unsigned) Extended Data (Temp 2 - Extenal) 4F R/W word (unsigned) Extended Data (Temp 3 - Extenal) 50 R/W word (unsigned) Extended Data (Temp 4 - Extenal) 51 R/W word (unsigned) Extended Data (Safety Status) 52 R/W word (unsigned) Extended Data (Permanent Fail Status) 53 R/W word (unsigned) Extended Data (Charge Status) 54 R/W word (unsigned) Extended Data (Lifetime Maximum Pack Voltage) 55 R/W word (unsigned) Extended Data (Lifetime Maximum Cell Voltage) 56 R/W word (unsigned) Extended Data (Lifetime Maximum Charge Current) 57 R/W word (unsigned) Extended Data (Lifetime Maximum Discharge Current) 58 R/W word (unsigned) Extended Data (Lifetime Maximum Temperature) 80 R/W word (unsigned) Extended Command (Device Status) 81 R/W word (unsigned) Extended Command (Device Command) Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 19 V3 D3 Q10-A Q10-B R5 R10 R21 C7 C21 C19 C17 R36 Q3 R18 R16 C24 C18 C11 C23 Q4 C20 1 48 12 11 47 8 15 16 17 20 21 22 23 44 43 42 39 VSS OSCO OSCI V1 VLDO1 P1N P2S P2N P3S P3N P4S P4N V2 VLDO2 V3 V4 U1 Z4 BATTERY- VSS R37 Q6 POWERPUMP CIRCUIT COMPONENT VALUES/TYPE WILL VARY BY APPLICATION. TYPICAL SHOWN. C1 D4 Q9-A R24 R17 R2 R7 3 L1 D1 C2 Q9-B R8 PRE-CHARGE RESISTOR (R9) VALUE WILL VARY BY APPLICATION. R6 R12 L2 D2 Q5 Q11 FOR 3 CELL APPLICATIONS (3SxP) XT4, P3N, P4S, P-LAN AND P4N ARE 'NO-CONNECT.' C4 C5 C6 VSS R35 R34 Z3 Q12 1 CELLS 3 Q1 F1 R38 R15 R25 CSD17307Q5A R29 R1 RSENSE C3 R27 bq78PL116 Q2 Z5 26 N/C 27 N/C 28 49 N/C tab XT1 XT2 XT3 XT4 RSTN 24 19 18 14 13 38 37 29 5 4 36 35 34 33 32 31 46 45 41 40 25 C12 C13 GND P-LAN SDI3 SDO2 SDI1 SDO0 SMBDAT SMBCLK FIELD EFCID EFCIC LED5/SEG5 LED4/SEG4 LED3/SEG3 LED2/SEG2 LED1/SEG1 PSH/BP/TP 2 R9 C25 R31 LED1 C8 R33 R22 R26 R28 PACK- LED5 LED3 LED2 LED4 SOCI R14 1 R3 PACK+ R19 R23 C14 C16 R4 R11 VSS T1 C9 Z2 Z1 R20 R13 R32 C15 T3 R30 T2 HOST EFCIC GND S001 SMBDAT SMBCLK EFCID SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 2 V0 V1 V2 BATTERY+ 2 DSG 3 PRE 1 CHG 30 SPROT Q7 CCPACK C22 CSBAT 9 CCBAT 6 Product Folder Link(s): bq78PL116 CSPACK Submit Documentation Feedback 7 20 10 C10 bq78PL116 www.ti.com REFERENCE SCHEMATICS Figure 5. Typical 3S Application Schematic (c) 2010-2011, Texas Instruments Incorporated bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com Table 2. Bill of Materials for 3S Application Qty Reference Value Description Size Manufacturer Mfg Part No. 5 C10 C12-13 C16 C22 0.1uF Capacitor SMT Ceramic X7R +/-10% 50V 5 C11 C18 C20 C23-24 10uF Capacitor SMT Ceramic X5R +/-10% 6.3V 603 Standard Standard 3 C1-3 0.01uF Capacitor SMT Ceramic X7R +/-10% 25V 603 Standard Standard 3 C4-6 22uF Capacitor SMT Ceramic Y5V +/-20% 10V 805 Standard Standard 4 C7 C17 C19 C21 3300pF Capacitor SMT Ceramic X7R +/-10% 50V 603 Standard Standard 5 C8-9 C14-15 C25 1000pF Capacitor SMT Ceramic X7R +/-10% 50V 603 Standard Standard 12 R1 R7-8 R11 R15 R19 R23 R25 R28 R36-38 1.0M Resistor SMT 1/10W +/-5% 603 Standard Standard 2 R17-18 30K Resistor SMT 1/10W +/-5% 603 Standard Standard 2 R2 R16 200K Resistor SMT 1/10W +/-5% 603 Standard Standard 2 R26 R35 100K Resistor SMT 1/10W +/-5% 603 Standard Standard 2 R27 R29 4.7K Resistor SMT 1/10W +/-5% 603 Standard Standard 11 R3 R6 R12-14 R20 R22 R30-33 100 Resistor SMT 1/10W +/-5% 603 Standard Standard 2 R4 R34 10K Resistor SMT 1/10W +/-5% 603 Standard Standard 4 R5 R10 R21 R24 20K Resistor SMT 1/10W +/-5% 603 Standard Standard 1 R9 100 Resistor SMT +/-5% 1W 603 Standard Standard 1 RSENSE 0.01 Resistor SMT +/-1% 1W +/-100ppm/C 2512 Standard Standard 4 D1-4 Vf=385mV Schottky Rectifier Diode 20V IFSM>2A SOD-123 Standard Standard 2 L1-2 4.7uH Inductor SMT Shielded Isat=2.0A 4.9mm x 4.9mm x 2.0mm Taiyo Yuden NRS5020T4R7MMG J 5 LED1-5 Green LED 603 Standard Standard 1 SOCI Momentary Pushbutton Standard Standard 3 T1-3 Dual Diode (Series Arrangement) SOT-23 Fairchild MMBD4148SE 4 Q1-4 N-Channel MOSFET 2.5Vgs rated, Vds>30V SOT-23 Infineon BSS138N 2 Q5-6 Vdg = -40V N-Channel JFET Idss>0.2mA, Vgs<-1.5V SOT-23 Fairchild MMBFJ201 1 Q7 9.7 mOhm MOSFET N-Channel RDSon SMT 30Vds SON 5mm x 6mm Texas Instruments CSD17307Q5A 2 Q9-10 6-TSOP Alpha & Omega AO6604 50mA MOSFET N/P Complementary Pair 603 Standard Standard Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 21 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com Table 2. Bill of Materials for 3S Application (continued) Qty 22 Reference Value Description Size Manufacturer Mfg Part No. 2 Q11-12 MOSFET P-Channel SMT -30VDS 1 U1 PowerLAN Master Gateway Battery Management Controller QFN48 Texas Instruments bq78PL116RGZR 3 Z1-2 Z5 5.6V Common Anode Zener Diode Pair 300mW SOT-23 Standard Standard 2 Z3-4 12V Zener Diode 500mW SOD-123 Diodes, Inc BZT52C12-13-F 12 Amp Chemical Fuse For 2-3 Cells In Series Sony SFH-1212A SOIC-8 Fairchild FDS6673 1 F1 4 BATTERY+ BATTERY- PACK+ PACK- 2 Pin Connector Standard Standard 1 CELLS 4 Pin Connector Standard Standard 1 HOST 5 Pin Connector Standard Standard Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 V0 V1 V2 V3 V4 J1 V4 V5 C4 C5 C6 C33 R6 R12 L2 R39 L3 R42 L4 L1 C1 D1 C2 D3 D4 D2 D5 C30 D6 D7 C32 D8 Z3 Q10-A Q10-B Q9-A Q9-B Q8-A Q8-B Q13-A Q13-B R5 R10 R21 R24 R40 R41 R43 R44 R8 Q5 C7 C21 C19 C17 C28 C27 C31 C29 R17 R2 Q12 P5S VSS R36 Q3 R18 R16 C24 C18 C11 C26 R7 Submit Documentation Feedback C20 48 12 11 47 8 15 16 17 20 21 22 23 44 43 42 39 VSS OSCO OSCI V1 VLDO1 P1N P2S P2N P3S P3N P4S P4N V2 VLDO2 V3 V4 U1 Z4 BATTERY- VSS R37 Q6 C23 Q4 Q11 R38 Q7 R15 R25 R29 R1 RSENSE C3 R27 bq78PL116 Q2 Z5 30 SPROT 3 PRE 1 CHG 2 DSG 26 N/C 27 N/C 28 49 N/C tab BATTERY+ C22 CSBAT 9 CCBAT 6 Product Folder Link(s): bq78PL116 XT1 XT2 XT3 XT4 RSTN 24 19 18 14 13 38 37 29 5 4 36 35 34 33 32 31 46 45 41 40 25 R3 C12 C13 GND P-LAN SDI3 SDO2 SDI1 SDO0 SMBDAT SMBCLK FIELD EFCID EFCIC LED5/SEG5 LED4/SEG4 LED3/SEG3 LED2/SEG2 LED1/SEG1 PSH/BP/TP R9 CSPACK (c) 2010-2011, Texas Instruments Incorporated CCPACK 7 C25 R31 R14 LED1 Q1 R28 PACK- PLAN C8 R33 R22 LED5 LED3 LED2 LED4 SOCI R26 R4 R35 R34 R19 C16 R23 C14 C96 PACK+ R11 VSS T1 Z2 Z1 R20 R13 R32 C15 T4 C9 R30 T2 T3 HOST S002a GND SMBDAT SMBCLK EFCID EFCIC FUSE www.ti.com 10 C10 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 Figure 6. Typical 16S Application Circuit - bq78PL116 and FETs (Sheet 1 of 4) 23 Product Folder Link(s): bq78PL116 V5 V6 V7 V8 J2 Cells 5 to 8 V4 V5 V8 C37 C45 C66 C38 R72 L5 R65 L6 R61 L7 R53 L8 C35 C39 C64 C63 D17 D18 D19 D20 D9 D10 D11 D12 R73 Q14-A Q14-B R66 Q16-A Q16-B R62 Q18-A Q18-B R54 Q19-A Q19-B R71 R63 R55 R52 C36 C34 C44 C43 C65 C52 C71 C70 P9S P5S C49 C50 C75 C76 U3 V2 V1 V2 15 V1 8 PUMP2N 7 PUMP2S 6 PUMP1N 5 PUMP1S 12 BQ76PL102 U2 15 8 PUMP2N 7 PUMP2S 6 PUMP1N 5 PUMP1S 12 BQ76PL102 14 XT1 13 XT2 VLDO VPP C74 VLDO VPP 2 C48 16 9 SDO 4 SDI 14 XT1 13 XT2 2 16 9 SDO 4 SDI VSS TAB N/C N/C N/C 1 17 11 10 3 VSS TAB N/C N/C N/C Submit Documentation Feedback 1 17 11 10 3 24 SDO5 C46 C73 S002b PLAN V9 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com Figure 7. Typical 16S Application Circuit - bq76PL102 for Cells 5-8 (Sheet 2 of 4) (c) 2010-2011, Texas Instruments Incorporated (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 V9 V10 V11 V12 J3 Cells 9 to 12 V8 V9 V12 C42 C54 C61 C47 R45 L9 R48 L10 R51 L11 R58 L12 C78 C79 C80 C81 D13 D14 D15 D16 D21 D22 D23 R46 Q15-A Q15-B R49 Q17-A Q17-B R56 Q20-A Q20-B R59 Q21-A Q21-B R47 R50 R57 R60 C41 C40 C53 C51 C60 C59 C67 C62 P13S P9S C57 C58 C72 C77 U5 V2 V1 V2 15 V1 8 PUMP2N 7 PUMP2S 6 PUMP1N 5 PUMP1S 12 BQ76PL102 U4 15 8 PUMP2N 7 PUMP2S 6 PUMP1N 5 PUMP1S 12 BQ76PL102 14 XT1 13 XT2 VLDO VPP C69 VLDO VPP 2 C56 16 9 SDO 4 SDI 14 XT1 13 XT2 2 16 9 SDO 4 SDI SDO7 C55 C68 S002c SDO5 D24 VSS TAB N/C N/C N/C 1 17 11 10 3 VSS TAB N/C N/C N/C www.ti.com 1 17 11 10 3 V13 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 Figure 8. Typical 16S Application Circuit - bq76PL102 for Cells 9-12 (Sheet 3 of 4) Submit Documentation Feedback 25 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 C90 2 16 VPP VLDO 9 SDO 4 SDI 14 XT1 13 XT2 V1 C91 15 V2 8 PUMP2N 7 PUMP2S 6 PUMP1N 5 PUMP1S U6 12 C83 C82 R67 D25 C102 V13 V15 V14 V16 J4 Cells 13 to 16 V13 V12 C84 C88 C95 C85 R64 L13 R69 L14 Q22-A D26 D27 Q22-B R70 Q23-A C103 D28 Q23-B R76 D29 L15 R75 C104 D30 Q24-A Q24-B R74 R68 C87 C86 C94 R77 C93 P13S C92 C101 C100 BQ76PL102 2 16 VPP 9 SDO 4 SDI VLDO V1 15 V2 VSS TAB N/C N/C N/C 8 PUMP2N 7 PUMP2S 6 PUMP1N 5 PUMP1S 1 17 11 10 3 U7 VSS TAB N/C N/C N/C 12 1 17 11 10 3 14 XT1 13 XT2 C99 SDO7 BQ76PL102 S002d C89 C98 www.ti.com Figure 9. Typical 16S Application Circuit - bq76PL102 for Cells 13-16 (Sheet 4 of 4) Table 3. Bill of Materials for 16S Application Qty 26 Reference Value Description Size Manufacturer Mfg Part No. 6 U2-7 QFN-16 PowerLAN Dual Cell Monitor 1 U1 QFN-48 PowerLAN Master Gateway Battery Management Controller QFN48 Texas Instruments bq78PL116RGZR 24 C11 C18 C20 C23-24 C26 C48-50 C56-58 10uF C69 C72 C74-77 C90-92 C99-101 Capacitor SMT Ceramic X5R +/-10% 6.3V 603 Standard Standard 16 C1-3 C30 C32 C35 C39 C63-64 C78-81 C102-104 0.01uF Capacitor SMT Ceramic X7R +/-10% 25V 603 Standard Standard 12 C8-9 C14-15 C25 C46 C55 C68 C73 C89 C96 C98 1000pF Capacitor SMT Ceramic X7R +/-10% 50V 603 Standard Standard 5 C10 C12-13 C16 C22 0.1uF Capacitor SMT Ceramic X7R +/-10% 50V 603 Standard Standard QFN16 Texas Instruments bq76PL102RGTT Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com Table 3. Bill of Materials for 16S Application (continued) Qty Reference Value Description Size Manufacturer Mfg Part No. 30 C7 C17 C19 C21 C27-29 C31 C34 C36 C40-41 C43-44 C51-53 C59-60 C62 3300pF C65 C67 C70-71 C82-83 C86-87 C93-94 Capacitor SMT Ceramic X7R +/-10% 50V 603 Standard Standard 16 C4-6 C33 C37-38 C42 C45 C47 C54 22uF C61 C66 C84-85 C88 C95 Capacitor Ceramic SMT Y5V +/-20% 10V 805 Standard Standard 24 R3 R6 R12-14 R20 R22 R30-33 R39 R42 R45 R48 R51 R53 100 R58 R61 R64-65 R69 R72 R75 Resistor SMT 1/10W +/-5% 603 Standard Standard 2 R4 R34 10K Resistor SMT 1/10W +/-5% 603 Standard Standard 2 R26 R35 100K Resistor SMT 1/10W +/-5% 603 Standard Standard 12 R1 R7-8 R11 R15 R19 R23 R25 R28 R36- 38 1.0M Resistor SMT 1/10W +/-5% 603 Standard Standard 30 R5 R10 R21 R24 R40-41 R43-44 R46-47 R49-50 R52 R54-57 R59-60 R62-63 R66- 68 R70-71 R73-74 R76-77 20K Resistor SMT 1/10W +/-5% 603 Standard Standard 2 R2 R16 200K Resistor SMT 1/10W +/-5% 603 Standard Standard 2 R17-18 30K Resistor SMT 1/10W +/-5% 603 Standard Standard 1 R9 3K Resistor SMT +/-5% 1W 603 Standard Standard 2 R27 R29 4.7K Resistor SMT 1/10W +/-5% 603 Standard Standard 1 RSENSE 0.01 Resistor SMT +/-1% 1W +/-100ppm/C 2512 Standard Standard 15 L1-15 4.7uH Inductor SMD Shielded Isat=2.0A 4.9mm x 4.9mm x 2.0mm Taiyo Yuden NRS5020T4R7MMG J 4 Q1-4 Vds > 80V N-Channel MOSFET, 2.5Vgs Rated SOT-23 Standard Standard 2 Q5-6 Idss=0.2 to 1.0mA General Purpose N-Channel JFET Amplifier SOT-23 Fairchild MMBFJ201 1 Q7 100 Vds MOSFET N-Channel 20Vgs D2PAK Standard Standard 15 Q8-10 Q13-24 +/-8Vgs MOSFET N/P Complementary Pair 6-TSOP Alpha & Omega AO6604 2 Q11-12 -100 Vds MOSFET P-Channel 20Vgs D2PAK Standard Standard 30 D1-30 500mA Schottky Rectifier Diode 20V SOD-123 Fairchild MBR0520L 4 T1-4 Dual Diode SOT-23 Fairchild MMBD4148SE Standard Standard 5 LED1-5 Green/25 mA Green Diffused LED 603 1.6mm x 0.8mm SMT Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 27 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com Table 3. Bill of Materials for 16S Application (continued) Qty 28 Reference Value Description SOT-23 Standard Standard SOD-123 Standard Standard Standard Standard 2 Z1 Z2 5.6VDC Common Anode Zener Diode Pair 300mW 3 Z3-5 500mW Zener Diode 500mW 12V 1 SOCI 50mA Tactile Momentary Pushbutton Thru-Hole 1 HOST 1 J1 3 J2-4 4 BATTERY+ BATTERY- PACK+ PACK- Size Manufacturer Mfg Part No. Header 6 Position Standard Standard 1.0 Amp Header 5 Position Standard Standard 3.0A Header 4 Position Standard Standard 30 Amps Header 2 Position Standard Standard Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com 100 1F 25V 1F 25V 1 1F 25V 1 2 3 3 BAT54STA 1 2 3 BAT54STA 1F 25V 2 BAT54STA 1F 25V 4.7F 25V 1M 1M 1M 1M 1M 1M 1M TPC FIELD SEG1 SEG2 SEG3 SEG4 SEG5 NTS4001NT1G bq78PL116 39 V4 PSH/BP/TP FIELD LED1/SEG1 31 1M NTS4001NT1G 1M NTS4001NT1G 29 LED2/SEG2 VLDO1 TAB Vss 49 48 NTS4001NT1G NTS4001NT1G 35 1M LED5/SEG5 NTS4001NT1G 34 1M LED4/SEG4 E-Ink SDC3 PET 5-Bar, Part Number: 520-1285 33 1M LED3/SEG3 XF2L-0735-1/ OMRON/ZIFF 32 1M 1 2 3 4 5 6 7 NTS4001NT1G 36 8 S003 NOTE: For reference only. Actual display used may require different operating voltage. Consult with display vendor. Figure 10. Reference Schematic (Electronic-Paper Display Connections) Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 29 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com 1M 1M 1M 1M 1M 1M 44 V2 PSH/BP/TP LED1/SEG1 LED2/SEG2 31 1M NTS4001NT1G 1M NTS4001NT1G VLDO1 TAB Vss 49 48 BP S1 S2 S3 S4 S5 S8 NTS4001NT1G 34 NTS4001NT1G 35 1M LED5/SEG5 S7 33 1M LED4/SEG5 S6 9 32 1M LED3/SEG3 8 EXCEL 8-Segment Display 0408 To +ve of Cell 2 1 2 3 4 5 6 NTS4001NT1G bq78PL116 7 NTS4001NT1G 36 8 S004 NOTE: For reference only. Actual display used may require different operating voltage. Consult with display vendor. Figure 11. Reference Schematic (LCD Connections) 30 Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 bq78PL116 SLUSAB8B - OCTOBER 2010 - REVISED FEBRUARY 2011 www.ti.com REVISION HISTORY Changes from Revision A (October 2010) to Revision B Page * Revised PowerLAN Characteristics table ............................................................................................................................. 9 * Changed Ah values in Current Measurement paragraph ................................................................................................... 16 Submit Documentation Feedback (c) 2010-2011, Texas Instruments Incorporated Product Folder Link(s): bq78PL116 31 PACKAGE OPTION ADDENDUM www.ti.com 13-Jun-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) BQ78PL116RGZR NRND VQFN RGZ 48 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR BQ78PL116RGZT NRND VQFN RGZ 48 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR Samples (Requires Login) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. 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