MS2421 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * * GOLD METALLIZATION Pout = 300W MINIMUM Gp = 6.3 dB MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED COMMON EMITTER DESCRIPTION: The MS2421 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN. The MS2421 is designed with internal input/output matching resulting in improved broadband performance and low thermal resistance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol PDISS VCES VCBO VEBO TJ IC T STG Parameter Power Dissipation Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Junction Temperature Device Current Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case Value 875 65 65 3.5 200 22 -65 to +200 0.20 Unit W V V V C A C C/W MSCXXXX.PDF 06-03-99 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2421 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25 25 C) STATIC Symbol BVCBO BVEBO ICES HFE Test Conditions IC = 10 mA IE = 5.0 mA VCE = 50 V VCE = 5 V DYNAMIC Symbol POUT GP nC Condition s IE = 0 mA IC = 0 mA Max. Unit Min. Value Typ. Max. Unit 65 3.5 --10 IC= 500mA Test Conditions f =1025 - 1150 MHz PIN = 70W VCE =50V 6.3 --- --- dB f =1025 - 1150 MHz PIN = 70W VCE =50V 35 --- --- % ZIN(W) ZCL(W) 960 MHz 2.6 + j6.0 2.5 - j6.0 1090 MHz 7.4 + j4.4 2.4 - j6.2 1215 MHz 4.3 + j1.1 2.5 - j4.9 Vce = 50V MSCXXXX.PDF 06-03-99 --- V V mA mA VCE =50V FREQ --- ----25 200 PIN = 70W Pulse Width = 10 m s Duty Cycle = 1% 300 --------- f =1025 - 1150 MHz IMPEDANCE DATA Pin = 70W Value Typ. Min. W MS2421 PACKAGE MECHANICAL DATA MSCXXXX.PDF 06-03-99