NXP Semiconductors Technical Data Document Number: MRF300AN Rev. 1, 05/2019 RF Power LDMOS Transistors MRF300AN MRF300BN High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Pout (W) Gps (dB) D (%) 13.56 320 CW 28.1 79.7 27 340 CW 27.3 80.6 40.68 (1) 330 CW 28.2 79.0 320 CW 27.3 73.2 81.36 320 CW 27.3 73.1 144 315 CW 22.9 72.4 330 Peak 20.4 75.5 Signal Type CW 50 230 (2) Pulse (100 sec, 20% Duty Cycle) 1.8-250 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS G S D TO--247--3 MRF300AN Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (W) Test Voltage 40.68 Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 2 Peak (3 dB Overdrive) 50 No Device Degradation 230 Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 6 Peak (3 dB Overdrive) 50 No Device Degradation Result 1. Measured in 40.68 MHz reference circuit (page 5). 2. Measured in 230 MHz fixture (page 10). Features Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration Characterized from 30 to 50 V G Suitable for linear application Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Typical Applications Industrial, scientific, medical (ISM) - Laser generation - Plasma etching - Particle accelerators - MRI and other medical applications - Industrial heating, welding and drying systems Radio and VHF TV broadcast HF and VHF communications Switch mode power supplies 2018-2019 NXP B.V. RF Device Data NXP Semiconductors D D S G TO--247--3 MRF300BN S Backside Note: Exposed backside of the package also serves as a source terminal for the transistor. MRF300AN MRF300BN 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS -0.5, +133 Vdc Gate--Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 50 Vdc Storage Temperature Range Tstg - 65 to +150 C Case Operating Temperature Range TC -40 to +150 C Operating Junction Temperature Range (1,2) TJ -40 to +175 C Total Device Dissipation @ TC = 25C Derate above 25C PD 272 1.82 W W/C Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 76C, 300 W CW, 50 Vdc, IDQ = 50 mA, 40.68 MHz RJC 0.55 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 74C, 300 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 100 mA, 230 MHz ZJC 0.13 C/W Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) 2, passes 2500 V Charge Device Model (per JS--002--2014) C3, passes 1200 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 0 225 (4) C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS -- -- 1 Adc 133 -- -- Vdc IDSS -- -- 10 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 840 Adc) VGS(th) 1.7 2.2 2.7 Vdc Gate Quiescent Voltage (VDS = 50 Vdc, ID = 100 mAdc) VGS(Q) -- 2.5 -- Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.16 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 30 Adc) gfs -- 28 -- S Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 mAdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) V(BR)DSS On Characteristics 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com/RF/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Peak temperature during reflow process must not exceed 225C. (continued) MRF300AN MRF300BN 2 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 2.31 -- pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 104 -- pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss -- 403 -- pF Dynamic Characteristics Typical Performance - 230 MHz (In NXP 230 MHz Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 3 W, f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Common--Source Amplifier Output Power Pout -- 330 -- W Drain Efficiency D -- 75.5 -- % Input Return Loss IRL -- -21 -- dB Table 6. Load Mismatch/Ruggedness (In NXP 230 MHz Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) 230 Signal Type VSWR Pin (W) Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 6 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation Table 7. Ordering Information Device Shipping Information MRF300AN MRF300BN MPQ = 240 devices (30 devices per tube, 8 tubes per box) Package TO--247--3L (Pin 1: Gate, Pin 2: Source, Pin 3: Drain) TO--247--3L (Pin 1: Drain, Pin 2: Source, Pin 3: Gate) MRF300AN MRF300BN RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 1000 108 Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc VDD = 50 Vdc ID = 6.2 Amps 100 107 Coss MTTF (HOURS) C, CAPACITANCE (pF) Ciss 10 1 10 8.7 Amps 105 Crss 0 7.8 Amps 106 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 1. Capacitance versus Drain--Source Voltage 104 90 110 130 170 150 190 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com/RF/calculators. Figure 2. MTTF versus Junction Temperature -- CW MRF300AN MRF300BN 4 RF Device Data NXP Semiconductors 40.68 MHz REFERENCE CIRCUIT (MRF300AN) Table 8. 40.68 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pin = 0.5 W, CW Frequency (MHz) Gps (dB) D (%) Pout (W) 40.68 28.2 79.0 330 MRF300AN MRF300BN RF Device Data NXP Semiconductors 5 40.68 MHz REFERENCE CIRCUIT (MRF300AN) -- 2 3 (5.1 cm 7.6 cm) R6 R5 JP1 R7 R8 D108224 D1 J1 J2 R9 C25 C26 C34 C27 C17 C12 C33 C13 B1 L6 L3 C29 C30 J3 C1 C18 R1 C19 C3 R2 Q1 L5 C20 L1 C21 R3 C22 L4 Rev. 0 Note: Component numbers C2, C4-C11, C14-C16, C23, C24, C28, C31, C32, R4 and L2 are not used. aaa--030512 Figure 3. MRF300AN 40.68 MHz Reference Circuit Component Layout MRF300AN MRF300BN 6 RF Device Data NXP Semiconductors 40.68 MHz REFERENCE CIRCUIT (MRF300AN) Table 9. MRF300AN Reference Circuit Component Designations and Values -- 40.68 MHz Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair-Rite C1, C13, C17 22,000 pF Chip Capacitor ATC200B223KT50XT ATC C3 200 pF Chip Capacitor GQM2195C2A201GB12D Murata C12 1 F Chip Capacitor GRM31CR72A105KA01L Murata C18, C19, C20 68 pF Chip Capacitor ATC100B680JT500XT ATC C21 200 pF Chip Capacitor ATC100B201JT300XT ATC C22 220 pF Chip Capacitor ATC100B221JT200XT ATC C25 0.1 F Chip Capacitor GRM32NR72A104KA01B Murata C26 10 F Chip Capacitor GRM32ER61H106KA12L Murata C27 56 pF Chip Capacitor ATC100B560CT500XT ATC C29 75 pF Chip Capacitor ATC100B750JT500XT ATC C30 91 pF Chip Capacitor ATC100B910JT500XT ATC C33 5100 pF Chip Capacitor ATC700B512KT50XT ATC C34 220 F, 63 V Electrolytic Capacitor EEU-FC1J221 Panasonic D1 8.2 V Zener Diode SMAJ4738A-TP Micro Commercial Components J1 Right Angle Breakaway Headers (2 Pins) 9-146305-0 TE Connectivity J2, J3 Jumper Copper Foil JP1 Shunt (J1) 382811-8 TE Connectivity L1 120 nH Chip Inductor 1008CS-121XJLB Coilcraft L3 117 nH Chip Inductor 1212VS-111MEB Coilcraft L4 33 nH Chip Inductor 2014VS-33NMEB Coilcraft L5 108 nH Chip Inductor 2014VS-111MEB Coilcraft L6 155 nH Chip Inductor 2014VS-151MEB Coilcraft Q1 RF Power LDMOS Transistor MRF300AN NXP R1, R3 0 , 1/4 W Chip Resistor CRCW12060000Z0EA Vishay R2 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay R5 12 k, 1/4 W Chip Resistor CRCW120612K0FKEA Vishay R6 27 k, 1/4 W Chip Resistor CRCW120627K0FKEA Vishay R7, R8 20 k, 1/4 W Chip Resistor CRCW120620K0FKEA Vishay R9 5.0 k Multi--turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns PCB FR4 0.087, r = 4.8, 2 oz. Copper D108224 MTL MRF300AN MRF300BN RF Device Data NXP Semiconductors 7 TYPICAL CHARACTERISTICS -- 40.68 MHz REFERENCE CIRCUIT (MRF300AN) 400 VDD = 50 Vdc, f = 40.68 MHz, CW 350 300 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 400 Pin = 0.5 W 250 Pin = 0.25 W 200 150 100 50 0 350 VDD = 50 Vdc, IDQ = 100 mA, f = 40.68 MHz, CW 300 250 200 150 100 50 0 0.5 1 2 1.5 3 2.5 3.5 0 0 4 0.1 0.2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Pin, INPUT POWER (WATTS) Figure 4. CW Output Power versus Gate--Source Voltage at a Constant Input Power f (MHz) P1dB (W) P3dB (W) 40.68 250 340 Figure 5. CW Output Power versus Input Power 35 100 VDD = 50 Vdc, IDQ = 100 mA, f = 40.68 MHz, CW 90 80 Gps, POWER GAIN (dB) 33 32 70 Gps 31 60 50 30 29 40 D 28 30 27 20 26 10 25 0 50 100 150 200 250 300 350 D, DRAIN EFFICIENCY (%) 34 0 400 Pout, OUTPUT POWER (WATTS) Figure 6. Power Gain and Drain Efficiency versus CW Output Power MRF300AN MRF300BN 8 RF Device Data NXP Semiconductors 40.68 MHz REFERENCE CIRCUIT (MRF300AN) f MHz Zsource Zload 40.68 7.83 + j13.51 5.34 + j1.03 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50 Zload Figure 7. Series Equivalent Source and Load Impedance -- 40.68 MHz MRF300AN MRF300BN RF Device Data NXP Semiconductors 9 230 MHz FIXTURE (MRF300AN) -- 4 5 (10.2 cm 12.7 cm) C10 C1 C2 C9 C4 C3 C5 cut out area B1 C12 C11 C13 L2 MRF300AN Rev. 0 D110614 R1 C6 C16 C15 L1 C17 C14 C8 C7 aaa--030511 Figure 8. MRF300AN Fixture Component Layout -- 230 MHz Table 10. MRF300AN Fixture Component Designations and Values -- 230 MHz Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair-Rite C1 47 F, 16 V Tantalum Capacitor T491D476K016AT Kemet C2 2.2 F Chip Capacitor C3225X7R1H225K250AB TDK C3 10 nF Chip Capacitor C1210C103J5GACTU Kemet C4 0.1 F Chip Capacitor GRM319R72A104KA01D Murata C5, C9 1000 pF Chip Capacitor ATC800B102JT50XT ATC C6, C7 18 pF Chip Capacitor ATC100B180JT500XT ATC C8, C14 56 pF Chip Capacitor ATC100B560CT500XT ATC C10 0.1 F Chip Capacitor C1812104K1RACTU Kemet C11 2.2 F Chip Capacitor C3225X7R2A225K230AB TDK C12 2.2 F Chip Capacitor HMK432B7225KM-T Taiyo Yuden C13 220 F, 100 V Electrolytic Capacitor MCGPR100V227M16X26 Multicomp C15 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C16 24 pF Chip Capacitor ATC100B240JT500XT ATC C17 470 pF Chip Capacitor ATC800B471JT200XT ATC L1 47 nH Chip Inductor 1812SMS-47NJLC Coilcraft L2 146 nH Chip Inductor 1010VS-141NME Coilcraft R1 470 1/4 W Chip Resistor CRCW1206470RFKEA Vishay PCB Rogers AD255C 0.030, r = 2.55, 2 oz. Copper D110614 MTL MRF300AN MRF300BN 10 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS -- 230 MHz, TC = 25_C FIXTURE (MRF300AN) Pout, OUTPUT POWER (WATTS) PEAK 400 VDD = 50 Vdc, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 350 300 Pin = 3.0 W 250 200 Pin = 1.5 W 150 100 50 0 0 0.5 1.5 1 2 2.5 3 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 9. Output Power versus Gate--Source Voltage at a Constant Input Power 53 VDD = 50 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle Gps IDQ = 900 mA 22 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) PEAK 24 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 55 51 49 47 45 43 41 600 mA 300 mA 20 100 mA 900 mA 18 24 27 30 33 36 14 39 100 mA 10 Pin, INPUT POWER (dBm) PEAK f (MHz) P1dB (W) P3dB (W) 230 334 382 20 300 mA 5 40 600 mA D 39 21 80 60 16 37 18 100 D, DRAIN EFFICIENCY (%) 57 0 500 100 Pout, OUTPUT POWER (WATTS) PEAK Figure 11. Power Gain and Drain Efficiency versus Output Power and Quiescent Current Figure 10. Output Power versus Input Power Gps, POWER GAIN (dB) 22 Gps 21 80 24 70 22 60 20 50 D 19 18 40 30 17 20 16 10 500 50 5 Gps, POWER GAIN (dB) VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle D, DRAIN EFFICIENCY (%) 23 IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 20 18 50 V 45 V 16 40 V 35 V 14 VDD = 30 V 12 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 12. Power Gain and Drain Efficiency versus Output Power Figure 13. Power Gain versus Output Power and Drain--Source Voltage 450 MRF300AN MRF300BN RF Device Data NXP Semiconductors 11 230 MHz FIXTURE (MRF300AN) f MHz Zsource Zload 230 1.77 + j1.90 2.50 + j0.78 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Zsource Output Matching Network 50 Zload Figure 14. Series Equivalent Source and Load Impedance -- 230 MHz MRF300AN MRF300BN 12 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS MRF300AN MRF300BN RF Device Data NXP Semiconductors 13 MRF300AN MRF300BN 14 RF Device Data NXP Semiconductors MRF300AN MRF300BN RF Device Data NXP Semiconductors 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2018 Initial release of data sheet 1 Jan. 2019 Typical Performance table: added 13.56, 50 and 144 MHz reference circuits and updated 81.36 MHz data, p. 1 Package photos: added backside photo, p. 1 Table 4, Moisture Sensitivity Level: added footnote "Peak temperature during reflow process must not exceed 225C." Updated table, p. 2. Fig. 1, Capacitance versus Drain--Source Voltage: removed note as not applicable to graph, p. 4 Table 8, 40.68 MHz Performance table; Fig. 5, CW Output Power versus Input Power; and Fig. 6, Power Gain and Drain Efficiency versus CW Output Power: corrected bias value to 100 mA to reflect actual measurement used in data sheet, pp. 5, 8 Package Outline Drawing: TO--247--3 package outline updated to Rev. A, pp. 13-15 General updates made to align data sheet to current standard MRF300AN MRF300BN 16 RF Device Data NXP Semiconductors How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including "typicals," must be validated for each customer application by customer's technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018-2019 NXP B.V. MRF300AN MRF300BN Document Number: RF Device Data MRF300AN Rev. 1,Semiconductors 05/2019 NXP 17