MRF300AN MRF300BN
1
RF Device Data
NXP Semiconductors
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These devices are designed for use in HF and VHF communications,
industrial, scientific and medical (ISM) and broadcast and aerospace
applications. The devices are extremely rugged and exhibit high performance
up to 250 MHz.
Typical Performance: VDD =50Vdc
Frequency
(MHz) Signal Type
Pout
(W)
Gps
(dB)
D
(%)
13.56
CW
320 CW 28.1 79.7
27 340 CW 27.3 80.6
40.68 (1) 330 CW 28.2 79.0
50 320 CW 27.3 73.2
81.36 320 CW 27.3 73.1
144 315 CW 22.9 72.4
230 (2) Pulse
(100 sec, 20% Duty Cycle)
330 Peak 20.4 75.5
Load Mismatch/Ruggedness
Frequency
(MHz) Signal Type VSWR
Pin
(W)
Test
Voltage Result
40.68 Pulse
(100 sec, 20%
Duty Cycle)
> 65:1 at all
Phase
Angles
2 Peak
(3 dB
Overdrive)
50 No Device
Degradation
230 Pulse
(100 sec, 20%
Duty Cycle)
> 65:1 at all
Phase
Angles
6 Peak
(3 dB
Overdrive)
50 No Device
Degradation
1. Measured in 40.68 MHz reference circuit (page 5).
2. Measured in 230 MHz fixture (page 10).
Features
Mirror pinout versions (A and B) to simplify use in a push--pull,
two--up configuration
Characterizedfrom30to50V
Suitable for linear application
Integrated ESD protection with greater negative gate--source
voltage range for improved Class C operation
Included in NXP product longevity program with assured
supply for a minimum of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies
Document Number: MRF300AN
Rev. 1, 05/2019
NXP Semiconductors
Technical Data
1.8–250 MHz, 300 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
T O -- 2 4 7 -- 3
MRF300BN
T O -- 2 4 7 -- 3
MRF300AN
G
S
D
MRF300AN
MRF300BN
Note: Exposed backside of the package
also serves as a source terminal
for the transistor.
D
S
G
Backside
D
S
G
2018–2019 NXP B.V.
2
RF Device Data
NXP Semiconductors
MRF300AN MRF300BN
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +133 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 50 Vdc
Storage Temperature Range Tstg –65to+150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1,2) TJ–40 to +175 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD272
1.82
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 76C, 300 W CW, 50 Vdc, IDQ = 50 mA, 40.68 MHz
RJC 0.55 C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 74C, 300 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
50 Vdc, IDQ = 100 mA, 230 MHz
ZJC 0.13 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JS--001--2017) 2, passes 2500 V
Charge Device Model (per JS--002--2014) C3, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 0225 (4) C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D=50mAdc)
V(BR)DSS 133 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 10 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 840 Adc)
VGS(th) 1.7 2.2 2.7 Vdc
Gate Quiescent Voltage
(VDS =50Vdc,I
D= 100 mAdc)
VGS(Q) —2.5 —Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1Adc)
VDS(on) —0.16 —Vdc
Forward Transconductance
(VDS =10Vdc,I
D=30Adc)
gfs —28 —S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Peak temperature during reflow process must not exceed 225C.
(continued)
MRF300AN MRF300BN
3
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —2.31 —pF
Output Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —104 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —403 —pF
Typical Performance – 230 MHz (In NXP 230 MHz Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 100 mA, Pin =3W,f=230MHz,
100 sec Pulse Width, 20% Duty Cycle
Common--Source Amplifier Output Power Pout —330 — W
Drain Efficiency D—75.5 — %
Input Return Loss IRL — –21 —dB
Table 6. Load Mismatch/Ruggedness (In NXP 230 MHz Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz) Signal Type VSWR
Pin
(W) Test Voltage, VDD Result
230 Pulse
(100 sec, 20% Duty Cycle)
> 65:1 at all
Phase Angles
6 Peak
(3 dB Overdrive)
50 No Device Degradation
Table 7. Ordering Information
Device Shipping Information Package
MRF300AN
MPQ = 240 devices (30 devices per tube, 8 tubes per box)
TO--247--3L (Pin 1: Gate,
Pin 2: Source, Pin 3: Drain)
MRF300BN TO--247--3L (Pin 1: Drain,
Pin 2: Source, Pin 3: Gate)
4
RF Device Data
NXP Semiconductors
MRF300AN MRF300BN
TYPICAL CHARACTERISTICS
50
1
1000
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 1. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
100
10
40
Coss
Measured with 30 mV(rms)ac @ 1 MHz, VGS =0Vdc
Crss
Ciss
30
10
8
90
TJ, JUNCTION TEMPERATURE (C)
Figure 2. MTTF versus Junction Temperature — CW
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
106
105
104
110 130
MTTF (HOURS)
150
107
ID=6.2Amps
VDD =50Vdc
170 190
7.8 Amps
8.7 Amps
MRF300AN MRF300BN
5
RF Device Data
NXP Semiconductors
40.68 MHz REFERENCE CIRCUIT (MRF300AN)
Table 8. 40.68 MHz Performance (In NXP Reference Circuit, 50 ohm system)
VDD =50Vdc,I
DQ = 100 mA, Pin =0.5W,CW
Frequency
(MHz)
Gps
(dB)
D
(%)
Pout
(W)
40.68 28.2 79.0 330
6
RF Device Data
NXP Semiconductors
MRF300AN MRF300BN
40.68 MHz REFERENCE CIRCUIT (MRF300AN) — 23(5.1 cm 7.6 cm)
Figure 3. MRF300AN 40.68 MHz Reference Circuit Component Layout
Note: Component numbers C2, C4–C11, C14–C16, C23, C24, C28, C31, C32,
R4 and L2 are not used.
aaa--030512
D108224
Q1
R3
L1
R2
C3
C1
R1
Rev. 0
C21
L4
L5
L6
L3
B1
J3
J2
C22
C29
C30
C18
C12
D1
R9
R5
R6
R7
R8
JP1
J1
C13
C19
C20
C33
C34
C27
C26
C17
C25
MRF300AN MRF300BN
7
RF Device Data
NXP Semiconductors
40.68 MHz REFERENCE CIRCUIT (MRF300AN)
Table 9. MRF300AN Reference Circuit Component Designations and Values — 40.68 MHz
Part Description Part Number Manufacturer
B1 Long Ferrite Bead 2743021447 Fair-Rite
C1, C13, C17 22,000 pF Chip Capacitor ATC200B223KT50XT ATC
C3 200 pF Chip Capacitor GQM2195C2A201GB12D Murata
C12 1F Chip Capacitor GRM31CR72A105KA01L Murata
C18, C19, C20 68 pF Chip Capacitor ATC100B680JT500XT ATC
C21 200 pF Chip Capacitor ATC100B201JT300XT ATC
C22 220 pF Chip Capacitor ATC100B221JT200XT ATC
C25 0.1 F Chip Capacitor GRM32NR72A104KA01B Murata
C26 10 F Chip Capacitor GRM32ER61H106KA12L Murata
C27 56 pF Chip Capacitor ATC100B560CT500XT ATC
C29 75 pF Chip Capacitor ATC100B750JT500XT ATC
C30 91 pF Chip Capacitor ATC100B910JT500XT ATC
C33 5100 pF Chip Capacitor ATC700B512KT50XT ATC
C34 220 F, 63 V Electrolytic Capacitor EEU-FC1J221 Panasonic
D1 8.2 V Zener Diode SMAJ4738A-TP Micro Commercial Components
J1 Right Angle Breakaway Headers (2 Pins) 9-146305-0 TE Connectivity
J2, J3 Jumper Copper Foil
JP1 Shunt (J1) 382811-8 TE Connectivity
L1 120 nH Chip Inductor 1008CS-121XJLB Coilcraft
L3 117 nH Chip Inductor 1212VS-111MEB Coilcraft
L4 33 nH Chip Inductor 2014VS-33NMEB Coilcraft
L5 108 nH Chip Inductor 2014VS-111MEB Coilcraft
L6 155 nH Chip Inductor 2014VS-151MEB Coilcraft
Q1 RF Power LDMOS Transistor MRF300AN NXP
R1, R3 0, 1/4 W Chip Resistor CRCW12060000Z0EA Vishay
R2 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay
R5 12 k, 1/4 W Chip Resistor CRCW120612K0FKEA Vishay
R6 27 k, 1/4 W Chip Resistor CRCW120627K0FKEA Vishay
R7, R8 20 k, 1/4 W Chip Resistor CRCW120620K0FKEA Vishay
R9 5.0 kMulti--turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns
PCB FR4 0.087,r= 4.8, 2 oz. Copper D108224 MTL
8
RF Device Data
NXP Semiconductors
MRF300AN MRF300BN
TYPICAL CHARACTERISTICS — 40.68 MHz
REFERENCE CIRCUIT (MRF300AN)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
250
200
Pout, OUTPUT POWER (WATTS)
150
43.52.501.51
300
350
0
400
100
50
Figure 4. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
Pin, INPUT POWER (WATTS)
250
200
Pout, OUTPUT POWER (WATTS)
150
0
300
350
0
400
100
50
40.68 250 340
f
(MHz)
P1dB
(W)
P3dB
(W)
Figure 5. CW Output Power versus Input Power
Pout, OUTPUT POWER (WATTS)
Figure 6. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
30
29
33
050
90
70
50
30
35
27
28
31
32
34
80
60
40
20
100
100 150 200 250 300 350 400
0.5 2 3
VDD = 50 Vdc, f = 40.68 MHz, CW
Pin =0.5W
Pin =0.25W
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VDD =50Vdc,I
DQ = 100 mA, f = 40.68 MHz, CW
26
25
10
0
VDD =50Vdc,I
DQ = 100 mA, f = 40.68 MHz, CW
Gps
D
MRF300AN MRF300BN
9
RF Device Data
NXP Semiconductors
40.68 MHz REFERENCE CIRCUIT (MRF300AN)
f
MHz
Zsource
Zload
40.68 7.83 + j13.51 5.34 + j1.03
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 7. Series Equivalent Source and Load Impedance — 40.68 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
10
RF Device Data
NXP Semiconductors
MRF300AN MRF300BN
230 MHz FIXTURE (MRF300AN) — 45(10.2 cm 12.7 cm)
Figure 8. MRF300AN Fixture Component Layout — 230 MHz
aaa--030511
C1
C2 C4
C3 C5 B1
R1
C14
L2
C9 C11
C12
C10
C13
C17
C16
C15
C8
C6
C7
L1
MRF300AN
Rev. 0
D110614
cut out
area
Table 10. MRF300AN Fixture Component Designations and Values — 230 MHz
Part Description Part Number Manufacturer
B1 Long Ferrite Bead 2743021447 Fair-Rite
C1 47 F, 16 V Tantalum Capacitor T491D476K016AT Kemet
C2 2.2 F Chip Capacitor C3225X7R1H225K250AB TDK
C3 10 nF Chip Capacitor C1210C103J5GACTU Kemet
C4 0.1 F Chip Capacitor GRM319R72A104KA01D Murata
C5, C9 1000 pF Chip Capacitor ATC800B102JT50XT ATC
C6, C7 18 pF Chip Capacitor ATC100B180JT500XT ATC
C8, C14 56 pF Chip Capacitor ATC100B560CT500XT ATC
C10 0.1 F Chip Capacitor C1812104K1RACTU Kemet
C11 2.2 F Chip Capacitor C3225X7R2A225K230AB TDK
C12 2.2 F Chip Capacitor HMK432B7225KM-T Taiyo Yuden
C13 220 F, 100 V Electrolytic Capacitor MCGPR100V227M16X26 Multicomp
C15 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC
C16 24 pF Chip Capacitor ATC100B240JT500XT ATC
C17 470 pF Chip Capacitor ATC800B471JT200XT ATC
L1 47 nH Chip Inductor 1812SMS-47NJLC Coilcraft
L2 146 nH Chip Inductor 1010VS-141NME Coilcraft
R1 470  1/4 W Chip Resistor CRCW1206470RFKEA Vishay
PCB Rogers AD255C 0.030,r= 2.55, 2 oz. Copper D110614 MTL
MRF300AN MRF300BN
11
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 230 MHz, TC=25_C
FIXTURE (MRF300AN)
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 9. Output Power versus Gate--Source
Voltage at a Constant Input Power
0
Pout, OUTPUT POWER (WATTS) PEAK
250
200
150
100
50
1.5 2 2.5 3
350
300
Pin =3.0W
Pin =1.5W
0.5 1
VDD = 50 Vdc, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
Pin, INPUT POWER (dBm) PEAK
51
49
43
Pout, OUTPUT POWER (dBm) PEAK
47
36333021 2724
53
55
18
VDD =50Vdc,I
DQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
230 334 382
f
(MHz)
P1dB
(W)
P3dB
(W)
Figure 10. Output Power versus Input Power
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
20
18
IDQ = 900 mA
22 600 mA
100 mA
5 100
0
80
60
40
20
300 mA
600 mA
900 mA
24
D
Gps
100 mA
VDD = 50 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle
16
D
VDD =50Vdc,I
DQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
18
17
22
550
10
80
70
60
50
40
30
20
23
Pout, OUTPUT POWER (WATTS) PEAK
Figure 12. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
16
0
Pout, OUTPUT POWER (WATTS) PEAK
Figure 13. Power Gain versus Output Power
and Drain--Source Voltage
20
Gps, POWER GAIN (dB)
16
14
150 200 250 300
18
VDD =30V
50 100
12
50 V
22
350
400
45
57
14
300 mA
100
19
20
21
45 V
400 450
Gps
500
500
24
IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
35 V
41
39
37
39 10
40 V
12
RF Device Data
NXP Semiconductors
MRF300AN MRF300BN
230 MHz FIXTURE (MRF300AN)
f
MHz
Zsource
Zload
230 1.77 + j1.90 2.50 + j0.78
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 14. Series Equivalent Source and Load Impedance — 230 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
MRF300AN MRF300BN
13
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
14
RF Device Data
NXP Semiconductors
MRF300AN MRF300BN
MRF300AN MRF300BN
15
RF Device Data
NXP Semiconductors
16
RF Device Data
NXP Semiconductors
MRF300AN MRF300BN
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0May 2018 Initial release of data sheet
1Jan. 2019 Typical Performance table: added 13.56, 50 and 144 MHz reference circuits and updated 81.36 MHz data,
p. 1
Package photos: added backside photo, p. 1
Table 4, Moisture Sensitivity Level: added footnote “Peak temperature during reflow process must not
exceed 225C.” Updated table, p. 2.
Fig. 1, Capacitance versus Drain--Source Voltage: removed note as not applicable to graph, p. 4
Table 8, 40.68 MHz Performance table; Fig. 5, CW Output Power versus Input Power; and Fig. 6, Power
Gain and Drain Efficiency versus CW Output Power: corrected bias value to 100 mA to reflect actual
measurement used in data sheet, pp. 5, 8
Package Outline Drawing: TO--247--3 package outline updated to Rev. A, pp. 13–15
General updates made to align data sheet to current standard
MRF300AN MRF300BN
17
RF Device Data
NXP Semiconductors
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Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
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NXP and the NXP logo are trademarks of NXP B.V. All other product or service names
are the property of their respective owners.
E2018–2019 NXP B.V.
Document Number: MRF300AN
Rev. 1, 05/2019