1C3D03060E Rev. 5, 10-2020
C3D03060E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 600-Volt Schottky Rectier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coecient on VF
Benets
• Replace Bipolar with Unipolar Rectiers
• Essentially No Switching Losses
• Higher Eciency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters
Package
TO-252-2
Part Number Package Marking
C3D03060E TO-252-2 C3D03060
PIN 1
PIN 2 CASE
VRRM = 600 V
IF (TC=135˚C) = 5 A
Qc = 7.6 nC
Maximum Ratings (TC = 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 600 V
VRSM Surge Peak Reverse Voltage 600 V
VDC DC Blocking Voltage 600 V
IFContinuous Forward Current
11
5
3
A
TC=25˚C
TC=135˚C
TC=158˚C
Fig. 3
IFRM Repetitive Peak Forward Surge Current 18
13.5 ATC=25˚C, tP=10 mS, Half Sine Wave D=0.3
TC=110˚C, tP=10 mS, Half Sine Wave D=0.3
IFSM Non-Repetitive Peak Forward Surge Current 26
23 ATC=25˚C, tP=10 mS, Half Sine Wave D=0.3
TC=110˚C, tP=10 mS, Half Sine Wave D=0.3
IFSM Non-Repetitive Peak Forward Surge Current 100 A TC=25˚C, tP=10 µS, Pulse
Ptot Power Dissipation 47
20 WTC=25˚C
TC=110˚C Fig. 4
dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-600V
TJ , Tstg Operating Junction and Storage Temperature -55 to
+175 ˚C
2C3D03060E Rev. 5, 10-2020
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.5
1.8
1.7
2.4 VIF = 3 A TJ=25°C
IF = 3 A TJ=175°C Fig. 1
IRReverse Current 4
8
20
80 μA VR = 600 V TJ=25°C
VR = 600 V TJ=175°C Fig. 2
QCTotal Capacitive Charge 7.6 nC
VR = 400 V, IF = 3A
di/dt = 500 A/μS
TJ = 25°C
Fig. 5
C Total Capacitance
166
14
11
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
ECCapacitance Stored Energy 1.1 μJ VR = 400 V Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC Thermal Resistance from Junction to Case 3.2 °C/W Fig. 8
Typical Performance
40
60
80
100
Reverse Leakage Current, I
RR
(uA)
TJ= 175 °C
TJ= 125 °C
TJ= 75 °C
T
= 25
°
C
0
20
0 200 400 600 800 1000 1200
Reverse Leakage Current, I
Reverse Voltage, V
R
(V)
TJ= -55 °C
T
J
= 25
°
C
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
4
6
8
10
Foward Current, I
F
(A)
T
J
= -55 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 175 °C
T
J
= 125 °C
0
2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Foward Current, I
Foward Voltage, VF(V)
IF (A)
VF (V) VR (V)
IR (mA)
3C3D03060E Rev. 5, 10-2020
Figure 3. Current Derating Figure 4. Power Derating
20
25
30
35
40
45
50
0
5
10
15
25 50 75 100 125 150 175
Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
Typical Performance
4
6
8
10
12
Capacitive Charge, Q
C
(nC)
Conditions:
T
J
= 25 °C
0
2
4
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
60
80
100
120
140
160
180
Capacitance (pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
0
20
40
60
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, VR(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D03060E Rev. 5, 10-2020
Typical Performance
Figure 7. Capacitance Stored Energy
1
1.5
2
2.5
3
Capacitance Stored Energy, E
C(µJ)
0
0.5
1
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, VR(V)
VR (V)
EC(mJ)
Figure 8. Transient Thermal Impedance
100E-3
1
0.5
0.3
0.1
0.05
10E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
0.02
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C3D03060E Rev. 5, 10-2020
Recommended Solder Pad Layout
Part Number Package Marking
C3D03060E TO-252-2 C3D03060
TO-252-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
Tjb June 2015
MX+DI+PSI
Package Dimensions
Package TO-252-2
Package Dimensions
SYMBOL
MILLIMETERS
MIN
MAX
A
2.159
2.413
A1
0
0.13
b
0.64
0.89
b
2
0.653
1.143
b
3
5.004
5.6
c
0.457
0.61
c2
0.457
0.864
D
5.867
6.248
D1
5.21
-
E
6.35
6.73
E1
4.32
-
e
4.58 BSC
H
9.65
10.414
L
1.106
1.78
L2
0.51 BSC
L3
0.889
1.27
L4
0.64
1.01
Ɵ
0°
8°
66 C3D03060E Rev. 5, 10-2020
Copyright © 2020 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac debrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air trac control systems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Related Links
Diode Model
VT
RT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT = VT+If*RT
VT = 0.96+(TJ* -1.1*10-3)
RT = 0.145+(TJ* 9.5*10-4)