DISCONTINUED PLEASE USE ZVN2110A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2120C ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=10 G D S E-Line TO92 Compatible REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE 200 UNIT V Continuous Drain Current at Tamb=25C ID 180 mA Pulsed Drain Current IDM 2 A Gate Source Voltage VGS 20 V 700 mW -55 to +150 C Power Dissipation at Tamb=25C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 200 Gate-Source Threshold Voltage VGS(th) 1 MAX. ID=1mA, VGS=0V 3 V ID=1mA, VDS= VGS nA VGS= 20V, VDS=0V A A VDS=200V, VGS=0 VDS=160V, VGS=0V, T=125C(2) mA VDS=25V, VGS=10V VGS=10V,ID=250mA mS VDS=25V,ID=250mA Gate-Body Leakage IGSS 20 Zero Gate Voltage Drain Current IDSS 10 100 On-State Drain Current(1) ID(on) 500 Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) gfs UNIT CONDITIONS. V 10 100 Input Capacitance (2) Ciss 85 pF Common Source Output Capacitance (2) Coss 20 pF Reverse Transfer Capacitance (2) Crss 7 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 20 ns Fall Time (2)(3) tf 12 ns (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-371 VDS=25 V, VGS=0V, f=1MHz VDD 25V, ID=250mA ( 3