N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt VDS
*R
DS(on)=10Ω
REFER TO ZVN2120A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 200 V
Continuous Drain Current at Tamb
=25°C ID180 mA
Pulsed Drain Current IDM 2A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb
=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 200 V ID=1mA, VGS
=0V
Gate-Source Threshold
Voltage
VGS(th) 1 3 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS 10
100 µA
µA
VDS=200V, VGS=0
VDS=160V, VGS=0V,
T=125°C(2)
On-State Drain Current(1) ID(on) 500 mA VDS=25V, VGS
=10V
Static Drain-Source On-State
Resistance (1)
RDS(on) 10 ΩVGS=10V,ID=250mA
Forward Transconductance
(1)(2)
gfs 100 mS VDS=25V,ID=250mA
Input Capacitance (2) Ciss 85 pF
Common Source Output
Capacitance (2)
Coss 20 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss 7pF
Turn-On Delay Time (2)(3) td(on) 8ns
VDD
≈25V, ID=250mA
Rise Time (2)(3) tr8ns
Turn-Off Delay Time (2)(3) td(off) 20 ns
Fall Time (2)(3) tf12 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(
3
E-Line
TO92 Compatible
ZVN2120C
3-371
G
D
S
DISCONTINUED PLEASE USE ZVN2110A
