MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD12MVS1 Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION (0.22) OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 specifically designed for VHF RF power 0.8+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applications. 2.0+/-0.05 High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) 2 3.5+/-0.05 FEATURES 1.0+/-0.05 4.9+/-0.15 1 INDEX MARK (Gate) APPLICATION (0.25) (0.22) 3 (0.25) Terminal No. 0.9+/-0.1 0.2+/-0.05 For output stage of high power amplifiers in 1.Drain (output) 2.Source (GND) VHF band mobile radio sets. 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD12MVS1-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25C, UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS ID Pin Pch Tj Tstg Rthj-c PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Channel Dissipation Junction Temperature Storage Temperature Thermal Resistance CONDITIONS VGS=0V VDS=0V Zg=Zl=50 Tc=25C Junction to Case RATINGS 50 +/- 20 4 2 50 150 -40 to +125 2.5 UNIT V V A W W C C C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS IDSS IGSS VTH Pout D Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output Power Drain Efficiency VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz,VDD=7.2V Pin=1.0W,Idq=1.0A VDD=9.2V,Po=12W(Pin Control) f=175MHz,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) Load VSWR tolerance MIN. 1.8 11.5 55 LIMITS TYP. MAX. 10 1 4.4 12 57 Not destroy UNIT uA uA V W % - Note: Above parameters, ratings, limits and conditions are subject to change. RD12MVS1 MITSUBISHI ELECTRIC 1/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE CHANNEL DISSIPATION Pch(W) 60 Vgs-Ids CHARACTERISTICS 10 Ta=+25C Vds=10V *1:The material of the PCB Glass epoxy (t=0.6 mm) 50 8 Ids(A),GM(S) 40 On PCB(*1) with Heat-sink 30 20 Ids 6 4 GM 2 On PCB(*1) 10 0 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(C) 200 0 Vds-Ids CHARACTERISTICS 3 4 Vgs(V) 5 6 7 160 Ta=+25C Vgs=7.5V 8 120 Vgs=6.0V Vgs=5.5V 4 Vgs=5.0V 3 Ciss(pF) 6 5 Ta=+25C f=1MHz 140 7 Ids(A) 2 Vds VS. Ciss CHARACTERISTICS 9 Vgs=4.5V 100 80 60 2 Vgs=4.0V 40 1 Vgs=3.5V 20 0 0 0 2 4 6 Vds(V) 8 10 0 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 120 20 Ta=+25C f=1MHz 100 Ta=+25C f=1MHz 18 16 14 Crss(pF) 80 Coss(pF) 1 60 40 12 10 8 6 4 20 2 0 0 0 RD12MVS1 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 2/7 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz 90 14 80 30 60 Gp 20 40 10 20 0 5 10 15 Pin(dBm) 20 25 50 4 30 0 5 1 0 RD12MVS1 8 Vdd(V) 10 12 Ids(A),GM(S) 2 Idd(A) Po(W) 10 20 1000 -25C +75C 6 Idd 3 6 800 +25C Vds=10V Tc=-25~+75C 4 0 400 600 Pin(mW) 8 Po 15 200 Vgs-Ids CHARACTORISTICS 2 5 4 40 Idd 0 30 25 20 60 6 Vdd-Po CHARACTERISTICS @f=175MHz Ta=25C f=175MHz Pin=0.3W Icq=700mA Zg=ZI=50 ohm 70 2 0 0 d 8 80 Ta=25C f=175MHz Vdd=7.2V Idq=1.0A 10 -5 Po 12 d(%) Po(dBm) , Gp(dB) , Idd(A) 40 Po Pout(W) , Idd(A) Ta=+25C f=175MHz Vdd=7.2V Idq=1.0A d(%) Pin-Po CHARACTERISTICS @f=175MHz 4 2 0 0 MITSUBISHI ELECTRIC 3/7 2 4 Vgs(V) 6 8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W TEST CIRCUIT (f=175MHz) Vdd Vgg C2 C3 C1 W 47pF RF-in 35mm W Contact 3.5mm 4.7k 3mm L1 10.8nH 330pF 100pF 4mm Contact 3.5mm 6.0mm 5.0mm 20mm 12mm RD12MVS1 15pF L2 43.7nH 24pF 33pF RF-out 25mm 330pF 68pF Note:Boardmaterial-Teflonsubstrate L:Enameledwire Microstriplinewidth=2.2mm/50,r:2.7,t=0.8mm L1:4Turns,D:0.43mm,1.66mm(outsidediameter) W:linewidth=1.0mm L2:6Turns,D:0.43mm,2.46mm(outsidediameter) ChipCondencer:GRM40 C1,C2:1000pF Copper board spring t=0.1mm C3:10uF,50V INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=50 Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W f=175MHz Zout* Zin*=0.965-j7.73 Zout*=1.73-j1.14 f=175MHz Zin* RD12MVS1 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of output impedance MITSUBISHI ELECTRIC 4/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 RD12MVS1 S11 (mag) 0.824 0.816 0.817 0.829 0.837 0.845 0.852 0.860 0.870 0.876 0.886 0.891 0.902 0.903 0.909 0.907 0.912 0.923 0.928 0.934 0.932 0.936 0.932 0.935 0.939 0.939 0.943 0.945 0.943 0.939 0.943 0.948 0.951 0.953 0.952 0.954 0.944 0.951 0.954 0.955 (ang) -159.3 -169.0 -171.7 -172.8 -173.4 -173.9 -174.0 -174.3 -175.0 -175.0 -175.6 -175.8 -175.9 -176.2 -176.7 -177.6 -177.9 -178.3 -178.5 -178.6 -178.8 -179.2 179.6 179.1 179.2 179.4 179.1 178.7 177.5 177.2 176.9 176.8 177.1 176.7 176.1 175.4 174.4 174.6 175.0 175.0 S21 (mag) (ang) 26.397 93.4 13.193 85.2 8.716 79.3 6.537 74.5 5.110 68.5 4.117 64.2 3.402 60.8 2.896 57.2 2.525 53.2 2.175 48.9 1.897 46.5 1.675 43.6 1.496 41.0 1.348 38.3 1.208 35.7 1.087 33.7 0.996 31.6 0.912 29.7 0.836 27.9 0.748 25.8 0.707 23.6 0.647 23.2 0.591 20.8 0.562 20.0 0.520 17.4 0.485 15.5 0.460 15.6 0.435 15.5 0.407 13.3 0.380 12.2 0.358 10.8 0.327 8.6 0.308 8.0 0.314 8.5 0.284 7.0 0.269 9.7 0.254 6.7 0.250 6.0 0.232 1.9 0.227 7.8 S12 (mag) 0.018 0.016 0.016 0.016 0.016 0.015 0.016 0.012 0.014 0.013 0.012 0.012 0.014 0.012 0.009 0.009 0.009 0.004 0.008 0.007 0.005 0.006 0.004 0.003 0.003 0.003 0.003 0.002 0.004 0.001 0.004 0.002 0.003 0.003 0.006 0.003 0.007 0.006 0.003 0.003 MITSUBISHI ELECTRIC 5/7 S22 (ang) -3.3 1.4 -10.9 -14.1 -18.2 -18.3 -15.1 -30.4 -29.9 -24.5 -39.4 -53.1 -32.9 -32.2 -29.2 -21.6 -32.5 -37.2 -25.9 -21.3 -46.6 -25.0 -40.9 -33.6 17.7 25.4 51.4 5.7 5.6 -16.1 58.8 -6.7 40.4 77.0 46.5 64.5 60.3 69.7 80.3 86.7 (mag) 0.761 0.765 0.778 0.787 0.800 0.796 0.810 0.836 0.858 0.855 0.859 0.860 0.886 0.898 0.898 0.893 0.903 0.910 0.917 0.925 0.922 0.922 0.939 0.939 0.938 0.930 0.932 0.946 0.949 0.940 0.935 0.943 0.945 0.948 0.946 0.950 0.946 0.952 0.959 0.950 (ang) -160.3 -168.1 -170.7 -170.3 -171.7 -172.3 -172.3 -172.2 -172.2 -173.0 -173.3 -173.4 -174.5 -174.6 -175.0 -175.6 -175.7 -176.6 -176.8 -177.3 -177.6 -177.6 -178.0 -178.9 -179.3 -179.5 -179.9 -179.9 179.3 179.0 178.8 178.2 177.5 176.8 176.7 176.7 176.0 175.7 175.0 174.8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W RD12MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=900mA) Freq. [MHz] 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 RD12MVS1 S11 (mag) 0.815 0.802 0.803 0.818 0.829 0.838 0.849 0.855 0.869 0.878 0.886 0.898 0.905 0.908 0.915 0.919 0.922 0.926 0.933 0.937 0.940 0.937 0.937 0.935 0.945 0.948 0.951 0.950 0.946 0.948 0.947 0.948 0.955 0.958 0.954 0.950 0.947 0.950 0.953 0.959 (ang) -150.5 -163.9 -167.8 -169.7 -170.6 -171.5 -171.6 -172.0 -172.9 -173.7 -174.1 -174.3 -174.5 -174.9 -175.8 -176.6 -177.3 -177.7 -177.7 -177.8 -178.5 -179.3 179.7 179.7 179.6 179.7 179.5 178.9 178.0 177.2 177.1 176.9 177.1 176.8 176.2 175.3 174.9 174.9 174.9 174.7 S21 (mag) (ang) 31.656 96.3 15.905 85.5 10.443 78.2 7.776 72.7 6.054 66.0 4.816 60.7 3.945 57.1 3.358 52.9 2.872 48.7 2.459 44.8 2.135 41.8 1.876 38.8 1.671 36.3 1.492 33.5 1.329 31.1 1.188 28.7 1.083 26.9 0.974 25.0 0.894 23.0 0.816 20.9 0.745 19.6 0.700 18.2 0.643 16.2 0.605 14.6 0.549 13.1 0.510 14.1 0.479 12.6 0.454 9.0 0.424 8.9 0.382 7.2 0.370 6.0 0.357 7.4 0.332 4.4 0.323 4.9 0.301 2.7 0.296 2.4 0.284 -1.0 0.252 -0.5 0.251 2.6 0.230 -2.3 S12 (mag) 0.016 0.016 0.016 0.016 0.016 0.014 0.014 0.015 0.013 0.013 0.012 0.009 0.011 0.009 0.010 0.007 0.006 0.008 0.005 0.005 0.006 0.004 0.007 0.004 0.004 0.004 0.003 0.003 0.003 0.004 0.004 0.005 0.005 0.004 0.004 0.003 0.007 0.006 0.005 0.008 MITSUBISHI ELECTRIC 6/7 S22 (ang) 0.3 -6.2 -12.3 -16.7 -18.7 -24.8 -27.4 -32.9 -33.6 -27.8 -29.3 -19.7 -46.4 -51.2 -37.5 -39.4 -76.7 -46.1 -48.1 -46.9 -25.8 -45.0 -49.7 1.3 -46.8 51.2 32.2 -36.9 83.3 29.6 47.6 68.7 60.4 66.9 92.7 68.9 65.3 87.1 90.1 90.1 (mag) 0.700 0.698 0.719 0.732 0.751 0.753 0.784 0.813 0.836 0.839 0.844 0.851 0.873 0.895 0.891 0.898 0.899 0.913 0.925 0.923 0.924 0.923 0.940 0.935 0.934 0.938 0.937 0.943 0.951 0.948 0.944 0.938 0.947 0.949 0.953 0.950 0.947 0.947 0.950 0.949 (ang) -150.9 -161.8 -165.9 -164.9 -166.6 -167.1 -167.7 -167.8 -168.4 -168.9 -169.9 -170.5 -171.1 -172.0 -172.4 -172.9 -173.5 -173.9 -174.8 -175.1 -175.7 -175.9 -176.4 -177.1 -177.9 -177.9 -178.1 -178.9 -179.5 -179.9 179.8 179.6 178.7 178.4 178.1 177.8 177.4 176.6 176.1 175.2 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD12MVS1 Silicon MOSFET Power Transistor, 175MHz, 12W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD12MVS1 MITSUBISHI ELECTRIC 7/7 10 Jan 2006