MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION OUTLINE DRAWING
0.2+/-0.05
0.2+/-0.05
0.9+/-0.1
INDEX MARK
(Gate)
6.0+/-0.15
4.9+/-0.15
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1.0+/-0.05
(0.25)
2
3
1
3.5+/-0.05
2.0+/-0.05
(0.25)
(0.22) (0.22)
RD12MVS1 is a MOS FET type transistor 
specifically designed for VHF RF power 
amplifiers applications.
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
APPLICATION
For output stage of high power amplifiers in 
VHF band mobile radio sets.
RoHS COMPLIANT
RD12MVS1-101,T112is a RoHS compliant
products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to Source Voltage VGS=0V 50 V
VGSS Gate to Source Voltage VDS=0V +/- 20 V
ID Drain Current 4 A
Pin Input Power Zg=Zl=50Ω 2 W
Pch Channel Dissipation Tc=25°C 50 W
Tj Junction Temperature 150
°C
Tstg Storage Temperature -40 to +125 °C
Rthj-c Thermal Resistance Junction to Case 2.5 °C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to Source Leak Current VGS=10V, VDS=0V - - 1 uA
VTH Gate Threshold Voltage VDS=12V, IDS=1mA 1.8 - 4.4 V
Pout Output Power 11.5 12 - W
ηD Drain Efficiency
f=175MHz,VDD=7.2V
Pin=1.0W,Idq=1.0A 55 57 - %
Load VSWR tolerance
VDD=9.2V,Po=12W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
Not destroy -
Note: Above parameters, ratings, limits and conditions are subject to change.
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION V S.
A M BIENT T EM PERAT URE
0
10
20
30
40
50
60
0 40 80 120 160 200
A MBIENT TEMPERA TURE Ta ( °C)
CHANNEL DISSIPATION Pch(W
)
On PCB(*1)
On PCB(*1) with Heat-sink
*1:The material of the PCB
Gl ass epoxy (t=0.6 mm)
Vds VS. Crss CHARACTERISTICS
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
20
40
60
80
100
120
0 5 10 15 20
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
20
40
60
80
100
120
140
160
0 5 10 15 20
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
1
2
3
4
5
6
7
8
9
0246810
Vds(V)
Ids(A)
Ta= +25°C
Vgs=7.5V
Vgs=5.5V
Vgs=4.5V
Vgs=5.0V
Vgs=6.0V
Vgs=4.0V
Vgs=3.5V
Vgs-Ids CHARACTERISTICS
0
2
4
6
8
10
01234567
Vgs(V)
Ids(A),GM(S)
Ta= +25°C
Vds= 10V
Ids
GM
2/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
0
10
20
30
40
-5 0 5 10 15 20 25 30
Pin(dBm)
Po(dBm) , Gp(dB) , Idd(A)
0
20
40
60
80
ηd(%)
Ta= +25°C
f= 175MHz
Vdd=7.2V
Idq = 1.0A
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERISTICS @f=175MHz
0
2
4
6
8
10
12
14
0 200 400 600 800 1000
Pin( mW)
Pout(W) , Idd(A)
20
30
40
50
60
70
80
90
ηd(%)
Po
ηd
Idd
Ta= 25°C
f= 175MHz
Vdd=7.2V
Idq = 1.0A
Vdd-Po CHARACTERISTICS @f=175MHz
0
5
10
15
20
25
4681012
Vdd(V)
Po(W)
0
1
2
3
4
5
Idd(A)
Po
Idd
Ta= 25°C
f= 175MHz
Pin=0.3W
Icq = 700mA
Zg = ZI=50 ohm
Vgs-Ids CHARACTORISTICS 2
0
2
4
6
8
02468
Vgs(V)
Ids(A),GM(S)
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
+25°C
3/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT (f=175MHz)
24pF
WW
RD12MVS1
330pF
RF-in
47pF
Vdd
Vgg
25mm
4.7kΩ
15pF
5.0mm
35mm 3mm
C2
C1
L2
43.7nH
RF-out
12mm 68pF
L:Enameledwire
L1:4Turns,D:0.43mm,φ1.66mm(outsidediameter)
L2:6Turns,D:0.43mm,φ2.46mm(outsidediameter)
C1,C2:1000pF
C3:10uF,50V
Note:Boardmaterial-Teflonsubstrate
Microstriplinewidth=2.2mm/50,εr:2.7,t=0.8mm
W:linewidth=1.0mm
   Chip Condencer:GRM40
Contact
3.5mm 6.0mm
Copper board spring t=0.1mm
Contact
3.5mm
100pF
C3
33pF
330pF
L1
10.8nH
4mm 20mm
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
Zin*=0.965-j7.73
Zout*=1.73-j1.14
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
f=175MHz Zin*
f=175MHz Zout*
4/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
25 0.824 -159.3 26.397 93.4 0.018 -3.3 0.761 -160.3
50 0.816 -169.0 13.193 85.2 0.016 1.4 0.765 -168.1
75 0.817 -171.7 8.716 79.3 0.016 -10.9 0.778 -170.7
100 0.829 -172.8 6.537 74.5 0.016 -14.1 0.787 -170.3
125 0.837 -173.4 5.110 68.5 0.016 -18.2 0.800 -171.7
150 0.845 -173.9 4.117 64.2 0.015 -18.3 0.796 -172.3
175 0.852 -174.0 3.402 60.8 0.016 -15.1 0.810 -172.3
200 0.860 -174.3 2.896 57.2 0.012 -30.4 0.836 -172.2
225 0.870 -175.0 2.525 53.2 0.014 -29.9 0.858 -172.2
250 0.876 -175.0 2.175 48.9 0.013 -24.5 0.855 -173.0
275 0.886 -175.6 1.897 46.5 0.012 -39.4 0.859 -173.3
300 0.891 -175.8 1.675 43.6 0.012 -53.1 0.860 -173.4
325 0.902 -175.9 1.496 41.0 0.014 -32.9 0.886 -174.5
350 0.903 -176.2 1.348 38.3 0.012 -32.2 0.898 -174.6
375 0.909 -176.7 1.208 35.7 0.009 -29.2 0.898 -175.0
400 0.907 -177.6 1.087 33.7 0.009 -21.6 0.893 -175.6
425 0.912 -177.9 0.996 31.6 0.009 -32.5 0.903 -175.7
450 0.923 -178.3 0.912 29.7 0.004 -37.2 0.910 -176.6
475 0.928 -178.5 0.836 27.9 0.008 -25.9 0.917 -176.8
500 0.934 -178.6 0.748 25.8 0.007 -21.3 0.925 -177.3
525 0.932 -178.8 0.707 23.6 0.005 -46.6 0.922 -177.6
550 0.936 -179.2 0.647 23.2 0.006 -25.0 0.922 -177.6
575 0.932 179.6 0.591 20.8 0.004 -40.9 0.939 -178.0
600 0.935 179.1 0.562 20.0 0.003 -33.6 0.939 -178.9
625 0.939 179.2 0.520 17.4 0.003 17.7 0.938 -179.3
650 0.939 179.4 0.485 15.5 0.003 25.4 0.930 -179.5
675 0.943 179.1 0.460 15.6 0.003 51.4 0.932 -179.9
700 0.945 178.7 0.435 15.5 0.002 5.7 0.946 -179.9
725 0.943 177.5 0.407 13.3 0.004 5.6 0.949 179.3
750 0.939 177.2 0.380 12.2 0.001 -16.1 0.940 179.0
775 0.943 176.9 0.358 10.8 0.004 58.8 0.935 178.8
800 0.948 176.8 0.327 8.6 0.002 -6.7 0.943 178.2
825 0.951 177.1 0.308 8.0 0.003 40.4 0.945 177.5
850 0.953 176.7 0.314 8.5 0.003 77.0 0.948 176.8
875 0.952 176.1 0.284 7.0 0.006 46.5 0.946 176.7
900 0.954 175.4 0.269 9.7 0.003 64.5 0.950 176.7
925 0.944 174.4 0.254 6.7 0.007 60.3 0.946 176.0
950 0.951 174.6 0.250 6.0 0.006 69.7 0.952 175.7
975 0.954 175.0 0.232 1.9 0.003 80.3 0.959 175.0
1000 0.955 175.0 0.227 7.8 0.003 86.7 0.950 174.8
S11S21S12S22
5/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
RD12MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=900mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
25 0.815 -150.5 31.656 96.3 0.016 0.3 0.700 -150.9
50 0.802 -163.9 15.905 85.5 0.016 -6.2 0.698 -161.8
75 0.803 -167.8 10.443 78.2 0.016 -12.3 0.719 -165.9
100 0.818 -169.7 7.776 72.7 0.016 -16.7 0.732 -164.9
125 0.829 -170.6 6.054 66.0 0.016 -18.7 0.751 -166.6
150 0.838 -171.5 4.816 60.7 0.014 -24.8 0.753 -167.1
175 0.849 -171.6 3.945 57.1 0.014 -27.4 0.784 -167.7
200 0.855 -172.0 3.358 52.9 0.015 -32.9 0.813 -167.8
225 0.869 -172.9 2.872 48.7 0.013 -33.6 0.836 -168.4
250 0.878 -173.7 2.459 44.8 0.013 -27.8 0.839 -168.9
275 0.886 -174.1 2.135 41.8 0.012 -29.3 0.844 -169.9
300 0.898 -174.3 1.876 38.8 0.009 -19.7 0.851 -170.5
325 0.905 -174.5 1.671 36.3 0.011 -46.4 0.873 -171.1
350 0.908 -174.9 1.492 33.5 0.009 -51.2 0.895 -172.0
375 0.915 -175.8 1.329 31.1 0.010 -37.5 0.891 -172.4
400 0.919 -176.6 1.188 28.7 0.007 -39.4 0.898 -172.9
425 0.922 -177.3 1.083 26.9 0.006 -76.7 0.899 -173.5
450 0.926 -177.7 0.974 25.0 0.008 -46.1 0.913 -173.9
475 0.933 -177.7 0.894 23.0 0.005 -48.1 0.925 -174.8
500 0.937 -177.8 0.816 20.9 0.005 -46.9 0.923 -175.1
525 0.940 -178.5 0.745 19.6 0.006 -25.8 0.924 -175.7
550 0.937 -179.3 0.700 18.2 0.004 -45.0 0.923 -175.9
575 0.937 179.7 0.643 16.2 0.007 -49.7 0.940 -176.4
600 0.935 179.7 0.605 14.6 0.004 1.3 0.935 -177.1
625 0.945 179.6 0.549 13.1 0.004 -46.8 0.934 -177.9
650 0.948 179.7 0.510 14.1 0.004 51.2 0.938 -177.9
675 0.951 179.5 0.479 12.6 0.003 32.2 0.937 -178.1
700 0.950 178.9 0.454 9.0 0.003 -36.9 0.943 -178.9
725 0.946 178.0 0.424 8.9 0.003 83.3 0.951 -179.5
750 0.948 177.2 0.382 7.2 0.004 29.6 0.948 -179.9
775 0.947 177.1 0.370 6.0 0.004 47.6 0.944 179.8
800 0.948 176.9 0.357 7.4 0.005 68.7 0.938 179.6
825 0.955 177.1 0.332 4.4 0.005 60.4 0.947 178.7
850 0.958 176.8 0.323 4.9 0.004 66.9 0.949 178.4
875 0.954 176.2 0.301 2.7 0.004 92.7 0.953 178.1
900 0.950 175.3 0.296 2.4 0.003 68.9 0.950 177.8
925 0.947 174.9 0.284 -1.0 0.007 65.3 0.947 177.4
950 0.950 174.9 0.252 -0.5 0.006 87.1 0.947 176.6
975 0.953 174.9 0.251 2.6 0.005 90.1 0.950 176.1
1000 0.959 174.7 0.230 -2.3 0.008 90.1 0.949 175.2
S11S21S12S22
6/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme
short current flow between the drain and the source of the device. These results causes in fire or injury.
Warning!
7/7