MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1314-15UL
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION HIGH GAIN
IM3=-45 dBc at Pout= 30.0dBm G1dB=7.0 dB at 13.75 GHz to 14.5GHz
Single Carrier Level BROAD BAND INTERNALLY MATCHED FET
HIGH POWER HERMETICALLY SEALED PACKAGE
P1dB=42.0dBm at 13.75GHz to 14.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P1dB dBm 41.0 42.0 ⎯
Power Gain at 1dB Gain
Compression Point G1dB dB 6.0 7.0 ⎯
Drain Current IDS1 A ⎯ 4.0 5.0
Gain Flatness ΔG dB
⎯ ⎯ ±0.8
Power Added Efficiency ηadd
VDS= 10V
IDSset≅ 4.0A
f= 13.75 to 14.5GHz
% ⎯ 32 ⎯
3
rd Order Intermodulation
Distortion IM3 dBc -42 -45
⎯
Drain Current IDS2
Two-Tone Test
Po=30.0 dBm
(Single Carrier Level) A ⎯ 4.0 5.0
Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)
X Rth(c-c) °C ⎯ ⎯ 80
Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm V
DS= 3V
I
DS= 4.8A mS ⎯ 4000 ⎯
Pinch-off Voltage VGSoff V
DS= 3V
I
DS= 145mA V -0.5 -2.0 -4.5
Saturated Drain Current IDSS V
DS= 3V
V
GS= 0V A ⎯ 8.0 ⎯
Gate-Source Breakdown
Voltage VGSO I
GS= -145μA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 2.0 2.5
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
April, 2009
2
TIM1314-15UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 11.4
Total Power Dissipation (Tc= 25 °C) PT W 60
Channel Temperature Tch °C 175
Storage Temperature Tstg °C -65 to +175
PACKAGE OUTLINE (2-11C1B)
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
3
TIM1314-15UL
Output Power (Pout) vs. Frequency
VDS=10V
IDS≅4.0A
Pin=35.0 dBm
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=14.5GHz
VDS=10V
IDS≅4.0A
Pout
ηadd
Pin(dBm)
RF PERFORMANCE
13.75 14.1 14.5
44
43
42
41
40
Pout(dBm)
44
43
42
41
40
39
38
37
36
35
50
40
30
20
10
Pout(dBm)
ηadd(%)
28 30 32 34 36 38
4
TIM1314-15UL
Power Dissipation(PT) vs. Case Temperature(Tc)
Tc( °C )
IM3 vs. Output Power Characteristics
VDS=10V
freq.=14.5GHz
Δf=5MHz
Pout(dBm) @Single carrier level
0 40 80 120 160 200
PT(W)
60
30
0
24
-10
-20
-30
-40
-50
-60
IM3(dBc)
26 28 30 32 34
