January 2001
Advance Information
Copyright © Alliance Semiconductor. All rights reserved.
®
AS7C1025A
AS7C31025A
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)
2/6/01; V.0.9 Alliance Semiconductor P. 1 of 8
Features
AS7C1025A (5V version)
AS7C31025A (3.3V version)
Industrial and commercial temperatures
Organization: 131,072 x 8 bits
•High speed
- 10/10/12/15/20 ns address access time
- 3/3/4/5 ns output enable access time
Low power consumption: ACTIVE
- 660 mW (AS7C1025A) / max @ 10 ns (5V)
- 324 mW (AS7C31025A) / max @ 10 ns (3.3V)
Low power consumption: STANDBY
- 55 mW (AS7C1025A) / max CMOS (5V)
- 36 mW (AS7C31025A) / max CMOS (3.3V)
Latest 6T 0.25u CMOS technology
2.0V data retention
Easy memory expansion with
CE
,
OE
inputs
Center power and ground
TTL/LVTTL-compatible, three-state I/O
JEDEC-standard packages
- 32-pin, 300 mil SOJ
- 32-pin, 400 mil SOJ
- 32-pin, TSOP II
ESD protection 2000 volts
Latch-up current 200 mA
Logic block diagram
512
×
256
×
8
Array
(1,048,576)
Sense amp
Input buffer
A10
A11
A12
A13
A14
A15
A16
I/O0
I/O7
OE
CE
WE
Column decoder
Row decoder
Control
circuit
A9
A0
A1
A2
A3
A4
A5
A6
A7
V
CC
GND
A8
Pin arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE
I/O7
I/O6
GND
VCC
I/O5
I/O4
A12
A11
A10
A9
A8
A0
A1
A2
A3
CE
I/O0
I/O1
VCC
GND
I/O2
I/O3
WE
A4
A5
A6
A7
AS7C1025A
AS7C31025A
32-pin SOJ (300 mil)
32-pin SOJ (400 mil)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0
A1
A2
A3
CE
I/O0
I/O1
VCC
GND
I/O2
I/O3
WE
A16
A15
A14
A13
OE
I/O7
I/O6
GND
VCC
I/O5
I/O4
A9
A8
A4
A5
A6
A7
A12
A11
A10
32-pin TSOP II
AS7C1025A
AS7C31025A
Selection guide
AS7C1025A-10
AS7C31025A-10
AS7C1025A-12
AS7C31025A-12
AS7C1025A-15
AS7C31025A-15
AS7C1025A-20
AS7C31025A-20 Unit
Maximum address access time 10 12 15 20 ns
Maximum output enable access
time 33 4 5ns
Maximum
operating
current
AS7C1025A 120 110 100 100 mA
AS7C31025A 90 80 80 80 mA
Maximum
CMOS standby
current
AS7C1025A 10 10 10 15 mA
AS7C31025A 10 10 10 15 mA
®
AS7C1025A
AS7C31025A
2/6/01; V.0.9 Alliance Semiconductor P. 2 of 8
Functional description
The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as
131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 3/3/4/5 ns are ideal for
high-performance applications. The chip enable input CE permits easy memory and expansion with multiple-bank memory systems.
When
CE
is high the devices enter standby mode. The standard AS7C1025A is guaranteed not to exceed 55 mW power consumption in
standby mode. Both devices also offer 2.0V data retention.
A write cycle is accomplished by asserting write enable (
WE
) and chip enable (
CE
). Data on the input pins I/O0-I/O7 is written on the rising
edge of
WE
(write cycle 1) or
CE
(write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been
disabled with out pu t enable (
OE
) or wri t e en able (
WE
).
A read cycle is accomplished by asserting output enable (
OE
) and chip enable (
CE
), with write enable (
WE
) high. The chips drive I/O pins
with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output
drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply (AS7C1025A) or 3.3V supply (AS7C31025A). The
AS7C1025A and AS7C31025A are packaged in common industry standard packages.
Absolute maximum ratings
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Truth table
Key: X = Don’t Care, L = Low, H = High
Parameter Device Symbol Min Max Unit
Vo l tage on V CC relative to GND AS7C1025A Vt1 –0.50 +7.0 V
AS7C31025A Vt1 –0.50 +5.0 V
Voltage on any pin relative to GND Vt2 –0.50 VCC + 0.5 V
Power dissipation PD–1.0W
Storage temperature (plastic) Tstg –65 +150 oC
Ambient temperature with VCC applied Tbias –55 +125 oC
DC current into outputs (low) IOUT –20mA
CE WE OE Data Mode
H X X High Z Standby (ISB, ISB1)
L H H High Z Output disable (ICC)
LHL D
OUT Read (ICC)
LLX D
IN Write (ICC)
®
AS7C1025A
AS7C31025A
2/6/01; V.0.9 Alliance Semiconductor P. 3 of 8
Recommended operating conditions
VIL min. = –3.0V for pulse width less than tRC/2.
DC operating characteristics (over the operating range)1
Capacitance (f = 1 MHz, Ta = 25 oC, VCC = NOMINAL)2
Parameter Device Symbol Min Nominal Max Unit
Supply voltage AS7C1025A VCC 4.5 5.0 5.5 V
AS7C31025A VCC 3.0 3.3 3.6 V
Input voltage
AS7C1025A VIH 2.2 VCC + 0.5 V
AS7C31025A VIH 2.0 VCC + 0.5 V
Both VIL–0.5 0.8 V
Ambient operating temperature commercial TA0–70
oC
industrial TA–40 85 oC
Parameter Sym Test conditions Device
-10 -12 -15 -20
UnitMin Max Min Max Min Max Min Max
Input
leakage
current
| ILI | VCC = Max, VIN = GND to VCC Both 1 1 1 1 µA
Output
leakage
current
| ILO | VCC = Max, CE = VIH, Vout = GND
to VCC
Both 1 1 1 1 µA
Operating
power
supply
current
ICC CE = VIL, f = fMax, IOUT = 0 mA
AS7C1025A 120 110 100 100
mA
AS7C31025A 90 80 80 80
Standby
power
supply
current1
ISB CE = VIH, f = fMax, fOUT = 0 AS7C1025A 30 25 20 20 mA
AS7C31025A 30 25 20 20
ISB1
CE VCC–0.2V, VIN 0.2V or VIN
VCC –0.2V, f = 0, fOUT = 0
AS7C1025A 10 10 10 15 mA
AS7C31025A 10 10 10 15
Output
voltage
VOL IOL = 8 mA, VCC = Min AS7C1025A .04 0.4 0.4 0.4 V
VOH IOH = –4 mA, VCC = Min AS7C31025A 2.4 2.4 2.4 2.4 V
Data
retention
current
ICCDR
VCC = 2.0V
CE
VCC – 0.2V
VINVCC – 0.2V or
VIN0.2V
AS7C1025A 1 1 1 5 mA
AS7C31025A 1 1 1 5 mA
Parameter Symbol Signals Test conditions Max Unit
Input capacitance CIN A,
CE
,
WE
,
OE
VIN = 0V 5 pF
I/O capacitance CI/O I/O VIN = VOUT = 0V 7 pF
®
AS7C1025A
AS7C31025A
2/6/01; V.0.9 Alliance Semiconductor P. 4 of 8
Read cycle (over the operating range)3,9
Key to switching waveforms
Read waveform 1 (address controlled)3,6,7,9
Read waveform 2 (CE and OE controlled)3,6,8,9
Parameter Symbol
-10 -12 -15 -20
Unit NotesMin Max Min Max Min Max Min Max
Read cycle time tRC 10 12 15 20 ns
Address access time tAA 10 12 15 20 ns 3
Chip enable (
CE
) access time tACE 10 12 15 20 ns 3
Output enable (
OE
) access time tOE –334 5 ns
Output hold from address change tOH 2–3 3 3 ns 5
CE
Lo w to output in low Z tCLZ 0–0 –0 0 ns 4, 5
CE
Low to output in high Z tCHZ –334 5 ns 4, 5
OE
Low to output in low Z tOLZ 0–00 0 ns 4, 5
OE
High to output in high Z tOHZ –334 5 ns 4, 5
Power up time tPU 0–0 –0 0 ns 4, 5
Power down time tPD 10 12 15 20 ns 4, 5
Undefined/don’t careFalling inputRising input
Address
D
OUT
Data valid
t
OH
t
AA
t
RC
current
Supply
OE
D
OUT
t
OE
t
OLZ
t
ACE
t
CHZ
t
CLZ
t
PU
t
PD
I
CC
I
SB
50% 50%
Data valid
t
RC1
CE
t
OHZ
®
AS7C1025A
AS7C31025A
2/6/01; V.0.9 Alliance Semiconductor P. 5 of 8
Write cycle (over the operating range)11
Write waveform 1 (WE controlled)10,11
Write waveform 2 (CE controlled)10,11
Parameter Symbol
-10 -12 -15 -20
Unit NotesMin Max Min Max Min Max Min Max
Write cycle time tWC 10 12 15 20 ns
Chip enable (
CE
) to write end tCW 8 10 12 12 ns
Address setup to write end tAW 891012ns
Address setup time tAS 0000ns
Write pulse width tWP 78912ns
Address hold from end of write tAH 0000ns
Data valid to write end tDW 56810ns
Data hold time tDH 0000ns4, 5
Write enable to output in high Z tWZ 6– 6 6 8 ns 4, 5
Output active from write end tOW 1112ns4, 5
t
AW
t
AH
t
WC
Address
WE
D
OUT
t
DH
t
OW
t
DW
t
WZ
t
WP
t
AS
Data valid
D
IN
t
AW
Address
CE
WE
D
OUT
t
CW
t
WP
t
DW
t
DH
t
AH
t
WZ
t
WC
t
AS
Data valid
D
IN
®
AS7C1025A
AS7C31025A
2/6/01; V.0.9 Alliance Semiconductor P. 6 of 8
Data retention characteristics (over the operating range)
Data retention waveform
AC test conditions
Notes
1During V
CC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2 This parameter is sampled, but not 100% tested.
3 For test conditions, see AC Test Conditions, Figures A, B, and C.
4t
CLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured ±500mV from steady-state voltage.
5 This parameter is guaranteed, but not 100% tested.
6WE
is High for read cycle.
7CE
and OE are Low for read cycle.
8 Address valid prior to or coincident with CE transition Low.
9 All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 NA.
13 C=30pF, except all high Z and low Z parameters, where C=5pF.
Parameter Symbol Test conditions Min Max Unit
VCC for data retention VDR VCC = 2.0V
CE
VCC – 0.2V
VIN VCC – 0.2V or
VIN 0.2V
2.0 V
Data retention current ICCDR 500 µA
Chip enable to data retention time tCDR 0–ns
Operation recovery time tRtRC –ns
Input leakage current | ILI | –1µA
V
CC
CE
t
R
t
CDR
Data retention mode
V
CC
V
CC
V
DR
2.0V
V
IH
V
IH
V
DR
255W
Output load: see Figure B or Figure C.
Input pulse level: GND to 3.0V. See Figure A.
Input rise and fall times: 2 ns. See Figure A.
Input and output timing reference levels: 1.5V.
C(14)
320W
D
OUT
GND
+3.3V
168W
Thevenin equivalent:
D
OUT
+1.728V (5V and 3.3V)
Figure C: 3.3V Output load
255W C(14)
480W
D
OUT
GND
+5V
Figure B: 5V Output load
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2 ns
®
AS7C1025A
AS7C31025A
2/6/01; V.0.9 Alliance Semiconductor P. 7 of 8
Package dimensions
Symbol
32-pin TSOP II (mm)
Min Max
A–1.2
A1 0.05 0.15
b0.3 0.52
C0.12 0.21
D20.82 21.08
E1 10.03 10.29
E11.56 11.96
e1.27 BSC
L0.40 0.60
ZD 0.95 REF.
α
32-pin TSOP II
NN/2+1
1N/2
D
E1 E
L
αc
ZD
cbA1
A
Seating plane
eD
E1
Pin 1
b
B
A1
A2
c
E
Seating
Plane
E2
A
32-pin SOJ
300 mil/400 mil
Symbol
32-pin SOJ
300 mil
32-pin SOJ
400 mil
Min Max Min Max
A-0.145-0.145
A1 0.025 - 0.025 -
A2 0.086 0.105 0.086 0.115
B0.026 0.032 0.026 0.032
b0.014 0.020 0.015 0.020
c0.006 0.013 0.007 0.013
D0.820 0.830 0.820 0.830
E0.250 0.275 0.360 0.380
E1 0.292 0.305 0.395 0.405
E2 0.330 0.340 0.435 0.445
e0.050 BSC 0.050 BSC
®
AS7C1025A
AS7C31025A
© Copyright Alliance S em iconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trad em ar ks or regis tered trad emar ks of A llianc e. A ll oth er b ra nd and
product names may be the trademarks of their respective companies. Alliance reserv es th e rig ht to m ak e ch an ges t o this doc um e nt and its pr odu cts at a ny time with out no tice. A llian ce assum e s no
responsibility fo r any erro r s that m ay app ea r in this do cume nt. T h e d ata con tain ed h ere in re pr esent s Allian ce ’s best data an d /or e stim ates a t the ti me of is suan ce. A l liance r eser ves th e righ t to
change or correct this data at any tim e, without notice. If the product described herein is under development, significant changes to the se specif icatio ns are pos sible. T h e in forma tion in this
product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or
customer . A llian ce d oe s not a ssum e any respo ns ibility or liability arisi ng o ut o f th e ap plic ation or u se o f any product described herein, and disclaims any express or implied warranties related to
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against all claims arising from such use.
2/6/01; V.0.9 Alliance Semiconductor P. 8 of 8
Ordering codes
Part numbering system
Package \
Access time Voltage Temperature 10 ns 12 ns 15 ns 20 ns
TSOP II
5V Commercial AS7C1025A-10TC AS7C1025A-12TC AS7C1025A-15TC AS7C1025A-20TC
Industrial AS7C1025A-10TI AS7C1025A-12TI AS7C1025A-15TI AS7C1025A-20TI
3.3V Commercial AS7C31025A-10TC AS7C31025A-12TC AS7C31025A-15TC AS7C31025A-20TC
Industrial AS7C31025A-10TI AS7C31025A-12TI AS7C31025A-15TI AS7C31025A-20TI
300-mil SOJ
5V Commercial AS7C1025A-10TJC AS7C1025A-12TJC AS7C1025A-15TJC AS7C1025A-20TJC
Industrial AS7C1025A-10TJI AS7C1025A-12TJI AS7C1025A-15TJI AS7C1025A-20TJI
3.3V Commercial AS7C31025A-10TJC AS7C31025A-12TJC AS7C31025A-15TJC AS7C31025A-20TJC
Industrial AS7C31025A-10TJI AS7C31025A-12TJI AS7C31025A-15TJI AS7C31025A-20TJI
400-mil SOJ
5V Commercial AS7C1025A-10JC AS7C1025A-12JC AS7C1025A-15JC AS7C1025A-20JC
Industrial AS7C1025A-10JI AS7C1025A-12JI AS7C1025A-15JI AS7C1025A-20JI
3.3V Commercial AS7C31025A-10JC AS7C31025A-12JC AS7C31025A-15JC AS7C31025A-20JC
Industrial AS7C31025A-10JI AS7C31025A-12JI AS7C31025A-15JI AS7C31025A-20JI
AS7C X 1025 –XX X X
SRAM
prefix
Blank=5V CMOS
3=3.3V CMOS
Device
number
Access
time
Package:
T = TSOP II
J = SOJ
Temperature range
C = Commercial, 0°C to 70°C
I = Industrial, -40°C to 85°C