High Speed GaAlAs Infrared Emitter OPE5587 The OPE5587 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. DIMENSIONS (Unit : mm) 5.7 5.0 APPLICATIONS * Emitter of IrDA * IR Audio and Telephone * High speed IR communication * IR LANs * Available for wireless digital data transmission 24.0 Min 2.0 Min 2-0.5 8.7 7.7 1.3 Max FEATURES * Ultra high-speed : 25ns rise time * 880nm wavelength * Narrow beam angle * Low forward voltage * High power and high reliability * Available for pulse operating 2.5 Anode Cathode Tolerance : 0.2mm STORAGE * Condition : 5C~35C,R.H.60% * Terms : within 3 months from production date * Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS (Ta=25C ) Item Symbol Rating Unit Power Dissipation PD 150 Forward current IF 100 IFP 1.0 A Pulse forward current 1 Reverse voltage VR 4.0 Operating temp. Topr. -25~ +85 C Tsol. 260. C Soldering temp. 2 1 .Duty ratio = 1/100, pulse width=0.1ms. 2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Symbol Forward voltage VF Reverse current IR Capacitance Ct Radiant intensity Ie Peak emission wavelength p Spectral bandwidth 50% Half angle Optical rise & fall time(10%~90%) Cut off frequency tr/tf *3 fc *3 . 10logPo(fc MHz)/Po(0.1 MHz)=-3 13 (Ta=25C) Max. Unit 2.0 V 10 / deg. Conditions IF=50 VR=4V f=1 IF=50 IF=50 IF=50 IF=50 Min. 40 Typ. 1.5 20 90 880 45 10 IF=50 IF 25/15 ns 14 MHz OPE5587 High Speed GaAlAs Infrared Emitter FORWARD CURRENT Vs. AMBIENT TEMP. Ta=25 Ta=25 200 100 50 30 100 80 10 5 3 60 40 1 0.5 0.3 0.1 20 0 -20 RADIANT INTENSITY Vs. FORWARD CURRENT. 0 20 40 60 80 Ambient Temperature Ta( ) 1 100 RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. 1.0 IF=50mA Ta=25 0.8 3 2 0.6 1 0.8 0.5 0.3 0.2 0.1 0.4 0.2 -20 0 20 40 60 80 100 0.0 700 Ambient Temperature Ta( ) 100 3 5 10 30 50 100 200 500 Forward Current IF(mA) FORWARD CURRENT Vs. FORWARD VOLTAGE 50 750 800 850 900 950 Emission Wavelength (nm) ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25 Ta=25 30 20 -30 -10 0 10 20 30 40 -40 -50 10 5 4 3 2 1 1.0 -20 50 -60 1.1 1.2 1.3 1.4 Forward Voltage VF(V) 1.5 1.6 14 60 -70 70 -80 -90 1.0 80 90 1.0 0.5 0 0.5 Relative Radiant intensity