13
High Speed GaAlAs Infrared Emitter
OPE5587
The OPE5587 is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm)
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
• Ultra high-speed : 25ns rise time
• 880nm wavelength
• Narrow beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS (Ta=25°C )
Item Symbol Rating Unit
Power Dissipation PD150
Forward current IF100
Pulse forward current 1IFP1.0 A
Reverse voltage VR4.0
Operating temp. Topr. -25~ +85
°
C
Solderin
g
tem
p
. 2 Tsol. 260
.
°
C
1.Duty ratio = 1/100, pulse width=0.1ms.
2.Lead Soldering Temperature (2
mm
from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS (Ta=25°C)
Item Symbol Conditions Min. Typ. Max. Unit
Forward voltage VFIF=50 1.5 2.0 V
Reverse current IRVR=4V10
µ
Capacitance Ct f=1
20
Radiant intensity Ie IF=50 40 90 /
Peak emission wavelength pIF=50 880
Spectral bandwidth 50% IF=50 45
Half angle I
F=50 ±10 deg.
Optical rise & fall time(10%~90%) tr/tf IF=50 25/15 ns
Cut off frequency *3 fc IF
14
MHz
*3. 10logPo(fc
MHz
)/Po(0.1
MHz
)=-3
2-0.5
24.0 Min
Anode
Cathode
8.7
7.7
1.3 Max
2.5
2
.0
Min
5.7
5.0
Tolerance : ±0.2m
m
14
High Speed GaAlAs Infrared Emitter OPE5587
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
1.0
0.8
0.6
0.4
0.2
0.0
700 750 800 850 900 950
Emission Wavelen
g
th
(
nm
)
Ta=25
3
2
1
0.8
0.5
0.3
0.2
0.1
-20 0 20 40 60 80 100
Ambient Temperature Ta(
)
IF=50mA
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
20
°
30
°
40
°
50
°
60
°
70
°
80
°
-20
°
-30
°
-40
°
-50
°
-60
°
-70
°
-80
°
-90
°
-10
°
10
°
0
°
1.0 0.5 0 0.5 1.0
90
°
Relative Radiant intensity
Ta=25
FORWARD CURRENT Vs.
AMBIENT TEMP.
100
80
60
40
20
0
-20 0 20 40 60 80 100
Ambient Temperature Ta(
)
RADIANT INTENSITY Vs.
FORWARD CURRENT.
Ta=25
200
100
50
30
10
5
3
1
0.5
0.3
0.1 1 3
5
10 30
5
0 100 2
00 500
Forward Current IF(mA)
Ta=25
FORWARD CURRENT Vs.
FORWARD VOLTAGE
100
50
30
20
10
5
4
3
2
1
1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward Voltage VF(V)
Ta=25
