FW146-TL-E - ON SEMICONDUCTOR

FSS172

No.8286-1/4

Features

•Low ON-resistance.

•Ultrahigh-speed switching.

•4V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS --30 V

Gate-to-Source Voltage VGSS ±20 V

Drain Current (DC) ID--4.5 A

Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --18 A

Allowable Power Dissipation PDMounted on a ceramic board (1200mm2✕0.8mm) 1.4 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V

Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0V --1 µA

Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0V ±10 µA

Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V

Forward T ransfer Admittance yfsVDS=--10V, ID=--4.5A 3.9 6.6 S

RDS(on)1 ID=--4.5A, VGS=--10V 48 63 mΩ

Static Drain-to-Source On-State Resistance

RDS(on)2 ID=--4A, VGS=--4.5V 82 115 mΩ

RDS(on)3 ID=--4A, VGS=--4V 95 135 mΩ

Marking : S172 Continued on next page.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN8286A

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

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50907 TI IM TC-00000685 / 70505PE MS IM TB-00001350

SANYO Semiconductors

DATA SHEET

FSS172 P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

FSS172

No.8286-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Input Capacitance Ciss VDS=--10V, f=1MHz 590 pF

Output Capacitance Coss VDS=--10V, f=1MHz 120 pF

Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 115 pF

Turn-ON Delay T ime td(on) See specified Test Circuit. 8 ns

Rise T ime trSee specified Test Circuit. 80 ns

Turn-OFF Delay Time td(off) See specified Test Circuit. 55 ns

Fall T ime tfSee specified Test Circuit. 62 ns

Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4.5A 12.8 nC

Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4.5A 1.5 nC

Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4.5A 4.3 nC

Diode Forward Voltage VSD IS=--4.5A, VGS=0V --0.87 --1.5 V

Package Dimensions Switching Time Test Circuit

unit : mm (typ)

7005-002

5.0

4.4

6.0 0.3

1.5

1.8 MAX

0.1

0.595 1.27

0.2

0.43

1 : Source

2 : Source

3 : Source

4 : Gate

5 : Drain

6 : Drain

7 : Drain

8 : Drain

SANYO : SOP8

ID -- VDS

IT09620

ID -- VGS

IT09621

0--3.5--0.5

--4.5

--2.5

--3.0

--3.5

--4.0

--2.0

--1.5

--1.0

--1.0--0.2 --0.3 --0.4--0.1 --0.5 --0.6 --0.7 --0.8 --0.9

--0.5

--4.5

--4.0

--3.5

--3.0

--1.0 --1.5 --2.0 --2.5 --3.0

--2.5

--2.0

--1.5

--1.0

--0.5

10.0V

--6.0V

--8.0V

--4.0V

--3.0

VGS= --2.5V

--25°C

Ta=75°C

VDS= --10V

--4.5

--5.0V

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- A

PW=10µs

D.C.≤1%

P.G 50Ω

ID= --4.5A

RL=3.33Ω

VDD= --15V

VOUT

FSS172

VIN

--10V

VIN

FSS172

No.8286-3/4

--10

--1.0

--0.01

--0.1

223 5 23 57

--0.01 --0.1 2357

--1.0 IT09629

PW≤10µs

Operation in this area

is limited by RDS(on).

1ms

10ms

100ms

100µs

ID= --4.5A

IDP= --18A

DC operation

357

--10

100

1000

--30--5 --15 --20 --25--10

Ciss, Coss, Crss -- VDS

IT09627

SW Time -- ID

IT09626

IT09625

--0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1

--0.1

--10

--1.0

IS -- VSD

IT09624

yfs -- ID

--25

f=1MHz

Ciss

Coss

Crss

Ta=75°C

--0.01 --0.1 23 5723 57 5

--1.0 --10

723

0.1

1.0

VDS= --10V

Ta=

75°C

VGS=0V

100

1.0

1000

--0.01 --0.1 23 5723 57 57

--1.0 --10

VDD= --15V

VGS= --10V

td(off)

td(on)

A S O

VGS -- Qg

IT09628

--1

--2

--3

--4

--5

--6

--7

--8

134 678 1011 1295

--10

--9

123

VDS= --10V

ID= --4.5A

Total Gate Charge, Qg -- nC

Gate-to-Source Voltage, VGS -- V

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Ta=25°C

Single pulse

Mounted on a ceramic board (1200mm

✕0.8mm)

Drain Current, ID -- A

Forward T ransfer Admittance, 

fs -- S

Diode Forward Voltage, VSD -- V

Source Current, IS -- A

Drain Current, ID -- A

Switching Time, SW Time -- ns

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- pF

RDS(on) -- VGS

IT09622

RDS(on) -- Ta

IT09623

200

180

--16--2 --4 --6 --8 --10 --12 --60 --40 --20 0 20 40 60 80 100 120 140 160

--14

160

140

120

100

180

160

100

140

120

ID=

4.0

A, VGS=

4.5

ID=

--4.0

A, VGS=

4.0

Ta=25°C

ID= --4A

--4.5A

ID=

4.5

A, VGS=

10.0

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Ambient Temperature, Ta -- °C

Gate-to-Source Voltage, VGS -- V

FSS172

No.8286-4/4

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's

intellctual property rights which has resulted from the use of the technical information and products mentioned

above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

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without the prior written consent of SANYO Semiconductor Co.,Ltd.

Note on usage : Since the FSS172 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

This catalog provides information as of May, 2007. Specifications and information herein are subject

to change without notice.

PD -- Ta

IT09630

020 40

0.2

0.8

0.6

0.4

1.0

80 100 120

1.2

1.3

1.4

1.5

140 160

Ambient Temperature, Ta -- °C

Allowable Power Dissipation, PD -- W

Mounted on a ceramic board (1200mm

✕0.8mm)