TIP41C NPN PLANAR TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R203-008.C
ABSOLUTE MAXIMUM RATINGS (T c=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
DC 6 A
Collector Current Pulse IC 10 A
Base Current IB 2 A
Tc=25°C 65 W
Collector Dissipation Ta=25°C PC 2 W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage (Note) VCEO I
C=30mA, IB=0 100 V
Collector Cutoff Current ICEO V
CE=60V, IB=0 0.7 mA
Collector Cutoff Current ICES V
CE=100V, VEB=0 400 μA
Emitter Cutoff Current IEBO V
EB=5V, Ic=0 1 mA
Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=6A, IB=600mA 1.5 V
Base-Emitter On Voltage (Note) VBE(ON) I
C=6A, VCE=4V 2.0 V
hFE1 I
C=300mA, VCE=4V 30
DC Current Gain (Note) hFE2 I
C=3A, VCE=4V 15 75
Current Gain Bandwidth Product fT V
CE=10V, Ic=500mA, f=1MHz 3 MHz
Note: Pulse Test: PW≦300μs, Duty Cycle≦2%