RA08H1317M-01 - Mitsubishi Electric Semiconductor

MITSUBISHI RF MOSFET MODULE

RA08H1317M

135-175MHz

12.5V PORTABLE/MOBILE RADIO

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

The RA08H1317M is a 8-watt RF MOSFET Amplifier Module

for 12.5-volt portable/ mobile radios that operate in the 135- to

175-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (VGG=0V), only a small leakage current flows into the drain

and the RF input signal attenuates up to 60 dB. The output power

and drain current increase as the gate voltage increases. With a

gate voltage around 2.5V (minimum), output power and drain

current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

VGG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

(IDD≅0 @ VDD=12.5V, VGG=0V)

• Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW

• ηT>40% @ Pout=8W (VGG control), VDD=12.5V, Pin=20mW

• Broadband Frequency Range: 135-175MHz

• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain current

with the gate voltage and controlling the output power with the

input power

ORDERING INFORMATION:

ORDER NUMBER SUPPLY FORM

RA08H1317M-E01

RA08H1317M-01

(Japan - packed without desiccator)

Antistatic tray,

25 modules/tray

BLOCK

DIAGRAM

1 RF Input (Pin)

2 Gate Voltage (VGG), Power Control

3 Drain Voltage (VDD), Battery

4 RF Output (Pout)

5 RF Ground (Case)

MITSUBISHI RF POWER MODULE

RA08H1317M

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MAXIMUM RATINGS

(Tcase=+25°C, unless otherwise specified)

SYMBOL PARAMETER CONDITIONS RATING UNIT

VDD Drain Voltage VGG<3.5V 16 V

VGG Gate Voltage VDD<12.5V, Pin=0mW 4 V

Pin Input Power 40 mW

Pout Output Power f=135-175MHz,

ZG=ZL=50Ω 10 W

Tcase(OP) Operation Case Temperature Range -30 to +90 °C

Tstg Storage Temperature Range -40 to +110 °C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS

(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

SYMBOL

PARAMETER CONDITIONS MIN TYP MAX UNIT

f Frequency Range 135 175 MHz

Pout Output Power VDD=12.5V,VGG=3.5V, Pin=20mW 8 W

ηT Total Efficiency 40 %

2fo 2nd Harmonic -25 dBc

ρin Input VSWR 4.4:1 —

IGG Gate Current

Pout=8W (VGG control),

VDD=12.5V,

Pin=20mW 1 mA

— Stability VDD=5-13.2V, Pin=10-30mW, Pout<9W (VGG control),

Load VSWR=4:1 No parasitic oscillation —

— Load VSWR Tolerance VDD=13.2V, Pin=20mW, Pout=8W (VGG control),

Load VSWR=20:1 No degradation or

destroy —

All parameters, conditions, ratings, and limits are subject to change without notice.

MITSUBISHI RF POWER MODULE

RA08H1317M

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

OUTPUT POWER, TOTAL EFFICIENCY,

and INPUT VSWR versus FREQUENCY

130 140 150 160 170 180

FREQUENCY f(MHz)

OUTPUT POWER P out (W)

INPUT VSWR ρin (-)

100

120

140

TOTAL EFFICIENCY

ηT(%)

VDD=12.5V

Pin=20mW

Pout @VGG=3.5V

T @Pout=8W

in @Pout=8W

TYPICAL PERFORMANCE

(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

Now Preparing

MITSUBISHI RF POWER MODULE

RA08H1317M

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

TYPICAL PERFORMANCE

(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

Now Preparing

MITSUBISHI RF POWER MODULE

RA08H1317M

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ELECTROSTATIC SENSITIVE DEVICE

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OUTLINE

DRAWING

(mm)

1 RF Input (Pin)

2 Gate Voltage (VGG)

3 Drain Voltage (VDD)

4 RF Output (Pout)

5 RF Ground (Case)

(4.4)

6.1 ±1

13.7 ±1

18.8 ±1

23.9 ±1

30.0 ±0.2

26.6 ±0.2

21.2 ±0.2

6.0 ±1 2.3 ±0.4

(1.7)

3.0 ±0.2

Ø0.45 ±0.15

3.5 ±0.2

1.5 ±0.2

2-R1.5 ±0.1

6.0 ±0.2

10.0 ±0.2

3 2

3.0 ±0.2

6.0 ±0.2

7.4 ±0.2

(5.4)

MITSUBISHI RF POWER MODULE

RA08H1317M

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ELECTROSTATIC SENSITIVE DEVICE

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1 RF Input (Pin)

2 Gate Voltage (VGG)

3 Drain Voltage (VDD)

4 RF Output (Pout)

5 RF Ground (Case)

C1, C2: 4700pF, 22uF in parallel

Directional

Coupler Attenuator

Power

Meter

Spectrum

Analyzer

Signal

Generator Attenuator

Pre-

amplifier

Power

Meter

Directional

Coupler

DUT

ZG=50

Ω

ZL=50Ω

- +

DC Power

Supply VGG

+ -

DC Power

Supply VDD

TEST BLOCK DIAGRAM

Attenuator

EQUIVALENT CIRCUIT

MITSUBISHI RF POWER MODULE

RA08H1317M

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PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:

Construction:

This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap

is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and

coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and

matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.

Following conditions must be avoided:

a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)

b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)

c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)

d) Frequent on/off switching that causes thermal expansion of the resin

e) ESD, surge, overvoltage in combination with load VSWR, and oscillation

ESD:

This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.

Mounting:

Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may

cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later

when thermal expansion forces are added).

A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce

the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.

The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.

M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.

Soldering and Defluxing:

This module is designed for manual soldering.

The leads must be soldered after the module is screwed onto the heat sink.

The soldering temperature must be lower than 260°C for a maximum of 10 seconds, or lower than 350°C for a maximum

of three seconds.

Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in

the coating of the transistor chips which can lift off the bond wires).

Thermal Design of the Heat Sink:

At Pout=8W, VDD=12.5V and Pin=20mW each stage transistor operating conditions are:

Stage Pin

(W) Pout

(W) Rth(ch-case)

(°C/W) IDD @ ηT=40%

(A) VDD

(V)

1st 0.02 1.5 4.0 0.3

2nd 1.5 8.0 2.4 1.32 12.5

The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:

Tch1 = Tcase + (12.5V x 0.3A – 1.5W + 0.02W) x 4.0°C/W = Tcase + 9.1 °C

Tch2 = Tcase + (12.5V x 1.32A – 8.0W + 1.5W) x 2.4°C/W = Tcase + 24.0 °C

For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient

temperature Tair=60°C and Pout=8W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout +

Pin ) of the heat sink, including the contact resistance, is:

Rth(case-air) = (90°C - 60°C) / (8W/40% – 8W + 0.02W) = 2.50 °C/W

When mounting the module with the thermal resistance of 2.50 °C/W, the channel temperature of each stage transistor

is: Tch1 = Tair + 39.1 °C

Tch2 = Tair + 54.0 °C

The 175°C maximum rating for the channel temperature ensures application under derated conditions.

MITSUBISHI RF POWER MODULE

RA08H1317M

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Output Power Control:

Depending on linearity, the following two methods are recommended to control the output power:

a) Non-linear FM modulation:

By the gate voltage (VGG).

When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage

current flows from the battery into the drain.

Around VGG=2.5V, the output power and drain current increases substantially.

Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available.

b) Linear AM modulation:

By RF input power Pin.

The gate voltage is used to set the drain’s quiescent current for the required linearity.

Oscillation:

To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,

a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.

When an amplifier circuit around this module shows oscillation, the following may be checked:

a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?

b) Is the load impedance ZL=50Ω?

c) Is the source impedance ZG=50Ω?

Frequent on/off switching:

In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and

can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced

mechanical stress.

Quality:

Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding

those of mobile radios.

This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios.

Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are

caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but

there is always the pos

sibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property

damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such

as (i) placement of substitutive, auxiliary circuits, (ii) use of non-

flammable material, or (iii) prevention against any

malfunction or mishap.

Keep safety first in your circuit designs!

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