APT20M120JCU3
APT20M120JCU3 – Rev 0 September, 2009
www.microsemi.com 1-5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
A
S
G
D
ISOTOP®
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 1200 V
Tc = 25°C 20
ID Continuous Drain Current Tc = 80°C 15
IDM Pulsed Drain curre nt 104 A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 672 mΩ
PD Maximum Pow er Dissipation Tc = 25°C 543 W
IAR Avalanch e current (repetitive and non repetitive) 14 A
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Power MOS 8™ MOSFET
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
ISOTOP® Buck chopper
MOSFET + SiC chopper diode
Power module
VDSS = 1200V
RDSon = 560mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
A
D
G
S
APT20M120JCU3
APT20M120JCU3 – Rev 0 September, 2009
www.microsemi.com 2-5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VDS =1200V
VGS = 0V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 14A 560 672
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 4 5 V
IGSS Gate – Source Leakage Current VGS = ±30 V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 7736
Coss Output Capacitance 715
Crss Reverse Transfer Capac itance
VGS = 0V
VDS = 25V
f = 1MHz 92
pF
Qg Total gate Charge 300
Qgs Gate – Source Charge 50
Qgd Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 14A 140
nC
Td(on) Turn-on Delay Time 50
Tr Rise Time 31
Td(off) Turn-off Delay Time 170
Tf Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 14A
RG = 2.2Ω 48
ns
SiC chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 32 200
IRM Maximum Reverse Leakage Current VR=1200V Tj = 175°C 56 1000 µA
IF DC Forward Current Tc = 100°C 10 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 10A Tj = 175°C 2.3 3 V
QC Total Capacitive Charge IF = 10A, VR = 600V
di/dt =500A/µs 80 nC
f = 1MHz, VR = 200V 96
C Total Capacitance f = 1MHz, VR = 400V 69 pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Mosfet 0.23
RthJC Junction to Case Thermal Resistance SiC Diode 1.65
RthJA Junction to Ambient (IGBT & Diode) 20 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -40 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (M ounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
APT20M120JCU3
APT20M120JCU3 – Rev 0 September, 2009
www.microsemi.com 3-5
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033) 12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Typical Mosfet Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.00001 0.0001 0.001 0.01 0.1 1 10
rectan gular Pu lse Duration ( Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Source Gate
Drain
Anode
APT20M120JCU3
APT20M120JCU3 – Rev 0 September, 2009
www.microsemi.com 4-5
Low Vo l tage Outp ut Characteristi cs
T
J
=25°C
T
J
=125°C
0
10
20
30
40
0 5 10 15 20
V
DS
, Drain to Sou rce Vo l tage (V)
I
D
, Drain Current (A)
V
GS
=10V
Low V ol tag e Outp ut Characteristics
4.5V
5V
0
5
10
15
20
25
30
0 5 10 15 20 25 30
V
DS
, Drain to Source V ol tag e (V)
I
D
, Drain Current (A)
V
GS
=6, 7, 8 & 9V
T
J
=125°C
Normalized R
DS(on)
vs. Temperature
0
0.5
1
1.5
2
2.5
3
25 50 75 100 125 150
T
J
, Junction Tem peratur e (°C)
R
DSon
, Drain to Source ON resistance
V
GS
=10V
I
D
=14A
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
4
8
12
16
20
0123456
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
> I
D(on)
xR
DS(on)
MAX
250µs pulse test @ <
0.5 duty cycle
Gate Charge vs Gate to Source
V
DS
=240V
V
DS
=600V
V
DS
=960V
0
2
4
6
8
10
12
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
V
GS
, Gate to Source Voltage
I
D
=14A
T
J
=25°C Ciss
Crss
Coss
10
100
1000
10000
0 50 100 150 200
V
DS
, Drain to S our ce Vo l tag e (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Vol tage
APT20M120JCU3
APT20M120JCU3 – Rev 0 September, 2009
www.microsemi.com 5-5
Typical SiC Diode Performance Curve
Maxi mum Effective Transient Thermal Im ped an ce, Ju ncti o n to Case vs Pul se Duratio n
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
4
8
12
16
20
00.511.522.533.5
V
F
Forward Voltag e (V)
I
F
Forward Current (A)
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
25
50
75
100
400 600 800 1000 1200 1400 1600
V
R
Reverse Voltage (V)
I
R
Reverse Current (µA)
Capacitance vs.Reverse Voltage
0
100
200
300
400
500
600
700
1 10 100 1000
V
R
Reverse Voltage
C, Capacitance (pF)
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,74 3 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
