BFP620F Low Noise SiGe:C Bipolar RF Transistor * High gain low noise RF transistor 3 * Based on Infineon's reliable high volume 2 4 1 Silicon Germanium technology * Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NF min = 1.3 dB at 6 GHz * Maximum stable gain Gms = 21 dB at 1.8 GHz Top View 4 Gma = 10 dB at 6 GHz 3 XYs * Pb-free (RoHS compliant) and halogen-free thin small 1 flat package (1.4 x 0.8 x 0.59 mm) with visible leads 2 Direction of Unreeling * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP620F Marking R2s 1=B Pin Configuration 2=E 3=C 4=E - Package - TSFP-4 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 C 2.3 TA = -55 C 2.1 Collector-emitter voltage VCES 7.5 Collector-base voltage VCBO 7.5 Emitter-base voltage VEBO 1.2 Collector current IC 80 Base current IB 3 Total power dissipation1) Ptot 185 mW Junction temperature TJ 150 C Storage temperature TStg mA TS 96C 1T S is -55 ... 150 measured on the emitter lead at the soldering point to the pcb 1 2013-09-09 BFP620F Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 290 K/W Values Unit Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol min. typ. max. 2.3 2.8 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 3 A hFE 110 180 270 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 7.5 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 50 mA, VCE = 1.5 V, pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-09 BFP620F Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 65 - Ccb - 0.12 0.2 Cce - 0.2 - Ceb - 0.45 - AC Characteristics (verified by random sampling) Transition frequency GHz IC = 50 mA, VCE = 1.5 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt - 0.7 - IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt - 1.3 - Gms - 21 - dB Gma - 10 - dB Power gain, maximum stable1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |S21e|2 Transducer gain dB IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 , f = 1.8 GHz - 19.5 - f = 6 GHz - 9.5 - IP3 - 25 - P-1dB - 14 - Third order intercept point at output2) dBm VCE = 2 V, IC = 50 mA, ZS =ZL =50 , f = 1.8 GHz 1dB compression point at output IC = 50 mA, VCE = 2 V, ZS =ZL =50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms 2IP3 value depends on termination of = |S21e / S12e| all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 2013-09-09 BFP620F Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3 200 mW 160 K/W RthJS Ptot 140 120 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 tp Permissible Pulse Load Collector-base capacitance Ccb = (VCB ) Ptotmax/PtotDC = (tp ) f = 1MHz 10 1 0.4 P totmax/ PtotDC pF CCB 0.3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.25 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 1 2 3 4 5 6 V 8 VCB 4 2013-09-09 0 BFP620F Third order Intercept Point IP3=(IC) Transition frequency fT= (IC) (Output, ZS=ZL=50) f = 1GHz VCE = parameter, f =1.8GHz VCE = Parameter in V 30 70 GHz 2.3V dBm 60 1.7V 1 to 2.3 55 20 50 fT IP3 1.4V 15 45 0.8 40 0.8V 10 35 1.1V 30 25 5 20 15 0 10 0.3 0.5 5 -5 0 10 20 30 40 50 60 70 mA 0 0 90 10 20 30 40 50 60 70 80 mA IC 100 IC Power gain Gma, Gms = (IC ) Power Gain Gma, Gms = (f), VCE = 1.5V |S21| = f (f) f = Parameter in GHz VCE = 1.5V, IC = 50mA 50 30 dB dB 0.9 26 40 24 35 1.8 G G 22 20 30 18 2.4 16 3 14 4 12 5 10 6 25 20 |S21| Gma 15 10 8 6 0 Gms 10 20 30 40 50 60 70 mA 5 0 90 IC 1 2 3 4 GHz 6 f 5 2013-09-09 BFP620F Power gain Gma, Gms = (VCE ) Noise figure F = (IC ) IC = 50mA VCE = 1.5V, ZS = ZSopt f = Parameter in GHz 30 dB 3 0.9 24 2.5 1.8 G 20 2.4 2 3 16 4 F [dB] 5 12 1.5 6 8 1 4 f = 6GHz f = 5GHz f = 4GHz f = 3GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz 0.5 0 -4 0.2 0.6 1 1.4 V 1.8 2.6 0 0 VCE Noise figure F = (IC ) VCE = 1.5V, f = 1.8 GHz 10 20 30 40 50 60 70 80 I [mA] c Noise figure F = (f) VCE = 1.5V, ZS = ZSopt 3 2.5 2.5 2 2 IC = 50mA F [dB] F [dB] 1.5 1.5 IC = 5.0mA 1 1 Z = 50 S Z =Z S Sopt 0.5 0.5 0 0 0 10 20 30 40 50 60 70 80 1 Ic [mA] 2 3 4 5 6 7 f [GHz] 6 2013-09-09 BFP620F Source impedance for min. noise figure vs. frequency VCE = 1.5V, IC = 5.0mA/50.0mA 1 1.5 2 0.5 0.4 3 0.3 4 0.2 2.4GHz 5 1.8GHz 3GHz 10 0.1 0.1 0 0.2 0.3 0.4 0.5 1 1.5 4GHz -0.1 2 3 4 5 5GHz -10 6GHz -0.2 Ic = 5.0mA -0.3 -5 -4 -3 I = 50mA -0.4 c -2 -0.5 -1.5 -1 7 2013-09-09 Package TSFP-4 8 BFP620F 2013-09-09 BFP620F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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