2013-09-091
BFP620F
1
2
4
3
Low Noise SiGe:C Bipolar RF Transistor
• High gain low noise RF transistor
• Based on Infineon's reliable high volume
Silicon Germanium technology
• Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
Outstanding noise figure NFmin = 1.3 dB at 6 GHz
• Maximum stable gain
Gms = 21 dB at 1.8 GHz
Gma = 10 dB at 6 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.4 x 0.8 x 0.59 mm) with visible leads
• Qualification report according to AEC-Q101 available
1
34
2
Direction of Unreeling
Top View
XYs
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP620F R2s 1=B 2=E 3=C 4=E - - TSFP-4
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
2.3
2.1
V
Collector-emitter voltage VCES 7.5
Collector-base voltage VCBO 7.5
Emitter-base voltage VEBO 1.2
Collector current IC80 mA
Base current IB3
Total power dissipation1)
TS ≤ 96°C
Ptot 185 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
1TS is measured on the emitter lead at the soldering point to the pcb
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BFP620F
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 290 K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 2.3 2.8 - V
Collector-emitter cutoff current
VCE = 7.5 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 3 µA
DC current gain
IC = 50 mA, VCE = 1.5 V, pulse measured
hFE 110 180 270 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP620F
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 1.5 V, f = 1 GHz
fT- 65 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.12 0.2 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.45 -
Minimum noise figure
IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt
NFmin
-
-
0.7
1.3
-
-
dB
Power gain, maximum stable1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21 - dB
Power gain, maximum available1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
Gma - 10 - dB
Transducer gain
IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
f = 6 GHz
|S21e|2
-
-
19.5
9.5
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 50 mA, ZS=ZL=50 Ω, f = 1.8 GHz
IP3 - 25 - dBm
1dB compression point at output
IC = 50 mA, VCE = 2 V, ZS=ZL=50 Ω, f = 1.8 GHz
P-1dB - 14 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFP620F
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
100
120
140
160
mW
200
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
Ptotmax/ PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 1 2 3 4 5 6 V8
VCB
0
0.05
0.1
0.15
0.2
0.25
0.3
pF
0.4
CCB
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BFP620F
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f =1.8GHz
0 10 20 30 40 50 60 70 mA 90
IC
-5
0
5
10
15
20
dBm
30
IP3
0.8V 1.1V
1.4V
1.7V
2.3V
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = Parameter in V
0 10 20 30 40 50 60 70 80 mA 100
IC
0
5
10
15
20
25
30
35
40
45
50
55
60
GHz
70
fT
1 to 2.3
0.8
0.5
0.3
Power gain Gma, Gms = ƒ(IC)
VCE = 1.5V
f = Parameter in GHz
0 10 20 30 40 50 60 70 mA 90
IC
6
8
10
12
14
16
18
20
22
24
26
dB
30
G
0.9
1.8
2.4
3
4
5
6
Power Gain Gma, Gms = ƒ(f),
|S21|² = f (f)
VCE = 1.5V, IC = 50mA
01234GHz 6
f
5
10
15
20
25
30
35
40
dB
50
G
Gms
Gma
|S21|²
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BFP620F
Power gain Gma, Gms = ƒ (VCE)
IC = 50mA
f = Parameter in GHz
0.2 0.6 1 1.4 1.8 V2.6
VCE
-4
0
4
8
12
16
20
24
dB
30
G
0.9
1.8
2.4
3
4
5
6
Noise figure F = ƒ(IC)
VCE = 1.5V, ZS = ZSopt
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
f = 4GHz
f = 2.4GHz
f = 5GHz
f = 0.9GHz
f = 1.8GHz
f = 6GHz
f = 3GHz
I
c
[mA]
F [dB]
Noise figure F = ƒ(IC)
VCE = 1.5V, f = 1.8 GHz
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
I
c
[mA]
F [dB]
Z
S
= 50Ω
Z
S
= Z
Sopt
Noise figure F = ƒ(f)
VCE = 1.5V, ZS = ZSopt
1 2 3 4 5 6 7
0
0.5
1
1.5
2
2.5
F [dB]
f [GHz]
I
C
= 50mA
I
C
= 5.0mA
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BFP620F
Source impedance for min.
noise figure vs. frequency
VCE = 1.5V, IC = 5.0mA/50.0mA
10.1 0.2 0.3 0.40.5 21.5 3 4 5
0
5
1
−5
−1
10
0.5
1.5
−0.5
−1.5
0.1
−0.1
0.2
2
−0.2
−2
0.3
−0.3
0.4 3
−0.4 −3
4
−4
−10
I
c
= 5.0mA
2.4GHz
3GHz
4GHz
1.8GHz
I
c
= 50mA
6GHz
5GHz
2013-09-098
BFP620F
Package TSFP-4
2013-09-099
BFP620F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
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