Features Patented free-floating silicon technology @ Designed for traction, energy and industrial applications @ Optimum power handling capability Doc. No. 5SYA 1005-02 Dec.95 Blocking Partnumber | 5SSTP 17L5200 5STP 17L5000 5STP 17L4600 | Conditions Vosm Verso 5200 V 5000 V 4600 V f = 5SHz, tp =10ms Vorm Vero 4400 V 4200 V 4000 V f =50Hz, t, =10ms Vrsoi 5700 V 5500 V 5100 V tp= Sms, single pulse losm < 400 mA Vosm lRsm < 400 mA Vesm Ty = 125C dv/dtorit 2000 V/us @ Exp.to 0.67xVprm Vorm/Verm are equal toVosm/Vrsm Values up to Tvj = 110C. Mechanical data Fm | Mounting force nom 50 kN min 45 kN Removable connectors max 60 KN saan vs ETFE Device clamped 100 mis? m Weight 1.35 kg Faston connectors Ds Surface creepage distance 35 mm Ds Air strike distance 14mm ABB Semiconductors AG 91ABB Semiconductors AG 5STP 17L5200 On-state Tay Max. average on-state current 1700 A Half sine wave, Te= 70C trams | Max. RMS on-state current 2670 A 'tsm Max. peak non-repetitive 29000 A tp = 10ms surge current 31000 A | fp =8.3ms Pt Limiting load integral 4205 kA?s | tp = 10 ms 3990 kA?s | fp = 8.3 ms Ty = 125C Vr On-state voltage 1.68 V ly = 2000A Vro Threshold voltage 1.02 V tT Slope resistance 0.320 mQ | ft = 1000 - 3000 A ly Holding current 20-70 mA | Ty = 25C 15-60 mA | Ty = 125C I Latching current 80-300 mA | j= 25C 70-250 mA | fy = 125C Switching di/dtet | Critical rate of rise of on-state 100 A/us | Cont. Vp < 0.67x Vor yj = 125C current Itrm = 3000A f = 50Hz 200 A/us | 60 sec. Ig = 20A t= 0.5us ty Delay time <$ 3.0 us [Vp =0.4xVonm [iro = 2.0A f,= O.5ys ty Turn-off time < 700 us | YP <0-87XVprw|/tRM = 3000A Ty = 125C dvp Adt= 20V/us|VrR > 200V Q Recovery charge min 4800 As di;/dt= -5 A/us max 6200 wAs Triggering Vet Gate trigger voltage 2.6V Ty = 25C It Gate trigger current 400 mA_ | Ty = 25C Vop Gate non-trigger voltage 0.3V | Vp =0.4xVorm leo Gate non-trigger DC current 10 MA | Vp = 0.4xVpru VecmM Peak forward gate voltage 12 V leom Peak forward gate current 10 A VeGM Peak reverse gate voltage 10 V Po Gate power losses 3 W Doc. No. 5SYA 1005-02 Dec.95ABB Semiconductors AG 5STP 17L5200 Thermal Tyjmax |Max. junction temperature 125 C Tyj stg Storage temperature range -40.. ..150C Rtnuc Thermal resistance junction 24 K/kW | Anode side cooled to case 24 K/kW | Cathode side cooled 12 K/kW | Double side cooled RthcH | Thermal resistance case to 10 K/kW | Single side cooled heat sink . 5 K/kKW | Double side cooled Zim (K/KW) 16 Analytical function for transient thermal impedance: 14 180 sin add 12 180 ri add 120 Fr add r 10 60 1m. add t/t; 8 Zthsc ~ > Ri(1 -e ) 6 i=1 4 1 2 3 4 : - Rj (KAW) 0.0053 0.0051 0.0016 10 5 10 5 10" 5 10 5 10 5 10 t; (Ss) 2.1838 | 0.4151 | 0.0324 t(s) Fig.1 Transient thermal impedance, junction to case. i, (A) . . fr 4000 Voltage drop model: V;=A+B*i-+C*ln(74+1)+D* i+ Valid forl; = 500 - 4000A 3600 A B Cc D 3200 1.309000 | 0.000080 | -0.125000 | 0.026000 2800 1, (kA) 2400 24 2000 20 1600 16 1200 12 800 8 400 4 0 0 08 1.0 1.2 14 #16 18 20 2.2 2.4 0 2 4 6 8 10 12 V,(V) .V, (V) Fig.2 On-state characteristics. Fig.3 On-state characteristics. Doc. No. 5SYA 1005-02 Dec.95 93ABB Semiconductors AG 5STP 17L5200 P, (W) Tous (C} 4000 130 Double sided cooling 125 3500 120 4 be | Lope ff B08 A 3000 115 Ne tet | | 180 sine to Le 120 M1 110 =< 2500 105 \ 100 \ N . N a: MM , WN 2000 1500 1000 ne AYN ib 75 z o o ! T= 125C \ \ | e wo 0 70 ; 0 200 600 1000 1400 1800 0 500 1000 1500 2000 2500 ray (A) lrav (A) Fig.4 On-state power loss vs mean on-state current. Fig.5 Max. permissible case temperature vs mean Turn-on losses excluded. on-state current. lism (kA) *t(MAs) Irs (KA) 60 1 I T7114 PSE T5200 CV 1 2 30 7] lism! Pe: ! 55 7 } 1. V,= 0 3.V,= 0 ri 2, Vy= 0.6xV 4. Vq= 0.6xV + BO me aM EE 10 25 1 me } 45 4 4 Li} ity g Ko 404 oN \ L fib s 20 + 7 48 35 - N N : 1 / 7 NI / 30 iN H+} 6 15 25 : Ay- 5 4 20 +h - iN +h 4 104 LA : 15 4 4 Ps Ra Le 3 - enn i y 109 re 4 5 poet te i haa bad 1 L Lh 0 1 t m7 0 0 T T T 1 2 5 10 20 50-100 1 2 5 10-20 50 100 t, (ms) n, Fig.6 Surge on-state current vs pulse length. Half-sine Fig.7 Surge on-state current vs number of pulses. wave. Half-sine wave, 10ms, 50Hz. 94 Doc. No. 5SYA 1005-02 Dec.95ABB Semiconductors AG 5STP 17L5200 Veg (V) 4.0 3.0 2.0 1.0 Vig (V) 7 -~---75Wt, = 1008 pmax 7 7 20W tonax = IMs = 10ms OoO- NM WH BO Oo 0 0 0.1 0.22 0.3 0.4 0.5 0.6 0.7 0.809 1.0 leq (A} Fig.8 Gate trigger characteristics. Fig.9 Max. peak gate power loss. Q (wAs) law (A) 3 10 Irae = 3O000A ZT = Tenax 4 20 30 -di,/dt (A/ys) 1 2 3 4 5 7F 10 Ira = 3O00A T, =T vy vimax NY WwW fo ws Na o oho si 1 2 394 5 7 10 20-30 -di,/dt (A/ys) Fig.10 Recovery charge vs decay rate of on-stat current. Turn-off time, typical parameter relationship Fig.11 Peak reverse recovery current vs decay rate of on-state current. tite: 1.1 ta/tar 1.3 1.0 1.2 0.3 0.8 0.7 1.0 0.6 0.5 0.9 100 110 120 130 T,, (C) 7O 80 930 0 4 8 12 16 20 24 28 32 -diy/dt (A/ys) taftay 2.2" 2.04- 1.8 1.6 1.4 1.2 1.0 0.8 5STP TH5I00 0.6 T 10 23571023 57 10 dv/dt (Vis) Fig.12 tq/tqi = f(Ty) Fig.13 tg/tqi = f(-di/dt) tai: at normalized value (see page 2). tg : at varying conditions. Fig.14 tg/tqi = f(dv/dt) Doc. No. 5SYA 1005-02 Dec.95 95ABB Semiconductors AG Turn-on and Turn-off losses 5STP 17L5200 W,,, (Ws/pulse) 1.2 ms 2ms 5ms 10ms 1.0 t, t to i 0.8 0.6 0.4 0.2 0 o 1 2 3 4 5 6 7 8 1, (kA) W,,, (Ws/pulse) 0.7 di/dt= 10A/, 0.6 4didi/dt= 5A/ di/dt= 2A/ 0.5 +d | 0.4 0.3 0.2 0.1 0 o. 1 2 3 4 5 66 7 8 I, (kA) Fig.15 Won = f(IT,tp), Tvj = 125C. Half sinusodial waves. Fig.16 Won = f(IT,di/dt), Tvj = 125C. Rectangular waves. Wor (Ws/pulse) 8 7 | | tram = 8000A lana = GOOOA 6 4 Lima = 4000A 5 ~ 4 3 2 1 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Vo (kV) Wor (Ws/pulse) 14H gildt= 10A/us 12 di/dt= 5A/us di/dt= 2A/us 10-4 di/dt= 1A/us 8 6 4 2 0 O 04 #08 12 16 20 24 28 Vy (kV) Fig.17 Woff = f(Vo,IT), Tyj = 125C. Half sinusodial waves. Tp= 10ms. AL 1 ED PA > aD Fig.18 Woff = f(Vo,di/dt) Tvj = 125C. Rectangular waves. \ | Vo Varm Prot = Pr +Won* f +Wort * f Wort at VRRM/ Vo = 1.3-1.5 . Py + J it * vr dt ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6300 Fax +41 (0)62 888 6306 Doc. No. 5SYA 1005-02 Dec.95