MRF1517NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large- signal, common source amplifier applications in 7.5 volt
portable FM equipment.
•Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 14 dB
Efficiency — 70%
•Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Features
•Characterized with Series Equivalent Large-Signal
Impedance Parameters
•Excellent Thermal Stability
•N Suffix Indicates Lead- Free Terminations. RoHS Compliant.
•In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage (1) VDSS -0.5, +25 Vdc
Gate-Source Voltage VGS ±20 Vdc
Drain Current — Continuous ID4 Adc
Total Device Dissipation @ TC = 25°C (2)
Derate above 25°C
PD62.5
0.50
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ150 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (3) Unit
Thermal Resistance, Junction to Case RθJC 2°C/W
Table 3. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 °C
1. Not designed for 12.5 volt applications.
2. Calculated based on the formula PD =
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1517N
Rev. 7, 6/2009
Freescale Semiconductor
Technical Data
MRF1517NT1
520 MHz, 8 W, 7.5 V
LATERAL N -CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
TJ–TC
RθJC
Freescale Semiconductor, Inc., 2008- 2009. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF1517NT1
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 120 µAdc)
VGS(th) 1 1.7 2.1 Vdc
Drain- Source On -Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on) — 0.5 — Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs — 0.9 — S
Dynamic Characteristics
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss — 66 — pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss — 38 — pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss — 6 — pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps — 14 — dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η— 70 — %
MRF1517NT1
3
RF Device Data
Freescale Semiconductor
Figure 1. 480 - 520 MHz Broadband Test Circuit
VDD
C7 R3
C8
C6
R2
RF
INPUT
RF
OUTPUT
Z2 Z3
Z6
C1
C3
C14
DUT
Z7 Z9 Z10
Z4 Z5
L1
Z8 N2
C18
B2
N1
+
C13
C4
C12
B1, B2 Short Ferrite Beads, Fair Rite Products
(2743021446)
C1 300 pF, 100 mil Chip Capacitor
C2, C3, C4, C10,
C12, C13 0 to 20 pF, Trimmer Capacitors
C5, C11 43 pF, 100 mil Chip Capacitors
C6, C18 120 pF, 100 mil Chip Capacitors
C7, C15 10 µF, 50 V Electrolytic Capacitors
C8, C16 0.1 µF, 100 mil Chip Capacitors
C9, C17 1,000 pF, 100 mil Chip Capacitors
C14 330 pF, 100 mil Chip Capacitor
L1 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mounts
R1 15 Ω, 0805 Chip Resistor
R2 1.0 kΩ, 1/8 W Resistor
R3 33 kΩ, 1/2 W Resistor
Z1 0.315″ x 0.080″ Microstrip
Z2 1.415″ x 0.080″ Microstrip
Z3 0.322″ x 0.080″ Microstrip
Z4 0.022″ x 0.080″ Microstrip
Z5, Z6 0.260″ x 0.223″ Microstrip
Z7 0.050″ x 0.080″ Microstrip
Z8 0.625″ x 0.080″ Microstrip
Z9 0.800″ x 0.080″ Microstrip
Z10 0.589″ x 0.080″ Microstrip
Board Glass Teflon, 31 mils, 2 oz. Copper
Z1
C2
VGG
C15
+
C9 B1
R1
C16C17
C5
C11
C10
TYPICAL CHARACTERISTICS, 480 - 520 MHz
Pout, OUTPUT POWER (WATTS)
IRL, INPUT RETURN LOSS (dB)
−5
−15
−25
−10
2
0
101
Figure 2. Output Power versus Input Power
Pin, INPUT POWER (WATTS)
2
Figure 3. Input Return Loss versus
Output Power
P
out, OUTPUT POWER (WATTS)
0
6
0.80.2
4
0.6 1.00.4
0
3
10
8
520 MHz
500 MHz
480 MHz
546879
−20
520 MHz
500 MHz
480 MHz
VDD = 7.5 Vdc VDD = 7.5 Vdc
4
RF Device Data
Freescale Semiconductor
MRF1517NT1
TYPICAL CHARACTERISTICS, 480 - 520 MHz
Pin = 27 dBm
VDD = 7.5 Vdc
2
Pout, OUTPUT POWER (WATTS)
50
10
80
14
Eff, DRAIN EFFICIENCY (%)
30
60
40
35
Eff, DRAIN EFFICIENCY (%)
Figure 4. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
8
6
14
Figure 5. Drain Efficiency versus Output Power
2
GAIN (dB)
Figure 6. Output Power versus Biasing Current
12
IDQ, BIASING CURRENT (mA)
0
Figure 7. Drain Efficiency versus Biasing Current
80
IDQ, BIASING CURRENT (mA)
Figure 8. Output Power versus Supply Voltage
5
VDD, SUPPLY VOLTAGE (VOLTS)
0
Figure 9. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
30
9
85
0
40
60
60
30
4000
4
12
600 1000
80
2
4
6
10
18
200
50
12
P
out, OUTPUT POWER (WATTS)
200 1000400 600
P
out , OUTPUT POWER (WATTS)
69107678 10
31
2
6
Eff, DRAIN EFFICIENCY (%)
50
70
500 MHz
520 MHz
480 MHz
56479108
16
68791011
70
20
500 MHz
520 MHz
480 MHz
800
8
500 MHz
520 MHz 480 MHz
800
70
500 MHz
520 MHz
480 MHz
10
8500 MHz
520 MHz
480 MHz
500 MHz
520 MHz
480 MHz
10
40
VDD = 7.5 Vdc VDD = 7.5 Vdc
Pin = 27 dBm
VDD = 7.5 Vdc
Pin = 27 dBm
IDQ = 150 mA
Pin = 27 dBm
IDQ = 150 mA
MRF1517NT1
5
RF Device Data
Freescale Semiconductor
Figure 10. 400 - 440 MHz Broadband Test Circuit
VDD
C6 R3
C7
C5
R2
RF
INPUT
RF
OUTPUT
Z2 Z3
Z5
C1
C3
C13
DUT
Z6 Z8 Z9
Z4
L1
Z7 N2
C17
B2
N1
+
C12
C4
C11
B1, B2 Short Ferrite Beads, Fair Rite Products
(2743021446)
C1, C13 300 pF, 100 mil Chip Capacitors
C2, C3, C4, C10,
C11, C12 0 to 20 pF, Trimmer Capacitors
C5, C17 130 pF, 100 mil Chip Capacitors
C6, C14 10 µF, 50 V Electrolytic Capacitors
C7, C15 0.1 µF, 100 mil Chip Capacitors
C8, C16 1,000 pF, 100 mil Chip Capacitors
C9 33 pF, 100 mil Chip Capacitor
L1 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mounts
R1 12 Ω, 0805 Chip Resistor
R2 1.0 kΩ, 1/8 W Resistor
R3 33 kΩ, 1/2 W Resistor
Z1 0.617″ x 0.080″ Microstrip
Z2 0.723″ x 0.080″ Microstrip
Z3 0.513″ x 0.080″ Microstrip
Z4, Z5 0.260″ x 0.223″ Microstrip
Z6 0.048″ x 0.080″ Microstrip
Z7 0.577″ x 0.080″ Microstrip
Z8 1.135″ x 0.080″ Microstrip
Z9 0.076″ x 0.080″ Microstrip
Board Glass Teflon, 31 mils, 2 oz. Copper
Z1
C2
VGG
C14
+
C8 B1
R1
C15C16
C9
C10
TYPICAL CHARACTERISTICS, 400 - 440 MHz
Pout, OUTPUT POWER (WATTS)
IRL, INPUT RETURN LOSS (dB)
−5
−15
−25
−10
21
0
45
Figure 11. Output Power versus Input Power
Pin, INPUT POWER (WATTS)
2
Figure 12. Input Return Loss versus Output Power
P
out, OUTPUT POWER (WATTS)
0
6
0.40.1
4
440 MHz
0.3 0.50.2
0
10
400 MHz
3
9
7
689710
−20
400 MHz
420 MHz
440 MHz
1
3
5
8
420 MHz
VDD = 7.5 Vdc VDD = 7.5 Vdc
6
RF Device Data
Freescale Semiconductor
MRF1517NT1
TYPICAL CHARACTERISTICS, 400 - 440 MHz
2
Pout, OUTPUT POWER (WATTS)
50
20
70
14
Eff, DRAIN EFFICIENCY (%)
30
60
40
35
Eff, DRAIN EFFICIENCY (%)
Figure 13. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
7
5
13
Figure 14. Drain Efficiency versus Output Power
2
GAIN (dB)
1
Figure 15. Output Power versus Biasing Current
12
IDQ, BIASING CURRENT (mA)
0
Figure 16. Drain Efficiency versus Biasing Current
80
IDQ, BIASING CURRENT (mA)
Figure 17. Output Power versus Supply Voltage
5
VDD, SUPPLY VOLTAGE (VOLTS)
0
Figure 18. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
9
85
0
40
60
60
30
4000
6
12
600 1000
80
4
9
17
200
50
11
P
out, OUTPUT POWER (WATTS)
200 1000400 600
P
out, OUTPUT POWER (WATTS)
6910767 8 10
35
2
4
8
Eff, DRAIN EFFICIENCY (%)
50
70
30
4679810
15
68791011
0
10
800
6
10
8
800
70
10
400 MHz 440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
240
Pin = 25.5 dBm
VDD = 7.5 Vdc
VDD = 7.5 Vdc VDD = 7.5 Vdc
Pin = 25.5 dBm
IDQ = 150 mA
Pin = 25.5 dBm
VDD = 7.5 Vdc
Pin = 25.5 dBm
IDQ = 150 mA
MRF1517NT1
7
RF Device Data
Freescale Semiconductor
Figure 19. 440 - 480 MHz Broadband Test Circuit
VDD
C6 R3
C7
C5
R2
RF
INPUT
RF
OUTPUT
Z2 Z3
Z5
C1
C3
C13
DUT
Z6 Z8 Z9
Z4
L1
Z7 N2
C17
B2
N1
+
C12
C4
C11
B1, B2 Short Ferrite Beads, Fair Rite Products
(2743021446)
C1 240 pF, 100 mil Chip Capacitor
C2, C3, C4, C10,
C11, C12 0 to 20 pF, Trimmer Capacitors
C5, C17 130 pF, 100 mil Chip Capacitors
C6, C14 10 mF, 50 V Electrolytic Capacitors
C7, C15 0.1 mF, 100 mil Chip Capacitors
C8, C16 1,000 pF, 100 mil Chip Capacitors
C9 39 pF, 100 mil Chip Capacitor
C13 330 pF, 100 mil Chip Capacitor
L1 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mounts
R1 15 Ω, 0805 Chip Resistor
R2 1.0 kΩ, 1/8 W Resistor
R3 33 kΩ, 1/2 W Resistor
Z1 0.471″ x 0.080″ Microstrip
Z2 1.082″ x 0.080″ Microstrip
Z3 0.372″ x 0.080″ Microstrip
Z4, Z5 0.260″ x 0.223″ Microstrip
Z6 0.050″ x 0.080″ Microstrip
Z7 0.551″ x 0.080″ Microstrip
Z8 0.825″ x 0.080″ Microstrip
Z9 0.489″ x 0.080″ Microstrip
Board Glass Teflon, 31 mils, 2 oz. Copper
Z1
C2
VGG
C14
+
C8 B1
R1
C15C16
C9
C10
TYPICAL CHARACTERISTICS, 440 - 480 MHz
Pout, OUTPUT POWER (WATTS)
IRL, INPUT RETURN LOSS (dB)
−5
−15
−20
−10
21
0
5
Figure 20. Output Power versus Input Power
Pin, INPUT POWER (WATTS)
2
Figure 21. Input Return Loss versus Output Power
0.4
P
out, OUTPUT POWER (WATTS)
0.0
7
0.6
4480 MHz
440 MHz
0.80.2
0
10
460 MHz
3
−25
9
46 978 10
480 MHz
440 MHz
460 MHz
1
6
3
8
5
VDD = 7.5 Vdc VDD = 7.5 Vdc
8
RF Device Data
Freescale Semiconductor
MRF1517NT1
TYPICAL CHARACTERISTICS, 440 - 480 MHz
2
Pout, OUTPUT POWER (WATTS)
50
0
70
14
Eff, DRAIN EFFICIENCY (%)
30
60
40
35
Eff, DRAIN EFFICIENCY (%)
Figure 22. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
7
5
13
Figure 23. Drain Efficiency versus Output Power
2
GAIN (dB)
1
Figure 24. Output Power versus Biasing Current
12
IDQ, BIASING CURRENT (mA)
0
Figure 25. Drain Efficiency versus Biasing Current
80
IDQ, BIASING CURRENT (mA)
Figure 26. Output Power versus Supply Voltage
5
VDD, SUPPLY VOLTAGE (VOLTS)
0
Figure 27. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
9
85
0
40
60
30
4000
8
12
600 1000
80
2
4
6
9
17
200
50
4
11
P
out, OUTPUT POWER (WATTS)
200 1000400 600
P
out, OUTPUT POWER (WATTS)
69107678 10
35
70
60
2
Eff, DRAIN EFFICIENCY (%)
50
70
30
20
10
687910
15
68791011
800
8
10
800
6
10
480 MHz
440 MHz
460 MHz 480 MHz
440 MHz
460 MHz
480 MHz
440 MHz
460 MHz
480 MHz
440 MHz
460 MHz
480 MHz
440 MHz
460 MHz
480 MHz
440 MHz
460 MHz
40
4
Pin = 27.5 dBm
VDD = 7.5 Vdc VDD = 7.5 Vdc
Pin = 27.5 dBm
Pin = 27.5 dBm Pin = 27.5 dBm
MRF1517NT1
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
109
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
106
MTTF FACTOR (HOURS X AMPS2)
90 110 130 150 170 190100 120 140 160 180 200
Figure 28. MTTF Factor versus Junction Temperature
107
10
RF Device Data
Freescale Semiconductor
MRF1517NT1
Zin = Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 29. Series Equivalent Input and Output Impedance
Zin = Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
f
MHz
Zin
Ω
ZOL*
Ω
440 1.62 +j3.41 3.25 +j0.98
Zin = Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
460 1.85 +j3.35 3.05 +j0.93
480 1.91 +j3.31 2.54 +j0.84
f
MHz
Zin
Ω
ZOL*
Ω
480 1.06 +j1.82 3.51 +j0.99
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
500 0.97 +j2.01 2.82 +j0.75
520 0.975 +j2.37 1.87 +j1.03
f
MHz
Zin
Ω
ZOL*
Ω
400 1.96 +j3.32 2.52 +j0.39
420 2.31 +j3.56 2.61 +j0.64
440 1.60 +j3.45 2.37 +j1.04
520
Zo = 10 Ω
Zin
f = 480 MHz
400
Zo = 10 Ω
Zin
f = 440 MHz
ZOL*
480
Zo = 10 Ω
Zin
f = 440 MHz
ZOL*
ZOL*
f = 440 MHz
400
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
440
f = 480 MHz
f = 480 MHz
520
Zin ZOL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
MRF1517NT1
11
RF Device Data
Freescale Semiconductor
Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc)
IDQ = 150 mA
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
50 0.84 - 152 17.66 97 0.016 0 0.77 -167
100 0.84 -164 8.86 85 0.016 5 0.78 -172
200 0.86 -170 4.17 72 0.015 -5 0.79 - 173
300 0.88 -171 2.54 62 0.014 -8 0.80 - 172
400 0.90 -172 1.72 55 0.013 -25 0.83 - 172
500 0.92 -172 1.28 50 0.013 -10 0.84 - 172
600 0.94 -173 0.98 46 0.014 -22 0.86 - 171
700 0.95 -173 0.76 41 0.010 -30 0.86 - 172
800 0.96 -174 0.61 38 0.011 -14 0.86 - 171
900 0.96 -175 0.50 33 0.011 -31 0.85 - 172
1000 0.97 - 175 0.40 31 0.006 55 0.88 -171
IDQ = 800 mA
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
50 0.90 - 165 20.42 94 0.018 1 0.76 -164
100 0.89 -172 10.20 87 0.015 -7 0.77 -170
200 0.90 -175 4.96 79 0.015 -12 0.77 - 172
300 0.90 -176 3.17 73 0.017 -2 0.80 - 171
400 0.91 -176 2.26 67 0.013 1 0.82 -172
500 0.92 -176 1.75 63 0.011 -6 0.83 -171
600 0.93 -176 1.39 59 0.012 -31 0.85 - 171
700 0.94 -176 1.14 55 0.015 -34 0.88 - 171
800 0.94 -176 0.93 51 0.008 -22 0.87 - 171
900 0.95 -177 0.78 45 0.007 2 0.87 -172
1000 0.96 - 177 0.65 43 0.008 -40 0.90 -170
IDQ = 1.5 A
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
50 0.92 - 165 19.90 95 0.017 3 0.76 -164
100 0.90 -172 9.93 88 0.018 2 0.77 -170
200 0.91 -176 4.84 80 0.016 -4 0.77 - 172
300 0.91 -176 3.10 74 0.014 -11 0.80 -172
400 0.92 -176 2.22 68 0.014 -14 0.81 - 172
500 0.93 -176 1.73 64 0.016 -8 0.83 - 171
600 0.94 -176 1.39 61 0.013 -24 0.85 - 171
700 0.94 -176 1.12 56 0.013 -24 0.87 - 171
800 0.95 -176 0.93 52 0.009 -12 0.87 - 171
900 0.96 -177 0.78 46 0.008 10 0.87 -173
1000 0.97 - 177 0.64 44 0.012 4 0.89 -169
12
RF Device Data
Freescale Semiconductor
MRF1517NT1
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common - source, RF power, N-Channel
enhancement mode, Lateral Metal-Oxide Semiconductor
Field-Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and char-
acteristics of FETs.
This surface mount packaged device was designed pri-
marily for VHF and UHF portable power amplifier applica-
tions. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs in-
clude high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate -to-drain (Cgd), and
gate - to-source (Cgs). The PN junction formed during fab-
rication of the RF MOSFET results in a junction capacitance
from drain-to -source (Cds). These capacitances are charac-
terized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships be-
tween the inter -terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF ap-
plications.
Drain
Cds
Source
Gate
Cgd
Cgs
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full- on condition. This on-resistance, RDS(on), occurs
in the linear region of the output characteristic and is speci-
fied at a specific gate-source voltage and drain current. The
drain-source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally re-
quired for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the de-
vice.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate-to -source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open- cir-
cuited or floating should be avoided. These conditions can
result in turn-on of the devices due to voltage build - up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate-to -source. If gate protec-
tion is required, an external zener diode is recommended.
Using a resistor to keep the gate - to-source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate- drain capacitance. If the
gate - to-source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate-threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain cur-
rent flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple re-
sistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some de-
gree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MRF1517NT1
13
RF Device Data
Freescale Semiconductor
MOUNTING
The specified maximum thermal resistance of 2°C/W as-
sumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Meth-
od for the PLD- 1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional in-
formation.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large - signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two-port stability analysis with this device’s
S-parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, “RF Small -Signal Design
Using Two-Port Parameters” for a discussion of two port
network theory and stability.
14
RF Device Data
Freescale Semiconductor
MRF1517NT1
PACKAGE DIMENSIONS
0.115
2.92
0.020
0.51
0.115
2.92
mm
inches
0.095
2.41
0.146
3.71
SOLDER FOOTPRINT
CASE 466- 03
ISSUE D
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.255 0.265 6.48 6.73
B0.225 0.235 5.72 5.97
C0.065 0.072 1.65 1.83
D0.130 0.150 3.30 3.81
E0.021 0.026 0.53 0.66
F0.026 0.044 0.66 1.12
G0.050 0.070 1.27 1.78
H0.045 0.063 1.14 1.60
K0.273 0.285 6.93 7.24
L0.245 0.255 6.22 6.48
N0.230 0.240 5.84 6.10
P0.000 0.008 0.00 0.20
Q0.055 0.063 1.40 1.60
R0.200 0.210 5.08 5.33
S0.006 0.012 0.15 0.31
U0.006 0.012 0.15 0.31
ZONE V 0.000 0.021 0.00 0.53
ZONE W 0.000 0.010 0.00 0.25
ZONE X 0.000 0.010 0.00 0.25
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
J0.160 0.180 4.06 4.57
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
A
BD
F
L
R
3
4
21
K
N
ZONE V
ZONE W
ZONE X
GS
H
U
_
10 DRAFT
P
CE
0.35 (0.89) X 45 5
"
YY
Q
VIEW Y- Y
__
4
2
1
3
PLD-1.5
PLASTIC
MRF1517NT1
15
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
•AN211A: Field Effect Transistors in Theory and Practice
•AN215A: RF Small-Signal Design Using Two -Port Parameters
•AN721: Impedance Matching Networks Applied to RF Power Transistors
•AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
6June 2008 •Corrected specified performance values for power gain and efficiency on p. 1 to match typical
performance values in the functional test table on p. 2
•Added Product Documentation and Revision History, p. 15
7June 2009 •Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
•Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 15
16
RF Device Data
Freescale Semiconductor
MRF1517NT1
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