BSR14 — NPN General Purpose Amplifier
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR14 Rev. B0 1
September 2012
BSR14
NPN General Purpose Amplifier
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.
• Sourced from Process 19.
• See BCW65C for characteristics.
Absolute Maximum Ratings* Ta = 25C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25C unless otherwise noted
* Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Symbol Parameter Value Units
VCEO Collector-Emitter V oltage 40 V
VCBO Collector-Base V oltage 75 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 800 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C
Symbol Parameter Max. Units
*BSR14
PDTotal Device Dissipation
Derate above 25C350
2.8 mW
mW/C
RJA Thermal Resistance, Junction to Ambient 357 C/W
SOT-23
Mark:U8
C
B
E
BSR14 — NPN General Purpose Amplifier
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR14 Rev. B0 2
Electrical Characteristics Ta = 25°C unless otherwise noted
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mj c=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7
Xtf=3 Rb=10)
Symbol Parameter Test Condition Min. Max. Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10A, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 75 V
V(BR)EBO Emitter-Base Breakdown V o ltage IE = 10A, IC = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 60V,
VCB = 60V, Ta = 150°C 10
10 nA
A
ICEX Collector-Cutoff Current VCE = 60V, VEB = 3.0V 10 nA
IBEX Reverse Base Current VCE = 60V, VEB = 3.0V 20 nA
IEBO Emitter-Cutoff Current VEB = 3.0V, IC = 0 15 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 10V
35
50
75
100
50
40
300
VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.3
1.0 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.6 1.2
2.0 V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 20mA, VCE = 20V,
f = 100mHz 300 MHz
CCB Collector-Base Capacitance VCB = 10V, IE = 0,
f = 1.0MHz 8.0 pF
hie Input Impedance VCE = 10V, IC = 1.0mA,
f = 1.0kHz 2.0 8.0 k
hfe Small-Signal Current Gain VCE = 10V, IC = 1.0mA,
f = 1.0kHz 50 300
hoe Output Admittance VCE = 10V, IC = 1.0mA,
f = 1.0kHz 535S
SWITCHING CHARACTERISTICS
tdDelay Time VCC = 30V, VBE(OFF) =
0.5V, IC = 150mA,
IB1 = 15mA
10 ns
trRise Time 25 ns
tsStorage Time VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA 225 ns
tfFall Time 60 ns
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Rev. I62
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