2SC1969 SILICON POWER NPN TRANSISTOR PACKAGE STYLE TO-220AB DESCRIPTION: The ASI 2SC1969 is an epitaxial planar type transistor designed for RF power amplifiers on HF bland mobile radio applications. MAXIMUM RATINGS IC 6.0 A VCEO 25 V PDISS 20 W @ TC = 25 C TJ -55 C to +150 C TSTG -55 C to +150 C JC 6.25 C/W 1 = Base 2 = Collector 3 = Emitter 4 = Collector TRANS1.SYM CHARACTERISTICS TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 25 V BVCBO IC = 1.0 mA 60 V BVEBO IE = 5.0 mA 5.0 V ICBO VCB = 30 V 100 A IEBO VEB = 4.0 V 100 A hFE VCE = 12 V IC = 10 mA 180 --- PO VCC = 12 V PIN = 1.0 W C VCC = 12 V PIN = 1.0 W 10 50 f = 27 MHz 16 18 W f = 27 MHz 60 70 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1