A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
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CHARACTERISTICS TC = 25 °C
TRANS1.SYM
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 10 mA 25 V
BVCBO IC = 1.0 mA 60 V
BVEBO IE = 5.0 mA 5.0 V
ICBO VCB = 30 V 100 µA
IEBO VEB = 4.0 V 100 µA
hFE VCE = 12 V IC = 10 mA 10 50 180 ---
PO VCC = 12 V PIN = 1.0 W f = 27 MHz 16 18 W
ηC VCC = 12 V PIN = 1.0 W f = 27 MHz 60 70 %
SILICON POWER NPN TRANSISTOR
2SC1969
DESCRIPTION:
The ASI 2SC1969 is an epitaxial
planar type transistor designed for RF
power amplifiers on HF bland mobile
radio applications.
MAXIMUM RATINGS
IC 6.0 A
VCEO 25 V
PDISS 20 W @ TC = 25 °C
TJ -55 °C to +150 °C
TSTG -55 °C to +150 °C
θJC 6.25 °C/W
PACKAGE STYLE TO-220AB
1 = Base 2 = Collector 3 = Emitter
4 = Collector
