NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active
area, high UV sensitivity yet very low noise. The built-in thermoelectric cooler (air cooled) allows a long exposure time achieving a high S/N even
at low light levels. The cap uses a sapphire glass window hermetically welded for high reliability.
Features
l
Wide active area
Pixel pitch: 50 µm (S5930 series)
25 µm (S5931 series)
Pixel height: 2.5 mm
l
High UV sensitivity with good stability
l
Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
l
Excellent output linearity and sensitivity spatial uniformity
l
Start pulse and clock pulses are CMOS logic compatible
l
Built-in air-cooled thermoelectric cooler
(setting temperature: 0 ˚C)
Applications
l
Multichannel spectrophotometry
l
Image readout system
IMAGE SENSOR
NMOS linear image sensor
Built-in thermoelectric cooler ensures long exposure time and stable operation.
S5930/S5931 series
■ Selection guide
Type No. Number of pixels Pixel size
[µm (H) × µm (V)]
Active area size
[mm (H) × mm (V)]
S5930-256S 256 12.8 × 2.5
S5930-512S 512 50 × 2500 25.6 × 2.5
S5931-512S 512 12.8 × 2.5
S5931-1024S 1024 25 × 2500 25.6 × 2.5
In addition to S5930/S5931 series, Hamamatsu provides S8382/S8383 series thermoelectrically cooled NMOS linear image
sensors that offer higher sensitivity in the near IR range. Major characteristics of S8382/S8383 series are almost identical with
S5930/S5931 series except that the peak sensitivity wavelength is 750 nm (see “
■
Spectral response”) and the saturation
charge is 90 m
lx
.s.
1
NMOS linear image sensor
S5930/S5931 series
2.5 mm
1.0 µm
1.0 µm
400 µm
Oxidation silicon
N type silicon
P type silicon
S5930 series: a=50 µm, b=45 µm
S5931 series: a=25 µm, b=20 µm
b
a
KMPDC0020EA
■ Equivalent circuit
Vss
Start st
Clock
Clock 1
2
Active
photodiode
Saturation
control gate
Saturation
control drain
Dummy diode
Dummy video
Active video
End of scan
Digital shift register
(MOS shift register)
■ Active area structure
KMPDA0132EA
■ Absolute maximum ratings
Parameter Symbol Condition Value Unit
Input pulse (φ1, φ2, φst) voltage Vφ 15 V
Ambient temperature *2 -40 to +65 °C
Operating temperature *1 Topr Chip temperature -40 to +50 °C
Storage temperature Tstg -40 to +85 °C
*1: No condensation
*2: The chip temperature should be monitored based on the thermistor resistance in order to keep the chip temperature within
the rated range.
■ Specifications (Ta=25 °C, unless otherwise noted)
S5930 series S5931 series
Parameter Symbol Min. Typ. Max. Min. Typ. Max. Unit
Pixel pitch - - 50 - - 25 - µm
Pixel height - - 2.5 - - 2.5 - mm
Spectral response range
(10% of peak) λ 200 to 1000 200 to 1000 nm
Peak sensitivity wavelength λp - 600 - - 600 - nm
25 °C - 0.2 0.6 - 0.1 0.3
Photodiode dark current
*
3
0 °C ID - 0.006 0.018 - 0.003 0.009 pA
Photodiode capacitance *3 Cph - 20 - - 10 - pF
Saturation exposure *3*4 Esat - 180 - - 180 - mlx · s
Saturation output charge *3 Qsat - 50 - - 25 - pC
Photo response non-uniformity *5PRNU - - ±3 - - ±3 %
*3: Vb=2.0 V, Vφ=5.0 V
*4: 2856 K, tungsten lamp
*5: 50% of saturation, excluding the start pixel and last pixel
2
NMOS linear image sensor
S5930/S5931 series
■ Dimensional outlines (unit: mm)
S5930-256S, S5931-512S S5930-512S, S5931-1024S
KMPDA0089JB KMPDA0090JB
*1: Thickness of sapphire glass
*2: Distance from the surface of sapphire
glass to the chip surface
32.0 ± 0.3
14.99 ± 0.25
0.46
2.54
27.94
2.5
4.05 ± 0.4*
2
12.0
0.25
7.65 ± 0.5
50.0
4.05.0 ± 0.5
5.0 0.8*
1
12.8
*1: Thickness of sapphire glass
*2: Distance from the surface of sapphire
glass to the chip surface
25.6
40.64 ± 0.3
14.99 ± 0.25
0.46
2.54 27.94
2.5
12.0
7.65 ± 0.5
4.0
5.0
58.84
4.05 ± 0.4*
2
0.8*
1
0.25
5.0 ± 0.5
■ Electrical characteristics (Ta=25 °C)
S5930 series S5931 series
Parameter Symbol
Condition
Min. Typ. Max. Min. Typ. Max. Unit
High Vφ1, Vφ2 (H) 4.5 5 10 4.5 5 10 V
Clock pulse (φ1, φ2)
voltage Low Vφ1, Vφ2 (L) 0 - 0.4 0 - 0.4 V
High Vφs (H) 4.5 Vφ1 10 4.5 Vφ1 10 V
Start pulse (φst) voltage Low Vφs (L) 0 - 0.4 0 - 0.4 V
Video bias voltage*6 Vb 1.5
Vφ - 3.0 Vφ - 2.5 1.5 Vφ - 3.0 Vφ - 2.5 V
Saturation control gate voltage Vscg - 0 - - 0 - V
Saturation control drain voltage Vscd - Vb - - Vb - V
Clock pulse (φ1, φ2)
rise/fall time*7
trφ1, trφ2
tfφ1, tfφ2 - 20 - - 20 - ns
Clock pulse (φ1, φ2) pulse width tpwφ1, tpwφ2 200 - - 200 - - ns
Start pulse (φst) rise/fall time
trφs, tfφs - 20 - - 20 - ns
Start pulse (φst) pulse width tpwφs 200 - - 200 - - ns
Start pulse (φst) and clock pulse
(φ2) overlap tφov 200 - - 200 - - ns
Clock pulse space*7 X1, X2 trf - 20 - - trf - 20 - - ns
Data rate*8 f 0.1 - 2000 0.1 - 2000 kHz
-
120 (-256S)
- -
150 (-512S)
- ns
Video delay time tvd
50 % of
saturation
*
8
*
9
-
160 (-512S)
- -
200 (-1024S)
- ns
-
36 (-256S)
- -
50 (-512S)
- pF
Clock pulse (φ1, φ2)
line capacitance Cφ 5 V bias -
67 (-512S)
- -
100 (-1024S)
- pF
-
20 (-256S)
- -
24 (-512S)
- pF Saturation control gate (Vscg)
line capacitance Cscg 5 V bias -
35 (-512S)
- -
45 (-1024S)
- pF
-
11 (-256S)
- -
16 (-512S)
- pF
Video line capacitance CV 2 V bias
-
20 (-512S)
- -
30 (-1024S)
- pF
*6: Vφ is input pulse voltage.
*7: trf is the clock pulse rise or fall time. A clock pulse space of “rise time/fall time - 20 ” ns (nanoseconds) or more should be
input if the clock pulse rise or fall time is longer than 20 ns.
*8: Vb=2.0 V, Vφ=5.0 V
*9: Measured with C7883 driver circuit.
3
NMOS linear image sensor
S5930/S5931 series
0.5
0.4
0.3
0.2
0.1
0200 400 600 800 1000 1200
Wavelength (nm)
Photo sensitivity (A/W)
(Ta=25 ˚C)
S5930/S5931 series
IR high-sensitivity type
S8382/S8383 series
st
1
2
NC
NC
TE-cooler +
TE-cooler -
End of scan
NC
Dummy video
Active video
Vss
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
NC
NC
Vss
Vscg
Vsub
NC
Thermistor
Thermistor
NC
Vscd
NC
NC
Vss, Vsub and NC should be grounded.
Electricity flows between the 20th pin and package metal.
■ Pin connection
KMPDC0115EA
10
-5
10
2
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Output charge (pC)
Exposure (lx · s)
(Typ. Vb=2 V, V
=5 V, light source: 2856 K)
Saturation
charge
S5931 series
Saturation exposure
S5930 series
KMPDB0163EA
■ Spectral response (typical example) ■ Output charge vs. exposure
KMPDB0164EA
Terminal Input or output Description
φ1, φ2Input
(CMOS logic compatible)
Pulses for operating the MOS shift register. The video data rate is equal
to the clock pulse frequency since the video output signal is obtained
synchronously with the rise of φ2 pulse.
φst Input
(CMOS logic compatible)
Pulse for starting the MOS shift register operation. The time interval
between start pulses is equal to the signal accumulation time.
Vss - Connected to the anode of each photodiode. This should be grounded.
Vscg Input Used for restricting blooming. This should be grounded.
Vscd Input Used for restricting blooming. This should be biased at a voltage equal
to the video bias voltage.
Active video Output
Video output signal. Connects to photodiode cathodes when the
address is on. A positive voltage should be applied to the video line in
order to use photodiodes with a reverse voltage. When the amplitude of
φ1 and φ2 is 5 V, a video bias voltage of 2 V is recommended.
Dummy video Output
This has the same structure as the active video, but is not connected to
photodiodes, so only spike noise is output. This should be biased at a
voltage equal to the active video or left as an open-circuit when not
needed.
Vsub -Connected to the silicon substrate. This should be grounded.
End of scan Output
(CMOS logic compatible)
This should be pulled up at 5 V by using a 10 kΩ resistor. This is a
negative going pulse that appears synchronously with the φ2 timing
right after the last photodiode is addressed.
NC -Should be grounded.
TE-cooler Input For sensor chip cooling
Thermistor Output For temperature control
4
NMOS linear image sensor
S5930/S5931 series
■ Specifications of built-in TE-cooler (Typ.)
Parameter Condition S5930-256S, S5931-512S S5930-512S, S5931-1024S Unit
Internal resistance Ta=25 °C 1.0 1.3 Ω
Maximum current*10 Th=27 °C 2.8 2.9 A
Maximum voltage*11 Th=27 °C 3.5 4.6 V
Maximum heat absorption Tc=Th=27 °C 6.0 8.0 W
Maximum temperature difference
Th=27 °C 67 °C
Maximum temperature of
heat radiating side 85 °C
*10:
Electrical current required to generate the maximum difference between temperatures (temperature Th on the heat radiating
side and temperature Tc on the cooling side) at both ends of the thermoelectric cooler while heat is completely insulated.
Cooling efficiency will drop if operated at a current higher than this value.
*11: Voltage required for maximum current flow
*12:
Heat absorption amount when operated at maximum current. This is defined under the condition that the difference
between the temperature Th on the heat radiating side and the temperature Tc on the cooling side is 0 °C.
5
KMPDB0326EA KMPDB0327EA
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Current (A)
Voltage (V)
Chip temperature (˚C)
1
2
3
4
5
-20
-10
0
10
20
30
(Typ. Ta=25 ˚C)
Voltage vs. current
Chip temperature vs. current
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Current (A)
Voltage (V)
Chip temperature (
˚C
)
1
2
3
4
5
-20
-10
0
10
20
30
Voltage vs. current
Chip temperature vs. current
(Typ. Ta=25 ˚C)
S5930-512S, S5931-1024S S5930-256S, S5931-512S
■ Specifications of built-in temperature sensor
A thermistor chip is built in the same package with a NMOS chip, and the chip temperature can be monitored with it, A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
RT1 = RT2 × exp BT1/ T2 (1/T1 – 1/T2)
RT1: Resistance at absolute temperature T1 [K]
R
T2: Resistance at absolute temperature T2 [K]
B
T1/ T2: B constant [K]
The characteristics of the thermistor used are as follows.
R
298=10 kΩ
B
298/323=3450 K
KMPDB0111EB
10 kΩ
220 240 260
Temperature (K)
Resistance
280 300
100 kΩ
1 MΩ
NMOS linear image sensor
S5930/S5931 series
6
■ Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with
electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static dis-
charges. Also protect this device from surge voltages which might be caused by peripheral equipment.
(2) Light input window
If dust or dir t gets on the light input window, it will show up as black blemishes on the image. When cleaning, avoid rubbing
the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a
cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window
surface so that no spot or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive solder ing temperatures and times.
Soldering should be performed within 5 seconds at a soldering temperature below 260 °C.
(4) Precautions when mounting
When installing the device into the socket on the printed circuit board, insert it in the correct orientation after checking the pin
connections. Also take measures to protect this device from static electricity during this work. Never press on the surface of the
device when inserting it into the circuit board, etc. Pressing on the sensor surface causes cracks and fractures in the window,
possibly causing it to fall out and may lead to malfunctions.
・Insert the sensor into the socket while pressing on the sensor edges as shown in photo 1 or pressing on the screw hole
sections as shown in photo 2.
・When securing the device by screws, place and secure it on a flat surface (flatness within 100 µm).
・Use a socket that matches the pin size and specifications.
(5) Operating and storage environments
Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively
high temperature and humidity may cause variations in performance characteristics and must be avoided.
(6) UV exposure
This device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV
exposure to the device.
Photo 1 Photo 2
NMOS linear image sensor
S5930/S5931 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable . However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may hav e a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means dev elopmental specifications. ©2010 Hamamatsu Photonics K.K.
Cat. No. KMPD1018E04
Apr. 2010 DN
NMOS multichannel detector head C5964 series
The C5964 series is a family of multichannel detectors developed for spectrophotometry in the UV
to near infrared range (up to 1000 nm). The C5964 series device incorporates a thermoelectrically-
cooled NMOS linear image sensor (S5930/S5931/S8382/S8383 series), low noise driver/amplifier
circuit and highly stable temperature control circuit. It also operates from simple external signal inputs.
■ Selection guide
The C5964 series consists of the following models depending on the NMOS linear image sensor used.
NMOS linear image sensor
NMOS
multichannel
detector head Type no. Number of pixels Pixel size
[µm (H) × µm (V)]
Active area
[mm (H) × mm (V)] Remark
C5964-0800 S5930-256S 256 12.8 × 2.5
C5964-0900 S5930-512S 512 50 × 2500 25.6 × 2.5
C5964-0910 S5931-512S 512 12.8 × 2.5
C5964-1010 S5931-1024S 1024 25 × 2500 25.6 × 2.5
Standard type
C5964-0801 S8382-256S 256 12.8 × 2.5
C5964-0901 S8382-512S 512 50 × 2500 25.6 × 2.5
C5964-0911 S8383-512S 512 12.8 × 2.5
C5964-1011 S8383-1024S 1024 25 × 2500 25.6 × 2.5
IR-enhanced type
Multichannel detector head montroller C7557-01
The C7557-01 is specifically designed for basic control in multichannel photometry. When connected
to a HAMAMATSU multichannel detector head and a personal computer, the C7557-01 allows easy
control of the detector head and data acquisition by using dedicated software that comes with the unit.
■ Connection example
KACCC0070ED
AC cable (100 to 240 V;
included with the C7557-01)
PC (Windows 2000/XP/Vista)
Controller for
multichannel detector head
C7557-01
USB cable
(Included with
the C7557-01)
C5964 series (USB 2.0)
Shutter *
timing pulse
Dedicated cable
(Included with the C7557-01)
* Shutter, etc. are not available.
TE CONTROL I/O
SIGNAL I/O
POWER
Trig.
