2012 Product Selection Guide Second Edition Changing RF Design. Forever. TM Welcome to Peregrine Semiconductor UltraCMOS(R) RF Process Technology Peregrine Semiconductor is a fabless provider of high-performance radiofrequency (RF) integrated circuits (ICs). Our solutions leverage our proprietary UltraCMOS(R) technology, which enables the design, manufacture, and integration of multiple RF, mixedsignal, and digital functions on a single chip. Our products deliver what we believe is an industry leading combination of performance and monolithic integration, and target a broad range of applications in the aerospace and defense, broadband, industrial, mobile wireless device, test and measurement equipment, and wireless infrastructure markets. UltraCMOS technology combines the fundamental benefits of standard CMOS, the most widely used semiconductor process technology, with a synthetic sapphire substrate that enables significant improvements in performance for RF applications. We own fundamental intellectual property in UltraCMOS technology consisting of numerous U.S. and international patents and trade secrets covering manufacturing processes, basic circuit elements, RF circuit designs, and design know-how. We also have engineered design advancements, including our patented HaRPTM technology which significantly improves harmonic and linearity performance, and our patent-pending DuNETM technology, a circuit design technique that we have used to develop our advanced digitally tunable capacitor (DTC) products. We leverage our extensive RF design expertise and systems knowledge to develop RFIC solutions that address the stringent performance, integration, and reliability requirements of these rapidly evolving wireless markets. Additionally, because UltraCMOS devices are fabricated in standard highvolume CMOS facilities, products benefit from the fundamental reliability, cost effectiveness, high yields, scalability and integration of CMOS, while achieving the high performance levels historically expected from SiGe and GaAs. It is this combination of attributes which enables ease-of-development essential to timely and cost-effective application design by our customers. Peregrine's portfolio of high-performance RFICs includes switches, digital attenuators, frequency synthesizers, mixers/upconverters, prescalers, digitally tunable capactitors (DTCs) and DC-DC converter products with power amplifiers on the horizon. Our products are sold through our direct sales and field applications engineering team and through our network of independent sales representatives and distribution partners around the world. Bulk Silicon CMOS Process UltraCMOS Process (R) The UltraCMOS process, with its insulating sapphire substrate, simple and improved power handling, isolation and ESD tolerance. Quality and Reliability We are committed to providing high quality products and services that meet or exceed our customers' expectations. We have developed and implemented a quality management system to create an organizational environment designed to meet the highest level of quality and reliability standards. Our quality management system has been certified and maintained to ISO 9001 standards since 2001. We achieved AS9100 Quality Management System Standards certification in 2003 to address the strict quality system requirements of the aerospace industry. In early 2012, we further improved the robustness of our quality management system by receiving our ISO/TS 16949:2009 Quality Management System certification by the automotive industry. UltraCMOS(R) RFICs deliver extraordinary ESD tolerance - up to 4.5kV HBM The Innovative HaRPTM Technology Invention IIP3 [dBm] 60 3 .0 V 50 3 .3 V 3 .6 V 40 30 20 HaRPTM technology provides excellent linearity up to 7.5 GHz 10 0 0.01 0.1 1 10 100 1000 10000 Frequency [MHz ] PE42552 Settling Time over Temperature (Time to final value) 30 Settling Time (s) Peregrine's HaRPTM technology enhancements significantly improve harmonic and linearity performance in the RF front-end. Because UltraCMOS(R) technology is composed of a stack of field effect transistors manufactured on an insulating sapphire substrate, it has an inherent ability to pass high power RF signals. The HaRP invention allows for highly linear FETs which, when stacked together, deliver RF performance. In demanding applications such as RF test equipment, HaRP-enhanced ATE switches settle very quickly, reducing gate lag and insertion loss drift while maintaining high linearity and isolation over an extended frequency range. In high-power applications, HaRP-enhanced devices meet critical harmonics specifications with improved power handling. In addition, the HaRP-enabled high-throw, high-power switches for quad-band GSM and GSM/ WCDMA handset applications have delivered a longawaited breakthrough in Intermodulation Distortion (IMD) handling, a specification required by the 3GPP standards body for GSM/WCDMA applications. IIP3 for PE42552 70 85C 25 -40C 20 25C 15 10 5 0 5 10 100 250 With tight specs over process and temperature, UltraCMOS(R) will change the way you design. 500 1000 2000 3000 4000 5000 6000 Frequency (MHz) DuNETM Digital Tuning Technology By applying proven, patented UltraCMOS process and HaRP switch technologies, engineers at Peregrine developed DuNETM tuning technology, a new cicuit design technology used to develop Digitally Tunable Capacitors (DTCs). Supporting a wide range of tuning applications--from tuning the center frequency of mobile-TV and cellular antennas to tunable impedance matching and filters--DuNE-enhanced products offer power handling, performance and size advantages. RF+ VDD 2 or 3-Wire Serial Bus GND RF- The DuNETM DTC is a highly linear tuning solution with accurate capacitance, offering a 2-wire (I2C) or 3-wire (SPI) serial interface in a rugged, monolithic device. Changing RF Design. Forever. TM Wireless and Broadband RF Products RF Switches - 50 W Product Description NEW NEW NEW NEW Part Number Operating Frequency (MHz) IIP3 (dBm @ 2 GHz) P1dB1 (dBm @ 2 GHz) Insertion Loss (dB @ 1 GHz) Isolation (dB @ 1 GHz) Typical Idd (mA @ 3 V) Vdd Range (V) ESD HBM (V) Package SPST, Absorptive SPDT, Absorptive SPDT, Absorptive SPDT, Absorptive SPDT, Absorptive SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SPDT, Reflective SP3T, Reflective SP3T, Reflective SP4T, Reflective SP4T, Absorptive SP5T, Absorptive SP6T, Reflective SP8T, Reflective PE4246 1-5000 53 33 0.80 55 33 2.7-3.3 200 6L 3x3 DFN 4 PE4251 10-3000 30.5 0.60 55 3.0-3.6 8L MSOP (exposed) 59 62 4000 3 PE4257 5-3000 55 31 0.75 8 2.7-3.3 1000 20L 4x4 QFN 64 PE42552 9 kHz-7.5 GHz 65 @ 7.5 GHz 34.5 @ 7.5 GHz 0.65 @ 3 GHz 47 15 @ 3.3 V 3.0-3.6 1000 16L 3x3 QFN PE42556 9 kHz-13.5 GHz 56 @ 13.5 GHz 33 @ 13.5 GHz 0.92 @ 3 GHz 46 21.5 @ 3.3 V 3.0-3.6 4000 Flip Chip PE4210 10-3000 34 15 0.30 36 0.25 2.7-3.3 200 8L MSOP PE4230 10-3000 55 32 0.35 39 29 2.7-3.3 250 8L MSOP PE4237 10-4000 55 32 0.35 43 29 2.7-3.3 250 6L 3x3 DFN PE4239 10-30002 45 27 0.70 32 0.25 2.7-3.3 1500 6L SC70 PE4242 10-3000 45 27 0.70 32 0.25 2.7-3.3 1500 6L SC70 PE4244 10-30002 45 26 0.60 39 0.25 2.7-3.3 1500 8L MSOP PE4245 10-40002 45 27 0.60 42 0.25 2.7-3.3 1500 6L 3x3 DFN 30.5 0.65 51 55 3.0-3.64 8L MSOP PE4250 10-3000 59 4000 1 2 3 PE4259 10-3000 55 33.5 0.35 30 9 1.8-3.3 2000 6L SC70 PE42421 10-3000 55 @ 1 GHz 30.5 0.35 30 9 1.8-3.3 2000 6L SC70 PE42510A 30-2000 Note 6 Note 7 0.4 29 90 @ 3.3 V 3.2-3.4 2000 32L 5x5 QFN PE42551 9 kHz-6 GHz 50 @ 6 GHz 34 @ 6 GHz 0.65 29 @ 3 GHz 20 @ 2.75 V 2.5-3.0 500 20L 4x4 QFN PE4283 10-4000 32 0.65 33.5 8 2.0-3.3 1500 6L SC70 57 PE42430 100-3000 30 0.45 40 130 3.0-5.5 66 4500 8L 1.5x1.5 DFN PE42650A 30-1000 Note 6 Note 7 0.3 38 90 3.2-3.4 2000 32L 5x5 QFN PE42440 50-3000 0.45 34 13 2.65-3.0 2000 16L 3x3 QFN 67 41.5 PE42540 10 Hz-8.0 GHz 58 @ 8 GHz 33 @ 8 GHz 0.8 @ 3 GHz 45 @ 3 GHz 90 @ 3.3 V 3.0-3.55 1000 32L 5x5 QFN PE42451 450-4000 35 1.65 14 2.7-3.3 58 62 3500 24L 4x4 QFN PE4268 100-3000 40 20 0.60 13 2.4-2.8 1500 20L 4x4 QFN 50 PE42480 150-4000 0.70 140 @ 3.3 V 2.7-5.5 2000 24L 4x4 LTCC 69 38 40 Note 1: Power handling varies over frequency. See datasheet Note 5: To view S-parameter data for 50 W switches, visit the product section of our Note 2: Can be used in a 75 W environment website at: www.psemi.com Note 3: Measured at 1 GHz Note 4: Idd range of 4.5-5.5 V also available Note 6: Contact Peregrine's application support team for more information Note 7: PE42510A and PE42650A High Power Switches: P0.1dB = 45.4 dBm @ 0.8 GHz Broadband Switches1 - 75 W Product Description Part Number SPST, Absorptive SPST, Absorptive SPDT, Absorptive SPDT, Absorptive SPDT, Reflective SPDT, Reflective SPDT, Reflective PE4270 PE4271 PE4256 PE4280 PE4231 PE4272 PE4273 Operating Frequency (MHz) IIP2 (dBm) CTB3 (dBc) P1dB4 (dBm) 1-3000 1-3000 5-3000 5-2200 1-1300 5-3000 5-3000 80 80 80 75 80 80 80 -90 -90 -90 -85 -90 -90 -90 30 33 31 26 32 32 32 2 Insertion Loss Isolation (dB @ 1 GHz) (dB @ 50 MHz) 0.75 0.80 0.90 1.10 0.80 0.50 0.50 90 85 80 72 75 70 63 Isolation (dB @ 1 GHz) Typical Idd (mA @ 3 V) ESD HBM (V) Package 63 60 65 60 42 43 34.5 8 8 8 8 29 8 8 500 500 1000 1000 200 1500 1500 6L 3x3 DFN 6L 3x3 DFN 20L 4x4 QFN 20L 4x4 QFN 8L MSOP 8L MSOP 6L SC70 Broadband Switches1 - 75 W - with Unpowered Operation Product Description Part Number SPDT, Absorptive PE42742 SPDT, Absorptive PE42750 Operating Frequency (MHz) IIP22 (dBm) P1dB4 pwr/unpwr (dBm) Insertion Loss (pwr) (dB @ 0.8 GHz) Isolation pwr/unpwr (dB @ 50 MHz) Isolation pwr/unpwr (dB @ 0.8 GHz) Typical Idd (mA @ 3 V) ESD HBM (V) 5-2200 5-2200 90 100 32/26.5 23.5 0.7 1.0 94/90.5 86/87 75/77 72/79 8 8 3500 Note 1: Vdd Range for 75 W Broadband Switches = 2.7-3.3 V Note 3: CTB/CSO measured with 77 and 110 channels; PO = 44 dBmV Note 2: Measurement is limited by test equipment Note 4: Measured at 1 GHz 2000 Package 20L 4x4 QFN 12L 3x3 QFN Test Equipment/ATE Switches TM Peregrine offers complementary devices for TE/ATE applications. HaRP technology enhancements reduce gate lag and insertion loss drift while maintaining high linearity and isolation over an extended frequency range of 9 kHz-13.5 GHz, with the new PE42540 offering low-frequency performance down to 10 Hz. Test Equipment/ATE Switches - 50 W Product Description Operating Frequency IIP3 / P1dB (dBm) Insertion Loss (dB @ 3 GHz) 9 kHz-6 GHz 9 kHz-7.5 GHz 50 / 34 @ 6 GHz 65 / 34.5 @ 7.5 GHz 56 / 33 @ 13.5 GHz 58 / 33 @ 8.0 GHz 0.65 0.65 0.92 0.80 Part Number SPDT, Reflective SPDT, Absorptive SPDT, Absorptive NEW SP4T, Absorptive PE42551 PE425521 PE425561 PE425401 1 9 kHz-13.5 GHz 10 Hz-8.0 GHz Note 1: See also the PE43703 Digital Step Attenuator for TE/ATE designs Isolation (dB @ 1 GHz) Typical Idd (mA @ 3.3 V) 29 @ 3 GHz 20 @ 2.75 V 47 15 46 21.5 45 @ 3 GHz 90 Vdd Range (V) ESD HBM (V) Package 2.5-3.0 3.0-3.6 3.0-3.6 3.0-3.55 500 1000 4000 1000 20L 4x4 QFN 16L 3x3 QFN Flip Chip 32L 5x5 QFN UltraCMOS(R) performs down to 10 Hz! High-Power RF Switches Peregrine's high-power switch products deliver a 50W P1dB compression point with high linearity, efficient power handling capabilities, and harmonic performance of less than -84 dBc @ 42.5 dBm. High Power RF Switches - 50 W Product Description Part Number SPDT, Reflective SP3T, Reflective PE42510A PE42650A1 Operating Frequency (MHz) P0.1dB (dBm @ 0.8 GHz) Insertion Loss (dB @ 0.8 GHz) Isolation (dB @ 0.8 GHz) Typical Idd (mA @ 3.4 V) Vdd Range (V) ESD HBM (V) Package 30-2000 30-1000 45.4 45.4 0.4 0.3 29 38 90 90 3.2-3.4 3.2-3.4 2000 2000 32L 5x5 QFN 32L 5x5 QFN 1 Note 1: Market restrictions apply Mobile Wireless Switches - 50 W Product Description SP4T - 2Tx/2Rx SP6T - 2Tx/4Rx SP6T - 6Tx SP7T - 3Tx/4Rx SP9T - 2Tx/3TRx/4Rx Part Number1 2nd Harmonic (dBc) 3rd Harmonic (dBc) 35 dBm TX Input 33 dBm TX Input 35 dBm TX Input 33 dBm TX Input Insertion Loss Isolation 850/900 MHz 1800/1900 MHz 850/900 MHz 1800/1900 MHz (dB @ 1 GHz) (dB @ 1 GHz) *PE426122 IMD3 (dBm) Typical Idd (mA @ 2.75 V) Vdd Range (V) Package - - -111 -112 -111 113 13 120 13 115 2.4-2.95 2.5-2.8 2.4-3.0 2.5-3.2 2.4-3.0 Flip Chip Flip Chip Flip Chip Flip Chip Flip Chip DIE DIE DIE -89 -86 -73 -84 -75 -74 -78 -75 -79 -77 -68 -76 -73 -76 -75 0.55 0.65 0.50 *PE42695 -82 -87 -75 -85 -77 0.65 0.45 39 38 38 39 38 *PE42660 SP6T - 2Tx/4Rx SP7T - 2Tx/2TRx/3Rx *PE426712 SP7T - 3Tx/4Rx *PE426722 -85 -83 -85 -84 -82 -84 -83 -77.5 -79 -82 -78 -77 0.55 0.65 0.60 48 46 44 - -111 -109 13 13 13 2.65-2.85 2.65-2.85 2.65-2.85 SP4T - 4RF -86 -87 -81 -80 0.45 35 -110 13 2.65-2.85 16L 3x3 QFN *PE42632 2 *PE426622 *PE426742 PE426412 Note 1: Operating Frequency 100-3000 MHz Note 2: 1.8 V-compliant logic (VIH/VIL = 1.4/0.4 V) *Contact factory for pricing and availability. Peregrine's new STeP5 Cellular/Communications Switches meet or exceed the following market performance specifications. Please contact Peregrine Semiconductor at sales@psemi.com to help determine which switch is best for your application. STeP5 Mobile Wireless Switches - 50 W NEW NEW NEW NEW NEW NEW NEW Product Description Part Number1 SP8T - 8Tx SP8T - 8Tx SP10T - 8Tx/2Rx SP10T - 8Tx/2Rx SP10T - 8Tx/2Rx SP10T - 10Tx SP12T - 12Tx *PE426821 2nd Harmonic (dBm) 3rd Harmonic (dBm) 35 dBm TX Input 33 dBm TX Input 35 dBm TX Input 33 dBm TX Input Insertion Loss Isolation 850/900 MHz 1800/1900 MHz 850/900 MHz 1800/1900 MHz (dB @ 1 GHz) (dB @ 1 GHz) *PE426851 *PE426151 *PE426152 *PE426153 *PE426161 *PE426171 Note 1: Operating Frequency 100-3000 MHz Note 2: Typical Idd @ 3.6 V -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 -42 *Contact factory for pricing and availability 0.35 0.35 0.40 0.40 0.40 0.35 0.35 38 38 38 38 38 38 38 IMD3 (dBm) Typical Idd (mA @ 2.75 V) Vdd Range (V) Package -111 -111 -111 -111 -111 -111 -111 120 120 1202 1202 1202 120 120 2.3-4.8 2.3-4.8 2.3-4.8 2.3-4.8 2.3-4.8 2.3-4.8 2.3-4.8 Flip Chip Flip Chip Flip Chip Flip Chip Flip Chip Flip Chip Flip Chip Wireless and Broadband RF Products (continued) DuNETM Digitally Tunable Capacitors In complex radio designs where detuning can cause increased filter loss and PA inefficiencies, signal chain performance can be significantly improved with a monolithically integrated solid-state impedance tuning solution. Peregrine's DuNE Digitally Tunable Capacitors (DTCs), offered in both SPI (3-wire) and I2C (2-wire) control interface versions, continue in a tradition of innovation, high performance and ease-of-use by offering tunability, high voltage handling and excellent linearity. Applications range from tunable filters and matching networks, RFID/NFC, HF/VHF/UHF radios and directional antennas, to phase shifters, antenna tuning and other wireless communications. DuNETM Digitally Tunable Capacitors* Interface PE64904 PE64905 NEW PE64101 NEW PE64102 SPI Compatible I2C Compatible SPI Compatible SPI Compatible Min Capacitance (pF) Max Capacitance (pF) Series Shunt Series Shunt Series Shunt 0.60 0.60 Note 1 Note 1 1.10 1.10 1.4 1.7 4.60 4.60 Note 1 Note 1 5.10 5.10 6.2 15.5 7.7:1 7.7:1 Note 1 Note 1 4.6:1 4.6:1 4.4:1 9.1:1 Note 1: For series configuration see equivalent circuit model in datasheet 72 -2 Power Delivered [dB] IIP3 (dBm) -1 57 52 10L 2x2 QFN 10L 2x2 QFN 12L 2x2 QFN 12L 2x2 QFN Antenna Only With DTC -3 -4 -5 -6 Low Mismatch High Mismatch -7 47 42 1500 1500 1500 1500 y Power Delivered to Antenna 0 77 62 25 25 12 12 Package Application Example IIP3 vs. Frequency at Major Capacitance States 67 35 35 45 45 ESD HBM (V) *Operating Frequency: 100-3000 MHz, Vdd Range: 2.3-3.6 V Highly-Linear Performance 82 Quality Factor (Shunt, 1 GHz) Cmin Cmax Tuning Ratio Power Delivered [dB] Part Number 100 MHz 850 MHz 1900 MHz 2500 MHz Frequency (MHz) C0 = 1.05 pF C5 = 1.70 pF C10 = 2.36 pF C15 = 3.01 pF C20 = 3.66 pF C25 = 4.32 pF -8 0.65 0.70 0.75 0.80 0.85 0.90 Frequency [GHz] C31 = 5.10 pF dtc.psemi.com The DTC tuner increases power delivered to the antenna by eliminating mismatch loss. 0.95 1.00 1.05 RF Front-End Antenna DTC Z RF Digital Step Attenuators (Monolithic) - 50 W Product Description Programming Mode Attenuation 2-bit - PE43204 18 range / 6, 12 dB steps 5-bit - PE4305 15.5 range / 0.5 dB steps 5-bit - PE4306 31 range / 1.0 dB steps 5-bit - PE43501 7.75 range / 0.25 dB steps 5-bit - PE43502 15.5 range / 0.5 dB steps 5-bit - PE43503 31 range / 1 dB steps 6-bit - PE4302 31.5 range / 0.5 dB steps 6-bit - PE4309 31.5 range / 0.5 dB steps 6-bit - PE43601 15.75 range / 0.25 dB steps 6-bit - PE43602 31.5 range / 0.5 dB steps 7-bit - PE43701 31.75 range / 0.25 dB steps 7-bit - PE43702 31.75 range / 0.25 dB steps 7-bit - PE43703 31.75 / 0.25, 0.5, 1.0 steps Operating Freq. (MHz) Insertion Input IP3 Loss (dB) (dBm) Parallel 50 - 3000 Parallel1, Serial 1 - 4000 1 Parallel , Serial 1 - 4000 Parallel1, Ser-Add.2 20 - 6000 Parallel1, Serial 20 - 6000 Parallel1, Serial 20 - 6000 Parallel1, Serial 1 - 4000 Parallel 5 - 4000 Parallel1, Ser-Add.2 20 - 6000 Parallel1, Serial 20 - 5000 1 2 Parallel , Ser-Add. 20 - 4000 Parallel1, Serial 20 - 4000 1 2 Parallel , Ser-Add. 9kHz-6GHz 0.6 1.5 1.5 2.3 2.4 2.4 1.5 1.6 2.3 2.2 1.9 2.0 1.9 61 52 52 58 58 58 52 52 57 58 59 57 59 Attenuation Accuracy (dB @ 1 GHz) Switching Speed (ms) ESD HBM (V) Package -0.25 / +0.40 (0.25+3% of setting) (0.30+3% of setting) (0.15+4% of setting) (0.3+3% of setting) (0.3+3% of setting) (0.10+3% of setting) (0.10+3% of setting) (0.2+4% of setting) (0.3+3% of setting) (0.2+1.5% of setting) (0.2+3% of setting) (0.2+1.5% of setting) 0.03 1 1 0.65 0.65 0.65 1 1 0.65 0.65 0.65 0.65 0.65 2000 500 500 500 500 500 500 2000 500 500 500 500 500 12L 3x3 QFN 20L 4x4 QFN 20L 4x4 QFN 32L 5x5 QFN 24L 4x4 QFN 24L 4x4 QFN 20L 4x4 QFN 24L 4x4 QFN, DIE 32L 5x5 QFN 24L 4x4 QFN 32L 5x5 QFN 24L 4x4 QFN 32L 5x5 QFN Note 1: Parallel Modes: Latched and DirectNote 2: Serial-Addressable Mode Broadband Digital Step Attenuators (Monolithic) - 75 W Attenuation Programming Mode Operating Freq. (MHz) Insertion Loss (dB) Input IP3 (dBm) Attenuation Accuracy (1 GHz) Switching Speed (ms) ESD HBM (V) Package 15 range / 1.0 steps 15.5 range / 0.5 steps 31 range / 1.0 steps 31.5 range / 0.5 steps Parallel1, Serial Parallel1, Serial Parallel1, Serial Parallel1, Serial 1 - 2000 1 - 2000 1 - 2000 1 - 2000 1.4 1.4 1.4 1.4 52 52 52 52 (0.25+7% of setting) (0.15+4% of setting) (0.20+4% of setting) (0.15+4% of setting) 1 1 1 1 500 500 500 500 20L 4x4 QFN 20L 4x4 QFN 20L 4x4 QFN 20L 4x4 QFN Product Description 4-bit 5-bit 5-bit 6-bit - PE43404 PE4307 PE4308 PE4304 Note 1: Parallel Modes: Latched and Direct Integer-N Phase Locked-Loop (PLL) Frequency Synthesizers1 Product Description F Det Type Programming Mode PE3336 PE3341 PE3342 PE833364 PD CP PD PD Parallel, Serial, Hardwire Serial, EEPROM2 Serial, EEPROM2 Par, Ser, Hardwire Max Input Operating Freq. (GHz) RF PLL (MHz) Ref. (MHz) Compare 3.0 2.73 2.73 3.0 100 100 100 100 20 20 20 20 Prescaler 10/11 10/11 10/11 10/11 Main Reference Counters M, A Counters 9bit, 4bit 9bit, 4bit 9bit, 4bit 9bit, 4bit 6bit 6bit 6bit 6bit Typical Idd (mA @ 3 V) ESD HBM (V) Package 19 20 20 20 1000 1000 1000 1000 48L 7x7 QFN 20L 4x4 QFN 20L 4x4 QFN 44L CQFJ Note 1: Vdd Range = 2.85-3.15 VNote 3: 3 GHz available. See datasheet Note 2: Programming Kit available-contains 10 samples Note 4: Not available for Space Level Screening MOSFET Quad Array Mixer Core1 Part Number PE41402 NEW PE41412 PE41503 LO Operating Frequency (MHz) RF 0.01-6000 0.01-1000 245.65-885.65 0.01-6000 0.01-1000 136-941 IF, Nom. LO Drive (dBm) Conv. Loss (dB) 0.01-6000 0.01-1000 44.85-109.65 0-20 0-20 -10 to -6 6.5-7.5 7.0-8.0 6.5-8.7 Isolation (dB, typ.) LO-RF LO-IF 25-40 40 30 25-40 40 30 Input IP3 (dBm, typ.) ESD HBM (V) Package 36 33 25 100 100 1000 6L 3x3 DFN, DIE 8L MSOP 20L 4x4 QFN Note 1: Fully differential DC coupled ports. External baluns requiredNote 2: MOSFET Quad ArrayNote 3: Buffered Quad FET Array Prescalers Product Description PE3511 - Divide-by-2 PE3512 - Divide-by-4 PE3513 - Divide-by-8 Input Operating Frequency (MHz) Divide Ratio Typical Idd mA @ 3 V) Vdd Range (V) ESD HBM (V) Package DC - 1500 DC - 1500 DC - 1500 2 4 8 8 8 8 2.85-3.15 2.85-3.15 2.85-3.15 2000 2000 2000 6L SC70 6L SC70 6L SC70 High-Reliability Products High-Relability RF Products for Space Peregrine Semiconductor's S-level standard and semi-custom UltraCMOS(R) Silicon-on-Sapphire RFICs are based on our high-volume commercial products, yet designed to meet the rad-hard, low-power needs of space applications. High-Rel Switches Product Description PE9354 - SPDT PE95420 - SPDT Operating Frequency (MHz) IIP3 (dBm @ 2 GHz) P1dB (dBm @ 2 GHz) Insertion Loss (dB @ 1 GHz) Isolation (dB @ 1 GHz) Typical Idd (mA @ 3 V) Vdd Range (V) ESD HBM (V) Package 10-3000 1-8500 55 60 31 33 0.55 0.85 32 55 28 100 @ 3.3 V 2.7-3.3 3.0-3.6 200 2000 8L CFP, DIE 7L CQFP, DIE High-Rel RF Digital Step Attenuators (Monolithic) - 50 W Product Description PE94302 - 6-bit Programming Mode Attenuation 31.5 range / 0.5 steps Parallel, Serial Operating Freq. (MHz) Insertion Loss (dB) Input IP3 (dBm) Attenuation Accuracy (1 GHz) Switching Speed (ms) ESD HBM (V) Package 1-4000 1.5 52 (0.55dB+7% of setting) 1 500 28L CQFP, DIE High-Rel Prescalers Input Operating Frequency (MHz) Product Description PE9301 - Divide-by-2 PE9303 - Divide-by-8 PE9304 - Divide-by-2 PE9309 - Divide-by-4 PE9311 - Divide-by-2 PE9312 - Divide-by-4 PE9313 - Divide-by-8 1500 - 3500 1500 - 3500 1000 - 7000 3000 - 13500 DC - 1500 DC - 1500 DC - 1500 Divide Ratio Typical Idd mA @ 3V) Vdd Range (V) ESD HBM (V) Package 2 8 2 4 2 4 8 13 14 14 16 @ 2.6 V 6.5 6.5 6.5 2.85-3.15 2.85-3.15 2.85-3.15 2.45-2.75 2.85-3.15 2.85-3.15 2.85-3.15 250 250 500 250 1000 1000 1000 8L CFP, DIE 8L CFP, DIE 8L CFP, DIE 8L CFP, DIE 8L CFP, DIE 8L CFP, DIE 8L CFP, DIE High-Rel Integer-N Phase Locked-Loop (PLL) Frequency Synthesizers1 Product Description F Det Type Programming Mode PE97022 PE97042 PE9702 PE9704 PE9701 PE9601 PD PD PD PD CP CP Par, Ser, Hardwire Serial, Hardwire Par, Ser, Hardwire Serial, Hardwire Par, Ser, Hardwire Par, Ser, Hardwire Normalized Phase Max Input Operating Freq. Main Reference Noise (dBc/Hz) (GHz) RF PLL (MHz) Ref. (MHz) Compare Counters M, A Counters -216 -216 3.5 3.5 3.0 3.0 3.0 2.2 -210 -210 -210 -210 100 100 100 100 100 100 50 50 20 20 20 20 9bit, 4bit 9bit, 4bit 9bit, 4bit 9bit, 4bit 9bit, 4bit 9bit, 4bit Typical Idd (mA @ 3 V) Vdd Range (V) ESD HBM (V) Package 452 452 24 24 24 24 2.85-3.45 2.85-3.45 2.85-3.15 2.85-3.15 2.85-3.15 2.85-3.15 1000 1000 1000 1000 1000 1000 44L CQFJ, DIE 44L CQFJ, DIE 44L CQFJ, DIE 44L CQFJ, DIE 44L CQFJ, DIE 44L CQFJ, DIE 6bit 6bit 6bit 6bit 6bit 6bit Note 1: Prescaler=10/11 Note 2: Typical Idd = 45 mA @ 3.3 V High-Rel Delta-Sigma Modulated Fractional-N Frequency Synthesizers1 Product Description Programming Mode 2 Normalized Phase Max Input Operating Freq. Noise (dBc/Hz) (GHz) RF PLL (MHz) Ref. (MHz) Compare Main Counters M, A, K Reference Typical Idd Counters (mA @ 3 V) Vdd Range (V) ESD HBM (V) Package Ultra-Low Phase PE97632 Noise 3rd Order DSM Ser, Hardwire -216 3.5 100 50 9bit, 4bit, 18 bit 6bit 403 2.85-3.45 1000 68L CQFJ, DIE Low Phase Noise PE9763 3rd Order DSM -210 3.2 100 50 9bit, 4bit, 18 bit 6bit 30 2.85-3.15 1000 68L CQFJ, DIE Ser, Hardwire Note 1: Prescaler=10/11 Note 2: The PE97632 is pin for pin compatible with the PE9763 in up/down mode Note 3: Typical Idd = 40 mA @ 3.3 V psemi.com Visit our website for the most current list of technical resources. High-Reliability Power Management Products for Space Peregrine's new Power Management Products follow a steep tradition of high-performance and efficiency. The flagship power management family supports DC-DC conversion with radiation hardened Point-of-Load (POL) Synchronous Buck Regulators with integrated switches. These devices offer Single Event Effects (SEE) immunity to a Linear Energy Transfer (LET) greater than 90 MeV.cm2 /mg and radiation hardness of 100 KRad(Si), and replace multi-chip modules by offering superior performance, smaller size and reduced weight in sensitive space applications. Rad-Hard Point-of-Load DC-DC Buck Regulators Part Description Iout (Max) (A) Vin (Min) (V) Vin (Max) (V) Vout (Min) (V) Vout (Max) (V) Async Switching Frequency (kHz) Sync Switching Frequency (kHz) ESD HBM (V) Package 2A DC-DC Buck Regulator 6A DC-DC Buck Regulator 10A DC-DC Buck Regulator 2 6 10 4.6 4.6 4.6 6 6 6 1 1 1 3.6 3.6 3.6 500/1000 500/1000 500/1000 100 - 5000 100 - 5000 100 - 5000 1000 1000 1000 32L CQFP, DIE 32L CQFP, DIE 32L CQFP, DIE Part Number PE99151 PE99153 NEW PE99155 NEW NEW Single Event Effects and the UltraCMOS(R) Solution Peregrine's new radiation-hardened Point-of-Load (POL) buck regulators were tested for Single Event Effects (SEE) at load currents from zero (no-load) to rated max as well as intermediate points. These parts were tested for single event effects (SEE) and no Single Event Upsets (SEU), Single Event Functional Interrupt (SEFI), Single Event Latch-up (SEL), Single Event Burnout (SEB), Single Event Gate Rupture (SEGR) and Single Event Transient (SET) were observed. Products manufactured on UltraCMOS technology do not contain the bulk parasitics which cause latchup and are typically found in Bulk CMOS designs. Additionally, UltraCMOS offers superior resistance to all single event effects and tolerance to total dose radiation of 100 KRad (Si) or greater if needed. Ceramic Packaging. Hermetically Sealed, Rigorously Tested. 8L CFP 7L CQFP 28L CQFP 32L CQFP 44L CQF 68L CQFJ 4.6 x 4.6 x 1.8 6.6 x 5.5 x 1.7 9.1 x 9.9 x 1.3 12.57 x 13.08 x 1.15 16.5 x 16.5 x 2.9 24.1 x 24.1 x 3.1 Simply Designed. Simply Green. Only UltraCMOS.(R) For years, IC and process designers have been interested in UltraCMOS(R) Siliconon-Sapphire (SOS) technology as highperformance alternative to high-voltage RF processes such as SiGe and GaAs. Today, engineers around the world benefit from not only the performance advantages, but also the fundamental properties of UltraCMOS which make it an environmentally friendly option. Leave a Smaller Footprint...And Less eWaste Adding to the potential environmental advantages, UltraCMOS technology enables high levels of monolithic integration, resulting in smaller die and fewer external components in the design. Go Green...Not Toxic As semiconductor processing materials and eWaste are scrutinized by governments and industries around the globe, growing concern over the toxicity and carcinogenic nature of GaAs, along with its associated arsenic slurries, continues to drive market leaders toward more eco friendly technology solutions. Low Power Consumption Low parasitic advantages of standard silicon-oninsulator (SOI) are strengthened with the UltraCMOS process, which delivers minimum parasitic capacitance and industry leading dispersion. When compared to the high-voltage RF processes, UltraCMOS devices consume less power. Going Green Starts on the Inside The UltraCMOS process, a high-performance variation of Silicon-on-Insulator (SOI) process, is not based on arsenic (as are all GaAs-based devices) but instead incorporates a sapphire Wire-bond Die substrate, which intrinsically offers both environmental as well as RF benefits. See Peregrine's and Flip Chip Green Package Information sheet and Certificate of Conformance to learn more. RoHS-Compliant Commercial Packaging Options Peregrine is proud to offer RoHS-compliant, leadfree (Pb-free) packaging for its UltraCMOS RFICs. Pb-free packages utilize matte tin (Sn) plating, or for select QFN packages NiPdAu plating, on to copper lead frames. The reliability aspects of matte Sn plating have been well-researched, including solderability with both Pb-free and standard SnPb solders, and whisker growth in accelerated termperature/humidity conditions. NiPdAu plating provides a solderable surface for both eutectic and Pb-free solders, is less 6L SC70 1.3 x 2.0 x 1.0 8L 1.5x1.5 DFN 10L 2x2 QFN 1.5 x 1.5x 0.50 2.0 x 2.0 x 0.45 susceptible to oxidation, and provides long-term storage and solderability. As regulatory conditions change and new Pb-free packaging solutions become available, Peregrine will maintain its commitment to doing its part to preserve our environment. If the Pb-free solution that you require is not shown, please consult with Peregrine or any of its worldwide sales representatives for solutions to your specific need. 12L 2x2 QFN 8L MSOP 2.0 x 2.0 x 0.60 3.0 x 3.0 x 1.1 Regular and exposed ground paddle 6L DFN 3.0 x 3.0 x 0.9 Fused and Isolated versions 12L 3x3 QFN 16L 3x3 QFN 20L 4x4 QFN 24L 4x4 QFN 32L 5x5 QFN 48L QFN 3.0 x 3.0 x 0.75 3.0 x 3.0 x 0.75 4.0 x 4.0 x 0.9 4.0 x 4.0 x 0.9 5.0 x 5.0 x 0.9 7.0 x 7.0 x 0.9 All dimensions are listed in millimeters (width x length x height) and are approximate. See product datasheets for exact dimensions. Design and Application Support Designing for tomorrow's challenging RF applications requires great products and great technical support. From our engineering excellence, to streamlined manufacturing and technical sales and applications support, Peregrine Semiconductor is committed to a complete product solution. Choose among comprehensive datasheets, application notes, tutorials, reference designs and other engineering resources, all developed to help get your design to market on time. Online Applications Support Materials Product Documentation: Reference libraries show all documentation available for each product. Application Notes: Use our application notes to help design for tomorrow's challenging RF applications. Datasheet Library: Links to all datasheets, organized by part type and part number. Package Information: Shows package dimensions and includes material listing for each package. Technical FAQs: Search our Frequently Asked Questions database. Contact Apps Support: Submit a help ticket to our Applications Engineering team. Application Notes AN10 AN12 AN15 AN16 AN17 AN18 AN20 AN22 Connecting the PE3336, PE9601, and PE9701 to a Serial Bus Interface Considerations for Using the PE323x/PE333x in Fractional-N or Sigma-Delta Designs Impedance Matching the PE4210/20/30 RF Switches for 75 W Applications Using Peregrine PLL in System Clock Applications OC-12 622.08 MHz Reference Clock Design RF Switch Performance Advantages of UltraCMOS(R) Technology over GaAs Technology Multi-Port Handset Switch S-Parameters Migrating from PE9702 to PE97022 AN23 AN24 AN26 AN27 AN28 AN29 AN32 AN33 AN34 Migrating from PE9704 to PE97042 Migrating from PE9763 to PE97632 Advantages of UltraCMOS(R) DSAs with Serial-Addressability Using Blocking Capacitors with UltraCMOS(R) Devices Using the DTC with I2C Operation DTC Theory of Operation Radiation-Hardened Power Management Solution for Xilinx Virtex-5 Space-Grade FPGAs 5-bit and 6-bit RF Digital Step Attenuator Compatibility Implementing Design Features of the PE9915x Point-of-Load Buck Regulator Online Support System - support.psemi.com Visit our website to find the technical resource you need. Product Documentation Knowledge Base and FAQs Ask a Question UltraCMOS(R) Foundry Services Peregrine's UltraCMOS RF and mixed-signal wafer foundry services offer benefits in speed, power, integration and cost. Our comprehensive portfolio of Process Design Kits, standard cell libraries, IP offerings and design services delivers many solutions for today's competitive RF wireless and broadband application challenges. For quick-turn prototyping service, we offer Multi-Project Runs (MPR) on a scheduled basis. This approach enables rapid, low-cost device evolution from design to limited or full production volumes. UltraCMOS(R) Foundry Services Process Flow By selecting Peregrine's UltraCMOS technology, you can count on our expertise and outstanding support throughout the entire foundry process. At Peregrine Semiconductor, our goal is to ensure customers achieve higher performance integrated circuits without a higher price tag. Contact us at foundry@psemi.com for more information. 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TM psemi.com (c) 2012 Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo and UltraCMOS are registered trademarks, and HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners. DS#73-0009-16 Printed in USA 7/12