2012
Product Selection Guide
Second Edition
Changing RF Design. Forever.TM
Welcome to
Peregrine Semiconductor
Peregrine Semiconductor is a fabless
provider of high-performance radio-
frequency (RF) integrated circuits (ICs).
Our solutions leverage our proprietary
UltraCMOS® technology, which enables the design,
manufacture, and integration of multiple RF, mixed-
signal, and digital functions on a single chip. Our
products deliver what we believe is an industry
leading combination of performance and monolithic
integration, and target a broad range of applications
in the aerospace and defense, broadband, industrial,
mobile wireless device, test and measurement
equipment, and wireless infrastructure markets.
We leverage our extensive RF design expertise and
systems knowledge to develop RFIC solutions that
address the stringent performance, integration,
and reliability requirements of these rapidly
evolving wireless markets. Additionally, because
UltraCMOS devices are fabricated in standard high-
volume CMOS facilities, products benefit from
the fundamental reliability, cost effectiveness, high
yields, scalability and integration of CMOS, while
achieving the high performance levels historically
expected from SiGe and GaAs. It is this combination
of attributes which enables ease-of-development
essential to timely and cost-effective application
design by our customers.
Peregrine’s portfolio of high-performance RFICs
includes switches, digital attenuators, frequency
synthesizers, mixers/upconverters, prescalers,
digitally tunable capactitors (DTCs) and DC-DC
converter products with power amplifiers on the
horizon. Our products are sold through our direct
sales and field applications engineering team
and through our network of independent sales
representatives and distribution partners around the
world.
UltraCMOS® RF Process
Technology
UltraCMOS technology combines the fundamental
benefits of standard CMOS, the most widely
used semiconductor process technology, with a
synthetic sapphire substrate that enables significant
improvements in performance for RF applications.
We own fundamental intellectual property in
UltraCMOS technology consisting of numerous U.S.
and international patents and trade secrets covering
manufacturing processes, basic circuit elements,
RF circuit designs, and design know-how. We also
have engineered design advancements, including
our patented HaRP™ technology which significantly
improves harmonic and linearity performance, and
our patent-pending DuNE™ technology, a circuit
design technique that we have used to develop our
advanced digitally tunable capacitor (DTC) products.
Quality and Reliability
We are committed to providing high quality
products and services that meet or exceed our
customers’ expectations. We have developed and
implemented a quality management system to create
an organizational environment designed to meet
the highest level of quality and reliability standards.
Our quality management system has been certified
and maintained to ISO 9001 standards since 2001.
We achieved AS9100 Quality Management System
Standards certification in 2003 to address the
strict quality system requirements of the aerospace
industry. In early 2012, we further improved the
robustness of our quality management system
by receiving our ISO/TS 16949:2009 Quality
Management System certification by the
automotive industry.
The UltraCMOS
process, with its
insulating sapphire
substrate, simple
and improved power
handling, isolation
and ESD tolerance.
Bulk Silicon CMOS Process
UltraCMOS
®
Process
UltraCMOS
®
RFICs deliver extraordinary
ESD tolerance – up to 4.5kV HBM
The Innovative HaRP™
Technology Invention
Peregrine’s HaRP™ technology enhancements
significantly improve harmonic and linearity
performance in the RF front-end. Because
UltraCMOS® technology is composed of a stack of
field effect transistors manufactured on an insulating
sapphire substrate, it has an inherent ability to pass
high power RF signals. The HaRP invention allows
for highly linear FETs which, when stacked together,
deliver RF performance. In demanding applications
such as RF test equipment, HaRP-enhanced ATE
switches settle very quickly, reducing gate lag and
insertion loss drift while maintaining high linearity
and isolation over an extended frequency range. In
high-power applications, HaRP-enhanced devices meet
critical harmonics specifications with improved power
handling. In addition, the HaRP-enabled high-throw,
high-power switches for quad-band GSM and GSM/
WCDMA handset applications have delivered a long-
awaited breakthrough in Intermodulation Distortion
(IMD) handling, a specification required by the 3GPP
standards body for GSM/WCDMA applications.
DuNE™ Digital Tuning
Technology
By applying proven, patented UltraCMOS process
and HaRP switch technologies, engineers at Peregrine
developed DuNE™ tuning technology, a new cicuit
design technology used to develop Digitally Tunable
Capacitors (DTCs). Supporting a wide range of tuning
applications—from tuning the center frequency of
mobile-TV and cellular antennas to tunable impedance
matching and filters—DuNE-enhanced products offer
power handling, performance and size advantages.
0
5
10
15
20
25
30
510100 250500 1000 2000 3000 4000 5000 6000
Settling Time (µs)
Frequency (MHz)
PE42552 Settling Time over Temperature
(Time to final value)
85ºC
-40ºC
25ºC
0
10
20
30
40
50
60
70
Frequency [MHz]
IIP3 [dBm]
3.0 V
3.3 V
3.6 V
IIP3 for PE42552
0.01 0.1 110 100 1000 10000
HaRP™
technology provides
excellent linearity
up to 7.5 GHz
GND
2 or 3-Wire
Serial Bus
RF+
VDD
RF-
The DuNE™ DTC is a highly
linear tuning solution with
accurate capacitance, offering
a 2-wire (I2C) or 3-wire (SPI)
serial interface in a rugged,
monolithic device.
With tight specs
over process and
temperature,
UltraCMOS® will
change the way you
design.
Changing RF Design. Forever. ™
Wireless and Broadband RF Products
Note 1: Power handling varies over frequency. See datasheet
Note 2: Can be used in a 75
W
environment
Note 3: Measured at 1 GHz
Note 4: Idd range of 4.5-5.5 V also available
Note 5: To view S-parameter data for 50
W
switches, visit the product section of our
website at: www.psemi.com
Note 6: Contact Peregrine’s application support team for more information
Note 7: PE42510A and PE42650A High Power Switches: P0.1dB = 45.4 dBm @ 0.8 GHz
RF Switches - 50
W
Product Description Part Number
Operating IIP3 P1dB1Insertion Loss Isolation Typical Idd Vdd ESD
HBM (V) Package
Frequency (MHz) (dBm @ 2 GHz) (dBm @ 2 GHz) (dB @ 1 GHz) (dB @ 1 GHz) (mA @ 3 V) Range (V)
SPST, Absorptive PE4246 1-5000 53 33 0.80 55 33 2.7-3.3 200 6L 3x3 DFN
SPDT, Absorptive PE4251 10-3000 59 30.5 0.60 62 55 3.0-3.644000 8L MSOP (exposed)
SPDT, Absorptive PE4257 5-3000 55 3130.75 64 8 2.7-3.3 1000 20L 4x4 QFN
SPDT, Absorptive PE42552 9 kHz-7.5 GHz 65 @ 7.5 GHz 34.5 @ 7.5 GHz 0.65 @ 3 GHz 47 15 @ 3.3 V 3.0-3.6 1000 16L 3x3 QFN
SPDT, Absorptive PE42556 9 kHz-13.5 GHz 56 @ 13.5 GHz 33 @ 13.5 GHz 0.92 @ 3 GHz 46 21.5 @ 3.3 V 3.0-3.6 4000 Flip Chip
SPDT, Reflective PE4210 10-3000 34 15 0.30 36 0.25 2.7-3.3 200 8L MSOP
SPDT, Reflective PE4230 10-3000 55 32 0.35 39 29 2.7-3.3 250 8L MSOP
SPDT, Reflective PE4237 10-4000 55 32 0.35 43 29 2.7-3.3 250 6L 3x3 DFN
SPDT, Reflective PE4239 10-3000245 27 0.70 32 0.25 2.7-3.3 1500 6L SC70
SPDT, Reflective PE4242 10-3000 45 27 0.70 32 0.25 2.7-3.3 1500 6L SC70
SPDT, Reflective PE4244 10-3000245 26 0.60 39 0.25 2.7-3.3 1500 8L MSOP
SPDT, Reflective PE4245 10-4000245 27 0.60 42 0.25 2.7-3.3 1500 6L 3x3 DFN
SPDT, Reflective PE4250 10-3000 59 30.5 0.65 51 55 3.0-3.644000 8L MSOP
SPDT, Reflective PE4259110-3000255 33.530.35 30 9 1.8-3.3 2000 6L SC70
SPDT, Reflective PE42421 10-3000 55 @ 1 GHz 30.5 0.35 30 9 1.8-3.3 2000 6L SC70
SPDT, Reflective PE42510A 30-2000 Note 6 Note 7 0.4 29 90 @ 3.3 V 3.2-3.4 2000 32L 5x5 QFN
SPDT, Reflective PE42551 9 kHz-6 GHz 50 @ 6 GHz 34 @ 6 GHz 0.65 29 @ 3 GHz 20 @ 2.75 V 2.5-3.0 500 20L 4x4 QFN
SPDT, Reflective PE4283 10-4000 57 32 0.65 33.5 8 2.0-3.3 1500 6L SC70
SP3T, Reflective PE42430 100-3000 66 30 0.45 40 130 3.0-5.5 4500 8L 1.5x1.5 DFN
SP3T, Reflective PE42650A 30-1000 Note 6 Note 7 0.3 38 90 3.2-3.4 2000 32L 5x5 QFN
SP4T, Reflective PE42440 50-3000 67 41.5 0.45 34 13 2.65-3.0 2000 16L 3x3 QFN
SP4T, Absorptive PE42540 10 Hz-8.0 GHz 58 @ 8 GHz 33 @ 8 GHz 0.8 @ 3 GHz 45 @ 3 GHz 90 @ 3.3 V 3.0-3.55 1000 32L 5x5 QFN
SP5T, Absorptive PE42451 450-4000 58 35 1.65 62 14 2.7-3.3 3500 24L 4x4 QFN
SP6T, Reflective PE4268 100-3000 40 20 0.60 50 13 2.4-2.8 1500 20L 4x4 QFN
SP8T, Reflective PE42480 150-4000 69 38 0.70 40 140 @ 3.3 V 2.7-5.5 2000 24L 4x4 LTCC
NEW
NEW
NEW
NEW
Broadband Switches
1
- 75
W
- with Unpowered Operation
P1dB4Insertion Loss Isolation Isolation
Product Description Part Number
Operating IIP22pwr/unpwr (pwr) pwr/unpwr pwr/unpwr Typical Idd ESD Package
Frequency (MHz) (dBm) (dBm) (dB @ 0.8 GHz) (dB @ 50 MHz) (dB @ 0.8 GHz) (mA @ 3 V) HBM (V)
SPDT, Absorptive PE42742 5-2200 90 32/26.5 0.7 94/90.5 75/77 8 3500 20L 4x4 QFN
SPDT, Absorptive PE42750 5-2200 100 23.5 1.0 86/87 72/79 8 2000 12L 3x3 QFN
Note 1: Vdd Range for 75
W
Broadband Switches = 2.7-3.3 V Note 3: CTB/CSO measured with 77 and 110 channels; PO = 44
dBmV Note 2: Measurement is limited by test equipment Note 4: Measured at 1 GHz
Broadband Switches
1
- 75
W
Product Description Part Number
Operating IIP22CTB3P1dB4Insertion Loss Isolation Isolation Typical Idd ESD Package
Frequency (MHz) (dBm) (dBc) (dBm) (dB @ 1 GHz) (dB @ 50 MHz) (dB @ 1 GHz) (mA @ 3 V) HBM (V)
SPST, Absorptive PE4270 1-3000 80 -90 30 0.75 90 63 8 500 6L 3x3 DFN
SPST, Absorptive PE4271 1-3000 80 -90 33 0.80 85 60 8 500 6L 3x3 DFN
SPDT, Absorptive PE4256 5-3000 80 -90 31 0.90 80 65 8 1000 20L 4x4 QFN
SPDT, Absorptive PE4280 5-2200 75 -85 26 1.10 72 60 8 1000 20L 4x4 QFN
SPDT, Reflective PE4231 1-1300 80 -90 32 0.80 75 42 29 200 8L MSOP
SPDT, Reflective PE4272 5-3000 80 -90 32 0.50 70 43 8 1500 8L MSOP
SPDT, Reflective PE4273 5-3000 80 -90 32 0.50 63 34.5 8 1500 6L SC70
Test Equipment/ATE Switches - 50
W
Product Description Part Number
Operating IIP3 / P1dB Insertion Loss Isolation Typical Idd Vdd ESD Package
Frequency (dBm) (dB @ 3 GHz) (dB @ 1 GHz) (mA @ 3.3 V) Range (V) HBM (V)
SPDT, Reflective PE4255119 kHz-6 GHz 50 / 34 @ 6 GHz 0.65 29 @ 3 GHz 20 @ 2.75 V 2.5-3.0 500 20L 4x4 QFN
SPDT, Absorptive PE4255219 kHz-7.5 GHz 65 / 34.5 @ 7.5 GHz 0.65 47 15 3.0-3.6 1000 16L 3x3 QFN
SPDT, Absorptive PE4255619 kHz-13.5 GHz 56 / 33 @ 13.5 GHz 0.92 46 21.5 3.0-3.6 4000 Flip Chip
SP4T, Absorptive PE42540110 Hz-8.0 GHz 58 / 33 @ 8.0 GHz 0.80 45 @ 3 GHz 90 3.0-3.55 1000 32L 5x5 QFN
Note 1: See also the PE43703 Digital Step
Attenuator for TE/ATE designs
High-Power RF Switches
Peregrine’s high-power switch products deliver a 50W P1dB compression point with high linearity, efficient power handling
capabilities, and harmonic performance of less than -84 dBc @ 42.5 dBm.
Peregrine’s new STeP5 Cellular/Communications Switches meet or exceed the following market performance specifications.
Please contact Peregrine Semiconductor at sales@psemi.com to help determine which switch is best for your application.
High Power RF Switches - 50
W
Product Description Part Number
Operating P0.1dB Insertion Loss Isolation Typical Idd Vdd ESD Package
Frequency (MHz) (dBm @ 0.8 GHz) (dB @ 0.8 GHz) (dB @ 0.8 GHz) (mA @ 3.4 V) Range (V) HBM (V)
SPDT, Reflective PE42510A130-2000 45.4 0.4 29 90 3.2-3.4 2000 32L 5x5 QFN
SP3T, Reflective PE42650A130-1000 45.4 0.3 38 90 3.2-3.4 2000 32L 5x5 QFN
Note 1: Market restrictions apply
NEW
Test Equipment/ATE Switches
Peregrine offers complementary devices for TE/ATE applications. HaRPTM technology enhancements reduce gate lag and
insertion loss drift while maintaining high linearity and isolation over an extended frequency range of 9 kHz-13.5 GHz,
with the new PE42540 offering low-frequency performance down to 10 Hz.
UltraCMOS
®
performs
down to 10 Hz!
Mobile Wireless Switches - 50
W
2nd Harmonic (dBc) 3rd Harmonic (dBc)
Product Description Part Number
135 dBm TX Input 33 dBm TX Input 35 dBm TX Input 33 dBm TX Input Insertion Loss Isolation IMD3 Typical Idd Vdd Package
850/900 MHz 1800/1900 MHz 850/900 MHz 1800/1900 MHz (dB @ 1 GHz) (dB @ 1 GHz) (dBm) (mA @ 2.75 V) Range (V)
SP4T - 2Tx/2Rx *PE426122-82 -89 -74 -68 0.55 39 – 1132.4-2.95 Flip Chip
SP6T - 2Tx/4Rx *PE426322-87 -86 -78 -76 0.65 38 – 13 2.5-2.8 Flip Chip
SP6T - 6Tx *PE426622-75 -73 -75 -73 0.50 38 -111 120 2.4-3.0 Flip Chip
SP7T - 3Tx/4Rx *PE426742-85 -84 -79 -76 0.65 39 -112 13 2.5-3.2 Flip Chip
SP9T - 2Tx/3TRx/4Rx *PE42695 -77 -75 -77 -75 0.45 38 -111 115 2.4-3.0 Flip Chip
SP6T - 2Tx/4Rx *PE42660 -85 -84 -83 -82 0.55 48 – 13 2.65-2.85 DIE
SP7T - 2Tx/2TRx/3Rx *PE426712-83 -82 -77.5 -78 0.65 46 -111 13 2.65-2.85 DIE
SP7T - 3Tx/4Rx *PE426722-85 -84 -79 -77 0.60 44 -109 13 2.65-2.85 DIE
SP4T - 4RF PE426412-86 -87 -81 -80 0.45 35 -110 13 2.65-2.85 16L 3x3 QFN
STeP5 Mobile Wireless Switches - 50
W
2nd Harmonic (dBm) 3rd Harmonic (dBm)
Product Description Part Number
135 dBm TX Input 33 dBm TX Input 35 dBm TX Input 33 dBm TX Input Insertion Loss Isolation IMD3 Typical Idd Vdd Package
850/900 MHz 1800/1900 MHz 850/900 MHz 1800/1900 MHz (dB @ 1 GHz) (dB @ 1 GHz) (dBm) (mA @ 2.75 V) Range (V)
SP8T - 8Tx *PE426821 -42 -42 -42 -42 0.35 38 -111 120 2.3-4.8 Flip Chip
SP8T - 8Tx *PE426851 -42 -42 -42 -42 0.35 38 -111 120 2.3-4.8 Flip Chip
SP10T - 8Tx/2Rx *PE426151 -42 -42 -42 -42 0.40 38 -111 12022.3-4.8 Flip Chip
SP10T - 8Tx/2Rx *PE426152 -42 -42 -42 -42 0.40 38 -111 12022.3-4.8 Flip Chip
SP10T - 8Tx/2Rx *PE426153 -42 -42 -42 -42 0.40 38 -111 12022.3-4.8 Flip Chip
SP10T - 10Tx *PE426161 -42 -42 -42 -42 0.35 38 -111 120 2.3-4.8 Flip Chip
SP12T - 12Tx *PE426171 -42 -42 -42 -42 0.35 38 -111 120 2.3-4.8 Flip Chip
Note 1: Operating Frequency 100-3000 MHz
Note 2: 1.8 V-compliant logic (VIH/VIL = 1.4/0.4 V)
*Contact factory for pricing and availability.
Note 1: Operating Frequency 100-3000 MHz
Note 2: Typical Idd @ 3.6 V
*Contact factory for pricing and availability
NEW
NEW
NEW
NEW
NEW
NEW
NEW
Wireless and Broadband RF Products (continued)
dtc.psemi.com
DuNE™ Digitally Tunable Capacitors
In complex radio designs where detuning can cause increased
filter loss and PA inefficiencies, signal chain performance can
be significantly improved with a monolithically integrated
solid-state impedance tuning solution.
Peregrine’s DuNE Digitally Tunable Capacitors (DTCs),
offered in both SPI (3-wire) and I2C (2-wire) control
interface versions, continue in a tradition of innovation, high
performance and ease-of-use by offering tunability, high
voltage handling and excellent linearity. Applications range
from tunable filters and matching networks, RFID/NFC,
HF/VHF/UHF radios and directional antennas, to phase
shifters, antenna tuning and other wireless communications.
DuNE™ Digitally Tunable Capacitors*
Part Number Interface
Min Capacitance (pF) Max Capacitance (pF) Tuning Ratio Quality Factor
(Shunt, 1 GHz) ESD Package
Series Shunt Series Shunt Series Shunt Cmin Cmax HBM (V)
PE64904 SPI Compatible 0.60 1.10 4.60 5.10 7.7:1 4.6:1 35 25 1500 10L 2x2 QFN
PE64905 I2C Compatible 0.60 1.10 4.60 5.10 7.7:1 4.6:1 35 25 1500 10L 2x2 QFN
PE64101 SPI Compatible Note 1 1.4 Note 1 6.2 Note 1 4.4:1 45 12 1500 12L 2x2 QFN
PE64102 SPI Compatible Note 1 1.7 Note 1 15.5 Note 1 9.1:1 45 12 1500 12L 2x2 QFN
Note 1: For series configuration see equivalent circuit model in datasheet *Operating Frequency: 100-3000 MHz, Vdd Range: 2.3-3.6 V
NEW
NEW
PowerDelivered [dB]
0.70 0.75 0.80 0.85 0.90 0.95 1.00 50.156.0
-7
-6
-5
-4
-3
-2
-1
-8
0
Frequency [GHz]
Power Delivered [dB]
y
Antenna Only
With DTC
Power Delivered to Antenna
High
Mismatch
Low
Mismatch
Z
RF Front-End
DTC
Antenna
The DTC tuner increases
power delivered to the
antenna by eliminating
mismatch loss.
Highly-Linear Performance Application Example
42
47
52
57
62
67
72
77
82
100 MHz850 MHz1900 MHz2500 MHz
IIP3 (dBm)
Frequency (MHz)
IIP3 vs. Frequency at Major Capacitance States
C0 = 1.05 pF C5 = 1.70 pF C10 = 2.36 pF
C15 = 3.01 pF C20 = 3.66 pF C25 = 4.32 pF C31 = 5.10 pF
Prescalers
Product Description
Input Operating Frequency Divide Ratio Typical Idd Vdd ESD Package
(MHz) mA @ 3 V) Range (V) HBM (V)
PE3511 - Divide-by-2 DC - 1500 2 8 2.85-3.15
2000
6L SC70
PE3512 - Divide-by-4 DC - 1500 4 8 2.85-3.15
2000
6L SC70
PE3513 - Divide-by-8 DC - 1500 8 8 2.85-3.15
2000
6L SC70
Note 1: Fully differential DC coupled ports. External baluns required Note 2: MOSFET Quad Array Note 3: Buffered Quad FET Array
MOSFET Quad Array Mixer Core
1
Part Number
Operating Frequency (MHz) LO Drive Conv. Loss Isolation (dB, typ.) Input IP3 ESD Package
LO RF IF, Nom. (dBm) (dB) LO-RF LO-IF (dBm, typ.) HBM (V)
PE4140
2
0.01-6000 0.01-6000 0.01-6000 0-20 6.5-7.5 25-40 25-40 36
100
6L 3x3 DFN, DIE
PE4141
2
0.01-1000 0.01-1000 0.01-1000 0-20 7.0-8.0 40 40 33
100
8L MSOP
PE4150
3
245.65-885.65 136-941 44.85-109.65 -10 to -6 6.5-8.7 30 30 25
1000
20L 4x4 QFN
NEW
Note 1: Vdd Range = 2.85-3.15 V Note 3: 3 GHz available. See datasheet
Note 2: Programming Kit available-contains 10 samples Note 4: Not available for Space Level Screening
Integer-N Phase Locked-Loop (PLL) Frequency Synthesizers
1
Product
F Det Programming Max Input Operating Freq. Main Reference Typical Idd ESD Package
Description
Type Mode (GHz) RF PLL (MHz) Ref. (MHz) Compare Prescaler Counters M, A Counters (mA @ 3 V) HBM (V)
PE3336 PD Parallel, Serial, Hardwire 3.0 100 20 10/11 9bit, 4bit 6bit 19
1000
48L 7x7 QFN
PE3341 CP Serial,
EEPROM2
2.73100 20 10/11 9bit, 4bit 6bit 20
1000
20L 4x4 QFN
PE3342 PD Serial,
EEPROM2
2.73100 20 10/11 9bit, 4bit 6bit 20
1000
20L 4x4 QFN
PE833364PD Par, Ser, Hardwire 3.0
100 20
10/11 9bit, 4bit 6bit 20
1000
44L CQFJ
RF Digital Step Attenuators (Monolithic) - 50
W
Product Description
Attenuation Programming Operating Insertion Input IP3 Attenuation Switching ESD Package
Mode Freq. (MHz) Loss (dB) (dBm) Accuracy (dB @ 1 GHz) Speed (ms) HBM (V)
2-bit - PE43204 18 range / 6, 12 dB steps Parallel 50 - 3000 0.6 61 -0.25 / +0.40 0.03 2000 12L 3x3 QFN
5-bit - PE4305 15.5 range / 0.5 dB steps Parallel
1
, Serial 1 - 4000 1.5 52 ±(0.25+3% of setting) 1 500 20L 4x4 QFN
5-bit - PE4306 31 range / 1.0 dB steps Parallel
1
, Serial 1 - 4000 1.5 52 ±(0.30+3% of setting) 1 500 20L 4x4 QFN
5-bit - PE43501 7.75 range / 0.25 dB steps Parallel
1
, Ser-Add.
2
20 - 6000 2.3 58 ±(0.15+4% of setting) 0.65 500 32L 5x5 QFN
5-bit - PE43502 15.5 range / 0.5 dB steps Parallel
1
, Serial 20 - 6000 2.4 58 ±(0.3+3% of setting) 0.65 500 24L 4x4 QFN
5-bit - PE43503 31 range / 1 dB steps Parallel
1
, Serial 20 - 6000 2.4 58 ±(0.3+3% of setting) 0.65 500 24L 4x4 QFN
6-bit - PE4302 31.5 range / 0.5 dB steps Parallel
1
, Serial 1 - 4000 1.5 52 ±(0.10+3% of setting) 1 500 20L 4x4 QFN
6-bit - PE4309 31.5 range / 0.5 dB steps Parallel 5 - 4000 1.6 52 ±(0.10+3% of setting) 1 2000 24L 4x4 QFN, DIE
6-bit - PE43601 15.75 range / 0.25 dB steps Parallel
1
, Ser-Add.
2
20 - 6000 2.3 57 ±(0.2+4% of setting) 0.65 500 32L 5x5 QFN
6-bit - PE43602 31.5 range / 0.5 dB steps Parallel
1
, Serial 20 - 5000 2.2 58 ±(0.3+3% of setting) 0.65 500 24L 4x4 QFN
7-bit - PE43701 31.75 range / 0.25 dB steps Parallel
1
, Ser-Add.
2
20 - 4000 1.9 59 ±(0.2+1.5% of setting) 0.65 500 32L 5x5 QFN
7-bit - PE43702 31.75 range / 0.25 dB steps Parallel
1
, Serial 20 - 4000 2.0 57 ±(0.2+3% of setting) 0.65 500 24L 4x4 QFN
7-bit - PE43703 31.75 / 0.25, 0.5, 1.0 steps Parallel
1
, Ser-Add.
2
9kHz-6GHz 1.9 59 ±(0.2+1.5% of setting) 0.65 500 32L 5x5 QFN
Broadband Digital Step Attenuators (Monolithic) - 75
W
Product Description
Attenuation Programming Operating Insertion Loss Input IP3 Attenuation Switching ESD Package
Mode Freq. (MHz) (dB) (dBm) Accuracy (1 GHz) Speed (ms) HBM (V)
4-bit - PE43404 15 range / 1.0 steps Parallel
1
, Serial 1 - 2000 1.4 52 ±(0.25+7% of setting) 1 500 20L 4x4 QFN
5-bit - PE4307 15.5 range / 0.5 steps Parallel
1
, Serial 1 - 2000 1.4 52 ±(0.15+4% of setting) 1 500 20L 4x4 QFN
5-bit - PE4308 31 range / 1.0 steps Parallel
1
, Serial 1 - 2000 1.4 52 ±(0.20+4% of setting) 1 500 20L 4x4 QFN
6-bit - PE4304 31.5 range / 0.5 steps Parallel
1
, Serial 1 - 2000 1.4 52 ±(0.15+4% of setting) 1 500 20L 4x4 QFN
Note 1: Parallel Modes: Latched and Direct Note 2: Serial-Addressable Mode
Note 1: Parallel Modes: Latched and Direct
High-Reliability Products
High-Rel Prescalers
Product Description
Input Operating Frequency Divide Ratio Typical Idd Vdd ESD Package
(MHz) mA @ 3V) Range (V) HBM (V)
PE9301 - Divide-by-2 1500 - 3500 2 13 2.85-3.15 250 8L CFP, DIE
PE9303 - Divide-by-8 1500 - 3500 8 14 2.85-3.15
250
8L CFP, DIE
PE9304 - Divide-by-2
1000 - 7000
2 14
2.85-3.15 500
8L CFP, DIE
PE9309 - Divide-by-4
3000 - 13500
416 @ 2.6 V
2.45-2.75 250
8L CFP, DIE
PE9311 - Divide-by-2 DC - 1500 2 6.5 2.85-3.15
1000
8L CFP, DIE
PE9312 - Divide-by-4 DC - 1500 4 6.5 2.85-3.15
1000
8L CFP, DIE
PE9313 - Divide-by-8 DC - 1500 8 6.5 2.85-3.15
1000
8L CFP, DIE
High-Rel Switches
Product Description
Operating IIP3 P1dB Insertion Loss Isolation Typical Idd Vdd ESD Package
Frequency (MHz) (dBm @ 2 GHz) (dBm @ 2 GHz) (dB @ 1 GHz) (dB @ 1 GHz) (mA @ 3 V) Range (V) HBM (V)
PE9354 - SPDT 10-3000 55 31 0.55 32 28 2.7-3.3 200 8L CFP, DIE
PE95420 - SPDT 1-8500 60 33 0.85 55 100 @ 3.3 V 3.0-3.6 2000 7L CQFP, DIE
High-Rel RF Digital Step Attenuators (Monolithic) - 50
W
Product Description
Attenuation Programming Operating Insertion Loss Input IP3 Attenuation Switching ESD Package
Mode Freq. (MHz) (dB) (dBm) Accuracy (1 GHz) Speed (ms) HBM (V)
PE94302 - 6-bit 31.5 range / 0.5 steps Parallel, Serial 1-4000 1.5 52 ±(0.55dB+7% of setting) 1 500 28L CQFP, DIE
High-Rel Delta-Sigma Modulated Fractional-N Frequency Synthesizers
1
Product Description
Programming Normalized Phase Max Input Operating Freq. Main Reference Typical Idd Vdd ESD Package
Mode Noise (dBc/Hz) (GHz) RF PLL (MHz) Ref. (MHz) Compare Counters M, A, K Counters (mA @ 3 V) Range (V) HBM (V)
PE976322 Ultra-Low Phase
Noise 3rd Order DSM Ser, Hardwire
-216
3.5 100 50 9bit, 4bit, 18 bit 6bit 4032.85-3.45
1000
68L CQFJ, DIE
PE9763 Low Phase Noise
3rd Order DSM Ser, Hardwire
-210
3.2 100 50 9bit, 4bit, 18 bit 6bit 30 2.85-3.15
1000
68L CQFJ, DIE
Note 1: Prescaler=10/11 Note 2: The PE97632 is pin for pin compatible with the PE9763 in up/down mode Note 3: Typical Idd = 40 mA @ 3.3 V
High-Rel Integer-N Phase Locked-Loop (PLL) Frequency Synthesizers
1
Product
F Det Programming Normalized Phase Max Input Operating Freq. Main Reference Typical Idd Vdd ESD Package
Description
Type Mode Noise (dBc/Hz) (GHz) RF PLL (MHz) Ref. (MHz) Compare Counters M, A Counters (mA @ 3 V) Range (V) HBM (V)
PE97022
PD
Par, Ser, Hardwire
-216
3.5 100 50 9bit, 4bit 6bit 4522.85-3.45
1000
44L CQFJ, DIE
PE97042
PD
Serial, Hardwire
-216
3.5 100 50 9bit, 4bit 6bit 4522.85-3.45
1000
44L CQFJ, DIE
PE9702
PD
Par, Ser, Hardwire
-210
3.0 100 20 9bit, 4bit 6bit 24 2.85-3.15
1000
44L CQFJ, DIE
PE9704
PD
Serial, Hardwire
-210
3.0 100 20 9bit, 4bit 6bit 24 2.85-3.15
1000
44L CQFJ, DIE
PE9701
CP
Par, Ser, Hardwire
-210
3.0 100 20 9bit, 4bit 6bit 24 2.85-3.15
1000
44L CQFJ, DIE
PE9601 CP Par, Ser, Hardwire
-210
2.2 100 20 9bit, 4bit 6bit 24 2.85-3.15
1000
44L CQFJ, DIE
Note 1: Prescaler=10/11 Note 2: Typical Idd = 45 mA @ 3.3 V
High-Relability RF Products for Space
Peregrine Semiconductor’s S-level standard and semi-custom UltraCMOS® Silicon-on-Sapphire RFICs are based on our
high-volume commercial products, yet designed to meet the rad-hard, low-power needs of space applications.
psemi.com
Visit our website for the most current list of technical resources.
Rad-Hard Point-of-Load DC-DC Buck Regulators
Part Number
Part Description Iout (Max) Vin (Min) Vin (Max) Vout (Min) Vout (Max) Async Switching Sync Switching ESD Package
(A) (V) (V) (V) (V) Frequency (kHz) Frequency (kHz) HBM (V)
PE99151 2A DC-DC Buck Regulator 2 4.6 6 1 3.6 500/1000 100 - 5000 1000 32L CQFP, DIE
PE99153 6A DC-DC Buck Regulator 6 4.6 6 1 3.6 500/1000 100 - 5000 1000 32L CQFP, DIE
PE99155 10A DC-DC Buck Regulator 10 4.6 6 1 3.6 500/1000 100 - 5000 1000 32L CQFP, DIE
8L CFP
4.6 x 4.6 x 1.8
28L CQFP
9.1 x 9.9 x 1.3
32L CQFP
12.57 x 13.08 x 1.15
44L CQF
16.5 x 16.5 x 2.9
68L CQFJ
24.1 x 24.1 x 3.1
Ceramic Packaging. Hermetically Sealed, Rigorously Tested.
7L CQFP
6.6 x 5.5 x 1.7
Peregrine’s new radiation-hardened Point-of-Load (POL)
buck regulators were tested for Single Event Effects (SEE)
at load currents from zero (no-load) to rated max as well
as intermediate points. These parts were tested for single
event effects (SEE) and no Single Event Upsets (SEU),
Single Event Functional Interrupt (SEFI), Single Event
Latch-up (SEL), Single Event Burnout (SEB), Single Event
Gate Rupture (SEGR) and Single Event Transient (SET)
were observed.
Products manufactured on UltraCMOS technology do
not contain the bulk parasitics which cause latchup and
are typically found in Bulk CMOS designs. Additionally,
UltraCMOS offers superior resistance to all single event
effects and tolerance to total dose radiation of 100 KRad
(Si) or greater if needed.
Single Event Effects and the UltraCMOS
®
Solution
High-Reliability Power Management Products for Space
Peregrine’s new Power Management Products follow a steep tradition of high-performance and
efficiency. The flagship power management family supports DC-DC conversion with radiation hardened
Point-of-Load (POL) Synchronous Buck Regulators with integrated switches. These devices offer Single
Event Effects (SEE) immunity to a Linear Energy Transfer (LET) greater than 90 MeV.cm2 /mg and
radiation hardness of 100 KRad(Si), and replace multi-chip modules by offering superior performance,
smaller size and reduced weight in sensitive space applications.
NEW
NEW
NEW
For years, IC and process designers have
been interested in UltraCMOS® Silicon-
on-Sapphire (SOS) technology as high-
performance alternative to high-voltage
RF processes such as SiGe and GaAs.
Today, engineers around the world benefit from
not only the performance advantages, but also the
fundamental properties of UltraCMOS which make it
an environmentally friendly option.
Leave a Smaller Footprint…And Less eWaste
Adding to the potential environmental
advantages, UltraCMOS technology enables high
levels of monolithic integration, resulting in smaller
die and fewer external components in the design.
Go Green…Not Toxic
As semiconductor processing materials and eWaste
are scrutinized by governments and industries around
the globe, growing concern over the toxicity and
carcinogenic nature of GaAs, along with its associated
arsenic slurries, continues to drive market leaders
toward more eco friendly technology solutions.
Low Power Consumption
Low parasitic advantages of standard silicon-on-
insulator (SOI) are strengthened with the UltraCMOS
process, which delivers minimum parasitic capacitance
and industry leading dispersion. When compared to
the high-voltage RF processes, UltraCMOS devices
consume less power.
Simply Designed. Simply Green. Only UltraCMOS
®
.
Peregrine is proud to offer RoHS-compliant, lead-
free (Pb-free) packaging for its UltraCMOS RFICs.
Pb-free packages utilize matte tin (Sn) plating, or for
select QFN packages NiPdAu plating, on to copper
lead frames. The reliability aspects of matte Sn plating
have been well-researched, including solderability
with both Pb-free and standard SnPb solders, and
whisker growth in accelerated termperature/humidity
conditions. NiPdAu plating provides a solderable
surface for both eutectic and Pb-free solders, is less
susceptible to oxidation, and provides long-term
storage and solderability.
As regulatory conditions change and new Pb-free
packaging solutions become available, Peregrine will
maintain its commitment to doing its part to preserve
our environment. If the Pb-free solution that you
require is not shown, please consult with Peregrine or
any of its worldwide sales representatives for solutions
to your specific need.
RoHS-Compliant Commercial Packaging Options
Going Green Starts on the Inside
The UltraCMOS process, a high-performance variation of Silicon-on-Insulator (SOI) process,
is not based on arsenic (as are all GaAs-based devices) but instead incorporates a sapphire
substrate, which intrinsically offers both environmental as well as RF benefits.
See Peregrine’s
Green Package Information sheet and Certificate of Conformance to learn more.
Wire-bond Die
and Flip Chip
All dimensions are listed in millimeters (width x length x height) and are approximate.
See product datasheets for exact dimensions.
6L SC70
1.3 x 2.0 x 1.0
24L 4x4 QFN
4.0 x 4.0 x 0.9
48L QFN
7.0 x 7.0 x 0.9
6L DFN
3.0 x 3.0 x 0.9
Fused and Isolated
versions
16L 3x3 QFN
3.0 x 3.0 x 0.75
20L 4x4 QFN
4.0 x 4.0 x 0.9
32L 5x5 QFN
5.0 x 5.0 x 0.9
8L MSOP
3.0 x 3.0 x 1.1
Regular and exposed
ground paddle
12L 2x2 QFN
2.0 x 2.0 x 0.60
12L 3x3 QFN
3.0 x 3.0 x 0.75
10L 2x2 QFN
2.0 x 2.0 x 0.45
8L 1.5x1.5 DFN
1.5 x 1.5x 0.50
Designing for tomorrow’s challenging RF applications
requires great products and great technical support.
From our engineering excellence, to streamlined
manufacturing and technical sales and applications
support, Peregrine Semiconductor is committed
to a complete product solution. Choose among
comprehensive datasheets, application notes, tutorials,
reference designs and other engineering resources, all
developed to help get your design to market on time.
Design and Application Support
Application Notes
AN10 Connecting the PE3336, PE9601, and PE9701
to a Serial Bus Interface
AN12 Considerations for Using the PE323x/PE333x
in Fractional-N or Sigma-Delta Designs
AN15 Impedance Matching the PE4210/20/30 RF
Switches for 75 W Applications
AN16 Using Peregrine PLL in System Clock
Applications
AN17 OC-12 622.08 MHz Reference Clock Design
AN18 RF Switch Performance Advantages of
UltraCMOS
®
Technology over GaAs Technology
AN20 Multi-Port Handset Switch S-Parameters
AN22 Migrating from PE9702 to PE97022
AN23 Migrating from PE9704 to PE97042
AN24 Migrating from PE9763 to PE97632
AN26 Advantages of UltraCMOS
®
DSAs with
Serial-Addressability
AN27 Using Blocking Capacitors with UltraCMOS
®
Devices
AN28 Using the DTC with I
2
C Operation
AN29 DTC Theory of Operation
AN32 Radiation-Hardened Power Management
Solution for Xilinx Virtex-5 Space-Grade FPGAs
AN33 5-bit and 6-bit RF Digital Step Attenuator
Compatibility
AN34 Implementing Design Features of the PE9915x
Point-of-Load Buck Regulator
Online Applications Support Materials
Product Documentation: Reference libraries show all documentation available for each product.
Application Notes: Use our application notes to help design for tomorrow’s challenging RF applications.
Datasheet Library: Links to all datasheets, organized by part type and part number.
Package Information: Shows package dimensions and includes material listing for each package.
Technical FAQs: Search our Frequently Asked Questions database.
Contact Apps Support: Submit a help ticket to our Applications Engineering team.
Online Support System – support.psemi.com
Visit our website to find the technical resource you need.
Product Documentation Knowledge Base
and FAQs
Ask a Question
psemi.com
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Peregrine Semiconductor
Corporation
9380 Carroll Park Drive
San Diego, CA USA 92121
Phone: 858-731-9400
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463-943 South Korea
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Taipei, Taiwan 11281
Phone: +886-952816198
Fax: +886-2-2822-5867
High-Reliability Products
Americas
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San Diego, CA USA 92121
Phone: 858-731-9475
E-mail: Sales_HiRel@psemi.com
Europe, Asia Pacific
Merlin House, Brunel Way,
Theale, Berkshire
RG7 4AB
United Kingdom
Phone: +44-118-902-6520
For the latest product and sales
information, please visit our Web
site at www.psemi.com
© 2012 Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo and UltraCMOS are registered trademarks, and
HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.
DS#73-0009-16 Printed in USA 7/12
How to Contact Us
UltraCMOS®
Foundry Services
Peregrine’s UltraCMOS RF and mixed-signal wafer
foundry services offer benefits in speed, power,
integration and cost. Our comprehensive portfolio of
Process Design Kits, standard cell libraries, IP offerings
and design services delivers many solutions for today’s
competitive RF wireless and broadband application
challenges. For quick-turn prototyping service, we offer
Multi-Project Runs (MPR) on a scheduled basis. This
approach enables rapid, low-cost device evolution from
design to limited or full production volumes.
At Peregrine Semiconductor, our goal is to ensure
customers achieve higher performance integrated
circuits without a higher price tag. Contact us at
foundry@psemi.com for more information.
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and Support
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By selecting Peregrine’s
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you can count on
our expertise and
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throughout the entire
foundry process.
Changing RF Design. Forever.TM
