MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features * Collector-Emitter Sustaining Voltage - * * * * * * VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60 Vdc - MJE171, MJE181 = 80 Vdc - MJE172, MJE182 DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Machine Model, C Human Body Model, 3B Pb-Free Packages are Available* http://onsemi.com 3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 - 60 - 80 VOLTS 12.5 WATTS TO-225AA CASE 77-09 STYLE 1 3 2 1 MARKING DIAGRAM MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Symbol MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 Emitter-Base Voltage VCB VCEO Value Unit 60 80 100 Vdc 40 60 80 VEB 7.0 Vdc IC 3.0 6.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 12.5 0.012 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.5 0.1 W W/_C TJ, Tstg -65 to +150 _C Collector Current - Continuous - Peak Operating and Storage Junction Temperature Range YWW JE1xxG Vdc Y WW JE1xx G = Year = Work Week = Specific Device Code x = 70, 71, 72, 80, 81, or 82 = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 10 1 Publication Order Number: MJE171/D MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Max Unit qJC 10 _C/W qJA 83.4 _C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max VCEO(sus) 40 60 80 - - - - - 0.1 0.1 0.1 - - 0.1 0.1 - 0.1 50 30 12 250 - - - - - 0.3 0.9 1.7 - - 1.5 2.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TC = 150C) (VCB = 80 Vdc, IE = 0, TC = 150C) (VCB = 100 Vdc, IE = 0, TC = 150C) MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) ICBO IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.5 Adc, VCE = 1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) - 1.2 Vdc fT 50 - MHz - - 60 40 - Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 1) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE171/MJE172 MJE181/MJE182 1. fT = hfe* ftest. http://onsemi.com 2 Cob pF PD, POWER DISSIPATION (WATTS) MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) TA 2.8 TC 14 2.4 12 2.0 10 1.6 8.0 TC 1.2 6.0 0.8 4.0 TA 0.4 2.0 0 0 20 40 80 60 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating VCC +30 V 1K 500 300 200 RC 25 ms +11 V SCOPE RB t, TIME (ns) D1 51 tr 100 0 -9.0 V tr, tf 10 ns -4 V DUTY CYCLE = 1.0% RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. 50 30 20 td 10 5 3 2 NPN MJE181/182 PNP MJE171/172 1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 3 5 10 Figure 3. Turn-On Time Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 VCE = 30 V IC/IB = 10 VBE(off) = 4.0 V TJ = 25C qJC(t) = r(t) qJC qJC = 10C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 Figure 4. Thermal Response http://onsemi.com 3 10 20 50 100 200 MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) ACTIVE-REGION SAFE OPERATING AREA 10 5.0 5.0 100ms IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 10 500ms 2.0 1.0 dc 0.5 0.2 0.1 0.05 0.02 0.01 1.0 5.0ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO MJE171 MJE172 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100ms 2.0 500ms 1.0 5.0ms 0.5 TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW MJE181 RATED VCEO MJE182 0.2 0.1 0.05 0.02 0.01 1.0 100 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. MJE171, MJE172 Figure 6. MJE181, MJE182 The data of Figures 5 and 6 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) t 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperature, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor - average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 10K 100 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 1K 500 300 200 ts 100 tf 50 30 20 PNP MJE171/MJE172 NPN MJE181/MJE182 70 C, CAPACITANCE (pF) 5K 3K 2K t, TIME (ns) dc 50 Cib 30 20 Cob NPN MJE181/182 PNP MJE171/172 10 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 TJ = 25C 0.5 1 2 3 5 10 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Figure 7. Turn-Off Time http://onsemi.com 4 30 50 MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) ORDERING INFORMATION Device MJE170 MJE170G MJE171 MJE171G MJE172 MJE172G MJE180 MJE180G MJE181 MJE181G MJE182 MJE182G Package Shipping TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) http://onsemi.com 5 500 Units / Box MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE AA E A1 Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. A DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 L 2X STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. 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