2N5172 NPN
2N6076 PNP
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5172 and
2N6076 are complementary silicon small signal
transistors designed for general purpose applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 100 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=25V 100 nA
ICBO V
CB=25V, TA=100°C 10 μA
ICES V
CE=25V 100 nA
IEBO V
EB=5.0V (2N5172) 100 nA
IEBO V
EB=3.0V (2N6076) 100 nA
BVCEO I
C=10mA 25 V
VCE(SAT) I
C=10mA, IB=1.0mA 0.25 V
VBE(SAT) I
C=10mA, IB=1.0mA 0.80 V
VBE(ON) V
CE=10V, IC=10mA 0.5 1.2 V
hFE V
CE=10V, IC=10mA 100 500
hfe V
CE=10V, IC=10mA, f=1.0kHz 100 750
fT V
CB=5.0V, IC=2.0mA 200 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 1.0 13 pF
R1 (7-February 2014)
www.centralsemi.com
2N5172 NPN
2N6076 PNP
COMPLEMENTARY
SILICON TRANSISTORS
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (7-February 2014)
2N5172 NPN
2N6076 PNP
COMPLEMENTARY
SILICON TRANSISTORS
R1 (7-February 2014)
www.centralsemi.com
NPN TYPICAL ELECTRICAL CHARACTERISTICS
2N5172 NPN
2N6076 PNP
COMPLEMENTARY
SILICON TRANSISTORS
R1 (7-February 2014)
www.centralsemi.com
PNP TYPICAL ELECTRICAL CHARACTERISTICS
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which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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