TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs (Chip Form) Features High power - Pigg = 24 dBm at f = 15 GHz High gain - Giggs = 8 dB at f = 15 GHz Suitable for Ku-Band amplifier * Jon implantation * Chip form RF Performance Specifications (T, = 25 C) JS8851-AS Type Number (Chip) Characteristic Symbol Condition Unit Min. Typ. Max Output Power at 1B 18GHz 4B 23.0 24.0 - Compression Point Pras m 18GHz - 23 - Power Gain at 1dB 1SGHz 7.0 8.0 - . . Grae dB Compression Point 18GHz - 7.0 - Vps = 10V 15GHz - 0.08 0.14 Drain Current los A 18GHz - 0.09 0.14 15GHz - 26 - Power Added Efficiency Nagg % 18GHz2 ~ 18 - Electrical Characteristics (T, = 25 C) JS8851-AS Type Number (Chip) Characteristic Symbol Condition Unit Min. Typ. Max _ Vps=3V _ - Trans-conductance gm ipg=0.09A mS 60 . Vps=3V . Pinch-off Voltage Vesoit Ipg=3mA Vv 2.5 3.5 5 : Vps=3V Saturated Drain Current loss Vgg=0V A - 0.2 0.25 Gate to Source Breakdown Voltage Veso lgg=-SHA Vv 5 - - : Channel Thermal Resistance Rth (c-c) to case Cw - 40 75 The information contained here is subject to change without notice. The information containedhereinis presentedonly as guide for the applications of our products. No responsibilityis assumed by TOSHIBA for any infringements of patentsor other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patentor Patentrights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communicationequipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equip- ments which require high quatity and/or reliability, and in equipments which could have major impact to the welfareof humaniife (atomic energy control, spaceship. traffic signal, combustioncontrol, all types of safety devices, etc.). TOSHIBAcannot accept liabilityto any damage which may occur in case these TOSHIBA products were used in the mentionedequipments without prior consultationwith TOSHIBA. TOSHIBA CORPORATION Me 9097250 0021836 350 MW10110196 V7JS8851-AS Absolute Maximum Ratings (T, = 25 C) Type Number J$8851-AS (Package Code) (Chip) Characteristic Symbol Unit Rating Drain Source Voltage Vos Vv 15 Gate Source Voltage Ves Vv - Drain Current Ip A 0.25 Total Power Dissipation (Tc = 25C) Py WwW 2 Channel Temperature Ten *c 175 Storage Temperature T stg C -65~175 Power Dissipation vs. Case Temperature (W) 2i7 MW10110196 2.5 0 40 80 120 160 200 T. (C) Mme 9097250 00214837 29? TOSHIBA CORPORATIONChip Outline 100 Unit in pm O: Drain Contact Pad (1 wire) S: Source Contact Pad (6 wires) G: Gate Contact Pad (1 wire) Die thickness 90+20 pm Assembly Precautions for Chip JS8851-AS The operations must be performed in a clean and dry environment. The chips must be kept in the same environment when they are not used. All test instruments, assembly machines, benches, tweezers and operators should be grounded to avoid damage due to electrostatic disharge. Careful attention must be paid in handling chips with tweezers because GaAs is more brittle than Si. Die Attachment Die attachment can be accomplished with Au-Sn preform in nitrogen atmosphere. The operating temperature must be 290+ 10C for the preform to be well melted. The operating time should be kept within one minute. Wire Bonding Bonding should be performed with thermal compression wedge bonder in nitrogen atmosphere. The recommended condi- tions of wire bonding are as follows: (1) Operating temperature (2) Operating time........... (3) Bonding wire .......:.... TOSHIBA CORPORATION 200+ 10C 5 minutes max. 25 um diameter pure Au me 9097250 0021438 1c3 MW10110196JS8851-AS RF Performances f= 15 GHz Vps = iov Ips = 0.08A Py | 24 "| ~ a g 4 3 22 40 a 4 30 20 = <1 | __pead 20 LJ Ln 10 18 0 10 12 14 16 18 20 Pin (dBm) = 18 GHz Vos * lov Ipg = 0.094 24 Py _ a A 3 22 br 40 a 30 ane 10 18 0 Lo 12 14 16 18 20 Pin (dBm) Nadd(%) Nada () 4/7 MW10110196 Mi 9097250 0021835 ObT TOSHIBA CORPORATIONJS8851-AS Drawing of Matching Network for JS8851-AS (f=15 GHz) Unit in mm INPUT OUTPUT coc aac ow _ ry } C N A xy a C + wy ae 4 N = JI 0-6 mc a2 2.0 ,230.5 (A1203) t20.25 mm (218 GHz) INPUT OUTPUT cl2cS = = cS 0 d F i [ | CC L. ne a 0 OO 0 2.9 Er=10.5 (A103) t=0.25 mm mM 9097250 00214640 64], TOSHIBA CORPORATION MW10110196 5/7JS8851-AS JS8851-AS S-Parameters (MAGN, and ANGLES) Vos = 10 V, Ips = 100 7a Kp Ry = =e" FREQUENCY (GH2) Sil $12 $21 S22 2 0.95 55 10.047 56 | 4.56 137 | 0.58 -33 3 0.90 ~79 10.063 41 } 4.11 118 | 0.55 -47 4 0.86 -101 10.074 28 13.65 101 | 0.52 ~60 5 0.83 -120 {0.079 17 73.22 85 | 0.50 -71 6 0.81 ~137 10.082 8 [2.84 71 | 0.48 -82 7 0.80 -152 (0.082 -1 /2.51 $8 | 0.47 ~92 8 0.79 166 |0.080 -8 | 2.23 46 10.47 -101 9 0.79 ~178 [0.077 14 11.98 34 | 0.48 -111 10 0.80 171 {0.072 -20 11.77 23 | 0.49 ~120 1l 0.81 162 |0.068 ~24 11.58 13 | 0.50 ~129 12 0.82 153 [6.063 -28 {1.41 3, 0.52 -138 13 0.83 145 4|0.058 -30 11.26 -7 10.55 -146 14 0.84 137 10.053 ~32 11.13 ~16 | 0.57 -154 15 0.85 130 |0.049 ~32 }1.01 -25 |}0.59 ~162 16 0.86 124 40.045 -31 {0.90 ~34 | 0.62 170 17 0.87 118 10.042 ~29 |0.80 -~42 10.65 -178 18 0.88 113 40.040 -26 10.71 -50 | 0.67 175 Me 9097250 0021841 718 6/7 MW10110196 TOSHIBA CORPORATIONJS8851-AS Equivalent Circuit (Includes normal bonding wires) JS8851-AS : Vps = 10, Ipg = 100 mA Gate La Rg 2 Rdg Rd Ld Drain al AY WO Cgs Cds m L $ ) = SRds Rgs RS Ls gm = 66 mS T = 5.3 ps Rg = 1.39 2 Source Rs = 0.76 2 Rd = 1.302 Rgs = 1.20 2 Bonding wire condition Length . Number Approx.) Dia. Rdg = 0.01 2 (pcs) ( FP) (um) Rds = 200 Q 03 35 Cgs = 0.63 pF Source : Drain 1 0.4 625 Cdg = 0.05 pF Cds = 0.26 pF Gate 1 0.4 925 Lg = 0.39 nH Ls = 0.02 nH Me 9097250 O0eld4e 654 TOSHIBA CORPORATION MW10110196 V7