LTTEELTAELESEMLH 63 TO INVERTER SCR's 108 270 AMPERES GE TYPE c48/C148 c49/C149 C154, 156 C155, 157 C158, 159 C164, 165 C354, 355 C358 CONSTRUCTION ALL ALL DIFFUSED DIFFUSED AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING GATE GATE GATE GATE GATE GATE ELECTRICAL SPECIFICATIONS { VOLTAGE RANGE FORWARD CONDUCTION IT (RMS) ox: forward conduction sinusoidal @ 60Hz @ 600 Hz @ 1200 Hz @ 2500 Hz @ 5000 Hz one current Max. 12t (A2 sec) Max. thermal Impedance (C) for to Typical turn-on time ({isec) Turn-off time @ rated voltage and Ty Vr = 50V min. (Lsec) @ 20V/ sec reapplied @ 100V/ sec reapplied 200V/ Lisec reapplied . -rise of on-state difat current (A/ Ty Junction operating temperature range (C) BLOCKING Critical rate-of-rise off-state dv/dt voltage exponential to rated VD RM @ Max. T (V/ sec) FIRING Max. required gate current to trigger lor @ 40C @ 125C required voltage to trigger Vet 9 40 " @125C _(Min.) VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 100 150 200 PACKAGE TYPE PACKAGE OUTLINE NO. 110/63 110/63 110/63 110/63 110/63 1000 4150 35 2 wl" STUD 109/108.1 110 110 110 110 110 1800 13,200 3 2 20 25 C358E C358M C3588 C358N C358T C358P C358PA C358PB %" STUD %' STUD ie 109, 108 109 280 146HIGH SPEED Silicon Controlled Rectifier 600 VOLTS 110A RMS The General Electric C154, C155, C156 and C157 Silicon Controlled Rec- tifiers are designed for power switching at high frequencies. These are all diffused Pic-Pac devices employing the field proven amplifying gate. FEATURES: High di/dt ratings. High dv/dt capability with selections available. Excellent surge and I*t ratings providing easy fusing. Guaranteed maximum turn-off time with selections available. Rugged hermetic package with long creepage path. MAXIMUM ALLOWABLE RATINGS C154, C156 C155, C157 AMPLIFYING GATE C154/155 C156/157 REPETITIVE PEAK OFF-STATE | REPETITIVE PEAK REVERSE NON-REPETITIVE PEAK TYPES VOLTAGE, Vogm! VOLTAGE, Varn! REVERSE VOLTAGE, Vasu! Ty = -40C to +125C Ty = -40C to +125C Ty = +128C C154A, CI155A, C156A, CIS7A 100 Volts 100 Volts 160 Volts C154B, C155B, C156B, C157B 200 200 260 C154C, C155C, C156C, C157C 300 300 380 C154D, C155D, C156D, C157D 400 400 480 CI54E, C155E, C156E, CI157E 500 300 600 C154M, C155M, C156M, C157M 600 600 720 1 Half sinewave waveform, 10 ms max. pulse width. RMS On-State Current, Ipaamgy-- +e teen teeter eens 110 Amperes Peak One Cycle Surge (Non-Repetitive) On-State Current, Iygy (60 Hz)... +--+ - ee eee ee eee eee 1800 Amperes Peak One Cycle Surge (Non-Repetitive) On-State Current, Iygy (50 Hz)... -- 2-1 eee ee eee 1700 Amperes Critical Rate-of-Rise of On-State Current, Non-Repetitive ... 1... 2-26 eee ee ee eee 800 A/ys F Critical Rate-of-Rise of On-State Current, Repetitive... 2... ee te ees 500 A/ys t It (for fusing) for times > 1.5 milliseconds .... 2.6... 5-660 eee 9,500 (RMS Ampere)? Seconds I*t (for fusing) for times > 8.3 milliseconds .... 2.6... 02 eee ee eee 13,500 (RMS Ampere)? Seconds Average Gate Power Dissipation, Pg(ay)-- +--+ ttt tee teeta 2 Watts Storage Temperature, Tyg. 6 eee teen eens -40C to +150C Operating Temperature, Ty... 0.0 tte eens -40C to +125C 150 Lb.-In. (Max.), 125 Lb.-In. (Min.) 17 N-m (Max.), 14 N-m (Min.) Stud Torque eee we ee hee Oe eee ew ew ee ee ew +di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated VpRpM; 20 volts, 20 ohms gate trigger source with 0.5ys short circuit trigger current rise time. 823C154, C156 C155, C157 CHARACTERISTICS TEST SYMBOL, | MIN. TYP. MAX. UNITS TEST CONDITIONS Repetitive Peak Reverse IRRM _ 5 12 mA Ty = +25C and Off-State Current and IprM V = VprM = Var Repetitive Peak Reverse IRRM _ 12 17 mA Ty = 125C and Off-State Current and IppM V = Vopr = VrrM Thermal Resistance Resc _ 2 3 C/Watt | Junction-to-Case Critical Rate-of-Rise of dv/dt Viusec | Ty = +125C, Gate Open. Vprmy = Rated, Off-State Voltage (Higher Linear or Exponential Rising Waveform values may cause device . Vv switching) Exponential dv/dt = ee (.632) C154/C156 200 500 - C155/C157 100 300 _ For higher minimum dv/dt selections consult factory. Holding Current Iq - 100 - mAdc | Tc = +25C, Anode Supply = 24 Vdc. Initial On-State Current = 2 Amps. DC Gate Trigger Current Igt _ 50 150 mAdc | Tc = +25C, Vp = 6 Vde, R, = 3 Ohms _ 100 200 Tc = -40C, Vp = 6 Vdc, Ry = 3 Ohms _ 30 120 To = +125C, Vp = 6 Vdc, Ry = 3 Ohms DC Trigger Voltage Vot 3.0 5.0 Vde Te = -40C to 0C, Vp = 6 Vdc, Ry, = 3 Ohms _ 1.25 3.0 Tc = 0C to +125C, Vp = 6 Vdc, Ry = 3 Ohms 0.15 - - Tc = +125C, VprM: Ry = 1000 Ohms Peak On-State Voltage Vim ~ 2.2 3.0 Volts To = +25C, Ipy = 500 Amps. Peak Duty Cycle < .01% Turn-On Delay Time tg - ] _ psec Teo = +25C, Ip = 50 Adc, Vppm, Gate Supply: 20 Volt Open Circuit, 20 Ohms, 0.1 usec max. rise time. Conventional Circuit tg psec (1) Te = +125C Commutated Turn-Off (2) Iqm = 150 Amps. Time (with Reverse (3) Vp = 50 Volts Min. Voltage) (4) Vprm (Reapplied) _ (5) Rate-of-Rise of Reapplied Off-State C154/C156 8 10 Voltage = 20 V/usec (linear) C155/C157 12 20 (6) Commutation di/dt = 5 Amps/usec. (7) Duty Cycle S .01% (8) Gate Bias During Turn-Off Interval = 0 Volts, 100 Ohms Conventional Circuit ta (diode) usec (1) Te = +125C Commutated Turn-Off (2) Ipm = 150 Amps. Time (with Feedback) (3) Ve =1 Volt ; Diode) (4) Vprm (Reapplied) _ (5) Rate-of-Rise of Reapplied Off-State C154/C156 V2 t Voltage = 20 V/usec C155/C157 - iS t (6) Commutation di/dt = 5 Amps/usec (7) Duty Cycle < .01% (8) Gate Bias During Turn-Off Interval = 0 Volts, 100 Ohms +Consult factory for specified maximum turn-off time. 824PEAK ON-STATE CURRENT~ AMPERES PEAK ON-STATE CURRENT AMPERES 2000 8 5 B 8 8 6 8 300 200 150 3 6 10 SINE WAVE DATA C154, C156 C155, C157 100 |o00 10K PULSE BASE WIDTH-MICROSECONDS 1. Maximum allowable peak on-state current vs. pulse width (Tc = 65C) 200 100 80 100 1000 10K PULSE BASE WIDTH-MICROSECONDS 2. Maximum allowable peak on-state current vs. pulse width (Tc = 90C) NOTES: (Pertaining to Sine and Rectangular Wave Current Ratings) 1. 2. 3. Switching voltage < 400 volts. Maximum ckt. dv/dt = 100 volts/usec. Required gate drive: 20 volts, 20 ohms, .5 usec rise time. Reverse voltage applied = VR < 400 volts. R-C Snubber ckt. = .25 uf, 5 ohms. Max. energy dissipated during reverse recovery to be 15% of total W-S/P shown or 0.03 W-S/P, whichever is least. Values of W-S/P are for Tj = 125C. 825C154, C156 C155, C157 1000 100 PEAK ON-STATE CURRENT- AMPERES 10 100 SINE WAVE DATA 1000 1OK PULSE BASE WIDTH-MICROSECONDS 3. ENERGY PER PULSE FOR SINUSOIDAL PULSES 50% DUTY CYCLE w fey Oo 200 ULSES PER se ON PEAK ON-STATE CURRENT-AMPERES o o 8 5 10 20 30.0 40 60 80 100 RATE OF RISE ON-STATE CURRENT AMPERES PER MICROSECOND 4. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. di/dt (Tc = 65C) 200 PULSES pE SECOND 100 80 PEAK ON - STATE CURRENT-AMPERES RATE OF RISE ON- STATE CURRENT AMPERES PER MICROSECOND 6. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. di/dt (Te = 90C) 826 25% DUTY CYCLE > a o 98 Oo oOo w o PEAK ON-STATE CURRENT - AMPERES @ oO n o 5 lo 20 30 40 60 80 100 RATE OF RISE ON'-STATE CURRENT AMPERES PER MICROSECOND 5. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. di/dt (Tce = 65C) 400 300 200 (50 100 80 60 PEAK ON-STATE CURRENT - AMPERES 5 10 20 300 (40 RATE OF RISE ON-STATE CURRENT AMPERES PER MICROSECOND 60 80 100 7. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. di/dt (Tc = 90C)PEAK ON-STATE CURRENT AMPERES PEAK ON-STATE CURRENT AMPERES PEAK ON-STATE CURRENT AMPERES WATT PULSE 4 C 0.8 di/dt =|00 AMPS/ySEC PULSE BASE WIDTH-MICROSECONDS 8. ENERGY PER PULSE VS. PEAK CURRENT AND PULSE WIDTH (di/dt = 100 A/usec) 1000 800 600 500 400 300 200 1a0 a0 60 50 40 30 di/di = 25 AMPS/.SEC PULSE BASE WIDTH-MICROSECONDS 9, ENERGY PER PULSE VS. PEAK CURRENT AND PULSE WIDTH (di/dt = 25 A/usec) 1000 B00 WATT SEC / 800 O28 0.3] 04/05 0.8 $00 - = . 400 300 200 100 80 60 50 40 30 20 di/dt = 5 AMPS/,SEC PULSE BASE WIDTH -MICROSECONDS 10. ENERGY PER PULSE VS. PEAK CURRENT AND PULSE WIDTH (di/dt = 5 A/usec) 827 C154, C156 C155, C157INSTANTANEOUS ON-STATE CURRENT - AMPERES PEAK HALF SINE WAVE ON-STATE CURRENT - AMPERES C154,C156 C155, C157 Ty = 125C Ty = 25C | 2 3 4 INSTANTANEOUS ON-STATE VOLTAGE - VOLTS INSTANTANEOUS GATE VOLTAGE ~ VOLTS a han @ 11. MAXIMUM ON-STATE CHARACTERISTICS 3,000 T oO Ww no a a & 2,000 ue INITIAL Ty = -40C TO +125C & ae 1,800 = ee z6 bee Fu 1,000 p zou , eA. aot 7 swe 800 #23 Ie ef 600-7523 4.6 68 10 20. 30 40 60 THE LOCUS OF POSSIBLE OC TRIGGER POINTS LIE OUTSIDE THE BOUNDARIES SHOWN AT VARIOUS CASE TEMPERA 20v, 202 LOADLINE 2 3 456 8 10 2 3.456 6W INSTANTANEOUS GATE CURRENT - AMPERES 12. GATE TRIGGER CHARACTERISTICS AND POWER RATINGS INITIAL Ty = ~40C TO +125C > NUMBER OF CYCLES AT 60Hz 13. MAXIMUM ALLOWABLE SURGE (NON-REPETITIVE) CURRENT \ 1.5 2 3 4 6 8 PULSE BASE WIDTH - MILLISECONDS 14. SUB-CYCLE SURGE (NON-REPETITIVE) ON-STATE CURRENT AND I*t RATING a 9 u 9 nv | | | TRANSIENT THERMAL IMPEDANCE - C PER WATT ml ISECONDS- SECONDS 4 Te | 15. TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE 828RECOVERED CHARGE DATA C154, C156 C155, C157 t's 4 20 o ~ 500 @ $98 2 2 200 10 ad os 100 2 500 3 1 +4,250 8 6 TM 2 2 5 MPERES 200 a4 oS ~ uu 100 g = 8 : =, e T7m250 I & i 6 AMPERES ' 5 by = qt! Oo = oa fa) a ul Qa os 2 Wl os > Ww So 0.4 3 wy oc 03) 2 3 4 5 8 10 20 30 ul 40 100 I 2 3 456 810 20 30 405060 80 100 REVERSE di/dt (AMPERES/jt SEC) > REVERSE di/dt(AMPERES /u SEC) 17. TYPICAL RECOVERED CHARGE DATA (Ty = 125 C) 16. TYPICAL RECOVERED CHARGE DATA (Ty = 25C) SINEWAVE CURRENT WAVEFORM SINEWAVE CURRENT WAVEFORM OUTLINE DRAWING | 4 inches | METRIC inches | METRIC E SY M SYM MM NOTES | | SEATING PLANE My IN, | MAX.| MIN. | MAX. MIN. | MAX.| MIN. | MAX. G 4 Cn LA A | 1020/1140] 25.90]28.96/ L | 330) | 838) Fe WHITE S SEE NOTE D4 B a a | 390] 500| 9s0/t270| mw | 275| 325| 698} 826 Tan No t s-% Cc |1.570|1.750 | 39.87/4445 | N | 065) 095] 165] 2.41 aK D |6.000\6.390 |I52.40/162.31| P | 840] 910} 2133] 23.11 it To | E 16.850]7,500 |i73.99}19050|} @ 425) 499| 1079) 12.67 SEE NOTE 2 s F | 797| 827] 2024/21.01| R 920} | 2336] ite T @ G6 140} 150} 355] 3.61| T | 060| | 1.57] 5 Vr V H | | 300 7.62 To | J 500| 610| 12.70/15.49{ V_ |1.052{1.063| 26.72 [27.00 i D F k | .260| 28! | 660} 7.14 TERMINAL | TERMINAL | TERMINAL | TERMINAL $s D MODEL @) THREAD SIZE AUX CATHODE | ANODE C154, CI55 GATE | CATHODE + ~ |l72 20UNF-2A NOTES: |. GATE & AUX. CATHODE LEADS SUPPLIED LIGHTLY TWISTED TOGETHER. 2.FLEXIBLE COPPER LEAD. 3, ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT. MATERIAL OF HARDWARE {S STEEL, CAD PLATED. 4. "R DIM. 1S DIA. OF EFFECTIVE SEATING AREA. 5."T" DIM. IS AREA OF UNTHREADED PORTION. COMPLETE THDS. ARE WITHIN 2.5 THREADS OF SEATING PLANE. 6. ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED. SEATING PLANE A . METRIC METRIC = ; sym | INCHES ea sym] INCHES aR NOTES _ MIN. | MAX, | MIN. | MAX. MIN. | MAX,] MIN. | MAX. ty ~ A |t.o2z0|1.190125.90/28.96/ L | 590] 640] 14.98/16.26 _t B | 390] 500] 9.90]12.70 c |l.460REF.| 7.92REF.| N | .058] .O70] 1.47| 1.78 1 . OD | 1660/1800 | 42.16} 45.72 ER N . & | 312 REF | 7.92 REF | P | 840) 910/21.33}23.11 ' F | 797) 827] 20.24] 21.01 MODEL TERMINAL | TERMINAL | TERMINAL s G | 060| 075] 152] 191] @ 425| 499] 10.79| 12.67 THREAG SIZE H | 385] 415] 9.77/10.54)] T } 060) | t.$2) 2 C156, C157 GATE CATHODE | ANODE I/2-20 UNF-2A J | 445] 485]11.30]12.32} Vv |1.052]1.063] 26.72] 27.00 + k | .198] 212] 5.02] 5.38 NOTES: lL. ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT. MATERIAL. OF HARDWARE [S STEEL, CAD PLATED. 2. "T" OIM. IS AREA OF UNTHREADED PORTION. COMPLETE THDS. ARE WITHIN 2.8 THREADS OF SEATING PLANE. 3. ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED. 829