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FJN3303F — High Voltage Fast-Switching NPN Power Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJN3303F Rev. A1 1
December 2009
FJN3303F
High Voltage Fast-Switching NPN Power Transistor
Features
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Charge r
• Green packaging
Absolute Maximum Ratings TA = 25°C unless otherwise noted
* Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
Thermal Characteristics TA = 25°C unless otherwise noted
Ordering Information
Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
ICCollector Current (DC) 1.5 A
ICP Collector Current (Pulse) * 3 A
IBBase Current (DC) 0.75 A
IBP Base Current (Pulse) * 1.5 A
TJJunction Temperature 150 °C
TSTG Storage Temperature range -65 to +150 °C
Symbol Parameter Value Units
PDTotal Device Dissipation TC = 25°C
TA = 25°C1.1
650 W
mW
RθJC Thermal Resistance Junction-Case 48 °C/W
RθJA Thermal Resistance Junction-Ambient 190 °C/W
Part Number Marking Info. Package Packing Method Remarks
FJN3303FBU J3303F TO-92 (Straight) BULK Green EMC
FJN3303FTA J3303F TO-92 (Form) AMMO Green EMC
TO-92
1
1. Emitter 2. Collector 3.Base
FJN3303F — High Voltage Fast-Switching NPN Power Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJN3303F Rev. A1 2
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 500μA, IE = 0 700 V
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V
BVEBO Emitter-Base Breakdown Vo ltage IE = 500μA, IC = 0 9 V
ICBO Collector Cut-off Current VCB = 700V, IE = 0 10 μA
IEBO Emitter Cut-off Current VEB = 9V, IC = 0 10 μA
hFE1
hFE2
DC Current Gain VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1.0A 14
523
VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.25A
IC = 1.5A, IB = 0.5A
0.5
1.0
3.0
V
V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.25A 1.0
1.2 V
V
fTCurrent Gain Bandwidth Product VCE = 10V, IC = 0.1A 4 MHz
tON Turn On Time VCC = 125V, IC = 1A
IB1 = - IB2 = -0.2A
RL = 125Ω
1.1 μs
tSTG Storage Time 4.0 μs
tFFall Time 0.7 μs
FJN3303F — High Voltage Fast-Switching NPN Power Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJN3303F Rev. A1 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
Figure 5. Resi st iv e Lo a d Switc h in g Time Figure 6. Resi st iv e Lo a d Switc h in g Time
012345678910
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IB = 120 mA
IB = 40 mA
IB = 2 0 mA
IC [A], COLLECTOR CURRENT
VCE [V ], C O L L E C T OR-EMITT ER VOLT A GE
1E-3 0.01 0.1 1
1
10
100
VCE = 2V
TA = 25 oC
TA = 75 oC
TA = 125 oC
TA = - 25 oC
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
TA = 75 oC
TA = 25 oC
TA = - 25 oC
TA = 125 oC
IC = 4 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
TA = 75 oC
TA = 25 oC
TA = - 25 oC
TA = 125 oC
IC = 4 IB
VBE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
0.1 1
0.01
0.1
1
10
tF
tSTG
IB1 = - IB2 = 0.2A
VCC = 125V
tSTG & tF [μs], S WITCHING TIME
IC [A], COLLECTOR CURRENT
0.1 1
0.01
0.1
1
10
tF
tSTG
IB1 = 120mA, IB2 = - 40mA
VCC = 310V
tSTG & tF [μs], SWITC H ING TIME
IC [A], COLLECTOR CURRENT
FJN3303F — High Voltage Fast-Switching NPN Power Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJN3303F Rev. A1 4
Typical Performance Characteristics (Continued)
Figure 7. Forward Biased Safe Operating Area Figure 8. Reverse Biased Safe Operating Area
Figure 9. Power Derating
0.1 1 10 100 1000
1E-3
0.01
0.1
1
10
TC = 25oC
Single Pulse
IC (DC)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTO R-EMITTER VOLTAGE
100 1000
0.1
1
10
IB1 = 1A, RB2 = 0
VCC = 50V, L =1 mH
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TC = 25 oC
TA = 25 oC
PC [W], COLLECTOR POWER DISSIPATION
TA [oC], AMBIENT TEMPERATURE
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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