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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. General Description Fairchild's brand-new DC-AC module is designed for a power stage that needs more compact design. And the Press-fit technology provides simple and reliable mounting. This module is optimized for the application such as solar inverter where a high efficiency and robust design are needed. Electrical Features * High Efficiency Package Code: F1 * Low Conduction and Switching losses * Low VCE(sat) : 1.1 V typ. @ Ic = 30 A * Low RDS(ON) : 90 m max. * Fast Recovery Body Diode Mechanical Features * Compact size : F1 Package * Press-fit contact technology Applications * Solar Inverter Certification * UL approved (E209204) Internal Circuit Diagram Absolute Maximum Ratings Symbol TC = 25oC unless otherwise noted. Description Rating Units 620 V 27 A Rectifier Diode VRRM Peak Repetitive Reverse Voltage IFav Diode Continuous Forward Current @ TC = 80C IFSM Diode Maximum Forward Surge Current 245 A I2 t I2t value 300 A 2s PD Maximum Power Dissipation 77 W TJ Operating Junction Temperature -40 to +150 C (c)2014 Fairchild Semiconductor Corporation FPF1C2P5MF07AM Rev. C1 @ TC = 25C 1 www.fairchildsemi.com FPF1C2P5MF07AM F1 Module solution for PV-Application July. 2014 FPF1C2P5MF07AM F1 Module solution for PV-Application Symbol TC = 25C unless otherwise noted. (Continued) Description Rating Units High-side IGBT VCES Collector-Emitter Voltage 620 V VGES Gate-Emitter Voltage 20 V IC Collector Current ICM Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD Maximum Power Dissipation TJ Operating Junction Temperature @ TC = 80C 39 A 90 A @ TC = 80C 22 A 90 A @ TC = 25C 231 W -40 to +150 C 620 V Low-side MOSFET VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain Current 20 V @ TC = 25C 36 A @ TC = 80C 27 A Limited by TJ max. IDM Pulsed Drain Current 156 A IS Continuous Source-Drain Forward Current 36 A ISM Maximum Pulsed Source-Drain Forward Current 156 A PD Maximum Power Dissipation 250 W TJ Operating Junction Temperature -40 to +150 C TSTG Storage Temperature -40 to +125 C 2500 V @ TC = 25C Module VISO Isolation Voltage Iso._Material Internal Isolation Material FMOUNT Mounting Force per Clamp Weight @ AC 1MIN Al2O3 20 to 50 Typ. Creepage Clearance N 22 g Terminal to Heatsink 11.5 mm Terminal to Terminal 6.3 mm Terminal to Heatsink 10.0 mm Terminal to Terminal 5.0 mm Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity / Tray FPF1C2P5MF07AM FPF1C2P5MF07AM F1 Tray 22 (c)2014 Fairchild Semiconductor Corporation FPF1C2P5MF07AM Rev. C1 2 www.fairchildsemi.com FPF1C2P5MF07AM F1 Module solution for PV-Application Absolute Maximum Ratings Symbol Parameter Conditions Min. Typ. Max. Units - - 1.9 V Rectifier Diode VF Diode Forward Voltage IF = 30 A - 1.45 - V IR Reverse Leakage Current VR = 620 V - - 25 A RJC Thermal Resistance of Junction to Case per Diode - - 1.62 C/W IF = 30 A @TC = 125C High-side IGBT Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 620 - - V ICES Collector Cut-off Current VCE = VCES, VGE = 0 V - - 25 A IGES Gate-Emitter Leakage Current VGE = VGES, VCS = 0 V - - 2.5 A On Characteristics VGE(th) Gate-Emitter Threshold Voltage VGE = VCE, IC = 30 mA 4 5.7 7 V VCE(sat) Collector-Emitter Saturation Voltage IC = 30 A, VGE = 15 V - 1.1 1.6 V IC = 30 A, VGE = 15 V @TC = 125C - 1.0 - V IC = 60 A, VGE = 15 V - 1.4 - V Switching Characteristics Qg Total Gate Charge VDS = 380 V, VGS = 0V...+15 V, ID = 30 A - 214 - nC RJC Thermal Resistance of Junction to Case per IGBT - - 0.54 C/W * Note : High-side IGBT is optimized for line frequency switching such as 50/60 Hz. High-Side FWD VFM Diode Forward Voltage IF = 15 A, VGS = 0 V - 1.75 2.25 V trr Reverse Recovery Time - 30 - ns Irr Reverse Recovery Current IF = 15 A dIF/dt = 1650 A/s Qrr Reverse Recovery Charge trr Reverse Recovery Time Irr Reverse Recovery Current Qrr Reverse Recovery Charge RJC Thermal Resistance of Junction to Case (c)2014 Fairchild Semiconductor Corporation FPF1C2P5MF07AM Rev. C1 IF = 15 A dIF/dt = 1500 A/s @TC = 125C per Diode 3 - 27 - A - 405 - nC - 43 ns - 38 - A - 814 - nC - - 1.61 C/W www.fairchildsemi.com FPF1C2P5MF07AM F1 Module solution for PV-Application Electrical Characteristics TC = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Units 620 - - V - - 25 A 2.5 A 3.8 5.3 V Low-Side MOSFET Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA IDSS Zero Gate Voltage Drain Current VDS = 620 V, VGS = 0 V IGSS Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V On Characteristics VGS(th) Gate-Source Threshold Voltage VGS = VDS, ID = 250 mA RDS(ON) Static Drain-Source On-Resistance ID = 27 A, VGS = 10 V - - 90 m ID = 27 A, VGS = 10 V @TC = 125C - 135 - m VSD Source-Drain Diode Forward Voltage 2.7 ID = 47 A, VGS = 10 V - 76 - m ISD = 27 A, VGS = 0 V - - 1.5 V ISD = 47 A, VGS = 0 V - 1.3 - V Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time EON Turn-On Switching Loss per Pulse EOFF Turn-Off Switching Loss per Pulse td(on) Turn-On Delay Time tr Rise Time VCC = 380 V ID = 27 A VGS = 10 V RG = 10 Inductive Load TC = 25C VCC = 380 V ID = 27 A VGS = 10 V RG = 10 Inductive Load TC = 125C - 57 - ns - 14 - ns - 240 - ns - 20 - ns - 440 - J - 113 - J - 53 - ns - 16 - ns - 257 - ns - 20 - ns - 719 - J td(off) Turn-Off Delay Time tf Fall Time EON Turn-On Switching Loss per Pulse EOFF Turn-Off Switching Loss per Pulse - 124 - J Qg Total Gate Charge VDS = 380 V, VGS = 0V...+10 V, ID = 27 A - 155 - nC RJC Thermal Resistance of Junction to Case per Chip - - 0.5 C/W (c)2014 Fairchild Semiconductor Corporation FPF1C2P5MF07AM Rev. C1 4 www.fairchildsemi.com FPF1C2P5MF07AM F1 Module solution for PV-Application Electrical Characteristics TC = 25C unless otherwise noted. (Continued) Fig 1. Typical Output Characteristics - IGBT Fig 2. Typical Output Characteristics - IGBT 90 90 20 V 15 V 12 V 10 V 8V 60 VGE = IC, Collector Current [A] IC, Collector Current [A] VGE = 30 60 20 V 15 V 12 V 10 V 8V 30 o o TC = 25 C 0 0.0 0.5 1.0 1.5 TC = 125 C 0 0.0 2.0 0.5 VCE, Collector-Emitter Voltage [V] Fig 3. Typical Saturation Voltage Characteristics - IGBT ZJC(t), Thermal Response [C/W] IC, Collector Current [A] 0 0.0 0.5 1.0 1.5 1 0.5 0.1 0.3 t2 0.02 0.01 0.01 0.005 Single Pulse 1E-4 * Notes : 1. ZJC(t) = 0.54 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZJC(t) 1E-3 0.01 0.1 1 t1, Rectangular Pulse Duration [sec] Fig 5. Typical Forward Voltage Drop vs. Forward Current - High-Side FWD Fig 6. Transient Thermal Response Curve - High-Side FWD 90 10 TC = 25C TC = 80C TC = 125C ZJC(t), Thermal Response [C/W] IF, Forward Current [A] t1 0.05 1E-3 1E-5 2.0 PDM 0.1 VCE, Collector-Emitter Voltage [V] 60 45 30 15 0 0.0 2.0 10 Common Emitter VGE = 15 V TC = 25C TC = 80C TC = 125C 30 75 1.5 Fig 4. Transient Thermal Response Curve - IGBT 90 60 1.0 VCE, Collector-Emitter Voltage [V] 0.5 1.0 1.5 2.0 2.5 VF, Forward Voltage [V] (c)2014 Fairchild Semiconductor Corporation FPF1C2P5MF07AM Rev. C1 3.0 1 0.5 0.3 0.1 t1 0.02 0.01 0.01 0.005 Single Pulse 1E-3 1E-5 3.5 PDM 0.1 0.05 1E-4 t2 * Notes : 1. ZJC(t) = 1.61 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZJC(t) 1E-3 0.01 0.1 1 t1, Rectangular Pulse Duration [sec] 5 www.fairchildsemi.com FPF1C2P5MF07AM F1 Module solution for PV-Application Typical Performance Characteristic Fig 7. On-Region Characteristics - MOSFET Fig 8. On-Resistance Variation vs. Drain Current and Gate Voltage - MOSFET 160 160 0.20 ID, Drain Current[A] ID, Drain Current[A] RDS(ON) [], 100 100 8080 6060 4040 2020 * Note: * Note: 250 pulse test ss pulse test 1.1.250 0 0 0 5 5 1010 1515 Drain to Source On-Resistance VGS = 10 V VGS = 20 V VGSV= GS = 20V 20 V 15V15 V 140 140 10V10 V 8V 8 V 120 120 6V 6 V 0.16 0.12 0.08 0.04 2020 0 40 VDS,VDrain-Source , Drain-Source Voltage[V] Voltage[V] DS Fig 9. On-Resistance Variation vs. Temperature - MOSFET 160 150 TC = 25C TC = 80C TC = 125C 2.00 IS, Reverse Drain Current [A] Drain to Source On-Resistance RDS(ON) [], [Normalized] 120 Fig 10. Body Diode Forward Voltage Variation vs. Source Current and Temperature - MOSFET 2.25 1.75 1.50 1.25 1.00 0.75 0.50 -50 * Notes: 1. VGS = 10 V 2. ID = 27 A -25 0 25 50 75 100 125 TC, Case Temperature [C] 150 0.5 60 30 0.6 0.9 1.2 1.5 1.8 2.1 Fig 12. Turn-On Loss vs. Gate Resistor Values - MOSFET 1.4 * Notes: 1. with an inductive load 2. VDS = 380 V, ID = 27 A 3. VGS = 10 V Eon, Turn-on Loss [mJ] 1.2 TC = 125C 0.3 90 VSD, Body Diode Forward Voltage [V] * Notes: 1. with an inductive load 2. VDS = 380 V, ID = 27 A 3. VGS = 10 V 0.4 120 0 0.3 175 Fig 11. Turn-Off Loss vs. Gate Resistor Values - MOSFET Eoff, Turn-off Loss [mJ] 80 ID, Drain Current [A] TC = 25C 0.2 0.1 TC = 125C 1.0 0.8 0.6 TC = 25C 0.4 0.2 0.0 0 5 10 15 20 25 Rg, Gate Resistance [] (c)2014 Fairchild Semiconductor Corporation FPF1C2P5MF07AM Rev. C1 30 0.0 35 6 0 5 10 15 20 25 Rg, Gate Resistance [] 30 35 www.fairchildsemi.com FPF1C2P5MF07AM F1 Module solution for PV-Application Typical Performance Characteristic (Continued) Fig 13. Turn-Off Loss vs. Drain Current - MOSFET Fig 14. Turn-On Loss vs. Drain Current - MOSFET 200 1.0 * Notes: 1. with an inductive load 2. VDS = 380 V, ID = 27 A 3. VGS = 10 V 4. Rg = 10 120 0.8 Eon, Turn-on Loss [mJ] Eoff, Turn-off Loss [uJ] 160 TC = 125C 80 TC = 25C 40 0 0 5 10 15 20 25 30 ID, Drain Current [A] TC = 125C 0.4 TC = 25C 0.2 0.0 0 5 10 15 20 25 ID, Drain Current [A] 30 35 Fig 16. Typical Forward Voltage Drop vs. Forward Current - Rectifier Diode 1 90 0.5 75 0.1 0.3 IF, Forward Current [A] ZJC(t), Thermal Response [C/W] 0.6 35 Fig 15. Transient Thermal Response Curve - MOSFET 0.1 0.05 0.01 * Notes: 1. with an inductive load 2. VDS = 380 V, ID = 27 A 3. VGS = 10 V 4. Rg = 10 0.02 PDM t1 0.01 0.005 Single Pulse 1E-3 1E-4 1E-5 1E-4 t2 * Notes : 1. ZJC(t) = 0.5 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZJC(t) 1E-3 0.01 0.1 TC = 25C TC = 80C TC = 125C 60 45 30 15 0 0.0 1 t1, Rectangular Pulse Duration [sec] 0.5 1.0 1.5 VF, Forward Voltage [V] 2.0 2.5 Fig 17. Transient Thermal Response Curve - Rectifier Diode ZJC(t), Thermal Response [C/W] 10 1 0.5 0.3 0.1 PDM 0.1 0.05 t1 0.02 0.01 1E-3 1E-5 0.01 0.005 Single Pulse 1E-4 t2 * Notes : 1. ZJC(t) = 1.62 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZJC(t) 1E-3 0.01 0.1 1 t1, Rectangular Pulse Duration [sec] (c)2014 Fairchild Semiconductor Corporation FPF1C2P5MF07AM Rev. C1 7 www.fairchildsemi.com FPF1C2P5MF07AM F1 Module solution for PV-Application Typical Performance Characteristic (Continued) FPF1C2P5MF07AM F1 Module solution for PV-Application Internal Circuit Diagram DC+ D1 D2 IN2 DC+ G1 G2 E1 E2 IN2 IN1 OUT1 OUT2 OUT1 OUT2 IN1 D4 D3 GM1 GM2 SM1 SM2 N1 N1 RT RT N2 TN2 RT R N2 N2 RT RT Package Outlines [mm] (c)2014 Fairchild Semiconductor Corporation FPF1C2P5MF07AM Rev. C1 8 www.fairchildsemi.com FPF1C2P5MF07AM F1 Module solution for PV-Application (c)2014 Fairchild Semiconductor Corporation FPF1C2P5MF07AM Rev. C1 9 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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