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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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©2014 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FPF1C2P5MF07AM Rev. C1
FPF1C2P5MF07AM F1 Module solution for PV-Application
July. 2014
FPF1C2P5MF07AM
F1 Module solution for PV-Application
General Description
Fairchild's brand-new DC-AC module is designed for a power
stage that needs more compact design. And the Press-fit techn-
ology provides simple and reliable mounting. This module is op-
timized for the application such as solar inverter where a high
efficiency and robust design are needed.
Electrical Features
• High Efficiency
• Low Conduction and Switching losses
•Low V
CE(sat) : 1.1 V typ. @ Ic = 30 A
•Low R
DS(ON) : 90 mΩ max.
• Fast Recovery Body Diode
Mechanical Features
• Compact size : F1 Package
• Press-fit contact technology
Applications
• Solar Inverter
Certification
• UL approved (E209204)
Package Code: F1
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Description Rating Units
Rectifier Diode
VRRM Peak Repetitive Reverse Voltage 620 V
IFav Diode Continuous Forward Current @ TC = 80°C 27 A
IFSM Diode Maximum Forward Surge Current 245 A
I2t I2t value 300 A2s
PDMaximum Power Dissipation @ TC = 25°C 77 W
TJ Operating Junction Temperature -40 to +150 °C
©2014 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FPF1C2P5MF07AM Rev. C1
FPF1C2P5MF07AM F1 Module solution for PV-Application
Absolute Maximum Ratings TC = 25°C unless otherwise noted. (Continued)
Symbol Description Rating Units
High-side IGBT
VCES Collector-Emitter Voltage 620 V
VGES Gate-Emitter Voltage ± 20 V
IC Collector Current @ TC = 80°C 39 A
ICM Pulsed Collector Current 90 A
IF Diode Continuous Forward Current @ TC = 80°C 22 A
IFM Diode Maximum Forward Current 90 A
PDMaximum Power Dissipation @ TC = 25°C 231 W
TJ Operating Junction Temperature -40 to +150 °C
Low-side MOSFET
VDSS Drain-Source Voltage 620 V
VGSS Gate-Source Voltage ± 20 V
IDContinuous Drain Current @ TC = 25°C 36 A
@ TC = 80°C 27 A
IDM Pulsed Drain Current Limited by TJ max. 156 A
IS Continuous Source-Drain Forward Current 36 A
ISM Maximum Pulsed Source-Drain Forward Current 156 A
PDMaximum Power Dissipation @ TC = 25°C 250 W
TJ Operating Junction Temperature -40 to +150 °C
Module
TSTG Storage Temperature -40 to +125 °C
VISO Isolation Voltage @ AC 1MIN 2500 V
Iso._Material Internal Isolation Material Al2O3
FMOUNT Mounting Force per Clamp 20 to 50 N
Weight Typ. 22 g
Creepage Terminal to Heatsink 11.5 mm
Terminal to Terminal 6.3 mm
Clearance Terminal to Heatsink 10.0 mm
Terminal to Terminal 5.0 mm
Package Marking and Ordering Information
Device Device Marking Package Packing Type Quantity / Tray
FPF1C2P5MF07AM FPF1C2P5MF07AM F1 Tray 22
©2014 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FPF1C2P5MF07AM Rev. C1
FPF1C2P5MF07AM F1 Module solution for PV-Application
Electrical Characteristics TC = 25°C unless otherwise noted.
* Note : High-side IGBT is optimized for line frequency switching such as 50/60 Hz.
Symbol Parameter Conditions Min. Typ. Max. Units
Rectifier Diode
VFDiode Forward Voltage IF = 30 A - - 1.9 V
IF = 30 A @TC = 125°C - 1.45 - V
IRReverse Leakage Current VR = 620 V - - 25 μA
RθJC Thermal Resistance of Junction to Case per Diode - - 1.62 °C/W
High-side IGBT
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 620 - - V
ICES Collector Cut-off Current VCE = VCES, VGE = 0 V - - 25 μA
IGES Gate-Emitter Leakage Current VGE = VGES, VCS = 0 V - - 2.5 μA
On Characteristics
VGE(th) Gate-Emitter Threshold Voltage VGE = VCE, IC = 30 mA 4 5.7 7 V
VCE(sat) Collector-Emitter Saturation Voltage IC = 30 A, VGE = 15 V - 1.1 1.6 V
IC = 30 A, VGE = 15 V @TC = 125°C - 1.0 - V
IC = 60 A, VGE = 15 V - 1.4 - V
Switching Characteristics
QgTotal Gate Charge VDS = 380 V, VGS = 0V...+15 V,
ID = 30 A - 214 - nC
RθJC Thermal Resistance of Junction to Case per IGBT - - 0.54 °C/W
High-Side FWD
VFM Diode Forward Voltage IF = 15 A, VGS = 0 V - 1.75 2.25 V
trr Reverse Recovery Time IF = 15 A
dIF/dt = 1650 A/μs
-30- ns
Irr Reverse Recovery Current - 27 - A
Qrr Reverse Recovery Charge - 405 - nC
trr Reverse Recovery Time IF = 15 A
dIF/dt = 1500 A/μs @TC = 125°C
-43 ns
Irr Reverse Recovery Current - 38 - A
Qrr Reverse Recovery Charge - 814 - nC
RθJC Thermal Resistance of Junction to Case per Diode - - 1.61 °C/W
©2014 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FPF1C2P5MF07AM Rev. C1
FPF1C2P5MF07AM F1 Module solution for PV-Application
Electrical Characteristics TC = 25°C unless otherwise noted. (Continued)
Symbol Parameter Conditions Min. Typ. Max. Units
Low-Side MOSFET
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA 620 - - V
IDSS Zero Gate Voltage Drain Current VDS = 620 V, VGS = 0 V - - 25 μA
IGSS Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 2.5 μA
On Characteristics
VGS(th) Gate-Source Threshold Voltage VGS = VDS, ID = 250 mA 2.7 3.8 5.3 V
RDS(ON) Static Drain-Source On-Resistance ID = 27 A, VGS = 10 V - - 90 mΩ
ID = 27 A, VGS = 10 V @TC = 125°C - 135 - mΩ
ID = 47 A, VGS = 10 V - 76 - mΩ
VSD Source-Drain Diode Forward Voltage ISD = 27 A, VGS = 0 V - - 1.5 V
ISD = 47 A, VGS = 0 V - 1.3 - V
Switching Characteristics
td(on) Turn-On Delay Time VCC = 380 V
ID = 27 A
VGS = 10 V
RG = 10 Ω
Inductive Load
TC = 25°C
-57- ns
trRise Time -14- ns
td(off) Turn-Off Delay Time - 240 - ns
tfFall Time -20- ns
EON Turn-On Switching Loss per Pulse - 440 - μJ
EOFF Turn-Off Switching Loss per Pulse - 113 - μJ
td(on) Turn-On Delay Time VCC = 380 V
ID = 27 A
VGS = 10 V
RG = 10 Ω
Inductive Load
TC = 125°C
-53- ns
trRise Time -16- ns
td(off) Turn-Off Delay Time - 257 - ns
tfFall Time -20- ns
EON Turn-On Switching Loss per Pulse - 719 - μJ
EOFF Turn-Off Switching Loss per Pulse - 124 - μJ
QgTotal Gate Charge VDS = 380 V, VGS = 0V...+10 V,
ID = 27 A - 155 - nC
RθJC Thermal Resistance of Junction to Case per Chip - - 0.5 °C/W
©2014 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FPF1C2P5MF07AM Rev. C1
FPF1C2P5MF07AM F1 Module solution for PV-Application
Typical Performance Characteristic
Fig 1. Typical Output Characteristics - IGBT Fig 2. Typical Output Characteristics - IGBT
0.0 0.5 1.0 1.5 2.0
0
30
60
90
TC = 25 oC
IC, Collector Current [A]
VCE, Collector-Emitter Voltage [V]
VGE = 20 V
15 V
12 V
10 V
8 V
0.0 0.5 1.0 1.5 2.0
0
30
60
90
TC = 125 oC
IC, Collector Current [A]
VCE, Collector-Emitter Voltage [V]
VGE = 20 V
15 V
12 V
10 V
8 V
Fig 3. Typical Saturation Voltage Characteristics
- IGBT
Fig 4. Transient Thermal Response Curve - IGBT
0.0 0.5 1.0 1.5 2.0
0
30
60
90
Common Emitter
VGE = 15 V
TC = 25°C
TC = 80°C
TC = 125°C
IC, Collector Current [A]
VCE, Collector-Emitter Voltage [V]
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
1
10
ZθJC(t), Thermal Response [°C/W]
t
1
, Rectangular Pulse Duration [sec]
* Notes :
1. ZθJC(t) = 0.54 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
PDM
t1
t2
0.5
0.3
0.1
0.05
0.02
0.01
0.005
Single Pulse
Fig 5. Typical Forward Voltage Drop vs.
Forward Current - High-Side FWD
0.00.51.01.52.02.53.03.5
0
15
30
45
60
75
90
TC = 25°C
TC = 80°C
TC = 125°C
IF, Forward Current [A]
VF, Forward Voltage [V]
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
1
10
0.01
Single Pulse
0.02
0.005
0.05
0.1
0.3
0.5
PDM
t1
t2
* Notes :
1. ZθJC(t) = 1.61 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
ZθJC(t), Thermal Response [°C/W]
t1, Rectangular Pulse Duration [sec]
Fig 6. Transient Thermal Response Curve
- High-Side FWD
©2014 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FPF1C2P5MF07AM Rev. C1
FPF1C2P5MF07AM F1 Module solution for PV-Application
Fig 7. On-Region Characteristics - MOSFET Fig 8. On-Resistance Variation
vs. Drain Current and Gate Voltage - MOSFET
Fig 9. On-Resistance Variation
vs. Temperature - MOSFET
Fig 10. Body Diode Forward Voltage Variation
vs. Source Current and Temperature - MOSFET
Fig 11. Turn-Off Loss vs. Gate Resistor Values
- MOSFET
Fig 12. Turn-On Loss vs. Gate Resistor Values
- MOSFET
0 5 10 15 20
20
40
60
80
100
120
140
160
* Note:
1. 250μs pulse test
VGS = 20V
15V
10V
8V
6V
ID, Drain Current[A]
V
DS
, Drain-Source Voltage[V]
0 5 10 15 20
0
20
40
60
80
100
120
140
160
* Note:
1. 250μs pulse test
VGS = 20 V
15 V
10 V
8 V
6 V
ID, Drain Current[A]
V
DS
, Drain-Source Voltage[V]
0 40 80 120 160
0.04
0.08
0.12
0.16
0.20
RDS(ON) [Ω],
Drain to Source On-Resistance
ID, Drain Current [A]
VGS = 10 V
VGS = 20 V
-50 -25 0 25 50 75 100 125 150 175
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
* Notes:
1. VGS = 10 V
2. ID = 27 A
RDS(ON) [Ω], [Normalized]
Drain to Source On-Resistance
T
C
, Case Temperature [°C]
0.30.60.91.21.51.82.1
0
30
60
90
120
150
TC = 25°C
TC = 80°C
TC = 125°C
IS, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
0 5 10 15 20 25 30 35
0.0
0.1
0.2
0.3
0.4
0.5
TC = 25°C
TC = 125°C
* Notes:
1. with an inductive load
2. VDS = 380 V, ID = 27 A
3. VGS = 10 V
Eoff, Turn-off Loss [mJ]
Rg, Gate Resistance [Ω]
0 5 10 15 20 25 30 35
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
* Notes:
1. with an inductive load
2. VDS = 380 V, ID = 27 A
3. VGS = 10 V
Eon, Turn-on Loss [mJ]
Rg, Gate Resistance [Ω]
TC = 125°C
TC = 25°C
Typical Performance Characteristic (Continued)
©2014 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FPF1C2P5MF07AM Rev. C1
FPF1C2P5MF07AM F1 Module solution for PV-Application
Typical Performance Characteristic (Continued)
Fig 13. Turn-Off Loss vs. Drain Current - MOSFET
Fig 14. Turn-On Loss vs. Drain Current - MOSFET
Fig 15. Transient Thermal Response Curve
- MOSFET
Fig 17. Transient Thermal Response Curve
- Rectifier Diode
0 5 10 15 20 25 30 35
0
40
80
120
160
200
* Notes:
1. with an inductive load
2. VDS = 380 V, ID = 27 A
3. VGS = 10 V
4. Rg = 10 Ω
Eoff, Turn-off Loss [uJ]
ID, Drain Current [A]
TC = 125°C
TC = 25°C
0 5 10 15 20 25 30 35
0.0
0.2
0.4
0.6
0.8
1.0
* Notes:
1. with an inductive load
2. VDS = 380 V, ID = 27 A
3. VGS = 10 V
4. Rg = 10 Ω
Eon, Turn-on Loss [mJ]
ID, Drain Current [A]
TC = 125°C
TC = 25°C
1E-5 1E-4 1E-3 0.01 0.1 1
1E-4
1E-3
0.01
0.1
1
ZθJC(t), Thermal Response [°C/W]
t1, Rectangular Pulse Duration [sec]
PDM
t1
t2
* Notes :
1. ZθJC(t) = 0.5 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
0.5
0.3
0.1
0.05
0.02
0.01
0.005
Single Pulse
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
1
10
ZθJC(t), Thermal Response [°C/W]
t1, Rectangular Pulse Duration [sec]
PDM
t1
t2
* Notes :
1. ZθJC(t) = 1.62 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
0.5
0.3
0.1
0.05
0.02
0.01
0.005
Single Pulse
Fig 16. Typical Forward Voltage Drop vs.
Forward Current - Rectifier Diode
0.0 0.5 1.0 1.5 2.0 2.5
0
15
30
45
60
75
90
TC = 25°C
TC = 80°C
TC = 125°C
IF, Forward Current [A]
VF, Forward Voltage [V]
©2014 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FPF1C2P5MF07AM Rev. C1
FPF1C2P5MF07AM F1 Module solution for PV-Application
Internal Circuit Diagram
Package Outlines [mm]
DC+ DC+
G2
E2
GM2
SM2
RTN2
OUT1
GM1
SM1
RTN2
RTN2
RTN2
RTN1
RTN1
IN2
IN2
IN1
IN1
G1
E1
OUT1
OUT2
OUT2
D1 D2
D3D4
©2014 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FPF1C2P5MF07AM Rev. C1
FPF1C2P5MF07AM F1 Module solution for PV-Application
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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