35PD300-ST, -SMA, -SC
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 35PD300-ST, an InGaAs photodiode with a 300µm-diameter photosensitive region packaged in a TO-46
header and actively aligned in a AT&T ‘ST’ active device mount. This device is one of Telcom Devices' most
versatile optoelectronic components designed for applications in high sensitivity instrumentation, and
moderate-bit-rate fiberoptic communications. Planar semiconductor design and dielectric passivation
provide superior performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200°C,
15 hours, Vr = 20V). Devices with enhanced responsivity at 850nm are available.
All Purpose InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Frequency Response
Volts
nA
pF
A/W
ns
MHz
–15
10
12
3
1
4
0.9
300
0.7
–5V
–5V
1300nm
(–3dB)
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
20 Volts
25mA
5mA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS
