Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 20V
▼ Capable of 2.5V gate drive RDS(ON) 25mΩ
▼ Single Drive Requirement ID25A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.2
Pulsed Drain Current190
Total Power Dissipation 25
Continuous Drain Current, VGS @ 4.5V 25
Continuous Drain Current, VGS @ 4.5V 16
Drain-Source Voltage 20
Gate-Source Voltage +16
200808154
1
AP9T16GH/J
RoHS-compliant Product
Parameter Rating
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
GDSTO-252(H)
GDSTO-251(J)
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.01 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=6A - - 25 mΩ
VGS=2.5V, ID=5.2A - - 40 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.5 V
gfs Forward Transconductance VDS=5V, ID=18A - 19 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=16V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+16V - - +100 nA
QgTotal Gate Charge2ID=18A - 10 16 nC
Qgs Gate-Source Charge VDS=16V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5 - nC
td(on) Turn-on Delay Time2VDS=10V - 10 - ns
trRise Time ID=18A - 98 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 18 - ns
tfFall Time RD=0.56Ω-6-
ns
Ciss Input Capacitance VGS=0V - 870 1390 pF
Coss Output Capacitance VDS=20V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF
RgGate Resistance f=1.0MHz - 1.38 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=18A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=18A, VGS=0V, - 19 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9T16GH/J
AP9T16GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Normalized RDS(ON)
ID=6A
VG=4.5V
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized VGS(th) (V)
0
20
40
60
80
100
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
5.0V
4.5V
3.5V
2.5V
VG=1.5V
TC=25oC
0
20
40
60
80
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 5.0V
4.5V
3.5V
2.5V
VG=1.5V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150 oC
12
17
22
27
32
37
42
0246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=5.2A
TC=25oC
AP9T16GH/J
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=18A
VDS =10V
VDS =12V
VDS =16V
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
100
1000
10000
1 5 9 13172125
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
Package Outline : TO-252
Millimeters
MIN NOM MAX
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
F1 0.5 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
e
e
D
D1
E2
E1
F
B1 F1
A2
A3 C
R : 0.127~0.381
(
0.1mm
Part Number
Package Code
9T16GH
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
LOGO
meet Rohs requirement
5
Package Outline : TO-251
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.50 0.69 0.88
B2 0.60 0.87 1.14
c0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 5.20 5.35 5.50
E 6.70 7.00 7.30
E1 5.40 5.80 6.20
e---- 2.30 ----
F 5.88 6.84 7.80
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
Millimeters
9T16GJ
YWWSSS
Part Numbe
r
Package Code
A
c1
A1
c
e
D
E1 E
B1
B2
F
D1
e
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW ：Week
SSS ：Sequence
LOGO
meet Rohs requirement
for low voltage MOSFET only
6
