T4-LDS-0313, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 1 of 4
2N4957
Available on
commercial
versions
PNP Silicon
VHF-UHF Amplifier Transistors
Qualified per MIL-PRF-19500/426
Quali f i ed Lev els:
JAN, JAN TX,
and JANTXV
DESCRIPTION
The 2N4957 is a m ilitary q ualified silicon P NP amplifier t r ansistor d esigned for VHF-UHF
equipment and other high-reliabilit y applic at ion s. Common applications include high gain low
noise amplifi er ; oscillator, and mixer applicat ions. It is also available in a lo w-profile UB
surface mount package.
TO-72 Package
Also available in:
UB Pa ckag e
(s urf ace mount)
2N4957UB
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N4957
• JAN, JANTX , and JANTXV military quali fied versions are available per MIL-PRF-19500/426
(See part nomenclature for all available options )
• RoHS com pliant version available (commercial grade only)
APPLICATIONS / BENE FITS
• Low-pow er, ultra-high frequency transistor
• Leaded metal TO -72 pac kage
MAXIMUM RATINGS @
TA
= +25 oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: + 353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Collector-Emitter Voltage
VCEO
-30
V
Collector-Base Voltage
VCBO
-30
V
Emitter-Base Voltage
VEBO
-3
V
Total Power Dissipation (1)
PT
200
mW
Collector Current
IC
-30
mA
Notes: 1. Derate linearly 1.14 mW/°C for TA > +25 °C
T4-LDS-0313, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 2 of 4
2N4957
• CASE: Ni plated kovar, Ni cap
• TERMINALS: Gold over nickel plated kovar leads, solder dipped. RoHS compliant versions are available without solder dip on
commercial grade only .
• MARKING: Manufacturer’s ID, date code, part number
• POLARITY: PNP, see case outline on last page
• WEIGHT: Approximately 0.322 grams
• See Package Dimensions on last page.
JAN 2N4957 (e3)
Reliability Level
JAN=JAN level
JANTX=JAN lev el
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOL S & DEFI NITIONS
Symbol
Definition
IB
Base cur rent: The value of the dc current into the base terminal.
IC
Collector current: The value of the dc current into the collector terminal.
IE
Emitter current: The value of the dc current into the em itter terminal.
TA
Ambient temperature: The air temperature measured below a device, in an environment of substantially uniform
temperature, cooled only by natural air convection and not materially affected by reflective and radiant surfaces .
T
C
Case temperature: The temperature measured at a specified location on the case of a device.
VCB
Collector-base voltage: The dc vol tage between the collector and the base.
VCBO
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
VCEO
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminal s when the base
terminal is open-circuited.
VEB
Emitter-base voltage: The dc voltage between the emitter and the base.
VEBO
Emitter-base voltage, collector open: The voltage between the emi tter and base terminals with the collector terminal
open-circuited.
T4-LDS-0313, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 3 of 4
2N4957
TC
OFF CHARACTERISTI CS
Test Conditions Symbol
Value
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = -1.0 mA, IB = 0, Bias condit ion D V(BR)CEO
-30
-
V
Collector to Base Cutoff Current
VCB = -20 V, IE = 0, Bias condition D
VCB = -30 V, Bias condition D
ICBO
-
-100
-100
nA
µA
Emitter to Base Cutoff Current
VEB = -3 V, Bias condition D IEBO
-
-100
µA
ON CHARACTERISTICS
Test Conditions Symbol Value
Min.
Max.
Unit
Forward Current transfer ratio
IC = -0.5 mA, VCE = -10 V
IC = -2.0 mA, VCE = -10 V
IC = -5.0 mA, VCE = -10 V
IC = -5.0 mA, VCE = -10 V, TA = -55 ºC
hFE
15
20
30
10
165
DYNAMIC CHARACTERISTICS
Test Conditions
Symbol Value
Unit
Min.
Max.
Magnitude of common emitter small signal short circuit forward
current transfer ratio
VCE = -10 V, IE = -2.0 mA, f = 100 MHz
|hfe| 12 36
Collector-base time constant
IE = -2.0 mA, VCB = -10.0 V, f = 63.6 MHz rb’Cc 1.0 8.0 ps
Collec tor to Base – feedback capacitance
IE = 0 mA, VCB = -10 V, 100 kHz < f < 1 MHz Ccb 0.8 pF
Noise Figure (50 Ohms)
IC = -2.0 mA, VCE = -10 V, f = 450 MHz, RL = 50 Ω NF
3.5 dB
Small S ignal Power Gain (common emitter)
IC = -2.0 mA, VCE = -10 V, f = 450 MHz Gpe 17 25 dB
T4-LDS-0313, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 4 of 4
2N4957
NOTES:
1. Dimensions ar e in inches.
2. Millimeters are given for information only.
3. Beyond r (radius ) maximum, TH shall be held for a m inimum length of 0.011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 m m) below seating plane shall be within 0.007 inch
(0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in
L1 and beyond LL minimum.
8. All four leads.
9. Dimension r (radius) applies to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
Dimensions
Notes
Ltr
Inch
Millimeters
Min
Max
Min
Max
TL
0.028
0.048
0.071
1.22
TH
0.036
0.046
0.091
1.17
HD
0.209
0.230
5.31
5.84
5
CD
0.178
0.195
4.52
4.95
5
LD
0.016
0.021
0.410
0.53
7, 8
LC
0.100 TP
2.54 TP
7, 8
CH
0.170
0.210
4.32
5.33
LL
0.500
0.750
12.70
19.05
7, 8
P
0.100
2.54
Q
-
0.040
-
1.02
5
1
Emitter
2
Base
3
Collector
4
Case