
T4-LDS-0313, Rev. 1 (10/8/13) ©2013 Microsemi Corporation Page 3 of 4
ELECTRI CAL CHARACTERISTICS @
TC
OFF CHARACTERISTI CS
Test Conditions Symbol
Collector-Emitter Breakdown Voltage
IC = -1.0 mA, IB = 0, Bias condit ion D V(BR)CEO
-30
-
V
Collector to Base Cutoff Current
VCB = -20 V, IE = 0, Bias condition D
VCB = -30 V, Bias condition D
ICBO
-
-100
nA
µA
Emitter to Base Cutoff Current
VEB = -3 V, Bias condition D IEBO
-
-100
µA
ON CHARACTERISTICS
Test Conditions Symbol Value
Forward Current transfer ratio
IC = -0.5 mA, VCE = -10 V
IC = -2.0 mA, VCE = -10 V
IC = -5.0 mA, VCE = -10 V
IC = -5.0 mA, VCE = -10 V, TA = -55 ºC
hFE
15
20
30
10
165
DYNAMIC CHARACTERISTICS
Test Conditions
Symbol Value
Unit
Magnitude of common emitter small signal short circuit forward
current transfer ratio
VCE = -10 V, IE = -2.0 mA, f = 100 MHz
|hfe| 12 36
Collector-base time constant
IE = -2.0 mA, VCB = -10.0 V, f = 63.6 MHz rb’Cc 1.0 8.0 ps
Collec tor to Base – feedback capacitance
IE = 0 mA, VCB = -10 V, 100 kHz < f < 1 MHz Ccb 0.8 pF
Noise Figure (50 Ohms)
IC = -2.0 mA, VCE = -10 V, f = 450 MHz, RL = 50 Ω NF
3.5 dB
Small S ignal Power Gain (common emitter)
IC = -2.0 mA, VCE = -10 V, f = 450 MHz Gpe 17 25 dB