QID0630006
Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series
www.pwrx.com Hermetic Module
300 Amperes/600 Volts
Page 1 Revision Date: 09/19/2006
Description:
Powerex IGBT Hermetic modules are
designed for use in switching
applications. Each Module consists of
two IGBT transistors in a half bridge
configuration with each transistor
having a reverse connected super fast
recovery free wheel diode. All
components are located in a
hermetically sealed chamber and are
electrically isolated from the heat
sinking base plate, offering simplified
system assembly and thermal
management.
Features:
♦ Low Drive Power
♦ Low VCE(sat)
♦ Discrete Fast Recovery Free-
Wheel Diode
♦ High Frequency Operation (20-
25kHz)
♦ Isolated Base plate for Easy Heat
sinking
♦ Fully Hermetic Package
♦ Package Design Capable of Use at
High Altitudes
Schematic:
Applications:
♦ AC Motor Control
♦ Motion/Servo Control
♦ Air Craft Applications
Ordering Information:
Contact Powerex Custom Modules
QID0630006
Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series
www.pwrx.com Hermetic Module
300 Amperes/600 Volts
Page 2 Revision Date: 09/19/2006
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings Symbol Units
Collector Emitter Voltage VCES 600 Volts
Gate Emitter Voltage VGES ±20 Volts
Collector Current IC 300 Amperes
Peak Collector Current ICM 600* Amperes
Diode Forward Current IFM 300 Amperes
Diode Forward Surge Current IFM 600* Amperes
Power Dissipation Pd 1100 Watts
V Isolation VRMS 2500 Volts
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic Symbol Test
Conditions Min Typ Max Units
Collector Cutoff Curren t ICES V
CE=VCES 1.0 mA
Gate Leakage Current IGES V
CE=0V 0.5
µA
Gate-Emitter Threshold Voltage VGE(th) I
C=30mA,
VCE=10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) I
C=300A,
VGE=15V 2.1 2.8 Volts
V
CE(sat) I
C=300A,
VGE=15V,
Tj=150°C
2.15 Volts
Total Gate Charge QG V
CC=300V,
IC=300A,
VGS=15V
900 nC
Diode Forward Voltage VFM I
E=300A,
VGS=0V 2.8 Volts
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic Symbol Test
Conditions Min Typ Max Units
Input Capacitance Cies V
GE=0V 30 nF
Output Capacitance Coes V
CE=10V 10.5 nF
Reverse Transfer Capacitance Cres f=1MHz 6 nF
Turn on Delay time td(on) V
CC=300V 350 nS
Rise Time tr I
C=300A 600 nS
Turn off delay time td(off) V
GE1=VGE2=15
V 350 nS
Fall Time tf RG=2.1Ω 300 nS
Diode Reverse Recovery Time trr IE=300A 150 nS
Diode reverse Recovery Charge Qrr diE/dt=-
600A/µS 0.81 µC
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic Symbol Test
Conditions Min Typ Max Units
Thermal Resistance, Junction to Case RθJC Per IGBT 0.11 °C/W
Thermal Resistance, Junction to Case RθJC Per Diode 0.24 °C/W
QID0630006
Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series
www.pwrx.com Hermetic Module
300 Amperes/600 Volts
Page 3 Revision Date: 09/19/2006
QID0630006
Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 (724) 925-7272 Dual IGBT H-Series
Hermetic Module
300 Amperes/600 Volts
Page 4 Revision Date: 09/19/2006
