ALT33779A - 2-Power - Datasheet.Live

SSM3K09FU

2014-03-01

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K09FU

High Speed Switching Applications

• Small package

• Low on resistance

: Ron = 0.7 Ω (max) (@VGS = 10 V)

: Ron = 1.2 Ω (max) (@VGS = 4 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-Source voltage VDS 30 V

Gate-Source voltage VGSS ±20 V

DC ID 400

Drain current

Pulse IDP 800

Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW

Channel temperature Tch 150 °C

Storage temperature Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3) Figure 1.

Marking Equivalent Circuit

(top view)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC ―

JEITA SC-70

TOSHIBA 2-2E1E

Weight: 0.006 g (typ.)

D J

1 2

0.6 mm

1.0 mm

Figure 1: 25.4 mm × 25.4 mm × 1.6 t,

Cu Pad: 0.6 mm2 × 3

Start of commercial production

2000-01

SSM3K09FU

2014-03-01

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA

Drain-Source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 30 ⎯ ⎯ V

Drain cut-off current IDSS V

DS = 30 V, VGS = 0 ⎯ ⎯ 1 μA

Gate threshold voltage Vth V

DS = 5 V, ID = 0.1 mA 1.1 ⎯ 1.8 V

Forward transfer admittance ⏐Yfs⏐ V

DS = 5 V, ID = 200 mA (Note2) 270 ⎯ ⎯ mS

ID = 200 mA, VGS = 10 V (Note2) ⎯ 0.5 0.7

ID = 200 mA, VGS = 4 V (Note2) ⎯ 0.8 1.2

Drain-Source ON resistance RDS (ON)

ID = 200 mA, VGS = 3.3 V (Note2) ⎯ 1.0 1.7

Input capacitance Ciss V

DS = 5 V, VGS = 0, f = 1 MHz ⎯ 20 ⎯ pF

Reverse transfer capacitance Crss V

DS = 5 V, VGS = 0, f = 1 MHz ⎯ 7 ⎯ pF

Output capacitance Coss V

DS = 5 V, VGS = 0, f = 1 MHz ⎯ 16 ⎯ pF

Turn-on time ton ⎯ 72 ⎯ ns

Switching time

Turn-off time toff

VDD = 5 V, ID = 200 mA,

VGS = 0 to 4 V ⎯ 68 ⎯ ns

Note2: Pulse test

Switching Time Test Circuit

(a) Test circuit (b) VIN

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this

product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower

voltage than Vth.

(relationship can be established as follows: VGS (off) < Vth < VGS (on) )

Please take this into consideration for using the device.

ton

90%

10%

0 V

4 V

10%

90%

toff

tr tf

VDD

VDS

(

)

VDD = 5 V

D.U.≤ 1%

Input: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

Ta = 25°C

VDD

Output

Input

4 V

10 μs

50 Ω

SSM3K09FU

2014-03-01

Drain-Source on resistance

RDS (ON) (Ω)

Drain-Source on resistance

RDS (ON) (Ω)

Drain-Source voltage VDS (V)

ID – VDS

Drain current ID (mA)

RDS (ON) – ID

Drain-Source on resistance

RDS (ON) (Ω)

Gate-Source voltage VGS (V)

ID – VGS

Drain current ID (mA)

Gate-Source voltage VGS (V)

RDS (ON) – VGS

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain current ID (mA)

⏐Yfs⏐ – ID

Forward transfer admittance

⏐Yfs⏐ (mS)

800

400

0 0.5 1 1.5 2

200

Common Source

Ta = 25°C

10 4

VGS = 2.4 V

3.3

3.0

2.8

2.6

600

1000 2

1.8

1.2

0.8

0.4

0 200 400 600 800 1000

1.6

1.4

0.6

0.2

Common Source

Ta = 25°C

VGS = 3.3 V

4 V

10 V

1.8

1.2

0.8

0.4

−25 0 25 75 100 150

1.6

1.4

0.6

0.2

Common Source

ID = 200 mA

50 125

VGS = 3.3 V

4 V

10 V

0.01

0 4 2 1

100

1000

0.1

Common Source

VDS = 5 V

25°C

−25°C

Ta = 100°C

1.8

1.2

0.8

0.4

0 2 4 6 8 10

1.6

1.4

0.6

0.2

Common Source

ID = 200 mA

Ta = 100°C

25°C

−25°C

100

30 100

1000

Common Source

VDS = 5 V

Ta = 25°C

50 300 500

300

500

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Ambient temperature Ta (°C)

Vth – Ta

Gate threshold voltage Vth (V)

Drain-Source voltage VDS (V)

IDR – VDS

Drain Reveres current IDR (mA)

Drain-Source voltage VDS (V)

C – VDS

Capacitance C (pF)

Drain current ID (mA)

t – ID

Switching time t (ns)

Ambient temperature Ta (°C)

PD – Ta

Power dissipation PD (mW)

800

400

0 −0.4 −1 −1.4

200

600

1000

Common Source

VGS = 0

Ta = 25°C

−0.2 −0.6 −0.8 −1.2

G IDR

Mounted on FR4 board

(25.4 mm × 25.4 mm ×1.6 t

Cu pad: 0.6 mm2 × 3) Figure 1

100

0 160 100 60 20 80 40 120

150

200

140

0.1 1

100

10 100

500

Common Source

VGS = 0 V

f = 1 MHz

Ta = 25°C

Coss

Crss

Ciss

100

1 10

1000

100 1000

5000

Common Source

VDD = 5 V

VGS = 0~4 V

Ta = 25°C

toff

ton

1.8

1.2

0.8

0.4

−25 0 25 75 100 150

1.6

1.4

0.6

0.2

50 125

Common Source

ID = 0.1 mA

VDS = 5 V

SSM3K09FU

2014-03-01

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