SSM3K09FU
2014-03-01
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K09FU
High Speed Switching Applications
Small package
Low on resistance
: Ron = 0.7 (max) (@VGS = 10 V)
: Ron = 1.2 (max) (@VGS = 4 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage VDS 30 V
Gate-Source voltage VGSS ±20 V
DC ID 400
Drain current
Pulse IDP 800
mA
Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3) Figure 1.
Marking Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA SC-70
TOSHIBA 2-2E1E
Weight: 0.006 g (typ.)
D J
1 2
3
1 2
3
0.6 mm
1.0 mm
Figure 1: 25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.6 mm2 × 3
Start of commercial production
2000-01
SSM3K09FU
2014-03-01
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 ±1 μA
Drain-Source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 30 V
Drain cut-off current IDSS V
DS = 30 V, VGS = 0 1 μA
Gate threshold voltage Vth V
DS = 5 V, ID = 0.1 mA 1.1 1.8 V
Forward transfer admittance Yfs V
DS = 5 V, ID = 200 mA (Note2) 270 mS
ID = 200 mA, VGS = 10 V (Note2) 0.5 0.7
ID = 200 mA, VGS = 4 V (Note2) 0.8 1.2
Drain-Source ON resistance RDS (ON)
ID = 200 mA, VGS = 3.3 V (Note2) 1.0 1.7
Ω
Input capacitance Ciss V
DS = 5 V, VGS = 0, f = 1 MHz 20 pF
Reverse transfer capacitance Crss V
DS = 5 V, VGS = 0, f = 1 MHz 7 pF
Output capacitance Coss V
DS = 5 V, VGS = 0, f = 1 MHz 16 pF
Turn-on time ton 72 ns
Switching time
Turn-off time toff
VDD = 5 V, ID = 200 mA,
VGS = 0 to 4 V 68 ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test circuit (b) VIN
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
(c) VOUT
ton
90%
10%
0 V
4 V
10%
90%
toff
tr tf
VDD
VDS
(
ON
)
VDD = 5 V
D.U. 1%
Input: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDD
Output
Input
4 V
0
10 μs
50 Ω
RL
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Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source voltage VDS (V)
ID – VDS
Drain current ID (mA)
Drain current ID (mA)
RDS (ON) – ID
Drain-Source on resistance
RDS (ON) (Ω)
Gate-Source voltage VGS (V)
ID – VGS
Drain current ID (mA)
Gate-Source voltage VGS (V)
RDS (ON) – VGS
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain current ID (mA)
Yfs – ID
Forward transfer admittance
Yfs (mS)
800
400
0
0 0.5 1 1.5 2
200
Common Source
Ta = 25°C
10 4
VGS = 2.4 V
3.3
3.0
2.8
2.6
600
1000 2
1.8
1.2
0.8
0.4
0
0 200 400 600 800 1000
1.6
1.4
1
0.6
0.2
Common Source
Ta = 25°C
VGS = 3.3 V
4 V
10 V
2
1.8
1.2
0.8
0.4
0
25 0 25 75 100 150
1.6
1.4
1
0.6
0.2
Common Source
ID = 200 mA
50 125
VGS = 3.3 V
4 V
10 V
0.01
1
10
0 4 2 1
100
1000
3
0.1
Common Source
VDS = 5 V
25°C
25°C
Ta = 100°C
2
1.8
1.2
0.8
0.4
0
0 2 4 6 8 10
1.6
1.4
1
0.6
0.2
Common Source
ID = 200 mA
Ta = 100°C
25°C
25°C
10
100
30 100
1000
1000
Common Source
VDS = 5 V
Ta = 25°C
50 300 500
30
50
300
500
10
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Ambient temperature Ta (°C)
Vth – Ta
Gate threshold voltage Vth (V)
Drain-Source voltage VDS (V)
IDR – VDS
Drain Reveres current IDR (mA)
Drain-Source voltage VDS (V)
C – VDS
Capacitance C (pF)
Drain current ID (mA)
t – ID
Switching time t (ns)
Ambient temperature Ta (°C)
PD – Ta
Power dissipation PD (mW)
800
400
0
0 0.4 1 1.4
200
600
1000
Common Source
VGS = 0
Ta = 25°C
0.2 0.6 0.8 1.2
S
G IDR
D
Mounted on FR4 board
(25.4 mm × 25.4 mm ×1.6 t
Cu pad: 0.6 mm2 × 3) Figure 1
0
50
100
0 160 100 60 20 80 40 120
150
200
140
1
10
0.1 1
100
10 100
500
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Coss
Crss
Ciss
10
100
1 10
1000
100 1000
5000
Common Source
VDD = 5 V
VGS = 0~4 V
Ta = 25°C
toff
tf
ton
t
r
2
1.8
1.2
0.8
0.4
0
25 0 25 75 100 150
1.6
1.4
1
0.6
0.2
50 125
Common Source
ID = 0.1 mA
VDS = 5 V
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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