VDRM IT(AV)M IT(RMS) ITSM VT0 rT = 8000 V = 2150 A = 3380 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20Q8500 Doc. No. 5SYA1073-02 Jan.13 * Patented free-floating silicon technology * Low on-state and switching losses * Optimum power handling capability * Interdigitated amplifying gate Blocking Maximum rated values 1) Parameter Symbol Conditions tp = 10 ms, f = 5 Hz Max. surge peak forward and VDSM, Tvj = 5...115C, Note 1 reverse blocking voltage VRSM Max repetitive peak forward VDRM, and reverse blocking voltage VRRM Max crest working forward and reverse voltages VDWM, VRWM Critical rate of rise of commutating voltage dv/dtcrit 5STP 20Q8500 8500 Unit V 8000 V 5340 V 2000 V/s f = 50 Hz, tp = 10 ms, tp1 = 250 ms, Tvj = 5...115C, Note 1, Note 2 Exp. to 5340 V, Tvj = 115C Characteristic values Parameter Forward leakage current Symbol Conditions IDRM VDRM, Tvj = 115C Reverse leakage current IRRM min typ VRRM, Tvj = 115C max 1000 Unit mA 1000 mA max 108 Unit kN Note 1: Voltage de-rating factor of 0.11% per C is applicable for Tvj below +5 C Note 2: Recommended minimum ratio of VDRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 2051. Mechanical data Maximum rated values 1) Parameter Mounting force Symbol Conditions FM min 81 typ 90 Acceleration a Device unclamped 50 m/s2 Acceleration a Device clamped 100 m/s2 Characteristic values Parameter Weight Symbol Conditions m Housing thickness H Surface creepage distance DS 36 mm Air strike distance Da 15 mm FM = 90 kN, Ta = 25 C min typ 25.5 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max 2.1 26.5 Unit kg mm 5STP 20Q8500 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70 C max Unit 2150 A 3380 A 3 52x10 tp = 10 ms, Tvj = 115 C, sine half wave, VD = VR= 0 V, after surge A 13.52x106 A2s tp = 10 ms, Tvj = 115 C, sine half wave, VR= 0.6*VRRM, after surge 33x103 A 5.45x106 A2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 1500 A, Tvj = 115 C Threshold voltage V(T0) IT = 700 A - 2100 A, Tvj= 115 C Slope resistance rT Holding current IH Latching current IL min typ max Unit 2 V 1.25 V 0.48 mW Tvj = 25 C 150 mA Tvj = 115 C 125 mA Tvj = 25 C 600 mA Tvj = 115 C 500 mA max 250 Unit A/s 1000 A/s 1080 s Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit Tvj = 115 C, ITRM = 2000 A, di/dtcrit VD 0.67 VDRM, IFG = 2 A, tr = 0.5 s Circuit-commutated turn-off tq time min typ Cont. f = 50 Hz Cont. f = 1 Hz Tvj = 115C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s, VD 0.67xVDRM, dvD/dt = V/s Characteristic values Parameter Reverse recovery charge Reverse recovery current Gate turn-on delay time Symbol Conditions Qrr Tvj = 115C, ITRM = 2000 A, V R = 200 V, IRM diT/dt = -1.5 A/s tgd min 4000 typ 50 Tvj = 25 C, VD = 0.4xVRM, IFG = 2 A, tr = 0.5 s max 8000 Unit As 125 A 3 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1073-02 Jan.13 page 2 of 7 5STP 20Q8500 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Symbol Conditions VFGM Peak forward gate current min typ max 12 Unit V IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 7 W Characteristic values Parameter Gate-trigger voltage Symbol Conditions VGT Tvj = 25 C min typ max 2.6 Unit V Gate-trigger current IGT Tvj = 25 C Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 115 C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 115C 10 mA 400 mA Thermal Maximum rated values 1) Parameter Operating junction temperature range Symbol Conditions Tvj min Storage temperature range Tstg typ -40 max 115 Unit C 140 C max 5 Unit K/kW Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) Double-side cooled to case Fm = 81...108 kN min typ Rth(j-c)A Anode-side cooled Fm = 81...108 kN 10 K/kW Rth(j-c)C Cathode-side cooled Fm = 81...108 kN 10 K/kW Double-side cooled Fm = 81...108 kN 1 K/kW Single-side cooled Fm = 81...108 kN 2 K/kW Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: n Z th(j- c) (t) = a R i (1 - e- t/t i ) i =1 i 1 2 3 4 Ri(K/kW) 3.560 0.680 0.460 0.280 ti(s) 0.4069 0.0559 0.0075 0.0018 Fig. 1 Transient thermal impedance (junction-tocase) vs. Time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1073-02 Jan.13 page 3 of 7 5STP 20Q8500 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj x IT + CTvj x ln(IT +1) + DTvj x IT VT115 = ATvj + BTvj x IT + CTvj x ln(IT +1) + DTvj x IT A25 215.1x10-3 Valid for IT = 1000 - 40000 A B25 C25 217.2x10-6 175.6x10-3 D25 5.475x10-3 A115 502.8x10-3 Valid for IT = 1000 - 40000 A B115 C115 D115 -6 -3 302.5x10 65.79x10 13.85x10-3 Fig. 2 On-state characteristics Fig. 3 On-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1073-02 Jan.13 page 4 of 7 5STP 20Q8500 IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/ms 1 ms 5...20 ms diG/dt IGon 10 % t tr tp (IGM) tp (IGon) Fig. 6 Recommended gate current waveform Fig. 8 Reverse recovery charge vs. decay rate of on-state current Fig. 7 Max. peak gate power loss Fig. 9 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1073-02 Jan.13 page 5 of 7 5STP 20Q8500 Turn-on and Turn-off losses Fig. 10 Turn-on energy, half sinusoidal waves Fig. 11 Turn-on energy, rectangular waves Fig. 12 Turn-off energy, half sinusoidal waves Fig. 13 Turn-off energy, rectangular waves Total power loss for repetitive waveforms: IT(t) IT(t), V(t) PTOT = PT + Won x f + Woff x f -diT/dt where t Qrr V(t) -IRRM -V0 T 1 PT = o IT x VT (IT ) dt T 0 -dv/dtcom -VRRM Fig. 14 Current and voltage waveforms at turn-off Fig. 15 Relationships for power loss ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1073-02 Jan.13 page 6 of 7 5STP 20Q8500 g g Fig. 16 Device Outline Drawing Related documents: 5SYA 2020 5SYA 2049 5SYA 2051 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105 Design of RC-Snubber for Phase Control Applications Voltage definitions for phase control thyristors and diodes Voltage ratings of high power semiconductors Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1073-02 Jan.13