5STP 20Q8500
ABB Switzerland Ltd, Semiconductors
reserves the right to change specifications without notice.
Doc. No. 5SYA1073-02 Ja n.13 page 2 of 7
On-state
Maximum rated values 1)
Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 2150 A
RMS on-state current IT(RMS) 3380 A
Peak non-repetitiv e surge
current ITSM tp = 10 ms, Tvj = 115 °C, sine half
wave,
VD = VR= 0 V, after surge
52×103A
Limiting load in tegral I2t 13.52×106A2s
Peak non-repetitiv e surge
current ITSM tp = 10 ms, Tvj = 115 °C, sine half
VR= 0.6*V RRM, after surge
33×103A
Limiting load in tegral I2t 5.45×106A2s
Characteristic values
On-state voltage VTIT = 1500 A, Tvj = 115 °C 2 V
Threshold voltage V(T0) IT = 700 A - 2100 A, Tvj= 115 °C 1.25 V
Sl ope resistance r T0.48 mW
Holding cur rent IHTvj = 25 °C 150 mA
Tvj = 115 °C 125 mA
Latching cur rent ILTvj = 25 °C 600 mA
Tvj = 115 °C 500 mA
Switching
Maximum rated values 1)
Critical rate of rise of on-
state cur rent di/dtcrit Tvj = 115 °C,
ITRM = 2000 A,
VD£ 0.67 VDRM,
IFG = 2 A, tr = 0.5 µs
Cont.
f = 50 Hz 250 A/µs
Critical rate of rise of on-
state cur rent di/dtcrit Cont.
f = 1 Hz 1000 A/µs
Circu it-commutated turn-off
time tqTvj = 115°C, ITRM = 2000 A,
VR= 200 V, diT/dt = - 1.5 A /µs,
VD£ 0.67×VDRM, dvD/dt = V/µ s
1080 µs
Characteristic values
Reverse recovery charge Qrr Tvj = 115°C, ITRM = 2000 A,
VR= 200 V,
diT/dt = -1.5 A/µs
4000 8000 µAs
Reverse recovery current IRM 50 125 A
Gate turn-on delay time tgd Tvj = 25 °C, VD = 0.4×VRM, IFG = 2 A,
tr = 0.5 µs 3µs